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    TRANSISTOR 2SA1627 Search Results

    TRANSISTOR 2SA1627 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SA1627-T-AZ Renesas Electronics Corporation Bipolar Power Transistors, , / Visit Renesas Electronics Corporation
    2SA1627-AZ Renesas Electronics Corporation Bipolar Power Transistors, , / Visit Renesas Electronics Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2SA1627 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SA1627 PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC 2SA1627 is designed for general purpose amplifier and high speed switching applications. FEATURES *High voltage *Low collector saturation voltage. *High-speed switching


    Original     		PDF 2SA1627 2SA1627 O-126 QW-R204-010

    2SA1627

    Abstract: pnp transistor 600V 2sa162
    Text: UTC 2SA1627 PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC 2SA1627 is designed for general purpose amplifier and high speed switching applications. FEATURES *High voltage *Low collector saturation voltage. *High-speed switching


    Original     		PDF 2SA1627 2SA1627 O-126 QW-R204-010 pnp transistor 600V 2sa162

    2SA1627A

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SA1627A PNP SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR  DESCRIPTION The UTC 2SA1627A is designed for general purpose amplifier and high speed switching applications.  FEATURES * High voltage * Low collector saturation voltage.


    Original     		PDF 2SA1627A 2SA1627A 2SA1627AL-x-AA3-R 2SA1627AG-x-AA3-R 2SA1627AL-x-T60-K 2SA1627AG-x-T60-K 2SA1627AL-x-T6C-K 2SA1627AG-x-T6C-K 2SA1627AL-x-TN3-R 2SA1627AG-x-TN3-R

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SA1627A PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC 2SA1627A is designed for general purpose amplifier and high speed switching applications. FEATURES *High voltage *Low collector saturation voltage. 1 *High-speed switching


    Original     		PDF 2SA1627A 2SA1627A O-126C QW-R217-004

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SA1627A PNP SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR  DESCRIPTION The UTC 2SA1627A is designed for general purpose amplifier and high speed switching applications.  FEATURES * High voltage * Low collector saturation voltage.


    Original     		PDF 2SA1627A 2SA1627A 2SA1627AL-x-AA3-R 2SA1627AG-x-AA3-R 2SA1627AL-x-TM3-T 2SA1627AG-x-TM3-T 2SA1627AL-x-TN3-R 2SA1627AG-x-TN3-R 2SA1627AL-x-T60-K 2SA1627AG-x-T60-K

    2SA1627A

    Abstract: 600v pnp
    Text: UTC 2SA1627A PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC 2SA1627A is designed for general purpose amplifier and high speed switching applications. FEATURES *High voltage *Low collector saturation voltage. 1 *High-speed switching


    Original     		PDF 2SA1627A 2SA1627A O-126C QW-R217-004 600v pnp

    pnp transistor 600V

    Abstract: PNP -600v
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SA1627A Preliminary PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR 1 „ TO-126C DESCRIPTION The UTC 2SA1627A is designed for general purpose amplifier and high speed switching applications. „ FEATURES * High voltage


    Original     		PDF 2SA1627A O-126C 2SA1627A O-126 2SA1627AL-T60-K 2SA1627AG-T60-K 2SA1627AL-T6C-K 2SA1627AG-T6C-K O-126 O-126C pnp transistor 600V PNP -600v

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SA1627A PNP SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR  DESCRIPTION The UTC 2SA1627A is designed for general purpose amplifier and high speed switching applications.  FEATURES * High voltage * Low collector saturation voltage.


    Original     		PDF 2SA1627A 2SA1627A 2SA1627AG-x-AA3-R 2SA1627AL-x-TM3-T 2SA1627AG-x-TM3-T 2SA1627AL-x-TN3-R 2SA1627AG-x-TN3-R 2SA1627AL-x-T60-K 2SA1627AG-x-T60-K 2SA1627AL-x-T6C-K

    PNP -600v

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SA1627A PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR 1 „ TO-252 DESCRIPTION The UTC 2SA1627A is designed for general purpose amplifier and high speed switching applications. 1 „ TO-126 FEATURES * High voltage


    Original     		PDF 2SA1627A O-252 2SA1627A O-126 O-126C 2SA1627AL-x-T60-K 2SA1627AG-x-T60-K 2SA1627AL-x-T6C-K 2SA1627AG-x-T6C-K 2SA1627AL-x-TN3-R PNP -600v

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SA1627A PNP SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR 1 „ TO-252 DESCRIPTION The UTC 2SA1627A is designed for general purpose amplifier and high speed switching applications. 1 „ TO-126 FEATURES * High voltage * Low collector saturation voltage.


    Original     		PDF 2SA1627A O-252 2SA1627A O-126 O-126C 2SA1627AL-x-T60-K 2SA1627AG-x-T60-K 2SA1627AL-x-T6C-K 2SA1627AG-x-T6C-K 2SA1627AL-x-TN3-R

    2SA1444 equivalent

    Abstract: BA1F4M transistor equivalent table POWER MOS FET 2sj 2sk 2sd882 equivalent Equivalent to transistor 2sc945 2SA1206 TRANSISTOR equivalent 2SC1845 equivalent 2SK type 2SD1694 equivalent
    Text: CD-ROM Transistor CD-ROM X13769XJ2V0CD00 08-1 Transistor Quick Reference by Package TO–92 • TO-92 Type Transistor VCEO V ~15 ~30 ~50 ~70 ~100 ~150 ~200 ~250 2SA1376 2SA1376A 2SC3478 2SC3478A 2SA1544 ~400 IC (A) ~20 m 2SC1674 2SA1206∗∗ 2SA988 2SA992


    Original     		PDF X13769XJ2V0CD00 2SA1206 2SC1674 2SA988 2SA992 2SC1841 2SC1845 2SA733 2SA990 2SC945 2SA1444 equivalent BA1F4M transistor equivalent table POWER MOS FET 2sj 2sk 2sd882 equivalent Equivalent to transistor 2sc945 2SA1206 TRANSISTOR equivalent 2SC1845 equivalent 2SK type 2SD1694 equivalent

    2SD1557

    Abstract: 2SA1152 2SC4333 high hfe transistor 2SB1581 2SC4063 high hfe darlington transistor sc70 2sB1099 transistor transistor nec 2SB1099
    Text: Transistor Quick Reference by Package • TO-92 Type Transistor VCEO V ~15 ~30 ~50 ~70 ~100 ~150 ~200 ~250 2SA1376 2SA1376A 2SC3478 2SC3478A 2SA1544 ~400 IC (A) ~20 m 2SC1674 ~30 m 2SC1675 2SA1005 2SA1206* TO–92 2SA988 2SA992 2SC1841 2SC1845 ~50 m ~100 m


    Original     		PDF 2SA1376 2SA1376A 2SC3478 2SC3478A 2SA1544 2SC1674 2SC1675 2SA1005 2SA1206* 2SA988 2SD1557 2SA1152 2SC4333 high hfe transistor 2SB1581 2SC4063 high hfe darlington transistor sc70 2sB1099 transistor transistor nec 2SB1099

    2sa1627

    Abstract: pnp 600v 1a pnp transistor 600V TO-126C
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 2SA1627 TRANSISTOR PNP TO-126C FEATURES Power dissipation PCM : 1.25 W (Tamb=25℃) 1. EMITTER Collector current : -1 A ICM Collector-base voltage V V(BR)CBO : -600


    Original     		PDF O-126C 2SA1627 O-126C -300mA, -60mA -100mA -250V, 2sa1627 pnp 600v 1a pnp transistor 600V TO-126C

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 2SA1627 TRANSISTOR PNP TO – 126C FEATURES z High Voltage z High Speed Switching z Low Collector Saturation Voltage 1. EMITTER 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF O-126C 2SA1627 -600V

    uPC2581

    Abstract: uPC2002 2sd1557 uPA67C uPB582 upc1237 uPC317 2P4M PIN DIAGRAM 2SC4328 uPC157
    Text: C&C for Human Potential Microcomputer 1 SEMICONDUCTOR SELECTION GUIDE GUIDE BOOK IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor / Diode / Thyristor 6 Microwave Device / Consumer Use High Frequency Device 7 Optical Device 8


    Original     		PDF PD7500 X10679EJAV0SG00 MF-1134) 1995P uPC2581 uPC2002 2sd1557 uPA67C uPB582 upc1237 uPC317 2P4M PIN DIAGRAM 2SC4328 uPC157

    sc5 s dc 6v relay

    Abstract: P48D-70-600 UPD66010 UPD7752 AC03E uPD7520 uPA1601 UPD70208H uPD72020 uPD16503
    Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 Microwave Device/ Consumer-Use High Frequency Device 7 Optical Device 8 Packages 9 Index 10 October 1997


    Original     		PDF Corpora1-504-2860 X10679EJEV0SG00 sc5 s dc 6v relay P48D-70-600 UPD66010 UPD7752 AC03E uPD7520 uPA1601 UPD70208H uPD72020 uPD16503

    uPD3599

    Abstract: transistor nec 2SK2396 MOS FET BUZ 444 MC-7643 nec 3S4M 4305 regulator nec RD2.4S equivalent 2SC4305 NEC 2sA1441 nec NPN transistor SST 117
    Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Seimi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 GaAs Device/ Silicon Microwave Semiconductor 7 Optical Device 8 Packages 9 Index 10 April 1998 The export of these products from Japan is regulated by the Japanese government. The export of some or all of


    Original     		PDF X10679EJFV0SG00 uPD3599 transistor nec 2SK2396 MOS FET BUZ 444 MC-7643 nec 3S4M 4305 regulator nec RD2.4S equivalent 2SC4305 NEC 2sA1441 nec NPN transistor SST 117

    lg crt monitor circuit diagram

    Abstract: micro servo 9g samsung lcd tv power supply diagrams MP 1008 es uPa2003 8049 microcontroller APPLICATION LG lcd tv tuner pioneer car dvd service manual lg washing machine circuit diagram 8ch pnp DARLINGTON TRANSISTOR ARRAY
    Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 GaAs Device/ Silicon Microwave Semiconductor 7 Optical Device 8 Packages 9 Index 10 October 1998 The export of these products from Japan is regulated by the Japanese government. The export of some or all of


    Original     		PDF X10679EJGV0SG00 lg crt monitor circuit diagram micro servo 9g samsung lcd tv power supply diagrams MP 1008 es uPa2003 8049 microcontroller APPLICATION LG lcd tv tuner pioneer car dvd service manual lg washing machine circuit diagram 8ch pnp DARLINGTON TRANSISTOR ARRAY

    free transistor equivalent book 2sc

    Abstract: uPA1556AH The Japanese Transistor Manual 1981 samsung UHF/VHF TV Tuner MOSFET cross-reference 2sk PD431000A-X upper arm digital sphygmomanometer circuit diagram PD72001 uPC1237 uPC 2002
    Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 RF and Microwave Devices 7 Optical Device 8 Index 9 April 1999 The export of these products from Japan is regulated by the Japanese government. The export of some or all of


    Original     		PDF X10679EJHV0SG00 free transistor equivalent book 2sc uPA1556AH The Japanese Transistor Manual 1981 samsung UHF/VHF TV Tuner MOSFET cross-reference 2sk PD431000A-X upper arm digital sphygmomanometer circuit diagram PD72001 uPC1237 uPC 2002

    Q2N4401

    Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
    Text: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog


    Original     		PDF RD91EB Q2N4401 D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751

    MICROPROCESSOR Z80

    Abstract: uPD72020 uPC5102 transistor 2p4m UPD6487 2SD1557 2SJ 3305 UPD77529 TRANSISTOR SOD MARKING CODE 352A micro servo 9g tower pro
    Text: The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call


    Original     		PDF Z80TM V20TM, V20HLTM, V25TM, V25HSTM, V30TM, V30HLTM, V33TM, V33ATM, V35TM, MICROPROCESSOR Z80 uPD72020 uPC5102 transistor 2p4m UPD6487 2SD1557 2SJ 3305 UPD77529 TRANSISTOR SOD MARKING CODE 352A micro servo 9g tower pro

    ic cd 4015

    Abstract: transistor 2SA1627 2SA1627
    Text: DATA SHEET NEC PIMP SILICON TRANSISTOR ELECTRON DEVICE 2SA1627 DESCRIPTIO N The 2SA1627 is designed for general purpose amplifier and high speed switching applications. PACKAGE D IM EN SIO N S in millimeters inches FEATURES • High Voltage. 1.2 7 .0 M A X .


    OCR Scan     		PDF 2SA1627 2SA1627 1988M ic cd 4015 transistor 2SA1627

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


    OCR Scan     		PDF

    ci 3060 pt

    Abstract: 2SA1627 transistor 2SA1627 2SA162
    Text: SEC '> ' =1 > Silicon Transistor m + T fS rtX 2SA1627 n > b=7 > '^ 7.9 PN P = PNP Silicon Triple Diffused T ran sisto r High Speed High V oltag e Switching m # -Ç -fô lü IíE T - fo o V c e o = — 600 ^ mm) 7 .0 MAX. V o x > f 7 f v 7 X h°— K * si t v ^


    OCR Scan     		PDF 2SA1627 PWS10 ci 3060 pt 2SA1627 transistor 2SA1627 2SA162