HMXR-5001
Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
Text: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog
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transistor k 2761
Abstract: C1225
Text: ISO 9001 Registered Process C1225 1.2µm BiCMOS Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage Poly Field Threshold Voltage
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C1225
65x65
C1225-4-98
transistor k 2761
C1225
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C1225
Abstract: c122-5
Text: ISO 9001 Registered Process C1225 1.2µm BiCMOS Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage Poly Field Threshold Voltage
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C1225
65x65
C1225
c122-5
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C1206
Abstract: No abstract text available
Text: ISO 9001 Registered Process C1206 BiCMOS 1.2µm 6.4GHz Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage Poly Field Threshold Voltage
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C1206
C1206
C1206-4-98
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C1206
Abstract: C1221 100x100um
Text: ISO 9001 Registered Process C1221 BiCMOS 1.2µm High Resistance Poly for Analog Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage
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C1221
C1221
C1221-4-98
C1206
100x100um
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C1206
Abstract: C1221
Text: ISO 9001 Registered Process C1221 BiCMOS 1.2µm High Resistance Poly for Analog Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage
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C1221
C1221
C1206
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transistor k 2761
Abstract: C1206 TRANSISTOR C1206
Text: ISO 9001 Registered Process C1206 BiCMOS 1.2µm 6.4GHz Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage Poly Field Threshold Voltage
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C1206
C1206
C1206-4-98
transistor k 2761
TRANSISTOR C1206
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27611 transistor
Abstract: transistor A 27611 transistor 27611 ENN2761A 2SC4222 ITR06529 ITR06530 ITR06531 ITR06532
Text: Ordering number:ENN2761A NPN Triple Diffused Planar Silicon Transistor 2SC4222 500V/5A Switching Regulator Applications Features Package Dimensions • High breakdown voltage, high reliability. · High-speed switching tf=0.1µs typ . · Wide ASO. · Adoption of MBIT process.
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ENN2761A
2SC4222
00V/5A
2049C
2SC4222]
O-220MF
27611 transistor
transistor A 27611
transistor 27611
ENN2761A
2SC4222
ITR06529
ITR06530
ITR06531
ITR06532
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transistor k 2761
Abstract: k 2761 transistor poly silicon resistor C1230 hfe 118 transistor 338 transistor A 2761 poly1 poly2 resistor C1206 cox 15um
Text: ISO 9001 Registered Process C1230 BiCMOS 1.2µm Low TCR P-Poly for Analog Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage
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C1230
C1230
transistor k 2761
k 2761 transistor
poly silicon resistor
hfe 118
transistor 338
transistor A 2761
poly1 poly2 resistor
C1206
cox 15um
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transistor k 2761
Abstract: C1230 C1206
Text: ISO 9001 Registered Process C1230 BiCMOS 1.2µm Low TCR P-Poly for Analog Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage
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C1230
C1230
C1230-4-98
transistor k 2761
C1206
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transistor A 27611
Abstract: 27611 transistor transistor 27611 EN2761A transistor 2SC4222 IC 27611 2SC4222 2761 l 2761 l catalog 27611
Text: Ordering number:EN2761A NPN Triple Diffused Planar Silicon Transistor 2SC4222 500V/5A Switching Regulator Applications Features Package Dimensions • High breakdown voltage, high reliability. · Fast switching speed tf=0.1µs typ . · Wide ASO. · Adoption of MBIT process.
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EN2761A
2SC4222
00V/5A
2049C
2SC4222]
O-220MF
transistor A 27611
27611 transistor
transistor 27611
EN2761A
transistor 2SC4222
IC 27611
2SC4222
2761 l
2761 l catalog
27611
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C1230
Abstract: transistor k 2761 poly silicon resistor k 2761 transistor k 351 transistor C1206
Text: ISO 9001 Registered Process C1230 BiCMOS 1.2µm Low TCR P-Poly for Analog Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage
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C1230
C1230
transistor k 2761
poly silicon resistor
k 2761 transistor
k 351 transistor
C1206
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mcr-s-10-50-ui-dci
Abstract: hall current transducer 5A MCR-S-10-50-UI-SW-DCI 2814728 24v relays phoenix sw dip-10 MCR-S10-50-UI-SW-DCI-NC TRANSISTOR SUBSTITUTION OUT04 MCR-S-10-50-UI-SW-DCI-NC
Text: MCR-S-…-DCI Current Transducer up to 55 A, Programmable and Configurable INTERFACE Data Sheet 1 PHOENIX CONTACT - 06/2006 Description MCR-S-…-DCI current transducers offer users the option of ordering a preconfigured device, configuring the device themselves via DIP switches or programming it with
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MCR-S-10-50-UI-DCI
hall current transducer 5A
MCR-S-10-50-UI-SW-DCI
2814728
24v relays phoenix
sw dip-10
MCR-S10-50-UI-SW-DCI-NC
TRANSISTOR SUBSTITUTION
OUT04
MCR-S-10-50-UI-SW-DCI-NC
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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2761 l transistor
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MUN5211DW1T1 SERIES Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network M otorola P referred D evices The BRT Bias Resistor Transistor contains a single transistor with a
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MUN5211DW1T1
T-363
MUN5215DW1T1
MUN5216DW1T1
2761 l transistor
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MRF5811
Abstract: ADC IC 0808
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor MRF5811LT1 Designed for high current low power am plifiers up 1o 1.0 GHz. IC = 200 mA LOW NOISE HIGH-FREQUENCY TRANSISTOR NPN SILICON • • Low Noise 2.0 dB @ 500 MHz
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MRF5811LT1
MRF5811LT1
MRF5811
ADC IC 0808
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capacitor tnr 471
Abstract: 15g390k TNR 471 15g821k SIEMENS LIGHTNING ARRESTORS 15G470K 15g470km ERZC14DK391 ERZ-C14DK390 TNR-15G470KM
Text: TYPE VSA VARISTORS TRANSIENT / SURGE ABSORBER APPLICATIONS FEATURES Transistor, diode, IC, thyristor and triac semiconductor protection. Surge protection in consumer electronics. Surge protection in industrial electronics. Surge protection in communication, measuring and
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610mm
capacitor tnr 471
15g390k
TNR 471
15g821k
SIEMENS LIGHTNING ARRESTORS
15G470K
15g470km
ERZC14DK391
ERZ-C14DK390
TNR-15G470KM
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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CB-F36c
2SD1642
2SD2182,
2SC4489,
-08S-
ksd 302 250v, 10a
irf 5630
transistor 2SB 367
IRF 3055
AC153Y
transistor ESM 2878
TIP 43c transistor
2sk116
bf199
bd643
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A5 GNE mosfet
Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA
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1PHX11136Q-14
A5 GNE mosfet
jo3501
2N4427 equivalent bfr91
2N503
2N5160 MOTOROLA
BF431
BFR96
HY 1906 transistor
jo2015
kd 2060 transistor
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transistor A 2761
Abstract: 2761 l transistor
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor Designed for 28 Volt microwave large-signal, common base, Class-C CW amplifier applications in the range 1600 - 1640 MHz. • Specified 28 Volt, 1.6 6H z Class-C Characteristics
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MRF16006
transistor A 2761
2761 l transistor
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logos 4012B
Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
Text: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX
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TDA1510
TDA1510A
logos 4012B
1LB553
Rauland ETS-003
Silec Semiconductors
MCP 7833
4057A
transistor sr52
74c912
1TK552
74S485
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2SC2742
Abstract: 2749 n2761
Text: - 5 - FOR U SE BY E LEC TR IC IA N S O VER SEA S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English
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500MHz,
7-C-25X)
V-25T!
Tc-25
2SC2742
2749
n2761
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phototransistor sensitive to green light
Abstract: photoelectric burglar alarm silicon solar cell phototransistor sensitive to yellow light photo resistor light APPLIED SOLAR ENERGY solar cell Solar sun sensor light sensitive burglar alarm project silicon photocell
Text: CADMIUM SULPHIDE PHOTOCIELL SILICON SOLAR CELL PHOTO TRANSISTOR DISPLAY AND OPTO ELECTRONIC D EVICES 276-116 CADMIUM SULPHIDE PHOTOCELL GENERAL DESCRIPTION A c a d m i u m s u l p h i d e p h o t o c o l l i s a l i ghl v a r i a b l e r e s i s t o r w h i c h i s m o s t
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