Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR 2A 3V Search Results

    TRANSISTOR 2A 3V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2A 3V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MP6X2 Transistors Medium Power Transistor 32V, 2A MP6X2 zDimensions (Unit : mm) zApplication Low frequency amplifier MPT6 zFeatures 1) Low VCE(sat), VCE(sat) = 0.5V(Typ.) (IC / IB = 2A / 0.2A) 2) Contain two 2SD1766-dies in a package. zStructure NPN silicon epitaxial planar transistor


    Original     		PDF 2SD1766-dies

    Untitled

    Abstract: No abstract text available
    Text: MP6X2 Transistors Medium Power Transistor 32V, 2A MP6X2 zDimensions (Unit : mm) zApplication Low frequency amplifier MPT6 zFeatures 1) Low VCE(sat), VCE(sat) = 0.5V(Typ.) (IC / IB = 2A / 0.2A) 2) Contain two 2SD1766-dies in a package. zStructure NPN silicon epitaxial planar transistor


    Original     		PDF 2SD1766-dies

    2SC5866

    Abstract: 2SA2094
    Text: 2SC5866 Transistor Medium power transistor 60V, 2A 2SC5866 !External dimensions (Units : mm) 2.8 1.6 0.4 (1) (3) 1.9 (1)Base (2)Emitter (3)Collector 0.3 0.6 1.0MAX 0.85 Each lead has same dimensions 0.1 0.7 0.16 (2) 0.95 0.95 TSMT3 2.9 !Features 1) High speed switching. (Tf : Typ. : 35ns at IC = 2A)


    Original     		PDF 2SC5866 200mV 2SA2094 2SC5866 2SA2094

    2SC5866

    Abstract: No abstract text available
    Text: 2SC5866 Transistor Medium power transistor 60V, 2A 2SC5866 !External dimensions (Units : mm) 2.8 1.6 0.4 (1) (3) 1.9 (1)Base (2)Emitter (3)Collector 0.3 0.6 1.0MAX 0.85 Each lead has same dimensions 0.1 0.7 0.16 (2) 0.95 0.95 TSMT3 2.9 !Features 1) High speed switching. (Tf : Typ. : 35ns at IC = 2A)


    Original     		PDF 2SC5866 200mV 2SA2094 2SC5866

    2SC5866

    Abstract: 2SA20 2SA2094
    Text: 2SC5866 Transistor Medium power transistor 60V, 2A 2SC5866 zExternal dimensions (Units : mm) 2.8 1.6 0.4 (1) (3) 1.9 (1)Base (2)Emitter (3)Collector 0.3 0.6 1.0MAX 0.85 Each lead has same dimensions 0.1 0.7 0.16 (2) 0.95 0.95 TSMT3 2.9 zFeatures 1) High speed switching. (Tf : Typ. : 35ns at IC = 2A)


    Original     		PDF 2SC5866 200mV 2SA2094 2SC5866 2SA20 2SA2094

    2SA2113

    Abstract: 2SC5916
    Text: 2SC5916 Transistor Medium power transistor 30V, 2A 2SC5916 !External dimensions (Units : mm) TSMT3 0.4 (1) (3) 1.9 0.3 0.6 1.0MAX 0.85 Each lead has same dimensions 0.1 (1) Base (2) Emitter (3) Collector 0.7 0.16 (2) 0.95 0.95 2.8 1.6 2.9 !Features 1) High speed switching. (Tf : Typ. : 20ns at IC = 2A)


    Original     		PDF 2SC5916 200mV 2SA2113 2SA2113 2SC5916

    2SA2113

    Abstract: 2SC5916
    Text: 2SC5916 Transistor Medium power transistor 30V, 2A 2SC5916 !External dimensions (Units : mm) TSMT3 0.4 (1) (3) 1.9 0.3 0.6 1.0MAX 0.85 Each lead has same dimensions 0.1 (1) Base (2) Emitter (3) Collector 0.7 0.16 (2) 0.95 0.95 2.8 1.6 2.9 !Features 1) High speed switching. (Tf : Typ. : 20ns at IC = 2A)


    Original     		PDF 2SC5916 200mV 2SA2113 2SA2113 2SC5916

    Untitled

    Abstract: No abstract text available
    Text: CM2593 2A Step Down VOLTAGE REGULATOR GENERAL DESCRIPTION FEATURES The CM2593 is a monolithic integrated circuit that provide all the active functions for a step-down switching regulator, capable of driving a 2A load without additional transistor component. Requiring a


    Original     		PDF CM2593 CM2593

    2SA2093

    Abstract: 2SC5880 c5880 60V transistor npn 2a switching applications
    Text: 2SC5880 Transistors Power transistor 60V, 2A 2SC5880 zDimensions (Unit : mm) zFeatures 1) High speed switching. (tf : Typ. : 35ns at IC = 2A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 1.0A, IB = 100mA) 3) Strong discharge power for inductive load and


    Original     		PDF 2SC5880 200mV 100mA) 2SA2093 C5880 2SA2093 2SC5880 c5880 60V transistor npn 2a switching applications

    Untitled

    Abstract: No abstract text available
    Text: CM2593 2A Step Down VOLTAGE REGULATOR GENERAL DESCRIPTION FEATURES The CM2593 is a monolithic integrated circuit that provide all the active functions for a step-down switching regulator, capable of driving a 2A load without additional transistor component. Requiring a


    Original     		PDF CM2593 CM2593

    Untitled

    Abstract: No abstract text available
    Text: Power transistor 60V, 2A 2SC5880 Dimensions (Unit : mm) Features 1) High speed switching. (tf : Typ. : 35ns at IC = 2A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 1.0A, IB = 100mA) 3) Strong discharge power for inductive load and capacitance load.


    Original     		PDF 2SC5880 200mV 100mA) 2SA2093 C5880 R1120A

    2DB1188P

    Abstract: P23Q
    Text: 2DB1188P/Q/R 32V PNP MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > -32V  Case: SOT89   IC = -2A high Continuous Current Low saturation voltage VCE sat < 800mV @ 2A  Case material: Molded Plastic, "Green" Molding Compound.


    Original     		PDF 2DB1188P/Q/R 800mV 2DD1766 AEC-Q101 J-STD-020 MIL-STD-202, DS31144 2DB1188P P23Q

    Untitled

    Abstract: No abstract text available
    Text: MP6Z2 Transistors Medium Power Transistor 32V, 2A MP6Z2 zApplications Low frequency amplifier zDimensions (Unit : mm) MPT6 zFeatures 1) Low VCE(sat) VCE(sat) = 0.5V(Typ.) (IC / IB = 2A / 0.2A) 2) Contains 2SD1766-die and 2SB1188-die in a package. (6) (5)


    Original     		PDF 2SD1766-die 2SB1188-die

    Untitled

    Abstract: No abstract text available
    Text: MP6Z2 Transistors Medium Power Transistor 32V, 2A MP6Z2 zApplications Low frequency amplifier zDimensions (Unit : mm) MPT6 zFeatures 1) Low VCE(sat) VCE(sat) = 0.5V(Typ.) (IC /IB = 2A / 0.2A) 2) Contains 2SD1766-die and 2SB1188-die in a package. (6) (5)


    Original     		PDF 2SD1766-die 2SB1188-die

    C5875

    Abstract: 2SA20 2SA2087 2SC5875
    Text: 2SC5875 Transistors Power transistor 30V, 2A 2SC5875 !External dimensions (Unit : mm) !Features 1) High speed switching. (Tf : Typ. : 20ns at IC = 2A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 1.0A, IB = 0.1A) 3) Strong discharge power for inductive load and


    Original     		PDF 2SC5875 200mV 2SA2087 65Max. C5875 C5875 2SA20 2SA2087 2SC5875

    C5875

    Abstract: 2SA2087 2SC5875
    Text: 2SC5875 Transistors Power transistor 30V, 2A 2SC5875 !External dimensions (Unit : mm) !Features 1) High speed switching. (Tf : Typ. : 20ns at IC = 2A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 1.0A, IB = 0.1A) 3) Strong discharge power for inductive load and


    Original     		PDF 2SC5875 200mV 2SA2087 65Max. C5875 C5875 2SA2087 2SC5875

    2SA2093

    Abstract: 2SC5880
    Text: 2SC5880 Transistors Power transistor 60V, 2A 2SC5880 zExternal dimensions (Unit : mm) ATV 2.5 1.0 0.65Max. 0.5 4.4 0.9 6.8 14.5 zFeatures 1) High speed switching. (Tf : Typ. : 35ns at IC = 2A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 1.0A, IB = 100mA)


    Original     		PDF 2SC5880 65Max. 200mV 100mA) 2SA2093 C5880 2SA2093 2SC5880

    24v 2A regulator

    Abstract: 5 lead TO-263 1N5824 SM8312 12v to 3.7v converter 2a
    Text: SM8312 SAMHOP Microelectronics Corp. 150KHz, 2A PWM Buck Switching Regulator General Description The SM8312 is a monolithic integrated circuit that provide all the active functions for a step-down switching regulator, capable of driving a 2A load without additional transistor component. Requiring


    Original     		PDF SM8312 150KHz, SM8312 O263-5L 24v 2A regulator 5 lead TO-263 1N5824 12v to 3.7v converter 2a

    c5880

    Abstract: 2SA2093 2SC5880 2SA20
    Text: 2SC5880 Transistors Power transistor 60V, 2A 2SC5880 !External dimensions (Unit : mm) ATV 2.5 1.0 0.65Max. 0.5 4.4 0.9 6.8 14.5 !Features 1) High speed switching. (Tf : Typ. : 35ns at IC = 2A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 1.0A, IB = 100mA)


    Original     		PDF 2SC5880 65Max. 200mV 100mA) 2SA2093 C5880 c5880 2SA2093 2SC5880 2SA20

    Untitled

    Abstract: No abstract text available
    Text: 2SC5880 Transistors Power transistor 60V, 2A 2SC5880 !External dimensions (Unit : mm) ATV 2.5 1.0 0.65Max. 0.5 4.4 0.9 6.8 14.5 !Features 1) High speed switching. (Tf : Typ. : 35ns at IC = 2A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 1.0A, IB = 100mA)


    Original     		PDF 2SC5880 200mV 100mA) 2SA2093 65Max. C5880

    voltage regulator sot-89 3v

    Abstract: dcdc sot-89 FHD3205 FHD3205E FHD3205P FHD3205Q FHD3205R transistor marking 2a REGULATOR SOT89 30v high power amplifier sot89
    Text: SOT-89 EPITAXIAL SILICON Transistor FHD3205 FEATURES特征 •High current output up to 2A; ·Low saturation voltage; ·Complement to FHB1273; ·NPN EPITAXIAL SILICON TRANSISTOR. Applications应用 ·Audio power amplifier; ·DC-DC converter; ·Voltage regulator.


    Original     		PDF OT-89 FHD3205 FHB1273; FHD3205r 200mA voltage regulator sot-89 3v dcdc sot-89 FHD3205 FHD3205E FHD3205P FHD3205Q FHD3205R transistor marking 2a REGULATOR SOT89 30v high power amplifier sot89

    rfl2n06

    Abstract: AN7254 AN7260 RFL2N06L
    Text: RFL2N06L Data Sheet October 1999 2A, 60V, 0.950 Ohm, Logic Level, N-Channel Power MOSFET File Number Features • 2A, 50V and 60V The RFL2N06L N-channel enhancement mode silicon gate power field effect transistor is designed for applications such as switching regulators, switching converters, motor drivers,


    Original     		PDF RFL2N06L RFL2N06L TA952ingements rfl2n06 AN7254 AN7260

    WT2595M

    Abstract: WT2595M-ADJ WT2595M50 WT2595M12 WT2595M33
    Text: WEITRON 2A Step-down Voltage Regulator WT2595M Power Converter 150kHz P b Lead Pb -Free General Description: The WT2595M is a monolithic integrated circuit that provide all the active functions for a step-down switching regulator, capable of driving a 2A load without additional transistor component. Requiring


    Original     		PDF WT2595M 150kHz WT2595M 28-Sep-06 015x45 WT2595 28-Aug-06 WT2595M-ADJ WT2595M50 WT2595M12 WT2595M33

    AN7254

    Abstract: AN7260 RFP2N20L TB334
    Text: RFP2N20L Data Sheet January 2002 2A, 200V, 3.500 Ohm, Logic Level, N-Channel Power MOSFET Features • 2A, 200V The RFP2N20L N-Channel enhancement mode silicon gate power field effect transistor is specifically designed for use with logic level 5V driving sources in applications such as


    Original     		PDF RFP2N20L RFP2N20L AN7254 AN7260 TB334