2SC3279
Abstract: No abstract text available
Text: ST 2SC3279 NPN Silicon Epitaxial Planar Transistor for storobo flash and medium power amplifier applications. The transistor is subdivided into four groups L, M, N and P, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.
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2SC3279
2SC3279
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2SC3279
Abstract: No abstract text available
Text: ST 2SC3279 NPN Silicon Epitaxial Planar Transistor for storobo flash and medium power amplifier applications. The transistor is subdivided into four groups L, M, N and P, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.
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2SC3279
2SC3279
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transistor Common collector configuration
Abstract: 2SC3279
Text: ST 2SC3279 NPN Silicon Epitaxial Planar Transistor for storobo flash and medium power amplifier applications. The transistor is subdivided into four groups L, M, N and P, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.
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2SC3279
transistor Common collector configuration
2SC3279
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2SC3279
Abstract: No abstract text available
Text: ST 2SC3279 NPN Silicon Epitaxial Planar Transistor for storobo flash and medium power amplifier applications. The transistor is subdivided into four groups L, M, N and P, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.
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2SC3279
2SC3279
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2SC5471
Abstract: 2SC5853 2sa1015 transistor 2sc1815 transistor 2SA970 transistor 2SC5854 transistor 2sc1815 2Sc5720 transistor 2SC5766 Low-Frequency Low-Noise PNP transistor
Text: Part Number Product Category Polarity Collector-Emitter Voltage V_CEO,max V 2SC1815 Transistor for Low-Frequency Small-Signal Amplification NPN 50.0 150.0 0.25 2SA1015 Transistor for Low-Frequency Small-Signal Amplification PNP -50.0 -150.0 -0.3 2SC2458 Transistor for Low-Frequency Small-Signal Amplification NPN
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2SC1815
2SA1015
2SC2458
2SA1048
2SC2240
2SA970
2SC2459
2SA1049
A1587
2SC4117
2SC5471
2SC5853
2sa1015 transistor
2sc1815 transistor
2SA970 transistor
2SC5854
transistor 2sc1815
2Sc5720 transistor
2SC5766
Low-Frequency Low-Noise PNP transistor
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors 2SC3279 TRANSISTOR(NPN ) TO—92 FEATURES Power amplifier applications 1. EMITTER MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value Units VCBO
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2SC3279
100mA
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Untitled
Abstract: No abstract text available
Text: TO-92 Plastic-Encapsulate Transistors 2SC3279 TRANSISTOR(NPN ) TO—92 FEATURES Power amplifier applications 1. EMITTER MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage
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2SC3279
100mA
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2SC3279
Abstract: No abstract text available
Text: 2SC3279 NPN Transistor Elektronische Bauelemente Plastic-Encapsulate Transistors RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 FEATURES 3.5 ±0.2 4.55±0.2 +0.2 4.5±0.2 High DC current gain and excellent hFE linearity 1.27 Typ.
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2SC3279
01-Jun-2002
2SC3279
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2sc3279
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors 2SC3279 TRANSISTOR NPN TO-92 FEATURES z High DC current gain and excellent hFE linearity z Low saturation voltage 1. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
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2SC3279
100mA
2sc3279
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2sc3279
Abstract: 2SC3279-N transistor 2sC3279 2SC3279-L 2SC3279-M 2SC3279-P 2SC3279N 2SC32
Text: 2SC3279 2A , 30V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES High DC current gain and excellent hFE linearity. Low saturation voltage. G H 1Emitter 2Collector
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2SC3279
2SC3279-L
2SC3279-M
2SC3279-N
2SC3279-P
100mA
18-Feb-2011
500mA
2sc3279
2SC3279-N
transistor 2sC3279
2SC3279-P
2SC3279N
2SC32
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors 2SC3279 TRANSISTOR(NPN ) FEATURES Power dissipation PCM : 0.75 Collector current ICM : 2 Collector-base voltage V BR CBO : 30 TO—92 W (Tamb=25℃) 1. EMITTER
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2SC3279
30MHz
270TYP
050TYP
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors 2SC3279 TRANSISTOR NPN TO-92 FEATURES z High DC current gain and excellent hFE linearity z Low saturation voltage 1. EMITTER 2. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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2SC3279
100mA
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC3279 TRANSISTOR NPN TO-92 FEATURES Power dissipation 0.75 W (Tamb=25℃) PCM: Collector current 2 A ICM: Collector-base voltage 30 V V(BR)CBO: Operating and storage junction temperature range
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2SC3279
100mA
30MHz
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2SC3279
Abstract: No abstract text available
Text: 2SC3279 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3279 Strobe Flash Applications Medium Power Amplifier Applications Unit: mm High DC current gain and excellent hFE linearity : hFE (1) = 140~600 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 70 (min), 200 (typ.) (VCE = 1 V, IC = 2 A)
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2SC3279
2SC3279
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2sc3279
Abstract: No abstract text available
Text: 2SC3279 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3279 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and excellent hFE linearity : hFE (1) = 140~600 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 70 (min), 200 (typ.) (VCE = 1 V, IC = 2 A)
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2SC3279
2sc3279
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2SC3279
Abstract: No abstract text available
Text: 2SC3279 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3279 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and excellent hFE linearity : hFE (1) = 140~600 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 70 (min), 200 (typ.) (VCE = 1 V, IC = 2 A)
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2SC3279
2SC3279
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transistor bc 245
Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243
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SC-43)
2SC1815
TPS615
TPS616
TPS610
transistor bc 245
247Y
smd transistor h2a
gt30g122
gt35j321
GT45F123
MARKING SMD PNP TRANSISTOR h2a
GT45F122
GT45f122 Series
gt30f122
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transistor cross reference
Abstract: transistor c1008 npn transistor c1008 NPN C1008 s8550 npn SS8550 cross reference S9014 cross reference c1008 transistor s9014 equivalent S8050 equivalent
Text: Micro Commercial Components Small Signal Transistor Cross Reference Group by Package FORMALLY MICROSEMI CHATSWORTH SOT-23 PACKAGE MCC PART NUMBER HFE Pc mW Ic (mA) BVcbo (V) BVceo (V) Icb (µ A) vcb(V) Vce(sat) (V) fT (MHz) INDUSTRY STANDARD PART NUMBER
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OT-23
S9011
S9012
S9013
S9014
S9015
S9016
S9018
S8050
S8550
transistor cross reference
transistor c1008
npn transistor c1008
NPN C1008
s8550 npn
SS8550 cross reference
S9014 cross reference
c1008 transistor
s9014 equivalent
S8050 equivalent
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Transistor 2SA 2SB 2SC 2SD
Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
Text: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)
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O-126
O-126
T0-220AB,
O-220
2SC4544
2SC4448
2SC3612
2BC4201
Transistor 2SA 2SB 2SC 2SD
S-AU27M
S2000A inverter
P4005
S-AV21H
S-AU27
3182N
2sb 834 transistor
Transistor 2SC4288A
Drive IC 2SC3346
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC3279 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3279 Unit in mm STOROBO FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS • • .5.1 M AX. High DC Current Gain and Excellent hpg Linearity : h-FE (1)= 140—600 (VCE = 1V, IC = 0,5A)
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2SC3279
Ta-25
961001EAA2'
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2SC3279
Abstract: No abstract text available
Text: TOSHIBA 2SC3279 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3279 Unit in mm STOROBO FLASH APPLICATIONS M EDIUM PO W ER AM PLIFIER APPLICATIONS • . 5.1 M AX. High DC Current Gain and Excellent hpg Linearity : hFE(l) = 140-600 (Vce = 1V, Ie = 0.5A)
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2SC3279
961001EAA2'
2SC3279
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC3279 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3279 STOROBO FLASH APPLICATIONS M EDIUM PO W ER AM PLIFIER APPLICATIONS U nit in mm . 5.1 M AX. • High DC Current Gain and Excellent hjpE Linearity : hE E (i) = 140—600 (V c e = 1V, Ic = 0.5A)
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2SC3279
961001EAA2'
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15J102
Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
Text: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811
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2SA949U50VI
2AC2229
2SA1145U50V)
2SC2705(
2SC2230
2SA817A
2SC1627A
2SA1811
2SC4707
2SA965
15J102
Transistor 2SC4288A
Transistor 2SA 2SB 2SC 2SD
Drive IC 2SC3346
2sa 102 transistor
transistor 2SA 101
50J301
02SC5030
T15J103
Driver IC 2SC3346
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TO-92 1. TO-92 PACKAGE SERIES fsSTM ito |CJ i CD {DISCRETE/0PT0> 'N TO o > TRANSISTOR < Application NPN General Purpose 2SC1815 ! PNP i i 2SA1015 General Purpose 2SC2888 ! 2SA1158 V c e Sat MAX. hFE Type No. v CEO (V) •c PC (mA) (mW) 50 150 400
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2SC1815
2SC2888
2SA1158
2SA1015
2SC1923
2SC380TM
2SC941TM
50vMAX
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