Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR 3006 Search Results

    TRANSISTOR 3006 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 3006 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC945

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SC945 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR  DESCRIPTION The UTC 2SC945 is an audio frequency amplifier high frequency OSC NPN transistor.  FEATURES * Collector-Emitter voltage:


    Original     		PDF 2SC945 2SC945 150mA 2SA733 2SC945L-x-T92-B 2SC945G-x-T92-B 2SC945L-x-T92-K 2SC945G-x-T92-K QW-R201-005

    mmbt945

    Abstract: MMBT733 audio output TRANSISTOR NPN 094B BVCBO-50V
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT945 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR „ DESCRIPTION The UTC MMBT945 is an audio frequency amplifier high frequency OSC NPN transistor. „ FEATURES * Collector-Emitter Voltage:


    Original     		PDF MMBT945 MMBT945 150mA MMBT733 MMBT945G-x-AE3-R MMBT945G-x-AL3-R OT-23 OT-323 QW-R206-094 MMBT733 audio output TRANSISTOR NPN 094B BVCBO-50V

    2sc945

    Abstract: 2SC945L 2SC945 R
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SC945 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR DESCRIPTION 1 The UTC 2SC945 is an audio frequency amplifier high frequency OSC NPN transistor. TO-92 FEATURES * Collector-Emitter voltage:


    Original     		PDF 2SC945 2SC945 150mA 2SA733 2SC945L 2SC945-x-T92-B 2SC945L-x-T92-B 2SC945-x-T92-K 2SC945L-x-T92-K 2SC945L 2SC945 R

    2SC945

    Abstract: 2SC945L 2SC945G transistor 2sc945 2SC945 transistor 2SC945 DATASHEET 2Sc945 equivalent 2sC945 npn transistor 2SC945 Q equivalent 2SC945 R
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SC945 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR „ DESCRIPTION The UTC 2SC945 is an audio frequency amplifier high frequency OSC NPN transistor. „ FEATURES * Collector-Emitter voltage:


    Original     		PDF 2SC945 2SC945 150mA 2SA733 2SC945L 2SC945G 2SC945-x-T92-B 2SC945-x-T92-K 2SC945L-x-T92-B 2SC945L-x-T92-K 2SC945L 2SC945G transistor 2sc945 2SC945 transistor 2SC945 DATASHEET 2Sc945 equivalent 2sC945 npn transistor 2SC945 Q equivalent 2SC945 R

    mmbt945

    Abstract: MMBT733 audio output TRANSISTOR NPN BVCBO-50V Amplifier Transistor NPN 40V 100mA
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT945 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR „ DESCRIPTION The UTC MMBT945 is an audio frequency amplifier high frequency OSC NPN transistor. „ FEATURES * Collector-Emitter voltage:


    Original     		PDF MMBT945 MMBT945 150mA MMBT733 MMBT945L MMBT945G MMBT945-x-AE3-R MMBT945-x-AL3-R MMBT945L-x-AE3-R MMBT945G-x-AE3-R MMBT733 audio output TRANSISTOR NPN BVCBO-50V Amplifier Transistor NPN 40V 100mA

    2SC945 P

    Abstract: 2sc945 npn transistor
    Text: UTC 2SC945 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR DESCRIPTION The UTC 2SC945 is an audio frequency amplifier high frequency OSC NPN transistor. 1 FEATURES *Collector-Emitter voltage: BVCBO=50V *Collector current up to 150mA


    Original     		PDF 2SC945 2SC945 150mA 2SA733 QW-R201-005 2SC945 P 2sc945 npn transistor

    2SC945

    Abstract: 2SC945 DATASHEET 2SC945 Q equivalent 2SA733 2sc945 npn transistor
    Text: UTC 2SC945 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR DESCRIPTION The UTC 2SC945 is an audio frequency amplifier high frequency OSC NPN transistor. 1 FEATURES *Collector-Emitter voltage: BVCBO=50V *Collector current up to 150mA


    Original     		PDF 2SC945 2SC945 150mA 2SA733 QW-R201-005 2SC945 DATASHEET 2SC945 Q equivalent 2SA733 2sc945 npn transistor

    LB1233

    Abstract: LB1234 Array Of Independent Diodes, Dip16 LB1231 LB1232 IN4 diode
    Text: Ordering number : EN1188F Monolithic Digital IC LB1231 Series High-Voltage, Large Current Darlington Transistor Array Overview The circuit configuration of this IC is of 7-channel Darlington transistor array consisting of NPN transistors. It is especially


    Original     		PDF EN1188F LB1231 500mA) LB1231 LB1232 LB1233 LB1234 LB1233 LB1234 Array Of Independent Diodes, Dip16 LB1232 IN4 diode

    2sa733

    Abstract: 2SC945 DATASHEET 2SC945
    Text: UTC 2SA733 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC 2SA733 is an low frequency amplifier. 1 FEATURES *Collector-Emitter voltage: BVCBO=-50V *Collector current up to –150mA *High hFE linearity


    Original     		PDF 2SA733 2SA733 150mA 2SC945 2SC945 DATASHEET 2SC945

    2SA733

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SA733 PNP SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR  DESCRIPTION The UTC 2SA733 is a low frequency amplifier.  FEATURES * Collector-emitter voltage: BVCEO=-50V * Collector current up to -150mA


    Original     		PDF 2SA733 2SA733 -150mA 2SC945 2SA733L-x-AE3-R 2SA733G-x-AE3-R 2SA733L-x-AL3-R 2SA733G-x-AL3-R 2SA733L-x-T92-R 2SA733G-x-T92-R

    2SA733

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SA733 PNP SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR  DESCRIPTION The UTC 2SA733 is a low frequency amplifier.  FEATURES * Collector-emitter voltage: BVCEO=-50V * Collector current up to -150mA


    Original     		PDF 2SA733 2SA733 -150mA 2SC945 2SA733L-x-AE3-R 2SA733G-x-AE3-R 2SA733L-x-AL3-R 2SA733G-x-AL3-R 2SA733L-x-T92-B 2SA733G-x-T92-B

    2SA733

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SA733 PNP SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR  DESCRIPTION The UTC 2SA733 is a low frequency amplifier.  FEATURES * Collector-emitter voltage: BVCEO=-50V * Collector current up to -150mA


    Original     		PDF 2SA733 2SA733 -150mA 2SC945 2SA733G-x-AE3-R 2SA733G-x-AL3-R 2SA733L-x-T92-B 2SA733G-x-T92-B 2SA733L-x-T92-K 2SA733G-x-T92-K

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SA733 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC 2SA733 is an low frequency amplifier. 1 FEATURES *Collector-Emitter voltage: BVCBO=-50V *Collector current up to –150mA *High hFE linearity


    Original     		PDF 2SA733 2SA733 150mA 2SC945 QW-R201-003

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SA733 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC 2SA733 is an low frequency amplifier. 1 FEATURES *Collector-Emitter voltage: BVCBO=-50V *Collector current up to –150mA *High hFE linearity


    Original     		PDF 2SA733 2SA733 150mA 2SC945 QW-R201-003

    D1616A

    Abstract: utc d1616a d1616 TRANSISTOR D1616 transistor d1616a 2sd1616 silicon transistor npn d1616 transistor
    Text: UTC 2SD1616/A NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR DESCRIPTION *Audio frequency power amplifier *Medium speed switching 1 TO-92 1: EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE UNIT Tstg -55 ~+150


    Original     		PDF 2SD1616/A D1616 D1616A width10ms, QW-R201-008 utc d1616a TRANSISTOR D1616 transistor d1616a 2sd1616 silicon transistor npn d1616 transistor

    pnp transistor 6V

    Abstract: 2SA733
    Text: UTC 2SA733 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION 3 The UTC 2SA733 is an low frequency amplifier. 1 FEATURES *Collector-Emitter voltage: BVCBO=-50V *Collector current up to –150mA *High hFE linearity


    Original     		PDF 2SA733 2SA733 150mA 2SC945 OT-23 QW-R206-068 pnp transistor 6V

    D1616A

    Abstract: d1616 transistor d1616a utc d1616a UTC d1616
    Text: UTC 2SD1616/A NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR DESCRIPTION *Audio frequency power amplifier *Medium speed switching 1 SOT-89 1: EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE UNIT Tstg -55 ~+150


    Original     		PDF 2SD1616/A OT-89 D1616 D1616A width10ms, QW-R208-015 transistor d1616a utc d1616a UTC d1616

    D1616A

    Abstract: utc d1616a d1616 transistor d1616a TRANSISTOR D1616 npn switching transistor Ic 100mA D1616A g TRANSISTOR pc 135 audio output TRANSISTOR NPN
    Text: UTC 2SD1616/A NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR DESCRIPTION *Audio frequency power amplifier *Medium speed switching 1 SOT-89 1: EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE UNIT Tstg -55 ~+150


    Original     		PDF 2SD1616/A OT-89 D1616 D1616A width10ms, 100mA 100mA utc d1616a transistor d1616a TRANSISTOR D1616 npn switching transistor Ic 100mA D1616A g TRANSISTOR pc 135 audio output TRANSISTOR NPN

    2SA733

    Abstract: No abstract text available
    Text: UTC 2SA733 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION 3 The UTC 2SA733 is an low frequency amplifier. 1 FEATURES *Collector-Emitter voltage: BVCBO=-50V *Collector current up to –150mA *High hFE linearity


    Original     		PDF 2SA733 2SA733 150mA 2SC945 OT-23 QW-R206-068

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors 2SC2785 TRANSISTOR NPN TO-92S FEATURES z High voltage VCEO:50V z Excellent hFE Linearity:0.92 TYP hFE1 (0.1mA)/ hFE2 (1mA) z Complementary to 2SA1175 PNP transistor


    Original     		PDF O-92S 2SC2785 O-92S 2SA1175 100mA,

    trr 30-06xx2

    Abstract: 30-06xx2 TRR25-10XX2 II10-04L5
    Text: S E A BROüJ N/ ABB □ □40300 S. EMI C0h □□□□SOS 3 ' o I 1 J V - 5 is s a Transistor-Module T R R . Transistor-Modules TRR. 2 Leistungstransistoren m it 2 Freilaufdioden 2 Power transistors with 2 free wheeling diodes Transistor Type/Type Vcex


    OCR Scan     		PDF 25-10xx2 30-06xx2 50-06xx2 50-10xx2 50-12xx2 75-10xx2 100-10XX2 100-12xx2 150-10xx2 200-10xx2 trr 30-06xx2 30-06xx2 TRR25-10XX2 II10-04L5

    TRR25-10XX2

    Abstract: TRR 100-12xx2 transistor c282 trr 30-06xx2 TRANSISTOR BIPOLAIRE 75-10xx2 06XX2 50-10XX2 5012-X ISOLA DE 156
    Text: A S E A B R Oü JN /AB B □□40300 S.ENICOÎ' □□□□SOS Transistor-Module T R R . Transistor-Modules TRR. 2 Leistungstransistoren mit 2 Freilaufdioden 2 Power transistors with 2 free wheeling diodes 1 J V - 5 3 ' o I Transistor Type/Type ATRR ATRR


    OCR Scan     		PDF 25-10xx2 30-06xx2 50-06XX2 50-10xx2 50-12XX2 75-10x 200-10XX2 300-10xx2 10-04L5 TRR25-10XX2 TRR 100-12xx2 transistor c282 trr 30-06xx2 TRANSISTOR BIPOLAIRE 75-10xx2 06XX2 5012-X ISOLA DE 156

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan     		PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    MMBT2222

    Abstract: No abstract text available
    Text: SAMSUNG SEMICONDUCTOR INC MMBT2222 14E D 7^ 4145 Q0075S3 T | NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SO T-23 ABSOLUTE MAXIMUM RATINGS (T,=25°C Characteristic CoBector-Base Voltage Codector-Emltter Voltage Emitter-Base Voltage Collector Current


    OCR Scan     		PDF 1b414E 0007253M MMBT2222 lo-10mA,