TRANSISTOR 3052 Search Results

TRANSISTOR 3052 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR 3052 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
BD135 Abstract: BD136 MJD47 MRF20030 RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ MOTOROLA 727 Text: MOTOROLA Order this document by MRF20030/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line MRF20030 RF Power Bipolar Transistor 30 W, 2.0 GHz NPN SILICON BROADBAND RF POWER TRANSISTOR • Specified 26 Volts, 2.0 GHz, Class AB, Two–Tones Characteristics	Original	PDF	MRF20030/D MRF20030 BD135 BD136 MJD47 MRF20030 RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ MOTOROLA 727
TH 2190 mosfet Abstract: AN1955 MRF21180 MRF21180R6 Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF21180/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line RF Power Field Effect Transistor MRF21180R6 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFET	Original	PDF	MRF21180/D MRF21180R6 TH 2190 mosfet AN1955 MRF21180 MRF21180R6
marking CODE n3 6PIN Abstract: MOSFET TRANSISTOR SMD MARKING CODE nh INK0001AC RT8H 2SA798 equivalent 2SC2259 marking code NJ SMD Transistor MC931 diode smd transistor marking A7 p7 transistor smd marking ka p7 Text: ２０１０年３月版 Sales Guide セールスガイド小信号トランジスタダイオード/リニアIC Small Signal TransistorＤiodes / Linear IC 目次 INDEX 形名について The Type Name of the Transistor ･･･････････････････････････････ 2	Original	PDF	2SA1235 marking CODE n3 6PIN MOSFET TRANSISTOR SMD MARKING CODE nh INK0001AC RT8H 2SA798 equivalent 2SC2259 marking code NJ SMD Transistor MC931 diode smd transistor marking A7 p7 transistor smd marking ka p7
MOSFET 1300 F2 Abstract: 465B AN1955 CDR33BX104AKWS MRF19125 MRF19125R3 3052 mosfet Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF19125/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line RF Power Field Effect Transistor MRF19125R3 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFET	Original	PDF	MRF19125/D MRF19125R3 MOSFET 1300 F2 465B AN1955 CDR33BX104AKWS MRF19125 MRF19125R3 3052 mosfet
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF9060M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF9060MBR1 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies	Original	PDF	MRF9060M/D MRF9060MBR1 DEVICEMRF9060M/D
93F2975 Abstract: transistor WB1 Text: MOTOROLA Order this document by MRF9060M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF9060MBR1 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies	Original	PDF	MRF9060M/D MRF9060MBR1 DEVICEMRF9060M/D 93F2975 transistor WB1
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF9060M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF9060MBR1 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies	Original	PDF	MRF9060M/D MRF9060MBR1 DEVICEMRF9060M/D
mallory 150 series Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line MRF20030R RF Power Bipolar Transistor Designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high gain and broadband performance of this	Original	PDF	Inte153 MRF20030R mallory 150 series
Untitled Abstract: No abstract text available Text: ultrasonic sensor diffuse mode sensor Q45UBB63BCQ6 • ■ lower and upper switching range limit adjustable via teach button normally open or normally closed output functions ■ adjustable response time ■ pump function ■ pnp transistor output normally open	Original	PDF	Q45UBB63BCQ6 24VDC 2013-07-13T08 D-45472
Untitled Abstract: No abstract text available Text: ultrasonic sensor diffuse mode sensor Q45UBB63BC • ■ lower and upper switching range limit adjustable via teach button normally open or normally closed output functions ■ adjustable response time ■ pump function ■ pnp transistor output normally open	Original	PDF	Q45UBB63BC 24VDC SMB30A SMB30MM SMB30SC 2013-07-13T08 D-45472
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF19125 Rev. 7, 10/2008 RF Power Field Effect Transistor MRF19125SR3 Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier	Original	PDF	MRF19125 MRF19125SR3 MRF19125
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF19125/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line RF Power Field Effect Transistor MRF19125R3 N - Channel Enhancement - Mode Lateral MOSFET Designed for PCN and PCS base station applications with frequencies from	Original	PDF	MRF19125/D MRF19125R3 MRF19125/D
Untitled Abstract: No abstract text available Text: ultrasonic sensor diffuse mode sensor Q45UBB63DAQ6 • ■ lower and upper switching range limit adjustable via teach button normally open or normally closed output functions ■ adjustable response time ■ pump function ■ ■ pnp/npn transistor output normally	Original	PDF	Q45UBB63DAQ6 24VDC 2013-07-13T08 D-45472
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF21085-1 Rev. 10, 10/2008 RF Power Field Effect Transistor MRF21085LR3 Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier	Original	PDF	MRF21085--1 MRF21085LR3

MOSFET 1300 F2 Abstract: 100B100JCA500X 465B CDR33BX104AKWS MRF19125 MRF19125R3 Text: Freescale Semiconductor Technical Data Document Number: MRF19125 Rev. 8, 10/2008 RF Power Field Effect Transistor MRF19125R3 Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier	Original	PDF	MRF19125 MRF19125R3 MOSFET 1300 F2 100B100JCA500X 465B CDR33BX104AKWS MRF19125 MRF19125R3
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF21180/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line RF Power Field Effect Transistor MRF21180R6 N - Channel Enhancement - Mode Lateral MOSFET Designed for W- CDMA base station applications with frequencies from 2110	Original	PDF	MRF21180/D MRF21180R6 MRF21180/D
2sb504 Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52 Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle	OCR Scan	PDF
LG color tv Circuit Diagram schematics Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007 Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY	OCR Scan	PDF	3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
IC HXJ 2038 Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY	OCR Scan	PDF
1N6227 Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY	OCR Scan	PDF
BUK443 Abstract: BUK443-100A BUK443-100B Text: N AMER PHI LIPS /DISCRETE bTE D • b 1=53^31 D D 3 DSSD 112 M A P X Philips Sem iconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in	OCR Scan	PDF	bbS3T31 BUK443-100A/B -SOT186 -100A -ID/100 BUK443 BUK443-100A BUK443-100B
74h32 Abstract: MC3021 MC3051 MC3023 MC3151 C3109 MC3029 MC3060 MC3025 MC3001 Text: em o, öö INTEGRATED CIRCUITS FROM MOTOROLA D f f liT f H DDD MC3000 Series 0 to +75°C /M C 74H 00 MC3100 Series ( - 5 5 to +125°C )/M C 54H 00 IS S U E A M T T L III integrated circuits comprise a family of transistor transistor logic designed for general purpose digital applications.	OCR Scan	PDF	MC3000 /MC74H00 MC3100 /MC54H00 MC3052/MC3152 74h32 MC3021 MC3051 MC3023 MC3151 C3109 MC3029 MC3060 MC3025 MC3001
scr 2n4444 Abstract: light operated scr alarm MRD3056 photo transistor mrd3056 2n4444 transistor NPN 2n4444 MRD3050 color sensitive PHOTO TRANSISTOR 2n5060 transistor MRD3055 Text: MRD3050 silicon thru MRD3056 NPN SILICON PHOTO TRANSISTOR . . . designed fo r application in industrial inspection, processing and control, counters, sorters, switching and logic circuits or any design requiring radiation sensitivity, and stable characteristics.	OCR Scan	PDF	MRD3050 MRD3056 MRD3050 AN-508, 2N5060 MPS6516 2N4444* 2N4444 scr 2n4444 light operated scr alarm MRD3056 photo transistor mrd3056 2n4444 transistor NPN color sensitive PHOTO TRANSISTOR 2n5060 transistor MRD3055
ksd 302 250v, 10a Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643 Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle	OCR Scan	PDF	CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643

TRANSISTOR 3052 Search Results

TRANSISTOR 3052 Result Highlights (5)

TRANSISTOR 3052 Datasheets Context Search

BD135

TH 2190 mosfet

marking CODE n3 6PIN

MOSFET 1300 F2

Untitled

93F2975

Untitled

mallory 150 series

Untitled

Untitled

Untitled

Untitled

Untitled

Untitled

MOSFET 1300 F2

Untitled

2sb504

LG color tv Circuit Diagram schematics

IC HXJ 2038

1N6227

BUK443

74h32

scr 2n4444

ksd 302 250v, 10a