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    TRANSISTOR 3341 Search Results

    TRANSISTOR 3341 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 3341 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor BUJ100

    Abstract: cfl circuits cfl Self-Oscillating Philips cfl buj100 equivalent BALLAST low loss philips buj100 transistor BEP transistor BUJ100 cfl circuit
    Text: PHILIPS SEMICONDUCTORS APPLICATION NOTE Philips' BUJ100 transistor in TO-92 suits all Compact Fluorescent Lamp powers Philips Semiconductors has developed a new generation of planar passivated, fast switching bipolar lighting transistor that breaks new ground in lighting-transistor technology. Rated at 700 V


    Original     		PDF BUJ100 transistor BUJ100 cfl circuits cfl Self-Oscillating Philips cfl buj100 equivalent BALLAST low loss philips buj100 transistor BEP transistor cfl circuit

    2A marking

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PBSS2515F NPN transistor Product specification 2000 Oct 25 Philips Semiconductors Product specification NPN transistor PBSS2515F PINNING FEATURES • Low VCEsat PIN • High current capabilities. APPLICATIONS DESCRIPTION


    Original     		PDF M3D425 PBSS2515F SC-89 OT490) PBSS3515F. MAM410 PBSS2515F 613514/01/pp8 2A marking

    301 marking code PNP transistor

    Abstract: PBSS4350D PBSS5350D
    Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D302 PBSS5350D PNP transistor Product specification 2000 Mar 08 Philips Semiconductors Product specification PNP transistor PBSS5350D PINNING FEATURES • High current capabilities PIN • Low VCEsat.


    Original     		PDF M3D302 PBSS5350D 603506/01/pp8 301 marking code PNP transistor PBSS4350D PBSS5350D

    PBSS4350D

    Abstract: PBSS5350D MCD920
    Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D302 PBSS4350D NPN transistor Product specification 2000 Mar 08 Philips Semiconductors Product specification NPN transistor PBSS4350D PINNING FEATURES • High current capabilities PIN • Low VCEsat.


    Original     		PDF M3D302 PBSS4350D 603506/01/pp8 PBSS4350D PBSS5350D MCD920

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PBSS3515F PNP transistor Product specification 2000 Oct 25 Philips Semiconductors Product specification PNP transistor PBSS3515F PINNING FEATURES • Low VCEsat PIN • High current capabilities. APPLICATIONS DESCRIPTION


    Original     		PDF M3D425 PBSS3515F SC-89 OT490) PBSS2515F. MAM411 PBSS3515F 613514/01/pp8

    TRANSISTOR D 471

    Abstract: BLF1047 BP317
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D390 BLF1047 UHF power LDMOS transistor Preliminary specification Supersedes data of 1999 July 01 2000 Feb 02 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF1047 FEATURES PINNING - SOT541A


    Original     		PDF M3D390 BLF1047 OT541A 603516/04/pp8 TRANSISTOR D 471 BLF1047 BP317

    BLA1011-200

    Abstract: BP317
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLA1011-200 Avionics LDMOS transistor Preliminary specification 2000 Aug 02 Philips Semiconductors Preliminary specification Avionics LDMOS transistor BLA1011-200 PINNING - SOT502A FEATURES • High power gain


    Original     		PDF M3D379 BLA1011-200 OT502A f4825 BLA1011-200 BP317

    BLA1011-200

    Abstract: BP317
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLA1011-200 Avionics LDMOS transistor Preliminary specification 2001 Feb 27 Philips Semiconductors Preliminary specification Avionics LDMOS transistor BLA1011-200 PINNING - SOT502A FEATURES • High power gain


    Original     		PDF M3D379 BLA1011-200 OT502A f4825 BLA1011-200 BP317

    BLF1043

    Abstract: SOT538
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D438 BLF1043 UHF power LDMOS transistor Preliminary specification 2001 Jan 23 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF1043 PINNING - SOT538A FEATURES • High power gain


    Original     		PDF M3D438 BLF1043 OT538A 603516/02/pp8 BLF1043 SOT538

    TEKELEC

    Abstract: 1800 ldmos sot540a transistor 2001 H1
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D392 BLF647 UHF power LDMOS transistor Preliminary specification 2001 July 24 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF647 PINNING - SOT540A FEATURES • High power gain PIN DESCRIPTION


    Original     		PDF M3D392 BLF647 BLF647 OT540A MBK777 budgetnum/printrun/ed/pp15 TEKELEC 1800 ldmos sot540a transistor 2001 H1

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D438 BLA1011-2 Avionics LDMOS transistor Preliminary specification 2001 June 07 Philips Semiconductors Preliminary specification Avionics LDMOS transistor BLA1011-2 PINNING - SOT538A FEATURES • High power gain


    Original     		PDF M3D438 BLA1011-2 OT538A) BLA1011-2 OT538A

    BLF2043F

    Abstract: BP317 enamelled copper wire
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D381 BLF2043F UHF power LDMOS transistor Preliminary specification 2000 Oct 19 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF2043F PINNING - SOT467C FEATURES • High power gain PIN DESCRIPTION


    Original     		PDF M3D381 BLF2043F OT467C 603516/02/pp11 BLF2043F BP317 enamelled copper wire

    22 pf TEKELEC

    Abstract: BLF647 transistor 2001 H1
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D392 BLF647 UHF power LDMOS transistor Preliminary specification 2001 Mar 27 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF647 PINNING - SOT540A FEATURES • High power gain PIN DESCRIPTION


    Original     		PDF M3D392 BLF647 BLF647 OT540A MBK777 budgetnum/printrun/ed/pp15 22 pf TEKELEC transistor 2001 H1

    BLF1046

    Abstract: BP317 TEKELec 467
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D381 BLF1046 UHF power LDMOS transistor Preliminary specification 2000 Sep 20 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF1046 PINNING - SOT467C FEATURES • High power gain PIN DESCRIPTION


    Original     		PDF M3D381 BLF1046 OT467C 603516/04/pp11 BLF1046 BP317 TEKELec 467

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLA1011-200 Avionics LDMOS transistor Preliminary specification 2000 Nov 21 Philips Semiconductors Preliminary specification Avionics LDMOS transistor BLA1011-200 PINNING - SOT502A FEATURES • High power gain


    Original     		PDF M3D379 BLA1011-200 OT502A) BLA1011-200 OT502A

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D390 BLF1047 UHF power LDMOS transistor Preliminary specification 2001 Jan 25 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF1047 PINNING - SOT541A FEATURES • High power gain PIN DESCRIPTION


    Original     		PDF M3D390 BLF1047 BLF1047 OT541A OT541A) 603516/04/pp11

    SMD marking code 55B

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PSMN005-55B; PSMN005-55P N-channel logic level TrenchMOS TM transistor Product specification October 1999 Philips Semiconductors N-channel logic level Product specification TrenchMOS(TM) FEATURES transistor SYMBOL PSMN005-55B;


    Original     		PDF PSMN005-55B; PSMN005-55P PSMN005-55P SMD marking code 55B

    BCX17

    Abstract: BCX19 BP317
    Text: DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D088 BCX19 NPN general purpose transistor Product specification Supersedes data of 1999 Apr 12 2000 Jul 28 Philips Semiconductors Product specification NPN general purpose transistor BCX19 FEATURES PINNING


    Original     		PDF M3D088 BCX19 BCX17. MAM255 613514/04/pp8 BCX17 BCX19 BP317

    BLF2022-40

    Abstract: BP317
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D750 BLF2022-40 UHF power LDMOS transistor Preliminary specification 2001 April 05 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF2022-40 PINNING FEATURES • High power gain PIN DESCRIPTION


    Original     		PDF M3D750 BLF2022-40 125002/02/pp6 BLF2022-40 BP317

    BLF861

    Abstract: BLF861A UT70 821 ceramic capacitor
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D392 BLF861A UHF power LDMOS transistor Preliminary specification 2000 Aug 04 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF861A PINNING - SOT540A FEATURES • High power gain PIN DESCRIPTION


    Original     		PDF M3D392 BLF861A OT540A 613524/09/pp13 BLF861 BLF861A UT70 821 ceramic capacitor

    BLF1047

    Abstract: BP317
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D390 BLF1047 UHF power LDMOS transistor Preliminary specification 2000 Oct 23 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF1047 PINNING - SOT541A FEATURES • High power gain PIN DESCRIPTION


    Original     		PDF M3D390 BLF1047 OT541A 603516/04/pp11 BLF1047 BP317

    sot467

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D381 BLA1011-10 Avionics LDMOS transistor Preliminary specification 2001 June 07 Philips Semiconductors Preliminary specification Avionics LDMOS transistor BLA1011-10 PINNING - SOT467C FEATURES • High power gain PIN DESCRIPTION


    Original     		PDF M3D381 BLA1011-10 OT467C) BLA1011-10 OT467C sot467

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D381 BLF1046 UHF power LDMOS transistor Preliminary specification 2000 Aug 30 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF1046 PINNING - SOT467C FEATURES • High power gain PIN DESCRIPTION


    Original     		PDF M3D381 BLF1046 BLF1046 OT467C OT467C) 603516/04/pp11

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D438 BLF1043 UHF power LDMOS transistor Objective specification 2000 Feb 17 Philips Semiconductors Objective specification UHF power LDMOS transistor BLF1043 FEATURES PINNING - SOT538A • High power gain


    Original     		PDF M3D438 BLF1043 BLF1043 OT538A OT538A) 603516/01/pp8