2SC3679
Abstract: No abstract text available
Text: 2SC3679 Silicon NPN Triple Diffused Planar Transistor High Voltage Switching Transistor 5(Pulse10) A µA 800min V hFE VCE=4V, IC=2A 10 to 30 19.9±0.3 IC VEB=7V IC=10mA 2.5 A VCE(sat) IC=2A, IB=0.4A 0.5max PC 100(Tc=25°C) W VBE(sat) IC=2A, IB=0.4A 1.2max
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2SC3679
Pulse10)
100max
800min
75typ
700mA
MT-100
2SC3679
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2SC4300
Abstract: No abstract text available
Text: 2SC4300 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 800min V 5(Pulse10) A hFE VCE=4V, IC=2A 10 to 30 IB 2.5 A VCE(sat) IC=2A, IB=0.4A 0.5max PC 75(Tc=25°C) W VBE(sat) IC=2A, IB=0.4A
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2SC4300
100max
800min
Pulse10)
75typ
FM100
2SC4300
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2SC3679
Abstract: No abstract text available
Text: 2SC3679 Silicon NPN Triple Diffused Planar Transistor High Voltage Switching Transistor IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 800min V 5(Pulse10) A hFE VCE=4V, IC=2A 10 to 30 2.5 A VCE(sat) IC=2A, IB=0.4A 0.5max PC 100(Tc=25°C) W VBE(sat) IC=2A, IB=0.4A
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2SC3679
Pulse10)
100max
800min
75typ
MT-100
2SC3679
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2SC4300
Abstract: No abstract text available
Text: 2SC4300 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 800min V 5(Pulse10) A hFE VCE=4V, IC=2A 10 to 30 IB 2.5 A VCE(sat) IC=2A, IB=0.4A 0.5max PC 75(Tc=25°C) W VBE(sat) IC=2A, IB=0.4A
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2SC4300
100max
800min
Pulse10)
75typ
700mA
FM100
2SC4300
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CEP02N6
Abstract: CEF02N6 transistor cep02n6 CEB02N6 CEI02N6
Text: CEP02N6/CEB02N6 CEI02N6/CEF02N6 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEP02N6 600V 5Ω 2A 10V CEB02N6 600V 5Ω 2A 10V CEI02N6 600V 5Ω 2A 10V CEF02N6 600V 5Ω 2A e 10V D Super high dense cell design for extremely low RDS(ON).
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CEP02N6/CEB02N6
CEI02N6/CEF02N6
CEP02N6
CEB02N6
CEI02N6
CEF02N6
O-220
O-263
O-262
O-220F
CEP02N6
CEF02N6
transistor cep02n6
CEB02N6
CEI02N6
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CEF02N6
Abstract: transistor cep02n6 CEP02N6 CEB02N6 CEI02N6
Text: CEP02N6/CEB02N6 CEI02N6/CEF02N6 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEP02N6 600V 5Ω 2A 10V CEB02N6 600V 5Ω 2A 10V CEI02N6 600V 5Ω 2A 10V CEF02N6 600V 5Ω 2A e 10V D Super high dense cell design for extremely low RDS(ON).
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CEP02N6/CEB02N6
CEI02N6/CEF02N6
CEP02N6
CEB02N6
CEI02N6
CEF02N6
O-220
O-263
O-262
O-220F
CEF02N6
transistor cep02n6
CEP02N6
CEB02N6
CEI02N6
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cef02n7g
Abstract: CEF02N7 cef*02N7
Text: CEP02N7G/CEB02N7G CEF02N7G N-Channel Enhancement Mode Field Effect Transistor FEATURES VDSS RDS ON ID @VGS CEP02N7G Type 700V 6.75Ω 2A 10V CEB02N7G 700V 6.75Ω 2A 10V CEF02N7G 700V 6.75Ω 2A d 10V D Super high dense cell design for extremely low RDS(ON).
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CEP02N7G/CEB02N7G
CEF02N7G
CEP02N7G
CEB02N7G
O-263
O-220
O-220F
O-220/263
cef02n7g
CEF02N7
cef*02N7
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CEF02N6G
Abstract: CEB02N6G
Text: CEP02N6G/CEB02N6G CEF02N6G N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEP02N6G 600V 5.5Ω 2A 10V CEB02N6G 600V 5.5Ω 2A 10V CEF02N6G 600V 5.5Ω 2A d 10V D Super high dense cell design for extremely low RDS(ON).
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CEP02N6G/CEB02N6G
CEF02N6G
CEP02N6G
CEB02N6G
O-263
O-220
O-220F
O-220/263
100ms
CEF02N6G
CEB02N6G
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CEF02N65D
Abstract: CEF02N65 cef*02n65d CEP02N65D CEP02N6 CEF02N6 CEB02N65D CEB02N6 692AD CEP02
Text: CEP02N65D/CEB02N65D CEF02N65D PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEP02N65D 650V 6.9Ω 2A 10V CEB02N65D 650V 6.9Ω 2A 10V CEF02N65D 650V 6.9Ω 2A d 10V D Super high dense cell design for extremely low RDS(ON).
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CEP02N65D/CEB02N65D
CEF02N65D
CEP02N65D
CEB02N65D
O-263
O-220
O-220F
O-220/263
CEF02N65D
CEF02N65
cef*02n65d
CEP02N65D
CEP02N6
CEF02N6
CEB02N65D
CEB02N6
692AD
CEP02
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Untitled
Abstract: No abstract text available
Text: MP6X2 Transistors Medium Power Transistor 32V, 2A MP6X2 zDimensions (Unit : mm) zApplication Low frequency amplifier MPT6 zFeatures 1) Low VCE(sat), VCE(sat) = 0.5V(Typ.) (IC / IB = 2A / 0.2A) 2) Contain two 2SD1766-dies in a package. zStructure NPN silicon epitaxial planar transistor
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2SD1766-dies
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Untitled
Abstract: No abstract text available
Text: MP6X2 Transistors Medium Power Transistor 32V, 2A MP6X2 zDimensions (Unit : mm) zApplication Low frequency amplifier MPT6 zFeatures 1) Low VCE(sat), VCE(sat) = 0.5V(Typ.) (IC / IB = 2A / 0.2A) 2) Contain two 2SD1766-dies in a package. zStructure NPN silicon epitaxial planar transistor
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2SD1766-dies
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vbe 12v, vce 600v NPN Transistor
Abstract: No abstract text available
Text: 2SC4907 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor mA VEB=10V 100max µA IC=25mA 500min V VCEO 500 V IEBO VEBO 10 V V(BR)CEO 6(Pulse12) A hFE VCE=4V, IC=2A 10to30 IB 2 A VCE(sat) IC=2A, IB=0.4A 0.5max PC
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2SC4907
Pulse12)
O220F)
100max
500min
10to30
45typ
vbe 12v, vce 600v NPN Transistor
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2SC5866
Abstract: 2SA2094
Text: 2SC5866 Transistor Medium power transistor 60V, 2A 2SC5866 !External dimensions (Units : mm) 2.8 1.6 0.4 (1) (3) 1.9 (1)Base (2)Emitter (3)Collector 0.3 0.6 1.0MAX 0.85 Each lead has same dimensions 0.1 0.7 0.16 (2) 0.95 0.95 TSMT3 2.9 !Features 1) High speed switching. (Tf : Typ. : 35ns at IC = 2A)
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2SC5866
200mV
2SA2094
2SC5866
2SA2094
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2SB974
Abstract: 2SD1308 transistor 2A k transistor 2A pnp 2SD130
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE = 2000 Min @ IC= -2A ·Low Collector-Emitter Saturation Voltage: VCE(sat) = -1.5V(Max)@ IC= -2A ·Complement to Type 2SD1308
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2SD1308
-100V,
2SB974
2SD1308
transistor 2A k
transistor 2A pnp
2SD130
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2SC5866
Abstract: 2SA20 2SA2094
Text: 2SC5866 Transistor Medium power transistor 60V, 2A 2SC5866 zExternal dimensions (Units : mm) 2.8 1.6 0.4 (1) (3) 1.9 (1)Base (2)Emitter (3)Collector 0.3 0.6 1.0MAX 0.85 Each lead has same dimensions 0.1 0.7 0.16 (2) 0.95 0.95 TSMT3 2.9 zFeatures 1) High speed switching. (Tf : Typ. : 35ns at IC = 2A)
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2SC5866
200mV
2SA2094
2SC5866
2SA20
2SA2094
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2SA2113
Abstract: 2SC5916
Text: 2SC5916 Transistor Medium power transistor 30V, 2A 2SC5916 !External dimensions (Units : mm) TSMT3 0.4 (1) (3) 1.9 0.3 0.6 1.0MAX 0.85 Each lead has same dimensions 0.1 (1) Base (2) Emitter (3) Collector 0.7 0.16 (2) 0.95 0.95 2.8 1.6 2.9 !Features 1) High speed switching. (Tf : Typ. : 20ns at IC = 2A)
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2SC5916
200mV
2SA2113
2SA2113
2SC5916
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2SA2113
Abstract: 2SC5916
Text: 2SC5916 Transistor Medium power transistor 30V, 2A 2SC5916 !External dimensions (Units : mm) TSMT3 0.4 (1) (3) 1.9 0.3 0.6 1.0MAX 0.85 Each lead has same dimensions 0.1 (1) Base (2) Emitter (3) Collector 0.7 0.16 (2) 0.95 0.95 2.8 1.6 2.9 !Features 1) High speed switching. (Tf : Typ. : 20ns at IC = 2A)
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2SC5916
200mV
2SA2113
2SA2113
2SC5916
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transistor 2A pnp
Abstract: 2SB880 2SD1190 transistor 2A
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE = 2000 Min @ IC= -2A ·Wide Area of Safe Operation ·Low Collector-Emitter Saturation Voltage: VCE(sat) = -1.5V(Max)@ IC= -2A
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2SD1190
transistor 2A pnp
2SB880
2SD1190
transistor 2A
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2SC4907
Abstract: FM20 vbe 12v, vce 600v NPN Transistor
Text: 2SC4907 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor VCEO 500 V IEBO VEBO 10 V V(BR)CEO 6(Pulse12) A hFE VCE=4V, IC=2A 10to30 Unit 1max mA VEB=10V 100max µA IC=25mA 500min V VCB=600V IB 2 A VCE(sat) IC=2A, IB=0.4A
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2SC4907
Pulse12)
10to30
100max
500min
45typ
O220F)
2SC4907
FM20
vbe 12v, vce 600v NPN Transistor
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marking FZT705
Abstract: No abstract text available
Text: Not Recommended for New Design Please Use FZT705 SOT223 PNP SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FZT704 ISSUE 2 - SEPTEMBER 1995 FEATURES * 2A CONTINUOUS CURRENT * FAST SWITCHING * GUARANTEED hFE SPECIFIED UP TO 2A COMPLEMENTARY TYPE FZT 604
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FZT705
OT223
FZT704
FZT704
100ms
marking FZT705
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Untitled
Abstract: No abstract text available
Text: OBSOLETE - PLEASE USE ZXTC4591AMC ZXTD4591AM832 MPPS Miniature Package Power Solutions Complementary dual 40V high performance transistor Summary NPN Transistor - VCEO = 40V; RSAT = 195m⍀; IC = 2.5A PNP Transistor - VCEO = -40V; RSAT = 350m⍀; IC = -2A
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ZXTC4591AMC
ZXTD4591AM832
D-81541
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Marking Losa
Abstract: FZT705 marking FZT705
Text: SOT223 PNP SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FZT705 ISSUE 2 - OCTOBER 1995 - FEATURES * 2A CONTINUOUS CURRENT * FAST SWITCHING * GUARANTEED HFE SPECIFIED UP TO 2A COMPLEMENTARY TYPE FZT605 PART MARKING DETAIL - fc
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OCR Scan
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OT223
FZT605
FZT705
SYM10V
FZT705
FZT704
Marking Losa
marking FZT705
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l05a
Abstract: 6k SOT223 marking FZT705
Text: SOT223 PNP SILICON PLANAR MEDIUM POWER DARUNGTON TRANSISTOR ISSUE 2 - OCTOBER 1995 FEATURES * 2A CONTINUOUS CURRENT * * FAST SWITCHING GUARANTEED HFE SPECIFIED UP TO 2A COMPLEMENTARY TYPE - FZT605 PART MARKING DETAIL - FZT705 ABSOLUTE MAXIMUM RATINGS. PARAMETER
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OT223
FZT605
FZT705
-100mA
-10mA*
-100hA
-120V
FZT705
FZT704
55-c\
l05a
6k SOT223
marking FZT705
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transistor marking 2A H
Abstract: MARKING fzt transistor 3229 transistor C 3229
Text: SOT223 PNP SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FZT704 ISSUE 2 - SEPTEMBER 1995 FEATURES * 2A CONTINUOUS CURRENT * FAST SWITCHING * GUARANTEED HFE SPECIFIED UP TO 2A COMPLEMENTARY TYPE PART MARKING DETAIL - FZT604 FZT/04 ABSOLUTE MAXIMUM RATINGS.
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OT223
FZT604
FZT/04
FZT704
-100mA,
fi20M
FZT705
transistor marking 2A H
MARKING fzt
transistor 3229
transistor C 3229
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