MMBT5401
Abstract: MMBT5401-AE3-R MMBT5401L MMBT5401L-AE3-R
Text: UNISONIC TECHNOLOGIES CO., MMBT5401 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES 2 *Collector-Emitter Voltage: VCEO=-150V *Collector Dissipation: Pc max =350mW *High current gain 1 MARKING 3 2L SOT-23 *Pb-free plating product number:MMBT5401L
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MMBT5401
-150V
350mW
OT-23
MMBT5401L
MMBT5401-AE3-R
MMBT5401L-AE3-R
QW-R206-011
MMBT5401
MMBT5401L
MMBT5401L-AE3-R
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J162
Abstract: transistor j162 SATCOM ASAT35L
Text: ASAT35L NPN RF POWER TRANSISTOR DESCRIPTION: The ASAT35L is a Common Base Transistor Designed for L-Band Satcom Amplifier Applications. PACKAGE STYLE 400 2L FLG FEATURES INCLUDE: • Input/Output Matching Networks • Gold Metallization • Emitter Ballasting
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ASAT35L
ASAT35L
J162
transistor j162
SATCOM
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MSC80278
Abstract: No abstract text available
Text: MSC80278 NPN RF TRANSISTOR DESCRIPTION: The ASI MSC80278 is a Silicon NPN Microwave Transistor Supplied in a Common Emitter Package, Designed for linear Applications. PACKAGE 250 2L FLG FEATURES: • • • Emitter Ballasted Gold Metallization Hermetically sealed Package
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MSC80278
MSC80278
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MSC80183
Abstract: MSC85623
Text: MSC80183 NPN RF TRANSISTOR DESCRIPTION: The ASI MSC80183 is a Silicon NPN Microwave Transistor Supplied in a Common Base Package, Designed for Amplifier/Oscillator Applications up to 2.3 GHz. PACKAGE 230 2L FLG FEATURES: • • Hermetically Sealed Package
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MSC80183
MSC80183
MSC85623
MSC85623
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2L smd transistor
Abstract: CMBT5401 TRANSISTOR SMD MARKING 2l smd 2l
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBT5401 SILICON P–N–P HIGH–VOLTAGE TRANSISTOR P–N–P transistor Marking CMBT5401 = 2L PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration
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ISO/TS16949
OT-23
CMBT5401
C-120
2L smd transistor
CMBT5401
TRANSISTOR SMD MARKING 2l
smd 2l
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MSC80213
Abstract: MSC85623
Text: MSC80213 NPN RF TRANSISTOR DESCRIPTION: The ASI MSC80213 is a Silicon NPN Microwave Transistor Supplied in a Common Base Package, Designed for general purpose Applications up to 2.3 GHz. PACKAGE 230 2L FLG FEATURES: • • Hermetically Sealed Package Gold Metallization
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MSC80213
MSC80213
MSC85623
MSC85623
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SOT333
Abstract: SOT423 sot468 thermal compound wps II TO metal package aluminum kovar SOT439 Transistor Packages sot262 SOT443 rf transistor smd pages
Text: Philips Semiconductors RF transmitting transistor and power amplifier fundamentals 4 RF and microwave transistor packages RF AND MICROWAVE TRANSISTOR PACKAGES handbook, halfpage The packages of electronic devices are, in general, designed to: metal cap – Protect the electronics from mechanical damage
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2L smd transistor
Abstract: TRANSISTOR SMD MARKING 2l smd transistor 2l CMBT5401
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5401 SILICON P–N–P HIGH–VOLTAGE TRANSISTOR P–N–P transistor Marking CMBT5401 = 2L PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm
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OT-23
CMBT5401
C-120
2L smd transistor
TRANSISTOR SMD MARKING 2l
smd transistor 2l
CMBT5401
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AM1011-075
Abstract: No abstract text available
Text: AM1011-075 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI AM1011-075 is a high power Class C transistor designed for L-Band Avionics pulse output and driver applications. PACKAGE STYLE .400 2L FLG A 2xB I • Internal Input/Output Matching Networks
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AM1011-075
AM1011-075
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world transistor
Abstract: JAPAN transistor World transistors
Text: Renesas Technology Improves Transistor Performance with New Low-cost Fabrication Technology for 45-nanometer Process Generation and Beyond Redesigned p-type transistor with two-layer metal gate and n-type transistor with polysilicon gate achieve world top-level drive performance
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45-nanometer
953billion
FY2006
world transistor
JAPAN transistor
World transistors
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MRF182
Abstract: transistor MRF182 1202 transistor 3004 fet 945 TRANSISTOR
Text: MRF182 RF POWER FET TRANSISTOR DESCRIPTION: The ASI MRF182 is an RF power field effect transistor, N-Channel Enhancement-Mode lateral MOSFET. PACKAGE STYLE .350 2L FLG FEATURES INCLUDE: • Bradband performance from HF to 1 GHz • Omnigold Metalization System
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MRF182
MRF182
transistor MRF182
1202 transistor
3004 fet
945 TRANSISTOR
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high frequency transistor
Abstract: S21C2
Text: OSC-0.3CP NPN SILICON HIGH FREQUENCY TRANSISTOR PACKAGE STYLE .138 2L PILL DESCRIPTION: The OSC-0.3CP is a High Frequency Transistor designed for C Band Oscillator Applications. 0.095 0.105 0.023 0.027 FEATURES: • POUT = 320 mW Typ. at 7.5 GHz • Gold Metalization
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ASI10819
S21C2
high frequency transistor
S21C2
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2L smd transistor
Abstract: MARKING SMD pnp TRANSISTOR ec smd transistor 2l TRANSISTOR SMD MARKING 2l ts 4141 TRANSISTOR smd CMBT5401 2L smd Device marking 160
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5401 SILICON P–N–P HIGH–VOLTAGE TRANSISTOR P–N–P transistor Marking CMBT5401 = 2L Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR
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OT-23
CMBT5401
C-120
2L smd transistor
MARKING SMD pnp TRANSISTOR ec
smd transistor 2l
TRANSISTOR SMD MARKING 2l
ts 4141 TRANSISTOR smd
CMBT5401
2L smd
Device marking 160
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AM0912-150
Abstract: JTIDS 2L TRANSISTOR "RF Power Transistor"
Text: AM0912-150 RF POWER TRANSISTOR PACKAGE - .400 X .500 2L FLG DESCRIPTION: The ASI AM0912-150 is a Common Base Transistor Designed for TCAS and JTIDS Pulse Power Amplifier Applications. FEATURES INCLUDE: • Gold Metallization • Hermetic Package • Input/Output Matching
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AM0912-150
AM0912-150
JTIDS
2L TRANSISTOR
"RF Power Transistor"
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AVF600
Abstract: ASI10576
Text: AVF600 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 2L FLG A The ASI AVF600 is a high power pulsed transistor, designed for JFF avionics applications. It is designed for operation under short pulse width & low cycle and capable of withstanding 25:1 load
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AVF600
AVF600
00W/1090
ASI10576
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2SC2951
Abstract: high frequency transistor
Text: 2SC2951 NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION: The ASI 2SC2951 is a High Frequency Transistor Designed for General Purpose Oscillator Applications up to 10 GHz. PACKAGE STYLE .200 2L FLG FEATURES: • POSC = 630 mW Typical at 7.5 GHz • Omnigold Metallization System
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2SC2951
2SC2951
high frequency transistor
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MSC81600M
Abstract: transistor 1803 MSC81600
Text: MSC81600M NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 2L FLG A The ASI MSC81600M is a high power pulsed transistor, designed for IFF avionics applications. It is designed for operation under short pulse width & low cycle and capable of withstanding 25:1 load
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MSC81600M
MSC81600M
00W/1090
transistor 1803
MSC81600
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CD2397
Abstract: cd2397 Transistor 2L TRANSISTOR "RF Power Transistor"
Text: CD2397 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CD2397 is a common base NPN Bipolar Microwave Transistor. It is designed for Pulse Applications within the 960 to 1215 MHz Avionics frequency range. PACKAGE STYLE .230 2L FLG FEATURES: • Common Base Pulse at 43V
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CD2397
CD2397
cd2397 Transistor
2L TRANSISTOR
"RF Power Transistor"
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AM81214-015
Abstract: transistor j6
Text: AM81214-015 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .250 2L FLG DESCRIPTION: The ASI AM81214-015 is an NPN silicon bipolar transistor designed for L-Band pulsed radar applications. It utilizes internal matching and gold metalization for high reliability and good VSWR capability.
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AM81214-015
AM81214-015
transistor j6
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MSC85623
Abstract: No abstract text available
Text: MSC85623 NPN RF TRANSISTOR DESCRIPTION: The ASI MSC85623 is a Silicon NPN Microwave Transistor Supplied in a Common Base Package, Designed for RF Amplifier and Oscillator Applications up to 3.0 GHz. PACKAGE 230 2L FLG MAXIMUM RATINGS IC 150 mA VCEO 14 V VCB
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MSC85623
MSC85623
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motorola transistor ignition
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU323AP NPN Silicon Darlington Power Transistor The BU323AP is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications. DARLINGTON NPN SILICON POWER TRANSISTOR
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BU323AP
340D-01
motorola transistor ignition
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la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
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Untitled
Abstract: No abstract text available
Text: CMBT5401 SILICON P-N -P HIGH-VOLTAGE TRANSISTOR P-N -P transistor Marking CMBT5401 = 2L PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 0.14 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 1 .1 5 0.9Ö~^ ABSOLUTE MAXIMUM RATINGS Collector-base voltage open emitter
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CMBT5401
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2sc4571
Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR 2SC4571 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4571 is a low supply voltage transistor designed for UHF Units: mm OSC/MIX. 2.1 ±0.1 It is suitable for a high density surface mount assembly since the
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2SC4571
2SC4571
SC-70)
2SC4571-T1
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