MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
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diode RU 3AM
Abstract: diode RU 4B RG-2A Diode diode RU 4AM MN638S FMM-32 SPF0001 red green green zener diode Diode RJ 4B sta464c
Text: Index by Part No. Part No. 130 Classification Page Part No. Classification Page 2SA1488 Power transistor 66 ATS611LSB Hall-Effect IC Subassembly 2SA1488A Power transistor 66 ATS612LSB Hall-Effect IC (Subassembly) 2SA1567 Power transistor 67 AU01 Fast-Recovery Rectifier Diode (Axial)
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2SA2160
Abstract: 2SA2149 2SC6005 RQW200 rdx100n45 RQA200N03 rqw200n03 RLA130N03 rdx*100n45 2sc6027
Text: 2005 Transistor New Products Ver.1 MOS FET Series Low VCE sat Miniature Digital Transistor Series Low VCE(sat) Transistor Series Endured Discharge Voltage/ High Speed Switching/ Low Noise Transistor Series Muting Transistor Series MOS FET TUMT/TSMT Series
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O-220FM
47P4869E
2SA2160
2SA2149
2SC6005
RQW200
rdx100n45
RQA200N03
rqw200n03
RLA130N03
rdx*100n45
2sc6027
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2SA1444 equivalent
Abstract: BA1F4M transistor equivalent table POWER MOS FET 2sj 2sk 2sd882 equivalent Equivalent to transistor 2sc945 2SA1206 TRANSISTOR equivalent 2SC1845 equivalent 2SK type 2SD1694 equivalent
Text: CD-ROM Transistor CD-ROM X13769XJ2V0CD00 08-1 Transistor Quick Reference by Package TO–92 • TO-92 Type Transistor VCEO V ~15 ~30 ~50 ~70 ~100 ~150 ~200 ~250 2SA1376 2SA1376A 2SC3478 2SC3478A 2SA1544 ~400 IC (A) ~20 m 2SC1674 2SA1206∗∗ 2SA988 2SA992
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X13769XJ2V0CD00
2SA1206
2SC1674
2SA988
2SA992
2SC1841
2SC1845
2SA733
2SA990
2SC945
2SA1444 equivalent
BA1F4M
transistor equivalent table
POWER MOS FET 2sj 2sk
2sd882 equivalent
Equivalent to transistor 2sc945
2SA1206 TRANSISTOR equivalent
2SC1845 equivalent
2SK type
2SD1694 equivalent
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oz960
Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors
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KIA7900PI
TC7SH04FU
KIC7SH04FU
SC604*
KAC3301QN
M51943
KIA7042AP/AF
TC7SH08FU
KIC7SH08FU
LT1937
oz960
khb*9D5N20P
MB4213
KIA78*pI
MN1280
F10P048
KIA7812A
MJE13007
mb4213 equivalent
TRANSISTOR SMD N2 3j
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2sa1576
Abstract: 2SA20
Text: 2SC2412K SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR * Feature: Package:SOT-23 1 Low Cob. Cob=2.0pF (2) Complements the 2SA1037AK/2SA1576/ 2SA1774/2SA1774H/2SA2029/2SA933AS.
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2SC2412K
OT-23
2SA1037AK/2SA1576/
2SA1774/2SA1774H/2SA2029/2SA933AS.
32MHZ
2sa1576
2SA20
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SE012
Abstract: SE090 SE140N SE115N diode 2SC5487 sta474a 8050e SE110N SLA-7611
Text: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)
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2SA1186
2SA1215
2SA1216
2SA1262
2SA1294
2SA1295
2SA1303
2SA1386
2SA1386A
2SA1488
SE012
SE090
SE140N
SE115N
diode
2SC5487
sta474a
8050e
SE110N
SLA-7611
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Varistor RU
Abstract: SE110N transistor 2SC5487 2SA2003 SE090N high voltage transistor SE090 RBV-406 2SC5586
Text: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)
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2SA1186
2SA1215
2SA1216
2SA1262
2SA1294
2SA1295
2SA1303
2SA1386
2SA1386A
2SA1488
Varistor RU
SE110N
transistor
2SC5487
2SA2003
SE090N
high voltage transistor
SE090
RBV-406
2SC5586
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2SC5586
Abstract: transistor 2SC5586 diode RU 3AM 2SA2003 microwave oven diode single phase bridge rectifier IC with output 1A 2SC5487 RG-2A Diode Dual MOSFET 606 TFD312S-F
Text: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)
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2SA1186
2SA1215
2SA1216
2SA1262
2SA1294
2SA1295
2SA1303
2SA1386
2SA1386A
2SA1488
2SC5586
transistor 2SC5586
diode RU 3AM
2SA2003
microwave oven diode
single phase bridge rectifier IC with output 1A
2SC5487
RG-2A Diode
Dual MOSFET 606
TFD312S-F
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vmt3
Abstract: No abstract text available
Text: General Purpose Transistor −50V, −0.15A 2SA1037AK / 2SA1576A / 2SA1774 / 2SA2029 Dimensions (Unit : mm) 2SA1576A 2.0 1.3 0.9 (1) (2) (3) 0.3 (2) 0.95 0.95 1.9 2.9 (3) 0.65 0.65 Structure Epitaxial planar type. PNP silicon transistor 0.7 (1) 2SA1037AK
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2SA1037AK
2SA1576A
2SA1774
2SA2029
2SC2412K
2SC4081
2SC4617
2SC5658.
2SA1037AK
2SA1576A
vmt3
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A3020
Abstract: 2SC2412K 2SA933A 100MHZ 2SA1576 2sa933as
Text: 2SC2412K NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR * Feature: 1 Low Cob. Cob=2.0pF (2) Complements the 2SA1037AK/2SA1576/ 1. 2SA1774/2SA1774H/2SA2029/2SA933AS. 1.BASE 2.EMITTER 3.COLLECTOR 2.4 1.3 Symbol Rating Unit Collector-Emitter Voltage
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2SC2412K
2SA1037AK/2SA1576/
2SA1774/2SA1774H/2SA2029/2SA933AS.
A3020
2SC2412K
2SA933A
100MHZ
2SA1576
2sa933as
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2SA1585
Abstract: 2SA1585S 2SB1424 2SC4115S 2SD2150 SC-72 T100
Text: 2SB1424 / 2SA1585S Transistors Low VCE sat Transistor (−20V, −3A) 2SB1424 / 2SA1585S zExternal dimensions (Unit : mm) 2SB1424 2SA1585S 4±0.2 1.0±0.2 (1) zStructure Epitaxial planar type PNP silicon transistor 0.4±0.1 1.5±0.1 (2) (3) 0.5±0.1 0.4+0.1
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2SB1424
2SA1585S
2SB1424
SC-62
15Min.
2SD2150
2SC4115S.
2SA1585
2SA1585S
2SC4115S
SC-72
T100
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Untitled
Abstract: No abstract text available
Text: 2SB1424 / 2SA1585S Transistors Low VCE sat Transistor (−20V, −3A) 2SB1424 / 2SA1585S zExternal dimensions (Unit : mm) 2SB1424 2SA1585S 4±0.2 1.0±0.2 (1) zStructure Epitaxial planar type PNP silicon transistor 0.4±0.1 1.5±0.1 (2) (3) 0.5±0.1 0.4+0.1
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2SB1424
2SA1585S
2SD2150
2SC4115S.
2SB1424
15Min.
SC-62
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TRANSISTOR BL 100
Abstract: transistor marking LG sot-323 Marking LG 2SC4116W transistor marking code lg LY SOT323 SOT 23 LY transistor marking c rank Y 2SA1586 ly transistor
Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SC4116W FEATURES z Excellent hFE linearity. z High voltage and current. z Complementary to 2SA1586. z Small package. Pb Lead-free APPLICATIONS z SOT-323 NPN Silicon Epitaxial Planar Transistor.
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2SC4116W
2SA1586.
OT-323
BL/SSSTF038
TRANSISTOR BL 100
transistor marking LG
sot-323 Marking LG
2SC4116W
transistor marking code lg
LY SOT323
SOT 23 LY
transistor marking c rank Y
2SA1586
ly transistor
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2SA1505
Abstract: 2sa150
Text: ST 2SA1505 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups, O and Y, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.
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2SA1505
100mA
400mA
100mA,
2SA1505
2sa150
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2SA1505
Abstract: No abstract text available
Text: ST 2SA1505 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups, O and Y, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.
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2SA1505
100mA
400mA
100mA,
2SA1505
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2SA1505
Abstract: No abstract text available
Text: ST 2SA1505 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups, O and Y, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.
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2SA1505
100mA
400mA
100mA,
2SA1505
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2sA1505
Abstract: No abstract text available
Text: ST 2SA1505 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups, O and Y, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.
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2SA1505
100mA
400mA
100mA,
2sA1505
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2SB1237
Abstract: TRansistor 2SB1237 data 2SA1515S 2SD1858 SC-72
Text: Medium Power Transistor 32V,1A 2SA1515S / 2SB1237 Dimensions (Unit : mm) 2.5 + − 0.2 6.8 + − 0.2 0.9 3Min. 3+ − 0.2 (15Min.) Structure Epitaxial planar type PNP silicon transistor 2SB1237 2+ − 0.2 0.45 +0.15 −0.05 2.5 +0.4 −0.1
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2SA1515S
2SB1237
15Min.
65Max.
2SA1515S
500mA
2SD1858
SC-72
R1010A
2SB1237
TRansistor 2SB1237 data
2SD1858
SC-72
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2SA1585
Abstract: No abstract text available
Text: ST 2SA1585 PNP Silicon Epitaxial Planar Transistor The transistor is subdivided into two groups, Q and R, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g
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2SA1585
2SA1585
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2SA1585
Abstract: transistor 2SA1585
Text: ST 2SA1585 PNP Silicon Epitaxial Planar Transistor The transistor is subdivided into two groups, Q and R, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g
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2SA1585
2SA1585
transistor 2SA1585
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2SA1530A
Abstract: 2SA1530
Text: 〈SMALL-SIGNAL TRANSISTOR〉 2SA1530A FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE Ultra super mini type DESCRIPTION OUTLINE DRAWING Unit：ｍｍ 2SA1530A is a super mini package resin sealed silicon PNP epitaxial transistor, It is designed for low frequency voltage application.
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2SA1530A
2SA1530A
-100mAIB
-10mA
JEITASC-59
2SA1530
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2SA1585E
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03A Plastic-Encapsulate Transistors C 2SA1585E WBFBP-03A TRANSISTOR 1.6x1.6×0.5 unit: mm DESCRIPTION PNP Epitaxial planar type Silicon Transistor TOP B E C 1. BASE FEATURES Low VCE(sat).VCE(sat) = -0.2V (Typ.)(IC/IB =-2A/-0.1A)
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WBFBP-03A
2SA1585E
WBFBP-03A
2SA1585E
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2sa1530
Abstract: 2sc3928
Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SA1530 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA1530 is a super mini resin sealed silicon PNP epitaxial type OUTLINE DRAWING Unitmm „+0.5 transistor. It is designed for low frequency voltage amplify application.
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2SA1530
2SA1530
2SC3928.
-30mA
2sc3928
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