MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
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2SA2160
Abstract: 2SA2149 2SC6005 RQW200 rdx100n45 RQA200N03 rqw200n03 RLA130N03 rdx*100n45 2sc6027
Text: 2005 Transistor New Products Ver.1 MOS FET Series Low VCE sat Miniature Digital Transistor Series Low VCE(sat) Transistor Series Endured Discharge Voltage/ High Speed Switching/ Low Noise Transistor Series Muting Transistor Series MOS FET TUMT/TSMT Series
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O-220FM
47P4869E
2SA2160
2SA2149
2SC6005
RQW200
rdx100n45
RQA200N03
rqw200n03
RLA130N03
rdx*100n45
2sc6027
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transistor sc 308
Abstract: DTA143EE SMD310
Text: DTA143EE Product Preview Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 2 The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base
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DTA143EE
DTA143EE
416/SC
r14525
DTA143EE/D
transistor sc 308
SMD310
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FC155
Abstract: No abstract text available
Text: Ordering number:EN5063 FC155 PNP Epitaxial Planar Silicon Transistor With bias resistances PNP Epitaxail Planar Silicon Transistor Constant-Current Circuit Applications Features Package Dimensions • Complex type of 2 devices (transistor with resistances and low saturation transistor) contained in one
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EN5063
FC155
FC155]
FC155
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transistor sc 308
Abstract: DTC114TE SMD310
Text: DTC114TE Product Preview Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 2 The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base
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DTC114TE
DTC114TE
416/SC
r14525
DTC114TE/D
transistor sc 308
SMD310
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oz960
Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors
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KIA7900PI
TC7SH04FU
KIC7SH04FU
SC604*
KAC3301QN
M51943
KIA7042AP/AF
TC7SH08FU
KIC7SH08FU
LT1937
oz960
khb*9D5N20P
MB4213
KIA78*pI
MN1280
F10P048
KIA7812A
MJE13007
mb4213 equivalent
TRANSISTOR SMD N2 3j
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FC155
Abstract: No abstract text available
Text: Ordering number:EN5063 FC155 PNP Epitaxial Planar Silicon Transistor With bias resistances PNP Epitaxail Planar Silicon Transistor Constant-Current Circuit Applications Features Package Dimensions • Complex type of 2 devices (transistor with resistances and low saturation transistor) contained in one
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EN5063
FC155
FC155]
FC155
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PT 4304 a transistor
Abstract: 2SC3587 noise diode
Text: DATA SHEET SILICON TRANSISTOR 2SC3587 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3587 is an NPN epitaxial transistor designed for low- PACKAGE DIMENSIONS in mm noise amplification at 0.5 to 6.0 GHz. This transistor has low-noise
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2SC3587
2SC3587
PT 4304 a transistor
noise diode
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transistor sc 308
Abstract: DTC114YE SMD310
Text: ON Semiconductort DTC114YE Product Preview Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 2 1 The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base
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DTC114YE
DTC114YE
416/SC
r14525
DTC114YE/D
transistor sc 308
SMD310
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transistor sc 308
Abstract: DTA114YE SMD310
Text: ON Semiconductort DTA114YE Preliminary Data Sheet Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 2 1 The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base
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DTA114YE
DTA114YE
416/SC
r14525
DTA114YE/D
transistor sc 308
SMD310
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tip122 tip127 audio board
Abstract: BUK 450-1000 Transistor Selection Guide tip122 tip127 audio amp FJL6920 equivalent car amp TIP41/TIP42 kse13009 TRANSISTOR TIP31 FJL6920
Text: Bipolar Power Transistor Selection Guide Bipolar Power Transistor Selection Guide Analog Discrete Interface & Logic Optoelectronics January 2003 Across the board. Around the world. Bipolar Power Transistor Selection Guide January 2003 Table of Contents
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Power247TM,
tip122 tip127 audio board
BUK 450-1000
Transistor Selection Guide
tip122 tip127 audio amp
FJL6920 equivalent
car amp
TIP41/TIP42
kse13009
TRANSISTOR TIP31
FJL6920
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1N4001 transistor free
Abstract: BC337 figure 1N4001 BC337 BU323AP BU323P silicon diode 1N4001 specifications transistor BC337 transistor darlington npn
Text: ON Semiconductort BU323AP NPN Silicon Darlington Power Transistor DARLINGTON NPN SILICON POWER TRANSISTOR 400 VOLTS 125 WATTS The BU323AP is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications.
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BU323AP
BU323AP
r14525
BU323AP/D
1N4001 transistor free
BC337 figure
1N4001
BC337
BU323P
silicon diode 1N4001 specifications
transistor BC337
transistor darlington npn
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BFS17A NPN 3 GHz wideband transistor Product specification September1995 NXP Semiconductors Product specification NPN 3 GHz wideband transistor BFS17A DESCRIPTION NPN transistor in a plastic SOT23 package. 3 handbook, halfpage APPLICATIONS
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BFS17A
September1995
MSB003
R77/02/pp9
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BFS17A
Abstract: MSB003 E2p transistor
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFS17A NPN 3 GHz wideband transistor Product specification September1995 NXP Semiconductors Product specification NPN 3 GHz wideband transistor BFS17A DESCRIPTION NPN transistor in a plastic SOT23 package. 3 handbook, halfpage
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BFS17A
September1995
MSB003
R77/02/pp9
BFS17A
MSB003
E2p transistor
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BFS17A
Abstract: MSB003
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFS17A NPN 3 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September1995 Philips Semiconductors Product specification NPN 3 GHz wideband transistor BFS17A DESCRIPTION NPN transistor in a plastic SOT23 package.
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BFS17A
September1995
MSB003
BFS17A
MSB003
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65C6600
Abstract: ipa65r600c6 TRANSISTOR SMD MARKING CODE 2A IPx65R600C6 ID32 MOSFET TRANSISTOR SMD MARKING CODE 11 IPI65R600C6 infineon marking TO-252 IPD65R600C6 ipa65r
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V CoolMOS C6 Power Transistor IPx65R600C6 Data Sheet Rev. 2.0, 2010-08-19 Final Industrial & Multimarket 650V CoolMOS™ C6 Power Transistor 1 IPD65R600C6, IPI65R600C6 IPB65R600C6, IPP65R600C6
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IPx65R600C6
IPD65R600C6,
IPI65R600C6
IPB65R600C6,
IPP65R600C6
IPA65R600C6
65C6600
ipa65r600c6
TRANSISTOR SMD MARKING CODE 2A
IPx65R600C6
ID32
MOSFET TRANSISTOR SMD MARKING CODE 11
IPI65R600C6
infineon marking TO-252
IPD65R600C6
ipa65r
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waitrony
Abstract: WPDT-270 photo darlington sensor
Text: Photo Transistor Waitrony Module No.: WPDT-270 1. General Description: The WPDT-270 is a high output NPN photo darlington transistor mounted in a water clear end looking epoxy package. This small photo darlington transistor permits narrow angular response.
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WPDT-270
WPDT-270
PDT-270
waitrony
photo darlington sensor
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Untitled
Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR 2SC3587 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION PACKAGE DIMENSIONS in mm The 2SC 3587 is an NPN epitaxial transistor designed for lownoise am plification at 0.5 to 6.0 GHz. This transistor has low-noise
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2SC3587
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transistor NEC D 586
Abstract: nec a 634 NEC D 586 2SC3587 NEC K 2500 NEC 3500
Text: DATA SHEET SILICON TRANSISTOR 2SC3587 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3587 is an NPN epitaxial transistor designed for low- PACKAGE DIMENSIONS in mm noise am plification at 0.5 to 6.0 GHz. T his transistor has low-noise
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2SC3587
2SC3587
transistor NEC D 586
nec a 634
NEC D 586
NEC K 2500
NEC 3500
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la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
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MP-25
Abstract: NP40N06CLC NP40N06DLC NP40N06ELC TO-220SMD
Text: Preliminary Product Information MOS Field Effect Transistor NP40N06CLC,NP40N06DLC,NP40N06ELC N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION This product is N-channel MOS Field Effect Transistor designed for high voltage switching application.
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NP40N06CLC
NP40N06DLC
NP40N06ELC
175dgree
027QMAX.
1000pF
O-220AB
O-262AA
O-220SMD
MP-25
NP40N06ELC
TO-220SMD
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2SC5169
Abstract: low noise transistor table
Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC5169 DUAL TRANSISTOR FOR LOW NOISE DIFFERENTIAL AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SCS169 is a silicon NPN epitaxial type transistor. It Is designed for Unit:mm OUTLINE DRAWING
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2SC5169
2SCS169
100mVtyp
X10-3
2SC5169
low noise transistor table
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NEC IC D 553 C
Abstract: nec 2741 702 mini transistor
Text: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low PACKAGE DIMENSIONS in millimeters noise amplifier.
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2SC4226
2SC4226
SC-70
2SG4226-T1
NEC IC D 553 C
nec 2741
702 mini transistor
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2SA1928
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SA1928 DUAL TRANSISTOR FOR LOW NOISE DIFFERENTIAL AMPLIFY APPLICATION _ SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA1928 is a silicon PNP epitaxial type transistor. It is designed for low noise differential amplify application.
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2SA1928
2SA1928
-100V
270Hz
270Hz
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