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    TRANSISTOR 2N4400 Search Results

    TRANSISTOR 2N4400 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2N4400 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2N4400 / 2N4401 NPN Epitaxial Silicon Transistor General purpose transistor Collector Emitter Voltage: VCEO = 40V Collector Dissipation: PC max = 625mW On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package


    Original     		PDF 2N4400 2N4401 625mW 150mA 500mA 100MHz 100MHz, 150mA,

    2n4401

    Abstract: 2N4400 st2n4401
    Text: ST 2N4400 / 2N4401 NPN Epitaxial Silicon Transistor General purpose transistor Collector Emitter Voltage: VCEO = 40V Collector Dissipation: PC max = 625mW On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package


    Original     		PDF 2N4400 2N4401 625mW 100MHz 100MHz, 150mA, 2n4401 st2n4401

    st2n4401

    Abstract: 2N4401 2N4400 ic CD4081 pin diagram datasheet 2n4401 s
    Text: ST 2N4400 / 2N4401 NPN Epitaxial Silicon Transistor General purpose transistor Collector Emitter Voltage: VCEO = 40V Collector Dissipation: PC max = 625mW On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package


    Original     		PDF 2N4400 2N4401 625mW 100MHz 100MHz, 150mA, st2n4401 2N4401 ic CD4081 pin diagram datasheet 2n4401 s

    2N4401

    Abstract: 2N4400 2N4400 2N4401 st2n4401 2N4401 - TRANSISTOR transistor 2n4401 equivalent ST 024 NPN transistor 2n4400
    Text: ST 2N4400 / 2N4401 NPN Epitaxial Silicon Transistor General purpose transistor Collector Emitter Voltage: VCEO = 40 V Collector Dissipation: PC max = 625 mW On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package


    Original     		PDF 2N4400 2N4401 Sino-N4400 2N4400 2N4401 2N4400 2N4401 st2n4401 2N4401 - TRANSISTOR transistor 2n4401 equivalent ST 024 NPN transistor 2n4400

    2N4401

    Abstract: 2N4400 Transistor 2N4401 st2n4401 transistor 2n4401 equivalent 2N4400 2N4401 2n4401 data sheet 2N4401 TO-92 2N4400 datasheet transistor equivalents for 2n4401
    Text: ST 2N4400 / 2N4401 NPN Epitaxial Silicon Transistor General purpose transistor Collector Emitter Voltage: VCEO = 40 V Collector Dissipation: PC max = 625 mW On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package


    Original     		PDF 2N4400 2N4401 Semte2N4401 2N4400 2N4401 Transistor 2N4401 st2n4401 transistor 2n4401 equivalent 2N4400 2N4401 2n4401 data sheet 2N4401 TO-92 2N4400 datasheet transistor equivalents for 2n4401

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2N4400 TRANSISTOR NPN 1. EMITTER FEATURES z General Purpose Amplifier Transistor 2. BASE 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol


    Original     		PDF 2N4400 150mA 500mA 150mA 500mA 100MHz

    TRANSISTORS BJT bc548

    Abstract: jfet selection guide J210 D2 PAK PN4302 TN2102A BJT BC546 FJN965 MPF102 JFET data sheet KSP13 ks3302
    Text: Small Signal Transistor and JFET Selection Guide Small Signal Transistor and JFET Selection Guide Analog Discrete Interface & Logic Optoelectronics August 2002 Across the board. Around the world. Small Signal Transistor and JFET Selection Guide August 2002


    Original     		PDF OT-623F OT-323 OT-23 OT-89 OT-223 O-92S O-226AE O-92L TRANSISTORS BJT bc548 jfet selection guide J210 D2 PAK PN4302 TN2102A BJT BC546 FJN965 MPF102 JFET data sheet KSP13 ks3302

    2N4400

    Abstract: No abstract text available
    Text: 2N4400 0.6 A, 60 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  General Purpose Amplifier Transistor TO-92 G  Emitter  Base  Collector H J A D


    Original     		PDF 2N4400 150mA 500mA 150mA, 500mA, 100MHz 29-Dec-2010 2N4400

    2N4401

    Abstract: 2N4400 2N4401 2N4400 transistor 2N4401 2N4400 datasheet vce 1v 2n4401 transistor NPN transistor 2n4400
    Text: 2N4400/4401 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR TO-92 • Collector-Emitter Voltage: VCEO= 40V • Collector Dissipation: PC max =625mW ) ABSOLUTE MAXIMUM RATINGS (TA=25 Characteristic Symbol VCBO VCEO VEBO IC PC TJ T STG Collector-Base Voltage


    Original     		PDF 2N4400/4401 625mW 500mA Width30s, 150mA, 500mA, 100MHz 2N4401 2N4400 2N4401 2N4400 transistor 2N4401 2N4400 datasheet vce 1v 2n4401 transistor NPN transistor 2n4400

    2N4401 NPN Switching Transistor

    Abstract: 2N4400 2N4401 2n4401 amplifier 2N4401 transistor 100MHZ NPN TRANSISTORS NPN transistor 2n4400
    Text: Small Signal General Purpose Transistors NPN 2N4400/2N4401 Small Signal General Purpose Transistors (NPN) Features • NPN Silicon Epitaxial Transistor for Switching and Amplifier Applications Mechanical Data Case: Terminals: Weight: TO-92 TO-92, Plastic Package


    Original     		PDF 2N4400/2N4401 MIL-STD-202G, 2N4401 2N4400 2N4401 NPN Switching Transistor 2N4400 2N4401 2n4401 amplifier 2N4401 transistor 100MHZ NPN TRANSISTORS NPN transistor 2n4400

    2N4400

    Abstract: 2n4401 amplifier 2N4401 transistor 2N4400 2N4401 NPN transistor 2n4400 2N4401
    Text: Small Signal General Purpose Transistors NPN 2N4400/2N4401 Small Signal General Purpose Transistors (NPN) Features • NPN Silicon Epitaxial Transistor for Switching and Amplifier Applications • RoHS Compliance TO-92 Mechanical Data Case: TO-92, Plastic Package


    Original     		PDF 2N4400/2N4401 MIL-STD-202G, 2N4400 2N4401 2n4401 amplifier 2N4401 transistor 2N4400 2N4401 NPN transistor 2n4400

    2n4401

    Abstract: TRANSISTOR 2N 4401 "cb it" 4400 transistor transistor 4400
    Text: 2N4400/4401 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • Collector-Emitter Voltage: Veto=40V • Collector Dissipation: pc max =625mW TO -92 ABSOLUTE MAXIMUM RATINGS (T,=25°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage


    OCR Scan     		PDF 2N4400/4401 625mW 2N4401 lc50mA, 500mA, 100MHz --100MHz 150mA TRANSISTOR 2N 4401 "cb it" 4400 transistor transistor 4400

    TRANSISTOR 2N 4401

    Abstract: 2n4401
    Text: 2N4400/4401 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • Collector-Emitter Voltage: V c eo = 4 0 V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage


    OCR Scan     		PDF 2N4400/4401 625mW 100MHz 100MHz TRANSISTOR 2N 4401 2n4401

    2n4401

    Abstract: 2N4400 2N4401 2N4400 NV25
    Text: 2N4400/4401 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR TO-92 • Collector-Em ltter Voltage: V Ceo ” 40V • Collector Dissipation: Pe max *625mW ABSOLUTE MAXIMUM RATINGS nV»25*C) C haracteristic Collector-Base Voltage Collector-Em itter Voltage


    OCR Scan     		PDF 2N4400/4401 625mW 2N4401 2N4400 100MHz 100MHz 2N4400 2N4401 NV25

    2N4401

    Abstract: 2N4400 2N4401 transistor 2N4401 - TRANSISTOR
    Text: 2N4400/4401 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • Collector-Emitter Voltage: V c eo = 4 0 V * Collector Dissipation: P c max =625mW TO -92 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage Collector-Em itter Voltage


    OCR Scan     		PDF 2N4400/4401 625mW 100MA, 002S0H6 2N4401 2N4400 2N4401 transistor 2N4401 - TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: 2N4400 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • Collector-Emitter Voltage: V Ce o = 4 0 V • Collector Dissipation: Pc max =625mW TO -92 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Rating Unit VcBO VcEO 60 40 6 600 625


    OCR Scan     		PDF 2N4400 625mW 500mA, 150mA, 100KHz 100MHz 150mA

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


    OCR Scan     		PDF

    2N4400

    Abstract: MPS3705 ic hp samsung transistor D 586
    Text: {SAMSUNG SEMICON DUC TO R INC MPS3705 14E D | 7 ^ 4 1 4 5 00Q731fc, 7 | NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • Collector-Emitter Voltage: Vceo=30V • Collector Dissipation: Pc m ax =625m W ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic


    OCR Scan     		PDF 000731b MPS3705 625mW -55M50' 2N4400 T-29-21 100/iA, 50tnA, 100mA, ic hp samsung transistor D 586

    2n4401

    Abstract: No abstract text available
    Text: 2N4401 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • Collector-Emitter Voltage: V CEo = 40V • Collector Dissipation: Pc m ax =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Sym bol Rating Unit VcBO 60 40 6 600 625 150 -5 5 -1 5 0


    OCR Scan     		PDF 2N4401 625mW 2N4400 500mA, 150mA, lc-500m 100KHz 100MHz 2n4401

    transistor D 587

    Abstract: 2N4400 MPS3706
    Text: SAMS UN G SEMICONDUCTOR INC MPS3706 14E D 1 7 ^ 4 1 4 0 0007317 | NPN EPITAXIAL SILICON TRANSISTOR T -2 9 -2 1 GENERAL PURPOSE TRANSISTOR • Collector-Emltter Voltage: Veto= 20V • Collector Dissipation:'Pc max =625mW TO-92 ABSOLUTE MAXIMUM RATINGS (Ta-25°C )


    OCR Scan     		PDF 00Q7317 MPS3706 625mW 2N4400 T-29-21 100/iAteristic 100/iA, 100mA, 20MHz transistor D 587

    LG color tv Circuit Diagram schematics

    Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF 3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    1N6227

    Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: S AM SU N G SEMICONDUCTOR INC MPS3706 IME D | 7^4142 00G7317 1 | NPN EPITAXIAL SILICON TRANSISTOR T -2 9 -2 1 GENERAL PURPOSE TRANSISTOR • Collector-Em ltter Voltage: Veto= 20V • C ollector Dissipation:'Pc max =625mW TO-92 ABSOLUTE MAXIMUM R ATING S (Ta=25°C)


    OCR Scan     		PDF 00G7317 MPS3706 625mW 2N4400