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    TRANSISTOR 2SD667 Search Results

    TRANSISTOR 2SD667 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2SD667 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


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    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


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    KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD667 NPN SILICON TRANSISTOR SILICON NPN EPITAXIAL  DESCRIPTION The UTC 2SD667 is a NPN epitaxial silicon transistor, which can be used as a low frequency power amplifier.  FEATURES * Low frequency power amplifier 


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    2SD667 2SD667 2SD667L-x-T9N-B 2SD667G-x-T9N-B 2SD667L-x-T9N-K 2SD667G-x-T9N-K O-92NL QW-R211-019 PDF

    290A transistor

    Abstract: transistor 2sd667 2SD667
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD667 NPN SILICON TRANSISTOR SILICON NPN EPITAXIAL „ DESCRIPTION The UTC 2SD667 is a NPN epitaxial silicon transistor, which can be used as a low frequency power amplifier. „ FEATURES * Low frequency power amplifier „ ORDERING INFORMATION


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    2SD667 2SD667 2SD667L-T9N-B 2SD667G-T9N-B 2SD667L-T9N-K 2SD667G-T9N-K O-92NL QW-R211-019 290A transistor transistor 2sd667 PDF

    290A transistor

    Abstract: 2SD667 transistor 2sd667
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD667 NPN SILICON TRANSISTOR SILICON NPN EPITAXIAL „ DESCRIPTION The UTC 2SD667 is a NPN epitaxial silicon transistor, which can be used as a low frequency power amplifier. „ FEATURES * Low frequency power amplifier * Halogen Free


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    2SD667 2SD667 2SD667G-T9N-B 2SD667G-T9N-K O-92NL QW-R211-019 290A transistor transistor 2sd667 PDF

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


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    Untitled

    Abstract: No abstract text available
    Text: UNISONICTECHNOLOGIESCO., LTD 2SD667 NPN SILICON TRANSISTOR SI LI CON N PN EPI T AX I AL  DESCRI PT I ON The UTC 2SD667 is a NPN epitaxial silicon transistor, which can be used as a low frequency power amplifier.  FEAT U RES * Low frequency power amplifier


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    2SD667 2SD667 2SD667L-x-T9N-B 2SD667G-x-T9N-B 2SD667L-x-T9N-K 2SD667G-x-T9N-K O-92NL QW-R211-019 PDF

    rjh3047

    Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
    Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing


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    REJ01G0001-0400 rjh3047 rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055 PDF

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 PDF

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 993 395 pnp npn transistor 2SA 101 TRANSISTOR 2SC 635 transistor 2Sb 474 transistor 2SC458 transistor 2sc2512 transistor 2sk 168 transistor 2SD 1153 3SK228
    Text: Index Bipolar Transistor PNP, High Frequency Use 2SA Type 2SA673 . 81 2SA 673A . 81


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    2SA673 2SA778 BB101C BB301M BB301C Transistor 2SA 2SB 2SC 2SD 993 395 pnp npn transistor 2SA 101 TRANSISTOR 2SC 635 transistor 2Sb 474 transistor 2SC458 transistor 2sc2512 transistor 2sk 168 transistor 2SD 1153 3SK228 PDF

    2SC 8550

    Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
    Text: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4


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    3SK309 3SK317 3SK318 BB101C BB102C BB301C BB302C BB304C BB305C BB501C 2SC 8550 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545 PDF

    2SD667A

    Abstract: No abstract text available
    Text: DC COMPONENTS CO., LTD. 2SD667A DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for low frequency power amplifier applications. TO-92 Pinning .190 4.83 .170(4.33) 1 = Emitter 2 = Collector 3 = Base


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    2SD667A 500mA, 150mA, 2SD667A PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors 2SD667,2SD667A TO-92L TRANSISTOR NPN FEATURES z Low frequency power amplifier z Complementary pair with 2SB647/A 1. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


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    O-92L 2SD667 2SD667A O-92L 2SB647/A 2SD667 150mA 500mA PDF

    2SD667

    Abstract: 2sd667 2sb647 transistor 2SD667 2sb647 2sd667 2SD667A 2SB647
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors 2SD667,2SD667A TO-92L TRANSISTOR NPN FEATURES z Low frequency power amplifier z Complementary pair with 2SB647/A 1. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


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    O-92L 2SD667 2SD667A O-92L 2SB647/A 2SD667 150mA 500mA 2sd667 2sb647 transistor 2SD667 2sb647 2sd667 2SD667A 2SB647 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors 2SD667,2SD667A TO-92L TRANSISTOR NPN FEATURES z Low Frequency Power Amplifier z Complementary Pair with 2SB647/A 1. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


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    O-92L 2SD667 2SD667A O-92L 2SB647/A 2SD667 150mA PDF

    2sd667

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SD667,2SD667A TO-92MOD TRANSISTOR NPN FEATURES z Low frequency power amplifier z Complementary pair with 2SB647/A 1. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


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    O-92MOD 2SD667 2SD667A O-92MOD 2SB647/A 2SD667 150mA 500mA PDF

    2sd667

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SD667,2SD667A TO-92MOD TRANSISTOR NPN FEATURES z Low Frequency Power Amplifier z Complementary Pair with 2SB647/A 1. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


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    O-92MOD 2SD667 2SD667A O-92MOD 2SB647/A 2SD667 150mA PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SB647/2SB647A TO – 92M TO – 92MOD TRANSISTOR PNP 1. COLLECTOR 1. EMITTER 2. BASE FEATURES z Low Frequency Power Amplifier z Complementary Pair with 2SD667/A


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    O-92MOD 2SB647/2SB647A 92MOD 2SD667/A 2SB647 2SB647A -500mA -150mA PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SD667, 2SD667A TO-92MOD TRANSISTOR NPN 1. EMITTER FEATURES Power dissipation 2. COLLECTOR PCM: 0.9 W (Tamb=25℃) 3. BASE Collector current 1 A ICM: Collector-base voltage


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    O-92MOD 2SD667, 2SD667A O-92MOD 2SD6677 2SD667 150mA 500mA PDF

    2SD667AC

    Abstract: No abstract text available
    Text: 2SD667A 1A , 120V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92MOD FEATURES Low Frequency Power Amplifier Complementary Pair with 2SB647A A D B K E CLASSIFICATION OF hFE 1


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    2SD667A O-92MOD 2SB647A 2SD667A-B 2SD667A-C 2SD667A-D 7-Oct-2011 150mA 500mA 500mA, 2SD667AC PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors TO – 92L 2SB647 TRANSISTOR PNP 1. EMITTER 2. COLLECTOR FEATURES z Low Frequency Power Amplifier z Complementary Pair with 2SD667 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


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    O-92L 2SB647 2SD667 -100V -150mA -500mA -500mA -50mA PDF

    2SD667

    Abstract: transistor 2sd667 2SD6677 2SD667-2SD667A 2SD667A 2SD667 equivalent
    Text: 2SD667-2SD667A 2SD667, 2SD667A TO-92MOD TRANSISTOR NPN FEATURES Power dissipation 1. EMITTER 2. COLLECTOR PCM: 0.9 W (Tamb=25℃) 3. BASE Collector current ICM: 1 A Collector-base voltage 120 V V(BR)CBO: Operating and storage junction temperature range 123


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    2SD667-2SD667A 2SD667, 2SD667A O-92MOD 2SD6677 2SD667 150mA 500mA 2SD667 transistor 2sd667 2SD6677 2SD667-2SD667A 2SD667A 2SD667 equivalent PDF

    2SD667A

    Abstract: 2SD667AC
    Text: 2SD667A 1A , 120V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92MOD FEATURES   Low Frequency Power Amplifier Complementary Pair with 2SB647A A D B K E CLASSIFICATION OF hFE 1


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    2SD667A O-92MOD 2SB647A 2SD667A-B 2SD667A-C 2SD667A-D 150mA 500mA 500mA, 2SD667A 2SD667AC PDF

    2sd667

    Abstract: 2sd667 2sb647 transistor 2sd667 2sb647 2sd667 2Sd667a 2SD667 TRANSISTOR TO-92L TO 92L NPN Transistor
    Text: 2SD667/2SD667A TO-92L Transistor NPN TO-92L 1. EMITTER 4.700 5.100 2. COLLECTOR 7.800 8.200 3. BASE 1 Features — — 2 3 0.600 0.800 Low frequency power amplifier Complementary pair with 2SB647/A 0.350 0.550 13.800 14.200 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


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    2SD667/2SD667A O-92L O-92L 2SB647/A 2SD667 2SD667A 500mA 2sd667 2sb647 transistor 2sd667 2sb647 2sd667 2SD667 TRANSISTOR TO-92L TO 92L NPN Transistor PDF