Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR 2A K Search Results

    TRANSISTOR 2A K Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2A K Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MP6X2 Transistors Medium Power Transistor 32V, 2A MP6X2 zDimensions (Unit : mm) zApplication Low frequency amplifier MPT6 zFeatures 1) Low VCE(sat), VCE(sat) = 0.5V(Typ.) (IC / IB = 2A / 0.2A) 2) Contain two 2SD1766-dies in a package. zStructure NPN silicon epitaxial planar transistor


    Original
    PDF 2SD1766-dies

    Untitled

    Abstract: No abstract text available
    Text: MP6X2 Transistors Medium Power Transistor 32V, 2A MP6X2 zDimensions (Unit : mm) zApplication Low frequency amplifier MPT6 zFeatures 1) Low VCE(sat), VCE(sat) = 0.5V(Typ.) (IC / IB = 2A / 0.2A) 2) Contain two 2SD1766-dies in a package. zStructure NPN silicon epitaxial planar transistor


    Original
    PDF 2SD1766-dies

    2SB974

    Abstract: 2SD1308 transistor 2A k transistor 2A pnp 2SD130
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE = 2000 Min @ IC= -2A ·Low Collector-Emitter Saturation Voltage: VCE(sat) = -1.5V(Max)@ IC= -2A ·Complement to Type 2SD1308


    Original
    PDF 2SD1308 -100V, 2SB974 2SD1308 transistor 2A k transistor 2A pnp 2SD130

    Untitled

    Abstract: No abstract text available
    Text: OBSOLETE - PLEASE USE ZXTC4591AMC ZXTD4591AM832 MPPS Miniature Package Power Solutions Complementary dual 40V high performance transistor Summary NPN Transistor - VCEO = 40V; RSAT = 195m⍀; IC = 2.5A PNP Transistor - VCEO = -40V; RSAT = 350m⍀; IC = -2A


    Original
    PDF ZXTC4591AMC ZXTD4591AM832 D-81541

    Untitled

    Abstract: No abstract text available
    Text: CM2593 2A Step Down VOLTAGE REGULATOR GENERAL DESCRIPTION FEATURES The CM2593 is a monolithic integrated circuit that provide all the active functions for a step-down switching regulator, capable of driving a 2A load without additional transistor component. Requiring a


    Original
    PDF CM2593 CM2593

    2SA2093

    Abstract: 2SC5880 c5880 60V transistor npn 2a switching applications
    Text: 2SC5880 Transistors Power transistor 60V, 2A 2SC5880 zDimensions (Unit : mm) zFeatures 1) High speed switching. (tf : Typ. : 35ns at IC = 2A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 1.0A, IB = 100mA) 3) Strong discharge power for inductive load and


    Original
    PDF 2SC5880 200mV 100mA) 2SA2093 C5880 2SA2093 2SC5880 c5880 60V transistor npn 2a switching applications

    Untitled

    Abstract: No abstract text available
    Text: CM2593 2A Step Down VOLTAGE REGULATOR GENERAL DESCRIPTION FEATURES The CM2593 is a monolithic integrated circuit that provide all the active functions for a step-down switching regulator, capable of driving a 2A load without additional transistor component. Requiring a


    Original
    PDF CM2593 CM2593

    2DB1188P

    Abstract: P23Q
    Text: 2DB1188P/Q/R 32V PNP MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > -32V  Case: SOT89   IC = -2A high Continuous Current Low saturation voltage VCE sat < 800mV @ 2A  Case material: Molded Plastic, "Green" Molding Compound.


    Original
    PDF 2DB1188P/Q/R 800mV 2DD1766 AEC-Q101 J-STD-020 MIL-STD-202, DS31144 2DB1188P P23Q

    Untitled

    Abstract: No abstract text available
    Text: MP6Z2 Transistors Medium Power Transistor 32V, 2A MP6Z2 zApplications Low frequency amplifier zDimensions (Unit : mm) MPT6 zFeatures 1) Low VCE(sat) VCE(sat) = 0.5V(Typ.) (IC / IB = 2A / 0.2A) 2) Contains 2SD1766-die and 2SB1188-die in a package. (6) (5)


    Original
    PDF 2SD1766-die 2SB1188-die

    Untitled

    Abstract: No abstract text available
    Text: MP6Z2 Transistors Medium Power Transistor 32V, 2A MP6Z2 zApplications Low frequency amplifier zDimensions (Unit : mm) MPT6 zFeatures 1) Low VCE(sat) VCE(sat) = 0.5V(Typ.) (IC /IB = 2A / 0.2A) 2) Contains 2SD1766-die and 2SB1188-die in a package. (6) (5)


    Original
    PDF 2SD1766-die 2SB1188-die

    APL5330

    Abstract: 27BSC APL5330KAE-TR APL5330KE-TR STD-020C TRANSISTOR HANDLING 2A step down Voltage Regulator sop8 2a
    Text: APL5330 Dual Input 2A Low Dropout Regulator Features General Description • • The APL5330 integrates a power transistor to provide Fast Transient Response regulated voltage with maximum output current of 2A. High Output Accuracy It also incorporates current-limit, thermal shutdown and


    Original
    PDF APL5330 APL5330 27BSC APL5330KAE-TR APL5330KE-TR STD-020C TRANSISTOR HANDLING 2A step down Voltage Regulator sop8 2a

    24v 2A regulator

    Abstract: 5 lead TO-263 1N5824 SM8312 12v to 3.7v converter 2a
    Text: SM8312 SAMHOP Microelectronics Corp. 150KHz, 2A PWM Buck Switching Regulator General Description The SM8312 is a monolithic integrated circuit that provide all the active functions for a step-down switching regulator, capable of driving a 2A load without additional transistor component. Requiring


    Original
    PDF SM8312 150KHz, SM8312 O263-5L 24v 2A regulator 5 lead TO-263 1N5824 12v to 3.7v converter 2a

    ZETEX complementary transistor PRODUCT LINE

    Abstract: No abstract text available
    Text: NOT RECOMMENDED FOR NEW DESIGNS PLEASE USE ZXTC4591AMC ZXTD4591AM832 MPPS Miniature Package Power Solutions Complementary dual 40V high performance transistor Summary NPN Transistor - VCEO = 40V; RSAT = 195m⍀; IC = 2.5A PNP Transistor - VCEO = -40V; RSAT = 350m⍀; IC = -2A


    Original
    PDF ZXTC4591AMC ZXTD4591AM832 D-81541 ZETEX complementary transistor PRODUCT LINE

    transistor 2A k

    Abstract: 2SB1430 PNP 100V 2A
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -100V(Min) ·High DC Current Gain: hFE= 2000(Min)@ (VCE= -2V, IC= -2A) ·Low Collector Saturation Voltage: VCE(sat)= -1.5V(Max)@ (IC= -2A, IB= -2mA)


    Original
    PDF -100V -100V; transistor 2A k 2SB1430 PNP 100V 2A

    KST3906

    Abstract: WH*s
    Text: KST3906 PNP Epitaxial Silicon Transistor Features • General Purpose Transistor 3 Marking 2A 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol VCBO VCEO VEBO IC PC TSTG Ta = 25°C unless otherwise noted Parameter Collector-Base Voltage


    Original
    PDF KST3906 OT-23 KST3906 WH*s

    Untitled

    Abstract: No abstract text available
    Text: KST3906 PNP Epitaxial Silicon Transistor Features • General Purpose Transistor 3 Marking 2A 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol VCBO VCEO VEBO IC PC TSTG Ta = 25°C unless otherwise noted Parameter Collector-Base Voltage


    Original
    PDF KST3906 OT-23

    pnp npn dual emitter connected

    Abstract: ZETEX complementary transistor PRODUCT LINE design ideas MARKING 91A NPN MARKING 91A NPN transistor Surface mount NPN/PNP complementary transistor MLP832 TS16949 ZXTD4591AM832 ZXTD4591AM832TA
    Text: ZXTD4591AM832 MPPS Miniature Package Power Solutions Complementary dual 40V high performance transistor Summary NPN Transistor - VCEO = 40V; RSAT = 195m⍀; IC = 2.5A PNP Transistor - VCEO = -40V; RSAT = 350m⍀; IC = -2A Description Packaged in the 3mm x 2mm MLP Micro Leaded


    Original
    PDF ZXTD4591AM832 D-81541 pnp npn dual emitter connected ZETEX complementary transistor PRODUCT LINE design ideas MARKING 91A NPN MARKING 91A NPN transistor Surface mount NPN/PNP complementary transistor MLP832 TS16949 ZXTD4591AM832 ZXTD4591AM832TA

    MLP832

    Abstract: ZXTD4591AM832 ZXTD4591AM832TA ZXTD4591AM832TC marking 91a
    Text: ZXTD4591AM832 MPPS Miniature Package Power Solutions COMPLEMENTARY DUAL 40V HIGH PERFORMANCE TRANSISTOR SUMMARY NPN Transistor PNP Transistor VCEO = 40V; RSAT = 195m ; C = 2.5A VCEO = -40V; RSAT = 350m ; C = -2A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP Micro Leaded Package ,


    Original
    PDF ZXTD4591AM832 MLP832 ZXTD4591AM832 ZXTD4591AM832TA ZXTD4591AM832TC marking 91a

    IN5817 schottky diode symbol

    Abstract: 1N5817 595D IN5817 MA737 TC120 TC120303EHA TC120333EHA TC120503EHA equivalent components for transistor 2N2222
    Text: TC120 PWM/PFM Step-Down Combination Regulator/Controller Package Type Features • Internal Switching Transistor Supports 600mA Output Current • External Switching Transistor Control for Output Currents of 2A+ • 300kHz Oscillator Frequency Supports Small


    Original
    PDF TC120 600mA 300kHz TC120503EHA TC120 system420 D-81739 DS21365B-page IN5817 schottky diode symbol 1N5817 595D IN5817 MA737 TC120303EHA TC120333EHA TC120503EHA equivalent components for transistor 2N2222

    marking sop-12

    Abstract: 2N2222 TRANSISTOR TOSHIBA
    Text: TC120 PWM/PFM Step-Down Combination Regulator/Controller Package Type Features • Internal Switching Transistor Supports 600mA Output Current • External Switching Transistor Control for Output Currents of 2A+ • 300kHz Oscillator Frequency Supports Small


    Original
    PDF TC120 600mA 300kHz TC120 combinatio778-366 DS21365C-page marking sop-12 2N2222 TRANSISTOR TOSHIBA

    on 4409

    Abstract: EN4409 transistor on 4409 2SA1830 2SC4734
    Text: Ordering number:EN4409 2SA1830 : PNPEpitaxial Planar Silicon Transistor 2SC4734 ; NPN Triple Diffused Planar Silicon Transistor 2SA1830/2SC4734 High-Voltage Driver Applications Features Package Dimensions • Large current capacity IC=2A . · High breakdown voltage (VCEO≥400V).


    Original
    PDF EN4409 2SA1830 2SC4734 2SA1830/2SC4734 VCEO400V) 2SA1830/2SC4734 2SA1830/2SC4734] on 4409 EN4409 transistor on 4409 2SA1830 2SC4734

    OP7100

    Abstract: on 4409 ENN4409 transistor on 4409 2SA1830 2SC4734
    Text: Ordering number:ENN4409 2SA1830 : PNP Epitaxial Planar Silicon Transistor 2SC4734 : NPN Triple Diffused Planar Silicon Transistor 2SA1830/2SC4734 High-Voltage Driver Applications Features Package Dimensions • Large current capacity IC=2A . · High breakdown voltage (VCEO≥400V).


    Original
    PDF ENN4409 2SA1830 2SC4734 2SA1830/2SC4734 VCEO400V) 2SA1830/2SC4734 2084B 2SA1830/2SC4734] OP7100 on 4409 ENN4409 transistor on 4409 2SA1830 2SC4734

    OP7100

    Abstract: transistor on 4409 2SA1830 2SC4734
    Text: Ordering number:ENN4409 2SA1830 : PNP Epitaxial Planar Silicon Transistor 2SC4734 : NPN Triple Diffused Planar Silicon Transistor 2SA1830/2SC4734 High-Voltage Driver Applications Features Package Dimensions • Large current capacity IC=2A . · High breakdown voltage (VCEO≥400V).


    Original
    PDF ENN4409 2SA1830 2SC4734 2SA1830/2SC4734 VCEO400V) 2SA1830/2SC4734 2084B 2SA1830/2SC4734] OP7100 transistor on 4409 2SA1830 2SC4734

    ZTX449

    Abstract: No abstract text available
    Text: PNP Silicon Planar Medium Power Transistor ZTX549 FEATURES • 1W power dissipation at Tsmb = 2 5 °C • 2A peak pulse current • Excellent gain characteristics up to 2A pulsed • Low saturation voltages • Fast switching • NPN complementary type available


    OCR Scan
    PDF ZTX549 ZTX449 300/is. ZTX449