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    TRANSISTOR 2A 238 Search Results

    TRANSISTOR 2A 238 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2A 238 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    npn transistors 400V 1A

    Abstract: NPN Transistor 1A 400V npn transistor 400V transistor Ic 1A datasheet NPN 400V switching transistor NPN Transistor transistor transistor 236 high voltage fast switching npn transistor NPN Transistor Characteristics
    Text: Transistors High Voltage Switching Transistor 400V, 2A 2SC3969 / 2SC5161 FFeatures 1) Low VCE(sat). VCE(sat) = 0.15V (Typ.) (IC / IB = 1A / 0.2A) 2) High breakdown voltage. VCEO = 400V 3) Fast switching. tr = 1.0µs (IC = 0.8A) FExternal dimensions (Units: mm)


    Original     		2SC3969 2SC5161 96-698-C14) npn transistors 400V 1A NPN Transistor 1A 400V npn transistor 400V transistor Ic 1A datasheet NPN 400V switching transistor NPN Transistor transistor transistor 236 high voltage fast switching npn transistor NPN Transistor Characteristics PDF

    TRANSISTOR D400

    Abstract: D400 npn transistor D400 transistor TRANSISTOR NPN D400 D400 npn transistor D302 2sd2166 high hfe transistor NPN transistor 2sd1863 Transistor PNP VCEO 400V
    Text: Transistors 2SA1807 2SA1862 96-102-A331 (96-109-A343) 307 Transistors 2SA1812 / 2SA1727 / 2SA1776 (96-609-A313) 320 Transistors 2SA1834 2SC5001 (96-106-B217) (96-193-D217) 292 Transistors 2SA1952 / 2SA1906 / 2SA1757 2SC5103 / 2SC4596 (96-603-A314) (96-199-C314)


    Original     		2SA1807 2SA1862 96-102-A331) 96-109-A343) 2SA1812 2SA1727 2SA1776 96-609-A313) 2SA1834 2SC5001 TRANSISTOR D400 D400 npn transistor D400 transistor TRANSISTOR NPN D400 D400 npn transistor D302 2sd2166 high hfe transistor NPN transistor 2sd1863 Transistor PNP VCEO 400V PDF

    QM5HL-24

    Abstract: 2sk2850 transistor qm5hl 2SK2850 transistor pnp 600v. 1a. to 92 QM5HL24 MG20G6EL1 600V PNP pnp transistor 600V NPN Transistor 600V
    Text: Next W M.T O .C Semiconductors00-YDiscretes W 1 M.T . O W C W WW .100Y. M.T O W .C ZTX~Series Transistors .TW W product Detailed Ware available on: us. 100y. com. tw W 00Y specifications 1 M.T . M O W O C . .C WW .1Pol00YIc max Part No. Product No. Manufacturer


    Original     		10silicon ZTX653 3P/TO-92 NPN00Y ZTX689B ZTX690B NPN100Y AT-31033-TR1 QM5HL-24 2sk2850 transistor qm5hl 2SK2850 transistor pnp 600v. 1a. to 92 QM5HL24 MG20G6EL1 600V PNP pnp transistor 600V NPN Transistor 600V PDF

    IBJT

    Abstract: SCR Handbook, General electric AN9319 Rudy Severns 5 hp DC motor speed control using scr d50026 "General Electric SCR Manual" 6th AN918 MOTOROLA 14v 10A mosfet TA84-5
    Text: Harris Semiconductor No. AN9319 Harris Power September 1993 Parallel Operation Of Insulated Gate Transistors Author: Sebald R. Korn, Consulting Applications Engineer that the only part of the bipolar in parallel to the MOSFET and modulation resistance is the base-collector junction, but


    Original     		AN9319 IBJT SCR Handbook, General electric AN9319 Rudy Severns 5 hp DC motor speed control using scr d50026 "General Electric SCR Manual" 6th AN918 MOTOROLA 14v 10A mosfet TA84-5 PDF

    Endress Hauser D-79689 Maulburg

    Abstract: Endress fem 34 Endress Hauser ftm D-79689 Endress Hauser Hauser* ftm 230 79689 maulburg Hauser Endress Hauser ftm 260 Endress
    Text: Technical Information TI 238F/00/en Limit Switch soliphant T FTM 260 Cost-effective vibration limit switch for fine-grained solids Application Soliphant is a rugged level limit switch for use in silos containing fine-grained and powdery solids. Its design and


    Original     		238F/00/en D-79574 99/MTM 238F/00/en/07 Endress Hauser D-79689 Maulburg Endress fem 34 Endress Hauser ftm D-79689 Endress Hauser Hauser* ftm 230 79689 maulburg Hauser Endress Hauser ftm 260 Endress PDF

    IBJT

    Abstract: General Electric SCR Manual 6th edition AN9319 TA84-5 "General Electric SCR Manual" 6th Rudy Severns d50026 AN918 MOTOROLA Pelly 7402N
    Text: Parallel Operation Of Insulated Gate Transistors In the November issue of Powertechnics, the general considerations of paralleling semiconIn Application Note C + VBE IMOS RMOD g ITOT + VCE - - + VDS IBJT ITOT = IMOS + IBJT IBJT = βBJTIMOS VBE + IMOSRMOD = VDS


    Original     		AN9319 IBJT General Electric SCR Manual 6th edition AN9319 TA84-5 "General Electric SCR Manual" 6th Rudy Severns d50026 AN918 MOTOROLA Pelly 7402N PDF

    transistor bt 808

    Abstract: "General Electric SCR Manual" 6th BT thyristor 808 General Electric SCR Manual 6th edition IBJT General Electric SCR components Data Manual TA84-5 AN918 MOTOROLA Severns 7402N
    Text: Parallel Operation Of Insulated Gate Transistors Application Note bt raleran Of ued te antors utho eyrds ter- C IMOS rpoon, minctor, ache ergy ted, itch wer pes, wer itch - RMOD g + VBE ITOT + VCE - - + VDS IBJT ITOT = IMOS + IBJT IBJT = βBJTIMOS VBE + IMOSRMOD = VDS


    Original     		PDF

    IBJT

    Abstract: "General Electric SCR Manual" 6th 7512 low drop ic General Electric Semiconductor General Electric SCR Manual 6th edition Rudy Severns gto 5A 500V TA84-5 AN918 Paralleling Power MOSFETs in Switching Applications D50026
    Text: Parallel Operation Of Insulated Gate Transistors Application Note C IMOS RMOD g + VBE ITOT + VCE - - + VDS IBJT ITOT = IMOS + IBJT IBJT = βBJTIMOS VBE + IMOSRMOD = VDS e FIGURE 1. N-CHANNEL IGT TRANSISTOR STEADY STATE EQUIVALENT CIRCUIT To understand the unusual behavior of its temperature coefficient, negative at low current, almost zero at normal current,


    Original     		PDF

    Transistor 169k

    Abstract: No abstract text available
    Text: 11.2005 Battery Charger Solutions High Performance Analog ICs Linear Technology’s high performance battery charger ICs Each battery chemistry has unique battery-charging require- enable long battery life by providing precision charging ments. Selecting the correct battery charger increases the


    Original     		D-73230 I-20156 SE-164 BB110520K Transistor 169k PDF

    circuit diagram for 48v automatic battery charger

    Abstract: circuit diagram for 24V automatic battery charger High Current Voltage Regulator mosfet 7805 7805 12v to 5v 3a Lead Acid Battery Charger Switchmode 7805 12v to 5v 2a 7805 12v to 5v 1a LA 7805 NICD charger 18V datasheet 48V automatic charger
    Text: 02.2007 Battery Charger Solutions High Performance Analog ICs Linear Technology’s high performance battery charger ICs Each battery chemistry has unique battery-charging require- enable long battery life by providing precision charging ments. Selecting the correct battery charger increases the


    Original     		D-73230 I-20041 SE-164 BB0207OL circuit diagram for 48v automatic battery charger circuit diagram for 24V automatic battery charger High Current Voltage Regulator mosfet 7805 7805 12v to 5v 3a Lead Acid Battery Charger Switchmode 7805 12v to 5v 2a 7805 12v to 5v 1a LA 7805 NICD charger 18V datasheet 48V automatic charger PDF

    LTC4006

    Abstract: LT1512 LTC4060 LTC1759 DFN-16 LT1510 LT1513 LT1769 LTC4010 LTC4011
    Text: 02.2007 Battery Charger Solutions High Performance Analog ICs Linear Technology’s high performance battery charger ICs Each battery chemistry has unique battery-charging require- enable long battery life by providing precision charging ments. Selecting the correct battery charger increases the


    Original     		D-73230 I-20041 SE-164 BB0207OL LTC4006 LT1512 LTC4060 LTC1759 DFN-16 LT1510 LT1513 LT1769 LTC4010 LTC4011 PDF

    NTC 2.2K

    Abstract: LTC4054L DFN-16 LT1510 LT1512 LT1513 LT1769 LTC4010 LTC4011 LTC4060
    Text: 11.2005 Battery Charger Solutions High Performance Analog ICs Linear Technology’s high performance battery charger ICs Each battery chemistry has unique battery-charging require- enable long battery life by providing precision charging ments. Selecting the correct battery charger increases the


    Original     		batt593) D-73230 I-20156 SE-164 BB110520K NTC 2.2K LTC4054L DFN-16 LT1510 LT1512 LT1513 LT1769 LTC4010 LTC4011 LTC4060 PDF

    transistor Electronic ballast "INDUCTION LAMP"

    Abstract: schematic diagram Electronic Ballast HID Motorola, AN1049 MC14046 AN1049 EB407 5000 watts PURE SINE WAVE inverter schematic diagram induction lamp electronic ballast for fluorescent lighting t8 motorola BR480/D
    Text: MOTOROLA Order this document by AN1543/D SEMICONDUCTOR APPLICATION NOTE AN1543 Electronic Lamp Ballast Design Prepared by: Michaël Bairanzade Power Semiconductor Applications Engineer Motorola SPS Toulouse ABSTRACT With a continuous growth rate of 20% per year, electronic


    Original     		AN1543/D AN1543 AN1543/D* transistor Electronic ballast "INDUCTION LAMP" schematic diagram Electronic Ballast HID Motorola, AN1049 MC14046 AN1049 EB407 5000 watts PURE SINE WAVE inverter schematic diagram induction lamp electronic ballast for fluorescent lighting t8 motorola BR480/D PDF

    transistor Electronic ballast "INDUCTION LAMP"

    Abstract: schematic diagram Electronic Ballast HID AN1049 magnetic amplifier saturable core electronic ballast for fluorescent lighting t8 dimmable Fluorescent BALLAST an1543 Saturable Core Square Wave Oscillator induction lamp ballast schematic hid lamp ballast
    Text: AN1543/D Electronic Lamp Ballast Design Prepared by: Michaël Bairanzade Power Semiconductor Applications Engineer Motorola SPS Toulouse http://onsemi.com APPLICATION NOTE ABSTRACT c. Assure that the circuit will remain stable, even under fault conditions.


    Original     		AN1543/D r14525 transistor Electronic ballast "INDUCTION LAMP" schematic diagram Electronic Ballast HID AN1049 magnetic amplifier saturable core electronic ballast for fluorescent lighting t8 dimmable Fluorescent BALLAST an1543 Saturable Core Square Wave Oscillator induction lamp ballast schematic hid lamp ballast PDF

    transistor Electronic ballast "INDUCTION LAMP"

    Abstract: schematic diagram Electronic Ballast HID MC14046 vogt m4 MJE18605D2 schematic diagram of energy saving lamps 25 watts vogt toroid siemens 230 gas discharge tube induction lamp ballast an1543
    Text: AN1543/D Electronic Lamp Ballast Design Prepared by: Michaël Bairanzade http://onsemi.com APPLICATION NOTE ABSTRACT With a continuous growth rate of 20% per year, electronic lamp ballasts are widely spread over the world. Even though the light out of a fluorescent tube has a discontinuous


    Original     		AN1543/D transistor Electronic ballast "INDUCTION LAMP" schematic diagram Electronic Ballast HID MC14046 vogt m4 MJE18605D2 schematic diagram of energy saving lamps 25 watts vogt toroid siemens 230 gas discharge tube induction lamp ballast an1543 PDF

    Untitled

    Abstract: No abstract text available
    Text: TPC8016-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type High-Speed U-MOS III TPC8016-H High-Efficiency DC／DC Converter Applications Notebook PC Applications Unit: mm Portable-Equipment Applications • Small footprint due to small and thin package


    Original     		TPC8016-H PDF

    Untitled

    Abstract: No abstract text available
    Text: TPC8013-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type High-speed U-MOS III TPC8013-H High-Efficiency DC／DC Converter Applications Notebook PC Applications Unit: mm Portable-Equipment Applications • Small footprint due to a small and thin package


    Original     		TPC8013-H PDF

    Untitled

    Abstract: No abstract text available
    Text: TPC8016-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type High-Speed U-MOS III TPC8016-H High-Efficiency DC／DC Converter Applications Notebook PC Applications Unit: mm Portable-Equipment Applications • Small footprint due to small and thin package


    Original     		TPC8016-H PDF

    Untitled

    Abstract: No abstract text available
    Text: TPC8013-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type High-speed U-MOS III TPC8013-H High-Efficiency DC/DC Converter Applications Notebook PC Applications Unit: mm Portable-Equipment Applications • Small footprint due to a small and thin package


    Original     		TPC8013-H PDF

    EB 13007

    Abstract: p 13007 13007 T 13007 W 13007 TRANSISTOR E 13007 NPN Transistor 13007
    Text: KSE13006/13007 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH MODE APPLICATION TO-220 • High Speed Switching • Suitable for Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS Ta= 25°C Characteristic Collector Base Voltage : KSE13006 : KSE13007


    OCR Scan     		KSE13006/13007 O-220 KSE13006 KSE13007 30CVS, 7Tb4142 EB 13007 p 13007 13007 T 13007 W 13007 TRANSISTOR E 13007 NPN Transistor 13007 PDF

    Untitled

    Abstract: No abstract text available
    Text: L i r i Ç A E ï ï ! » TECHNOLOGY [_ow Dropout Regulator F€ ATU R € S The LT1185 uses a saturation-limited NPN transistor as the pass element. This device gives the linear dropout characteristics of an FET pass element with significantly


    OCR Scan     		LT1185 LT1185 1N4001 PDF

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


    OCR Scan     		PDF

    e239

    Abstract: No abstract text available
    Text: NPN SILICON TRANSISTOR KSC5029 HIGH VOLTAGE AND HIGH RELIABILITY H IG H S P E E D S W IT C H IN G W ID E S O A ABSOLUTE MAXIMUM RATINGS Characteristic Symbol C ollector-Base Voltage Rating Unit V cB O 1 100 Collector-Em itter Voltage Emitter-Base Voltage C ollector C urrent DC I


    OCR Scan     		KSC5029 e239 PDF

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 PDF