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    TRANSISTOR 2SC3279 Search Results

    TRANSISTOR 2SC3279 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2SC3279 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC3279

    Abstract: No abstract text available
    Text: ST 2SC3279 NPN Silicon Epitaxial Planar Transistor for storobo flash and medium power amplifier applications. The transistor is subdivided into four groups L, M, N and P, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SC3279 2SC3279

    2SC3279

    Abstract: No abstract text available
    Text: ST 2SC3279 NPN Silicon Epitaxial Planar Transistor for storobo flash and medium power amplifier applications. The transistor is subdivided into four groups L, M, N and P, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SC3279 2SC3279

    transistor Common collector configuration

    Abstract: 2SC3279
    Text: ST 2SC3279 NPN Silicon Epitaxial Planar Transistor for storobo flash and medium power amplifier applications. The transistor is subdivided into four groups L, M, N and P, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SC3279 transistor Common collector configuration 2SC3279

    2SC3279

    Abstract: No abstract text available
    Text: ST 2SC3279 NPN Silicon Epitaxial Planar Transistor for storobo flash and medium power amplifier applications. The transistor is subdivided into four groups L, M, N and P, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SC3279 2SC3279

    2SC5471

    Abstract: 2SC5853 2sa1015 transistor 2sc1815 transistor 2SA970 transistor 2SC5854 transistor 2sc1815 2Sc5720 transistor 2SC5766 Low-Frequency Low-Noise PNP transistor
    Text: Part Number Product Category Polarity Collector-Emitter Voltage V_CEO,max V 2SC1815 Transistor for Low-Frequency Small-Signal Amplification NPN 50.0 150.0 0.25 2SA1015 Transistor for Low-Frequency Small-Signal Amplification PNP -50.0 -150.0 -0.3 2SC2458 Transistor for Low-Frequency Small-Signal Amplification NPN


    Original     		PDF 2SC1815 2SA1015 2SC2458 2SA1048 2SC2240 2SA970 2SC2459 2SA1049 A1587 2SC4117 2SC5471 2SC5853 2sa1015 transistor 2sc1815 transistor 2SA970 transistor 2SC5854 transistor 2sc1815 2Sc5720 transistor 2SC5766 Low-Frequency Low-Noise PNP transistor

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors 2SC3279 TRANSISTOR（NPN ） TO—92 FEATURES Power amplifier applications 1. EMITTER MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value Units VCBO


    Original     		PDF 2SC3279 100mA

    Untitled

    Abstract: No abstract text available
    Text: TO-92 Plastic-Encapsulate Transistors 2SC3279 TRANSISTOR（NPN ） TO—92 FEATURES Power amplifier applications 1. EMITTER MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage


    Original     		PDF 2SC3279 100mA

    2SC3279

    Abstract: No abstract text available
    Text: 2SC3279 NPN Transistor Elektronische Bauelemente Plastic-Encapsulate Transistors RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 FEATURES 3.5 ±0.2 4.55±0.2 +0.2 4.5±0.2 High DC current gain and excellent hFE linearity 1.27 Typ.


    Original     		PDF 2SC3279 01-Jun-2002 2SC3279

    2sc3279

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors 2SC3279 TRANSISTOR NPN TO-92 FEATURES z High DC current gain and excellent hFE linearity z Low saturation voltage 1. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF 2SC3279 100mA 2sc3279

    2sc3279

    Abstract: 2SC3279-N transistor 2sC3279 2SC3279-L 2SC3279-M 2SC3279-P 2SC3279N 2SC32
    Text: 2SC3279 2A , 30V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES High DC current gain and excellent hFE linearity. Low saturation voltage. G H 1Emitter 2Collector


    Original     		PDF 2SC3279 2SC3279-L 2SC3279-M 2SC3279-N 2SC3279-P 100mA 18-Feb-2011 500mA 2sc3279 2SC3279-N transistor 2sC3279 2SC3279-P 2SC3279N 2SC32

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors 2SC3279 TRANSISTOR（NPN ） FEATURES Power dissipation PCM : 0.75 Collector current ICM : 2 Collector-base voltage V BR CBO : 30 TO—92 W （Tamb=25℃） 1. EMITTER


    Original     		PDF 2SC3279 30MHz 270TYP 050TYP

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors 2SC3279 TRANSISTOR NPN TO-92 FEATURES z High DC current gain and excellent hFE linearity z Low saturation voltage 1. EMITTER 2. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF 2SC3279 100mA

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC3279 TRANSISTOR NPN TO-92 FEATURES Power dissipation 0.75 W (Tamb=25℃) PCM: Collector current 2 A ICM: Collector-base voltage 30 V V(BR)CBO: Operating and storage junction temperature range


    Original     		PDF 2SC3279 100mA 30MHz

    2SC3279

    Abstract: No abstract text available
    Text: 2SC3279 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3279 Strobe Flash Applications Medium Power Amplifier Applications Unit: mm High DC current gain and excellent hFE linearity : hFE (1) = 140~600 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 70 (min), 200 (typ.) (VCE = 1 V, IC = 2 A)


    Original     		PDF 2SC3279 2SC3279

    2sc3279

    Abstract: No abstract text available
    Text: 2SC3279 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3279 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and excellent hFE linearity : hFE (1) = 140~600 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 70 (min), 200 (typ.) (VCE = 1 V, IC = 2 A)


    Original     		PDF 2SC3279 2sc3279

    2SC3279

    Abstract: No abstract text available
    Text: 2SC3279 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3279 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and excellent hFE linearity : hFE (1) = 140~600 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 70 (min), 200 (typ.) (VCE = 1 V, IC = 2 A)


    Original     		PDF 2SC3279 2SC3279

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


    Original     		PDF SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122

    transistor cross reference

    Abstract: transistor c1008 npn transistor c1008 NPN C1008 s8550 npn SS8550 cross reference S9014 cross reference c1008 transistor s9014 equivalent S8050 equivalent
    Text: Micro Commercial Components Small Signal Transistor Cross Reference Group by Package FORMALLY MICROSEMI CHATSWORTH SOT-23 PACKAGE MCC PART NUMBER HFE Pc mW Ic (mA) BVcbo (V) BVceo (V) Icb (µ A) vcb(V) Vce(sat) (V) fT (MHz) INDUSTRY STANDARD PART NUMBER


    Original     		PDF OT-23 S9011 S9012 S9013 S9014 S9015 S9016 S9018 S8050 S8550 transistor cross reference transistor c1008 npn transistor c1008 NPN C1008 s8550 npn SS8550 cross reference S9014 cross reference c1008 transistor s9014 equivalent S8050 equivalent

    Transistor 2SA 2SB 2SC 2SD

    Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
    Text: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)


    OCR Scan     		PDF O-126 O-126 T0-220AB, O-220 2SC4544 2SC4448 2SC3612 2BC4201 Transistor 2SA 2SB 2SC 2SD S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC3279 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3279 Unit in mm STOROBO FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS • • .5.1 M AX. High DC Current Gain and Excellent hpg Linearity : h-FE (1)= 140—600 (VCE = 1V, IC = 0,5A)


    OCR Scan     		PDF 2SC3279 Ta-25 961001EAA2'

    2SC3279

    Abstract: No abstract text available
    Text: TOSHIBA 2SC3279 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3279 Unit in mm STOROBO FLASH APPLICATIONS M EDIUM PO W ER AM PLIFIER APPLICATIONS • . 5.1 M AX. High DC Current Gain and Excellent hpg Linearity : hFE(l) = 140-600 (Vce = 1V, Ie = 0.5A)


    OCR Scan     		PDF 2SC3279 961001EAA2' 2SC3279

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC3279 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3279 STOROBO FLASH APPLICATIONS M EDIUM PO W ER AM PLIFIER APPLICATIONS U nit in mm . 5.1 M AX. • High DC Current Gain and Excellent hjpE Linearity : hE E (i) = 140—600 (V c e = 1V, Ic = 0.5A)


    OCR Scan     		PDF 2SC3279 961001EAA2'

    15J102

    Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
    Text: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811


    OCR Scan     		PDF 2SA949U50VI 2AC2229 2SA1145U50V) 2SC2705( 2SC2230 2SA817A 2SC1627A 2SA1811 2SC4707 2SA965 15J102 Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TO-92 1. TO-92 PACKAGE SERIES fsSTM ito |CJ i CD {DISCRETE/0PT0> 'N TO o > TRANSISTOR < Application NPN General Purpose 2SC1815 ! PNP i i 2SA1015 General Purpose 2SC2888 ! 2SA1158 V c e Sat MAX. hFE Type No. v CEO (V) •c PC (mA) (mW) 50 150 400


    OCR Scan     		PDF 2SC1815 2SC2888 2SA1158 2SA1015 2SC1923 2SC380TM 2SC941TM 50vMAX