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    TRANSISTOR 2SD261 Search Results

    TRANSISTOR 2SD261 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2SD261 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SB1674

    Abstract: 2SD2615 transistor 120v
    Text: 2SB1674 Transistors Power Transistor −120V, −6A 2SB1674 !External dimensions (Units : mm) !Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SD2615.


    Original     		PDF 2SB1674 -120V, 2SD2615. O-220FN -120V 10MHz 2SB1674 2SD2615 transistor 120v

    2SB1674

    Abstract: 2SD2615
    Text: 2SD2615 Transistors For Motor / Relay drive 120V, 6A 2SD2615 zStructure NPN Silicon Epitaxial Planar Transistor (Darlington connection) zExternal dimensions (Unit : mm) TO-220FN 4.5 φ3.2 2.8 8.0 15.0 1.2 1.3 14.0 5.0 zFeatures 1) Darlington connection , high hFE.


    Original     		PDF 2SD2615 O-220FN 2SB1674 2SB1674 2SD2615

    Untitled

    Abstract: No abstract text available
    Text: 2SD2614 Transistors For Motor / Relay drive 60±10V, 5A 2SD2614 zStructure NPN Silicon Epitaxial Planar Transistor (Darlington connection) zExternal dimensions (Unit : mm) TO-220FN zApplications Solenoid drive 8.0 1.2 5.0 15.0 2.8 1.3 0.8 (1)Base 2.54 (2)Collector


    Original     		PDF 2SD2614 O-220FN

    2SB1676

    Abstract: 2SD2618
    Text: 2SB1676 Transistors Medium Power Transistor Motor, Relay drive (−80V, −4A) 2SB1676 !External dimensions (Units : mm) !Features 1) Darlington connection for a high hFE. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SD2618.


    Original     		PDF 2SB1676 2SD2618. O-220FN 10MHz 2SB1676 2SD2618

    2SD2614

    Abstract: No abstract text available
    Text: 2SD2614 Transistors Medium Power Transistor Motor, Relay drive (60±10V, 5A) 2SD2614 !Features 1) Built-in zener diode between collector and base. 2) Strong protection against reverse surges due to "L" loads. 3) Built-in resistor between base and emitter.


    Original     		PDF 2SD2614 O-220FN 2SD2614

    2SD2616

    Abstract: No abstract text available
    Text: 2SD2616 Transisitors Power Transistor 100V, 5A 2SD2616 !Features 1) Low saturation voltage, typically VCE(sat) = -0.3V at IC / IB=3A / 0.3A. 2) Excellent hFE current characteristics. 3) Pc=30W. (Tc=25°C) !Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage


    Original     		PDF 2SD2616 100ms O-220FN 2SD2616

    2SB1672

    Abstract: 2SD2611
    Text: 2SD2611 Transistors Power Transistor 80V, 7A 2SD2611 !Features 1) Low saturation voltage, typically VCE(sat) = 0.3V at IC / IB =4 / 0.4A. 2) Excellent DC current gain characteristics. 3) Pc = 30W (Tc = 25°C) 4) Wide SOA (safe operating area). 5) Complements the 2SB1672.


    Original     		PDF 2SD2611 2SB1672. 100ms 2SB1672 2SD2611

    2SB1674

    Abstract: 2SD2615 transistor 120v
    Text: 2SD2615 Transistors Power Transistor 120V, 6A 2SD2615 !Circuit diagram !Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SB1674. C B R1 R2 E R1 5.0kΩ


    Original     		PDF 2SD2615 2SB1674. 10MHz 2SB1674 2SD2615 transistor 120v

    2SB1676

    Abstract: 2SD2618 doide base, collector, emitter
    Text: 2SD2618 Transistors Power Transistor 80V, 4A 2SD2618 !Circuit diagram !Features 1) Darlington connection for a high hFE. 2) Built-in resistor between base and emitter. 3) Built-in damper doide. 4) Complements the 2SB1676. C B R E R B C E 300Ω : Base : Collector


    Original     		PDF 2SD2618 2SB1676. 100ms) 10MHz 2SB1676 2SD2618 doide base, collector, emitter

    2SB1672

    Abstract: 2SD2611
    Text: 2SB1672 Transistors Power Transistor −80V, −7A 2SB1672 !External dimensions (Units : mm) !Features 1) Low saturation voltage. (Typ. VCE(sat) = −0.3V at IC / IB =−4A / −0.4A) 2) Excellent DC current gain characteristics. 3) Pc = 30W (Tc = 25°C).


    Original     		PDF 2SB1672 2SD2611. 2SB1672 2SD2611

    2SB1674

    Abstract: 2SD2615
    Text: 2SB1674 Transistors For Motor / Relay drive −120V, −6A 2SB1674 zStructure PNP Silicon Epitaxial Planar Transistor (Darlington connection) zExternal dimensions (Unit : mm) TO-220FN 4.5 φ3.2 2.8 8.0 15.0 1.2 1.3 14.0 5.0 zFeatures 1) Darlington connection, high hFE.


    Original     		PDF 2SB1674 -120V, O-220FN 2SD2615 -120ipment 2SB1674 2SD2615

    CTX12S

    Abstract: SLA4038 fn651 SLA4037 sla1004 CTB-34D SAP17N 2SC5586 2SK1343 CTPG2F
    Text: <Semiconductor Discontinued and Service Parts> 2010.2.4 Alternative Part No. 2SA744 2SA745 2SA746 2SA747 2SA764 2SA765 2SA768 2SA769 2SA770 2SA771 2SA807 2SA808 2SA878 2SA892 2SA907 2SA908 2SA909 2SA957 2SA958 2SA971 2SA980 2SA981 2SA982 2SA1067 2SA1068 2SA1102


    Original     		PDF 2SA744 2SA745 2SA746 2SA747 2SA764 2SA765 2SA768 2SA769 2SA770 2SA771 CTX12S SLA4038 fn651 SLA4037 sla1004 CTB-34D SAP17N 2SC5586 2SK1343 CTPG2F

    fn651

    Abstract: CTB-34D 2SC5586 hvr-1x7 STR20012 sap17n 2sd2619 RBV-4156B SLA4037 2sk1343
    Text: <Semiconductor Discontinued and Service Parts> 2010.8.20 Alternative Part No. 2SA744 2SA745 2SA746 2SA747 2SA764 2SA765 2SA768 2SA769 2SA770 2SA771 2SA807 2SA808 2SA878 2SA892 2SA907 2SA908 2SA909 2SA957 2SA958 2SA971 2SA980 2SA981 2SA982 2SA1067 2SA1068 2SA1102


    Original     		PDF 2SA744 2SA745 2SA746 2SA747 2SA764 2SA765 2SA768 2SA769 2SA770 2SA771 fn651 CTB-34D 2SC5586 hvr-1x7 STR20012 sap17n 2sd2619 RBV-4156B SLA4037 2sk1343

    SK 18752

    Abstract: SK 18751 2SC5586 SI-18752 fn651 709332a CTB-34D SLA6102 SLA4052 SI 18751
    Text: Bulletin No O03ED0 （May, 2008） SEMICONDUCTORS GENERAL CATALOG ICS TRANSISTORS THYRISTORS DIODES LEDS LE D Diode I C Thyristor Tr a n s i s t o r SANKEN ELECTRIC CO., LTD. http://www.sanken-ele.co.jp/en/index.html Warning ● The contents in this document are subject to changes, for improvement and other purposes,


    Original     		PDF O03ED0 dete7837 H1-O03ED0-0805020NM SK 18752 SK 18751 2SC5586 SI-18752 fn651 709332a CTB-34D SLA6102 SLA4052 SI 18751

    2SD2615

    Abstract: 2SB1674
    Text: 2SD2615 Transistors_ Power Transistor 120V, 6A 2SD2615 •Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. •Circuit diagram 3) Built-in damper diode. 4) Complements the 2SB1674.


    OCR Scan     		PDF 2SD2615 2SB1674. 100ms 2K-20K 10MHz 2SD2615 2SB1674

    2SD2618

    Abstract: 2SB1676
    Text: 2SD2618 Transistors_ Power Transistor 80V, 4A 2SD2618 •Circuit diagram • Features 1 ) Darlington connection for a high hre. 2) Built-in resistor between base and emitter. 3) Built-in damper ddde. 4) Complements the 2SB1676.


    OCR Scan     		PDF 2SD2618 2SB1676. 100ms) O-220FN 1k-10k characterist10k 10MHz 2SD2618 2SB1676

    TO-220FN

    Abstract: 2SB1674 2SD2615 2sd26
    Text: 2SB1674 Transistors Power Transistor -120V, -6A 2SB1674 •External dimensions (Units: mm) •Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SD2615.


    OCR Scan     		PDF 2SB1674 -120V, 2SD2615. O-220FN -10MHZ TO-220FN 2SB1674 2SD2615 2sd26

    2SD2614

    Abstract: transistor collector diode protection TO-220FN diode zener 40v OA 70 diode 2sd26
    Text: 2SD2614 Transistors Medium Power Transistor Motor, Relay drive (60±10V, 5A) 2SD2614 •Features 1) Built-in zener diode between collector and base. 2) Strong protection against reverse surges due to "L" loads. 3) Built-in resistor between base and emitter.


    OCR Scan     		PDF 2SD2614 O-220FN 2k-30k oo24imfa 2SD2614 transistor collector diode protection TO-220FN diode zener 40v OA 70 diode 2sd26

    2SB1676

    Abstract: 2SD2618 2sd26
    Text: 2SB1676 Transistors Medium Power Transistor Motor, Relay drive (-80V, -4A) 2SB1676 •External dimensions (Units: mm) •Features 1) Darlington connection for a high hre. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SD2618.


    OCR Scan     		PDF 2SB1676 2SD2618. -50nA -50pA 10MHz 2SB1676 2SD2618 2sd26

    ic 3A hfe 500

    Abstract: ib3a 2SD2616 2sd26
    Text: 2SD2616 Transisitors Power Transistor 100V, 5A 2SD2616 ! Features 1) Low saturation voltage, typically VcE(sat) = -0.3V at Ic / Ib=3A / 0.3A. 2) Excellent hFE current characteristics. 3) Pc=30W. (Tc=25°C) I Absolute maximum ratings (Ta=25°C) S ym bol Lim its


    OCR Scan     		PDF 2SD2616 O-220FN ic 3A hfe 500 ib3a 2SD2616 2sd26

    2SB1672

    Abstract: 2SD2611
    Text: 2SD2611 Transistors Power Transistor 80V, 7A 2SD2611 • Features 1) Low saturation voltage, typically Vc^sat) = 0.3V at Ic / 2) Excellent DC current gain characteristics. Ib =4 / 0.4A. 3) Pc = 30W (Tc = 25°C) 4) Wide SOA (safe operating area). 5) Complements the 2SB1672.


    OCR Scan     		PDF 2SD2611 2SB1672. 100ms O-220FN 2SB1672 2SD2611

    LT 672

    Abstract: 2SB1672 2SD2611
    Text: 2SD2611 Transistors Power Transistor 80V, 7A 2SD2611 • Features 1 ) Low saturation voltage, typically Versai) = 0.3V at le / 2) Excellent DC current gain characteristics. Ib =4 / Q.4A. 3) Pc = 30W (Te = 25°C) 4) Wide SOA (safe operating area). 5) Complements the 2SB1672.


    OCR Scan     		PDF 2SD2611 2SB1672. 100ms O-220FN 50fiA LT 672 2SB1672 2SD2611

    2SB1672

    Abstract: 2SD2611
    Text: 2SD2611 Transistors Power Transistor 80V, 7A 2SD2611 • Features 1) Low saturation voltage, typically Vc^sat) = 0.3V at le / 2) Excellent DC cument gain characteristics. Ib =4 / 0.4A. 3) Pc = 30W (Te = 25°C) 4) Wide SOA (safe operating area). 5) Complements the 2SB1672.


    OCR Scan     		PDF 2SD2611 2SB1672. 100ms O-220FN B444S 2SB1672 2SD2611

    2SB1672

    Abstract: S-100-12 2SD2611
    Text: 2SB1672 Transistors Power Transistor -80V, -7A 2SB1672 •External dimensions (Units : mm) •Features 1) Low saturation voltage. (Typ. Versât) = -0.3V at le / Ib =-4A / -0.4A) 2) Excellent DC current gain characteristics. 3) Pc = 30W (Te = 25°C). 4) Wide SOA (safe operating area).


    OCR Scan     		PDF 2SB1672 2SD2611. O-220FN -50tiA 2SB1672 S-100-12 2SD2611