TRANSISTOR 2SC4910 Search Results

TRANSISTOR 2SC4910 Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
2SC6026MFV		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR 2SC4910 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
transistor 2sc4910 Abstract: 2SC4910 2SC4910 npn 2SC491 AX-8548 Text: Ordering number:EN4411 NPN Epitaxial Planar Silicon Transistor 2SC4910 VHF-Band Power Amplifier Applications Features Package Dimensions • On-chip emitter ballast resistors. unit:mm 2084B [2SC4910] 1.9 10.5 4.5 2.6 1.4 1.0 8.5 1.2 7.5 1.2 1.6 0.5 0.5 1 2.5	Original	EN4411 2SC4910 2084B 2SC4910] transistor 2sc4910 2SC4910 2SC4910 npn 2SC491 AX-8548	PDF
2SC4910 Abstract: ITR07744 ITR07745 ITR07746 AO117 Text: Ordering number:ENN4411 NPN Epitaxial Planar Silicon Transistor 2SC4910 VHF-Band Power Amplifier Applications Features Package Dimensions • On-chip emitter ballast resistors. unit:mm 2084B [2SC4910] 4.5 1.9 10.5 2.6 1.4 1.0 8.5 1.2 7.5 1.2 1.6 0.5 0.5 1 Specifications	Original	ENN4411 2SC4910 2084B 2SC4910] 2SC4910 ITR07744 ITR07745 ITR07746 AO117	PDF
Untitled Abstract: No abstract text available Text: Ordering number:ENN4411 NPN Epitaxial Planar Silicon Transistor 2SC4910 VHF-Band Power Amplifier Applications Features Package Dimensions • On-chip emitter ballast resistors. unit:mm 2084B [2SC4910] 4.5 1.9 10.5 2.6 1.4 1.0 8.5 1.2 7.5 1.2 1.6 0.5 0.5 1 Specifications	Original	ENN4411 2SC4910 2084B 2SC4910]	PDF
Untitled Abstract: No abstract text available Text: Ordering number: EN4411 2SC4910 NÓ.4411 NPN Epitaxial Planar Silicon Transistor VHF-Band Power Amp Applications F eatures • On-chip emitter ballast resistors. A bsolute M aximum R atings at Ta=25°C Collector-to-Base Voltage V cbo Collector-to-Emitter Voltage	OCR Scan	EN4411 2SC4910	PDF
Untitled Abstract: No abstract text available Text: Ordering num ber: EN 4411 No.4411 _ 2SC4910 N P N Epitaxial Planar Silicon Transistor VHF-Band Power Amp Applications Features • On-chip emitter ballast resistors. A bsolu te Maximum Ratings atTa=25°C Collector to Base Voltage V cbo Collector to Emitter Voltage	OCR Scan	2SC4910 42594TH AX-8548	PDF
transistor 2sc4910 Abstract: 2SC4910 2SC4910 npn 13J2 Text: Ordering num ber: EN44 11 No.4411 _ 2SC4910 NPN Epitaxial Planar Silicon Transistor SA\YO 1 VHF-Band Power Amp Applications Features • On-chip emitter ballast resistors. Absolute Maximum Ratings at Ta = 25°C Collector-to-Base Voltage Vcbo Collector-to-Emitter Voltage	OCR Scan	EN4411 2SC4910 transistor 2sc4910 2SC4910 2SC4910 npn 13J2	PDF
smd transistor marking 12W Abstract: SMD transistor Marking 13w SMD type Marking 13w SPM5001 SOT89 PNP marking GA ec3h04b smd transistor 12W 52 SMA4205 6c 6pin SGD103 Text: RF Devices Jun.2006 Hyper Device Business Unit, Semiconductor Company SANYO Electric Co.,Ltd. New Products High High Gain，Low Gain，Low Noise Noise SiRF–Bipolar Transistor MCH4009 •Packege : MCPH4 ■Features High Gain・・・\|S21e\|2=17dB＠2GHz 0.3	Original	MCH4009 17dB2GHz SC-72 SC-43 SC-51 O-226 SC-71 O-126 O-92MOD smd transistor marking 12W SMD transistor Marking 13w SMD type Marking 13w SPM5001 SOT89 PNP marking GA ec3h04b smd transistor 12W 52 SMA4205 6c 6pin SGD103	PDF