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    TRANSISTOR 2SD1691 Search Results

    TRANSISTOR 2SD1691 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SD1691-AZ Renesas Electronics Corporation Bipolar Power Transistors, MP-5, / Visit Renesas Electronics Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2SD1691 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


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    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


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    PDF KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j

    2SD1691

    Abstract: 2SB1151
    Text: PRELIMINARY PRODUCT INFORMATION SILICON POWER TRANSISTOR 2SD1691 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCEY POWER AMPLIFIERS AND MID-SPEED SWITCHING FEATURES PACKAGE DRAWING UNIT: mm • Large current capacity and low VCE(sat): IC(DC) = 5.0 A, IC(pulse) = 8.0 A


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    PDF 2SD1691 O-126 2SB1151 2SD1691 2SB1151

    2SD1691

    Abstract: No abstract text available
    Text: ST 2SD1691 NPN Silicon Epitaxial Power Transistor For Low-Frequencey Power Amplifiers and Mid-Speed Switching The transistor is subdivided into three groups, M, L and K, according to its DC-DC current gain. FEATURES: •Large current capacity and low VCE sat :


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    PDF 2SD1691 O-126 PW350 2SD1691

    Untitled

    Abstract: No abstract text available
    Text: ST 2SD1691T NPN Silicon Epitaxial Power Transistor For Low-Frequencey Power Amplifiers and Mid-Speed Switching The transistor is subdivided into three groups, M, L and K, according to its DC-DC current gain. E C B TO-126 Plastic Package Absolute Maximum Ratings Ta = 25 OC


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    PDF 2SD1691T O-126

    Untitled

    Abstract: No abstract text available
    Text: ST 2SD1691T NPN Silicon Epitaxial Power Transistor For Low-Frequencey Power Amplifiers and Mid-Speed Switching The transistor is subdivided into three groups, M, L and K, according to its DC-DC current gain. E C B TO-126 Plastic Package Absolute Maximum Ratings Ta = 25 OC


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    PDF 2SD1691T O-126

    2SA1444 equivalent

    Abstract: BA1F4M transistor equivalent table POWER MOS FET 2sj 2sk 2sd882 equivalent Equivalent to transistor 2sc945 2SA1206 TRANSISTOR equivalent 2SC1845 equivalent 2SK type 2SD1694 equivalent
    Text: CD-ROM Transistor CD-ROM X13769XJ2V0CD00 08-1 Transistor Quick Reference by Package TO–92 • TO-92 Type Transistor VCEO V ~15 ~30 ~50 ~70 ~100 ~150 ~200 ~250 2SA1376 2SA1376A 2SC3478 2SC3478A 2SA1544 ~400 IC (A) ~20 m 2SC1674 2SA1206∗2SA988 2SA992


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    PDF X13769XJ2V0CD00 2SA1206 2SC1674 2SA988 2SA992 2SC1841 2SC1845 2SA733 2SA990 2SC945 2SA1444 equivalent BA1F4M transistor equivalent table POWER MOS FET 2sj 2sk 2sd882 equivalent Equivalent to transistor 2sc945 2SA1206 TRANSISTOR equivalent 2SC1845 equivalent 2SK type 2SD1694 equivalent

    2SB1151

    Abstract: 2SD1691 D16190EJ1V1DS00
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SD1691 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCEY POWER AMPLIFIERS AND MID-SPEED SWITCHING FEATURES PACKAGE DRAWING UNIT: mm • Large current capacity and low VCE(sat): IC(DC) = 5.0 A, IC(pulse) = 8.0 A VCE(sat) = 0.1 V TYP. (@IC = 2.0 A, IB = 0.2 A)


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    PDF 2SD1691 O-126 2SB1151 2SB1151 2SD1691 D16190EJ1V1DS00

    2SD1557

    Abstract: 2SA1152 2SC4333 high hfe transistor 2SB1581 2SC4063 high hfe darlington transistor sc70 2sB1099 transistor transistor nec 2SB1099
    Text: Transistor Quick Reference by Package • TO-92 Type Transistor VCEO V ~15 ~30 ~50 ~70 ~100 ~150 ~200 ~250 2SA1376 2SA1376A 2SC3478 2SC3478A 2SA1544 ~400 IC (A) ~20 m 2SC1674 ~30 m 2SC1675 2SA1005 2SA1206* TO–92 2SA988 2SA992 2SC1841 2SC1845 ~50 m ~100 m


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    PDF 2SA1376 2SA1376A 2SC3478 2SC3478A 2SA1544 2SC1674 2SC1675 2SA1005 2SA1206* 2SA988 2SD1557 2SA1152 2SC4333 high hfe transistor 2SB1581 2SC4063 high hfe darlington transistor sc70 2sB1099 transistor transistor nec 2SB1099

    2SB1151 y

    Abstract: 2SB1151 2SB1151L 2SD1691 2sb115 2SB1151-LAZ
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1151 PNP SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT „ FEATURES *High Power Dissipation *Complementary to 2SD1691 *Pb-free plating product number: 2SB1151L „ ORDERING INFORMATION Ordering Number Normal


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    PDF 2SB1151 2SD1691 2SB1151L 2SB1151-T60-K 2SB1151L-T60-K 2SB1151-TN3-R 2SB1151L-TN3-R 2SB1151-TN3-T 2SB1151L-TN3-T O-126 2SB1151 y 2SB1151 2SB1151L 2SD1691 2sb115 2SB1151-LAZ

    2SD1691

    Abstract: transistor 2sd1691 2SB1151 2SD1691L 2SD*1691
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD1691 NPN SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT 1 TO-220 FEATURES *High Power Dissipation *Complementary to 2SB1151 1 TO-126 1 TO-126C *Pb-free plating product number:2SD1691L ORDERING INFORMATION


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    PDF 2SD1691 O-220 2SB1151 O-126 O-126C 2SD1691L 2SD1691-x-T60-K 2SD1691L-x-T60-K 2SD1691-x-T6C-K 2SD1691L-x-T6C-K 2SD1691 transistor 2sd1691 2SB1151 2SD1691L 2SD*1691

    2SB1151L-T60-T

    Abstract: 2SB1151 2SB1151L 2SB1151-T60-T 2SD1691 1K TRANSISTOR
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1151 PNP EPITAXIAL SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT FEATURES *High Power Dissipation : PD=1.5W Ta=25℃ *Complementary to 2SD1691. 1 TO - 126 *Pb-free plating product number: 2SB1151L PIN CONFIGURATION


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    PDF 2SB1151 2SD1691. 2SB1151L 2SB1151-T60-T 2SB1151L-T60-T O-126 QW-R204-022 2SB1151L-T60-T 2SB1151 2SB1151L 2SD1691 1K TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1151 PNP SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT  FEATURES *High Power Dissipation *Complementary to 2SD1691  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SB1151G-x-AA3-R 2SB1151L-x-T60-K


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    PDF 2SB1151 2SD1691 2SB1151G-x-AA3-R 2SB1151L-x-T60-K 2SB1151G-x-T60-K 2SB1151L-x-TN3-R 2SB1151G-x-TN3-R OT-223 O-126 O-252

    2SB1151 y

    Abstract: 2SB1151-L(AZ)
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1151 PNP SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT „ FEATURES *High Power Dissipation *Complementary to 2SD1691 „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SB1151L-x-AA3-R 2SB1151G-x-AA3-R


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    PDF 2SB1151 2SD1691 2SB1151L-x-AA3-R 2SB1151G-x-AA3-R 2SB1151L-x-T60-K 2SB1151G-x-T60-K 2SB1151L-x-TN3-R 2SB1151G-x-TN3-R OT-223 O-126 2SB1151 y 2SB1151-L(AZ)

    2SB1151

    Abstract: 2SD1691
    Text: UTC 2SD1691 NPN EPITAXIAL SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT FEATURES *High Power Dissipation: Pc=1.5W Ta=25℃ *Complementary to 2SB1151 1 TO-126C 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS (Ta=25℃) PARAMETER Collector-Base Voltage


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    PDF 2SD1691 2SB1151 O-126C PW10ms Cycle50% QW-R217-003 2SB1151

    2SD1691

    Abstract: 2SD1691L 2SB1151 TO-220F1 NPN
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD1691 NPN SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT „ 1 TO-220 FEATURES *High Power Dissipation *Complementary to 2SB1151 1 TO-220F1 1 TO-126 1 TO-126C „ ORDERING INFORMATION Ordering Number Lead Free Plating


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    PDF 2SD1691 O-220 2SB1151 O-220F1 O-126 O-126C 2SD1691L-x-T60-K 2SD1691G-x-T60-K 2SD1691L-x-T6C-K 2SD1691G-x-T6C-K 2SD1691 2SD1691L 2SB1151 TO-220F1 NPN

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SD1691 NPN EPITAXIAL SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT FEATURES *High Power Dissipation: Pc=1.5W Ta=25℃ *Complementary to 2SB1151 1 TO-126 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS (Ta=25℃) PARAMETER Collector-Base Voltage


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    PDF 2SD1691 2SB1151 O-126 PW10ms Cycle50% QW-R204-015

    Solenoid Driver 2a

    Abstract: 2SB1151 2SD1691
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1151 DESCRIPTION •High Collector Current -IC= -5A ·Low Collector Saturation Voltage : VCE sat = -0.3V(Max.)@ IC= -2A ·Complement to Type 2SD1691 APPLICATIONS ·Designed for use in DC-DC converter, or driver of solenoid


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    PDF 2SB1151 2SD1691 Solenoid Driver 2a 2SB1151 2SD1691

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SD1691 NPN EPITAXIAL SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT FEATURES *High Power Dissipation: Pc=1.5W Ta=25℃ *Complementary to 2SB1151 1 TO-126C 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS (Ta=25℃) PARAMETER Collector-Base Voltage


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    PDF 2SD1691 2SB1151 O-126C QW-R217-003

    2SD1691

    Abstract: 2SB1151
    Text: UTC 2SD1691 NPN EPITAXIAL SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT FEATURES *High Power Dissipation: Pc=1.5W Ta=25℃ *Complementary to 2SB1151 1 TO-126 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS (Ta=25℃) PARAMETER Collector-Base Voltage


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    PDF 2SD1691 2SB1151 O-126 PW10ms Cycle50% QW-R204-015 2SB1151

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD1691 NPN SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT 1 1 TO-220F1 TO-220  FEATURES *High Power Dissipation *Complementary to 2SB1151 1 1 TO-126 TO-126C 1  ORDERING INFORMATION Ordering Number Lead Free Plating


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    PDF 2SD1691 O-220F1 O-220 2SB1151 O-126 O-126C 2SD1691L-x-TA3-T 2SD1691G-x-TA3-T 2SD1691L-x-TF1-T 2SD1691G-x-TF1-T

    2SD1691L

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD1691 NPN SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT  1 1 TO-220F1 TO-220 FEATURES *High Power Dissipation *Complementary to 2SB1151 1 1 TO-252 TO-251 1 1 TO-126  ORDERING INFORMATION Ordering Number


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    PDF 2SD1691 O-220F1 O-220 2SB1151 O-252 O-251 O-126 2SD1691L-x-TA3-T 2SD1691G-x-TA3-T 2SD1691L-x-TF1-T 2SD1691L

    2SB1151

    Abstract: 2SD1691
    Text: NPN SILICON POWER TRANSISTOR 2 S D 1691 DESCRIPTION The 2SD1691 is a Low V C E s a t transistor which has a large current PACKAGE DIMENSIONS capability and wide SOA. in millimeters (inches) It is suitable for DC-DC converter, or driver of solenoid or motor.


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    PDF 2SD1691 2SD1691 2SB1151. 2SB1151

    2SB1151

    Abstract: 2SD1691
    Text: PNP SILICON POWER TRANSISTOR 2SB1151 DESCRIPTION The 2SB1151 is a Low VcE sat transistor which has a large current PACKAGE DIMENSIONS capability and wide SOA. in millimeters (inches) It is suitable for DC-DC converter, or driver of solenoid or motor. FEATURES


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    PDF 2SB1151 2SB1151 2SD1691. 2SD1691