A143E
Abstract: DTA143ESA DTA143EUA resistors DTA143ECA DTA143EE DTA143EKA transistor 355
Text: Transistors Digital transistors built-in resistors DTA143EE / DTA143EUA / DTA143EKA / DTA143ECA / DTA143ESA FFeatures 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit).
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DTA143EE
DTA143EUA
DTA143EKA
DTA143ECA
DTA143ESA
96-268-A143E)
DTA143EE/DTA143Euit)
E/DTA143EUA/DTA143EKA/DTA143ECA/DTA143ESA
A143E
DTA143ESA
resistors
transistor 355
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TEA15xx-series
Abstract: laptop inverter ccfl low noise transistors bc638 power transistor transistors equivalents TV power transistor datasheet AN10117-01 PNP SOT89 laptop motherboard resistors Royer oscillator Schottky Diode SC-62
Text: Application Note Medium Power Transistors and Rectifiers for Power Management Applications AN10117-01 Philips Semiconductors 1.2/W97 TRAD Medium Power Transistors and Rectifiers for Power Management Applications AN10117-01 Application Note Philips Semiconductors
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AN10117-01
2/W97
AN10116:
AN10230:
PMEG1020EA
PMEG2010EA
D-22529
TEA15xx-series
laptop inverter ccfl
low noise transistors bc638
power transistor transistors equivalents
TV power transistor datasheet
AN10117-01
PNP SOT89
laptop motherboard resistors
Royer oscillator
Schottky Diode SC-62
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2N3735
Abstract: 2N3735L 2N3737 2N3737UB
Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/395 DEVICES LEVELS 2N3735 2N3737 2N3735L 2N3737UB JAN
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MIL-PRF-19500/395
2N3735
2N3737
2N3735L
2N3737UB
2N3735,
T4-LDS-0173
2N3735
2N3735L
2N3737
2N3737UB
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JANTX 2N3735
Abstract: 2n3735
Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/395 DEVICES LEVELS 2N3735 2N3737 2N3735L 2N3737UB JAN
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MIL-PRF-19500/395
2N3735
2N3737
2N3735L
2N3737UB
2N3735,
T4-LDS-0173
JANTX 2N3735
2n3735
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c125t
Abstract: a144* transistor A143E resistors DTA113Zs a124e DTB143TS PNP TRANSISTOR a144E transistor 96286B
Text: Transistors DTA113TKA DTC123TKA SPEC-A113T (SPEC-C123T) 467 Transistors Digital transistors (built-in resistors) DTA113ZE / DTA113ZUA / DTA113ZKA / DTA113ZSA FFeatures 1) The built-in bias resistor allows the configuration of an inverter circuit without connecting any external input resistors (see Equivalent circuit).
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DTA113TKA
DTC123TKA
SPEC-A113T)
SPEC-C123T)
DTA113ZE
DTA113ZUA
DTA113ZKA
DTA113ZSA
94S-504A113Z)
96-306-B143T)
c125t
a144* transistor
A143E
resistors
DTA113Zs
a124e
DTB143TS PNP TRANSISTOR
a144E transistor
96286B
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power 22E
Abstract: micro-x micro-x mhz ghz microwave MPSIG001 S21E S22E
Text: M-Pulse Microwave Low OperatingVoltage, High fT SiGe Microwave Transistors Features • Designed for Battery Operation • fT to 14 GHz • Low Voltage Oscillator and Amplifier • Low Phase Noise and Noise Figure • Hermetic Packaging and Die Available • Can be Screened to JANTX, JANTXV Equivalent Levels
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MPSIG001
MPSIG001
MPSIG001-535)
MPSIG001-535
power 22E
micro-x
micro-x mhz ghz microwave
S21E
S22E
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NTE486
Abstract: No abstract text available
Text: NTE486 Silicon NPN Transistor RF High Frequency Amplifier Description: The NTE486 is a silicon NPN high frequency RF transistor in a TO39 type package designed for use in 12.5V UHF large–signal applications required in industrial equipment. Features: D Specified 12.5V, 470MHz Characteristics:
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NTE486
NTE486
470MHz
100MHz
100mA,
200MHz
470MHz
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NTE361
Abstract: No abstract text available
Text: NTE361 Silicon NPN Transistor RF Power Output PO = 2W @ 512MHz Description: The NTE361 is a silicon NPN transistor designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 512MHz. Features: D Specified 12.5 Volt, 470MHz Characteristics:
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NTE361
512MHz
NTE361
512MHz.
470MHz
100mA
470MHz
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IC 4558 CIRCUIT DIAGRAM
Abstract: preamplifier 4558 circuit diagram BTL POWER AMPLIFIER ic 4558 preamplifier 4558 circuit TRANSISTOR POWER AMPLIFIER ic 4558 ic 4558 pin diagram TRANSISTOR BTL POWER AMPLIFIER ic 4558 ic 4558 8 pins TRANSISTOR 4558 cd 4558
Text: Optical disc ICs 4-channel BTL driver for CD players BA6793FP The BA6793FP is a 4-channel BTL driver for CD player actuators and motors. This IC has an internal 5V regulator and a standard operational amplifier, making it suitable for a wide spectrum of applications.
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BA6793FP
BA6793FP
28-pin
IC 4558 CIRCUIT DIAGRAM
preamplifier 4558 circuit diagram
BTL POWER AMPLIFIER ic 4558
preamplifier 4558 circuit
TRANSISTOR POWER AMPLIFIER ic 4558
ic 4558 pin diagram
TRANSISTOR BTL POWER AMPLIFIER ic 4558
ic 4558 8 pins
TRANSISTOR 4558
cd 4558
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toroid ferrite smps inductor
Abstract: pot core inductor emi TOROIDS Design Considerations smps inductor filter design LT1073-5 1800R 18R224 18R334 18R474 HP4192A
Text: INDUCTOR APPLICATIONS Contents terminology . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-46 data sheet parameters . . . . . . . . . . . . . . . . . . . . . . 3-46 other parameters . . . . . . . . . . . . . . . . . . . . . . . . . 3-47 inductor types . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-47
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J135
Abstract: 552 transistor motorola J13-5
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF10502 Microwave Pulse Power Transistor Designed for 1025 – 1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. 500 W PEAK 1025 – 1150 MHz MICROWAVE POWER
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MRF10502
Collect450
MRF10502
J135
552 transistor motorola
J13-5
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fuji step motor
Abstract: No abstract text available
Text: High Performance Multifunctional Inverters Maximum Engineering for Global Advantage FUJI INVERTERS With the flexibility and functionality to support a wide range of applications on all types of mechanical equipment, the FRENIC-MEGA takes core capability, responsiveness, environmental awareness, and
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MEH655a
C09a/C08)
fuji step motor
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TRANSISTOR 2n697
Abstract: 2N697S 2N696S 2N697 2N696 TRANSISTOR 2n696
Text: The documentation and process conversion measures necessary to comply with this amendment shall be completed by 16 May, 2000. MIL-S-19500/99E AMENDMENT 3 16 February, 2000 SUPERSEDING AMENDMENT 2 15 July 1986 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN,
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MIL-S-19500/99E
2N696,
2N697,
2N696S
2N697S
MIL-S-19500/99E,
MIL-S-19500/99E
TRANSISTOR 2n697
2N697S
2N697
2N696
TRANSISTOR 2n696
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2N2920
Abstract: 2n2919 2N2920U lake transistor transistor 2N2919 2N2919U
Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
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MIL-PRF-19500
2N2919
2N2920
2N2919L
2N2920L
2N2919U
2N2920U
2N2920U)
T4-LDS-0202
2N2920
2N2920U
lake transistor
transistor 2N2919
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ls-4000
Abstract: schroff max 124
Text: S Series with PFC Data Sheet 100 Watt AC-DC Converters Features Input voltage range from 85 - 255 VAC, 50 - 60 Hz 1 or 2 isolated outputs up to 48 VDC Class I equipment • • • • • • • • • • • 111 4.4" 3U 60 2.4" 12 TE 168 6.6" Universal AC-input voltage range
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89/336/EEC
ls-4000
schroff max 124
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LS4000
Abstract: schroff 11009 023 schroff power supply 11009 hzz01209 schroff 11009 BCD20003-G LS5540-7R ls4001 schroff power supply vme LS2000
Text: S Series with PFC Data Sheet 100 Watt AC-DC PFC Converters Features Universal AC input range 100 - 240 VAC, 50 - 60 Hz 1 or 2 isolated outputs up to 56.5 VDC Class I equipment • RoHS lead-solder exemption compliant • Power factor >0.93, harmonics IEC/EN 61000-3-2
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89/336/EEC
BCD20003-G
LS4000
schroff 11009 023
schroff power supply 11009
hzz01209
schroff 11009
LS5540-7R
ls4001
schroff power supply vme
LS2000
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Untitled
Abstract: No abstract text available
Text: KSR1110 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Switching Circuit, Inverter, Interface circuit Driver circuit • Built in bias Resistor (R=10Ktt) • Complement to KSR2110 ABSOLUTE MAXIMUM RATINGS (T,=25°C) Characteristic
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KSR1110
10Ktt)
KSR2110
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Untitled
Abstract: No abstract text available
Text: KSR1101 NPN EPJTAXIAL SILICON TRANSISTOR SW ITCHING APPLICATION Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R, «4.7U1, R*=4.7kû) • Complement to KSR2101 SO T-23 ABSO LU TE MAXIMUM RATINGS (TA=25'C)
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KSR1101
KSR2101
100/iA,
lc-100//A
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K105 transistor
Abstract: transistor k105 IGT4E11 IGT4D11 IGT-4E11
Text: IGT4D11,E11 c s r 10 AMPERES 400, 500 VOLTS EQUIV. Rd S ON = 0.27 il Insulated Gate Bipolar Transistor This IGT Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and
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IGT4D11
K105 transistor
transistor k105
IGT4E11
IGT-4E11
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Untitled
Abstract: No abstract text available
Text: Transistors Digital transistors built-in resistors DTA144TE/DTA144TU A/DTA144TKA/ DTA144TCA/DTA144TSA •F e a tu re s •E x te rn a l dimensions (Units: mm) 1) Built-in bias resistors enable the configuration of an inverter circuit DTA144TE l.0±0.) without connecting external input
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DTA144TE/DTA144TU
/DTA144TKA/
DTA144TCA/DTA144TSA
DTA144TE
/DTA144TKA/DTA144TCA/DTA144TSA
100p-200
-5m-10m
-50m-t00m
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KSR1213
Abstract: No abstract text available
Text: SAMSU NG SEMICON DUC TO R .INC T'SS'II IME D | 7^1,4142 00Q7GÖS 3 | KSR1213 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In TO-92S * Sw itching circuit, Inverter. Interface circuit Driver circuit * Built in bias Reslstor(R, = 2.2K!!, R, = 47KSi)
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0007GÃ
KSR1213
47Kil)
KSR22t3
O-92S
10OfiA
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vqe 24 d
Abstract: vqe 24 e VQE 23 E vqe 23 vqe 14 E VQE 21 d vqe 23 f vqe 23 c IGT6D20 IGT6E20
Text: IGT6D20,E20 20 AMPERES 400,500 VOLTS EQUIV. Rd S ON = 0.12 0 Insulated Gate Bipolar Transistor This IG T" Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and
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IGT6D20
vqe 24 d
vqe 24 e
VQE 23 E
vqe 23
vqe 14 E
VQE 21 d
vqe 23 f
vqe 23 c
IGT6E20
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2n5302
Abstract: 2N5301 2N5303 Motorola transistor 358 TRANSISTOR 2n5302 motorola 2n5303 358 motorola 2N4399 pnp
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5301 2N 5302 2N 5303 H igh-Pow er NPN Silicon lYansistors ‘Motorola Prtftrrxi D*vlc* . . . for use in power amplifier and switching circuits applications. • H ig h Collector-Emitter Sustaining Voltage — VcEO sus = 80 Vdc (Min) @ lc = 200 mAdc (2N5303)
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2N5303)
2N5301,
2N5302)
2N4398,
2N4399
2N5745
2N510
2N5301
2n5302
2N5303
Motorola transistor 358
TRANSISTOR 2n5302
motorola 2n5303
358 motorola
2N4399 pnp
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BFT46
Abstract: No abstract text available
Text: • L.bSB'm DD253fll 31T H A P X N AUER PHILIPS/DISCRETE b7E » BFT46 y v N-CHANNEL SILICON FET Symmetrical n-channel silicon epitaxial planar junction field-effect transistor in a microminiature plastic envelope. The transistor is intended for low level general purpose amplifiers in thick and thin-film
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DD253fll
BFT46
0D253fib
00ES367
BFT46
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