TRANSISTOR 2688 Search Results

TRANSISTOR 2688 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR 2688 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
10160-001 Abstract: std motor G3202 00002EE0 g3425 Text: HIGH PERFORMANCE TRANSISTOR INVERTER TRUE TORQUE CONTROL DRIVE SERIES PROFIBUS-DP COMMUNICATIONS INTERFACE December, 1998 ICC #10160-001 Introduction Thank you for purchasing the “Profibus-DP Communications Interface” for the Toshiba TOSVERT-130 G3 High-Performance Transistor Inverter. Before using the	Original	OSVERT-130 10160-001 std motor G3202 00002EE0 g3425	PDF
tip122 tip127 audio amp schematic Abstract: mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier Text: DL111/D Rev. 8, July-2001 Bipolar Power Transistor Data Bipolar Power Transistor Data DL111/D Rev. 8, Jul–2001  SCILLC, 2001 Previous Edition  1995 “All Rights Reserved’’ Grafoil is a registered Trademark of Union Carbide. Kon–Dux and Rubber–Duc are trademarks of Aavid Thermal Technologies, Inc.	Original	DL111/D July-2001 r14525 tip122 tip127 audio amp schematic mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier	PDF
BD249C equivalent Abstract: 400 watts amplifier circuit diagram 10 amp npn power transistors 1000 watt amplifier AMP contact assembly TO-218 NPN 1.5 AMPS POWER TRANSISTOR pulse transformer 218 free transistor and ic equivalent data 500 watt power circuit diagram Text: BD249C NPN High−Power Transistor NPN high−power transistors are for general−purpose power amplifier and switching applications. Features • ESD Ratings: • • Machine Model, C; > 400 V Human Body Model, 3B; > 8000 V Epoxy Meets UL 94 V−0 @ 0.125	Original	BD249C BD249C/D BD249C equivalent 400 watts amplifier circuit diagram 10 amp npn power transistors 1000 watt amplifier AMP contact assembly TO-218 NPN 1.5 AMPS POWER TRANSISTOR pulse transformer 218 free transistor and ic equivalent data 500 watt power circuit diagram	PDF
bd249c equivalent Abstract: c2688 c2688 transistor tRANSISTOR c2688 BD249C Text: BD249C NPN High−Power Transistor . . . for general−purpose power amplifier and switching applications. • ESD Ratings: Machine Model, C; > 400 V • Human Body Model, 3B; > 8000 V Epoxy Meets UL 94, V−0 @ 1/8” http://onsemi.com 25 A, 100 V, 125 W	Original	BD249C O-218 BD249C MJE180 C-2688, bd249c equivalent c2688 c2688 transistor tRANSISTOR c2688	PDF
bd249c equivalent Abstract: No abstract text available Text: BD249C NPN High−Power Transistor . . . for general−purpose power amplifier and switching applications. • ESD Ratings: Machine Model, C; > 400 V • Human Body Model, 3B; > 8000 V Epoxy Meets UL 94, V−0 @ 1/8” http://onsemi.com 25 A, 100 V, 125 W	Original	BD249C O-218 BD249C/D bd249c equivalent	PDF
ATF-26884-STR Abstract: ATF-26884 ATF-26884-TR1 Text: 2 – 16 GHz General Purpose Gallium Arsenide FET Technical Data ATF-26884 Features • High Output Power: 18.0␣ dBm Typical P 1 dB at 12␣ GHz • High Gain: 9.0 dB Typical GSS at 12␣ GHz housed in a cost effective microstrip package. This device is	Original	ATF-26884 ATF-26884 ATF-26884-STR ATF-26884-TR1	PDF
Untitled Abstract: No abstract text available Text: 2 – 16 GHz General Purpose Gallium Arsenide FET Technical Data ATF-26884 Features • High Output Power: 18.0 dBm Typical P1 dB at 12 GHz • High Gain: 9.0 dB Typical GSS at 12 GHz housed in a cost effective microstrip package. This device is designed for use in oscillator	Original	ATF-26884 ATF-26884 Schottkybarrier-ga-165 5965-8703E	PDF
ATF-26884 Abstract: zo 103 ma ATF-26884-STR ATF-26884-TR1 Text: 2 – 16 GHz General Purpose Gallium Arsenide FET Technical Data ATF-26884 Features • High Output Power: 18.0 dBm Typical P1 dB at 12 GHz • High Gain: 9.0 dB Typical GSS at 12 GHz housed in a cost effective microstrip package. This device is designed for use in oscillator	Original	ATF-26884 ATF-26884 5965-8703E 5980-0024E zo 103 ma ATF-26884-STR ATF-26884-TR1	PDF
TO-253-AA Abstract: Small-outline integrated circuit SOT 143 transistor 143 46d1 308 transistor MDV 1-2 kv SOT-143 sot143 transistor transistor C 2240 Text: Open-Drain Microprocessor Supervisory Circuit in 4-Lead SOT-143 ADM6315 FEATURES FUNCTIONAL BLOCK DIAGRAM VCC GND VREF ADM6315 RESET RESET CIRCUITRY MR DEBOUNCE 00081-001 Specified over temperature Low power consumption 5 A typical Precision voltage monitor of voltages from 2.5 V to 5 V	Original	OT-143 ADM6315 ADM811 OT-143 D00081-0-9/07 TO-253-AA Small-outline integrated circuit SOT 143 transistor 143 46d1 308 transistor MDV 1-2 kv SOT-143 sot143 transistor transistor C 2240	PDF
ADM6315-31D4ARTZR7 Abstract: ADM6315-29D4ART-RL7 branding llv ADM6315-46D3ART transistor F 463 V/65e9 transistor Text: Data Sheet Open-Drain Microprocessor Supervisory Circuit in 4-Lead SOT-143 ADM6315 FEATURES FUNCTIONAL BLOCK DIAGRAM VCC GND VREF ADM6315 RESET RESET CIRCUITRY MR DEBOUNCE 00081-001 Specified over temperature Low power consumption 5 A typical Precision voltage monitor of voltages from 2.5 V to 5 V	Original	OT-143 ADM6315 ADM811 ADM6315 D00081-0-12/11 ADM6315-31D4ARTZR7 ADM6315-29D4ART-RL7 branding llv ADM6315-46D3ART transistor F 463 V/65e9 transistor	PDF
transistor TO Outline Dimensions Abstract: transistor d 140 g Text: Data Sheet Open-Drain Microprocessor Supervisory Circuit in 4-Lead SOT-143 ADM6315 FEATURES FUNCTIONAL BLOCK DIAGRAM VCC GND VREF ADM6315 RESET RESET CIRCUITRY MR DEBOUNCE 00081-001 Specified over temperature Low power consumption 5 A typical Precision voltage monitor of voltages from 2.5 V to 5 V	Original	OT-143 ADM6315 ADM811 ADM6315 D00081-0-9/13 transistor TO Outline Dimensions transistor d 140 g	PDF
la 4440 amplifier circuit diagram 300 watt Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492 Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode	OCR Scan	AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492	PDF
y51 h 120c Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK	OCR Scan	500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711	PDF
2689* transistor Abstract: MRF1035 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line M icrowave Pulse Power Transistor Designed for 10 25-1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode-S transmitters. • 70 W PEAK 1025-1150 MHz MICROWAVE POWER TRANSISTOR NPN SILICON	OCR Scan	MRF10500 MRF10350 376C00 MRF10070 2689* transistor MRF1035	PDF

Transistor 2SA 2SB 2SC 2SD Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59 Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle	OCR Scan		PDF
transistor d 2689 Abstract: KD221A10 kd221a1 d 2689 k0221 TRANSISTOR 2688 2689* transistor powerex kd22 Text: mNEREX POUEREX INC _ P ]> • 7ST4bEl GOÜElfil Powerex, Inc., M ills Street, Youngwood, Pennsylvania 1S697 412 925-7272 ■ O KD221A10 Tentative Fast Switching Dual Darlington Transistor Module 100 Amperes/125 Volts Description Powerex Fast Switching Dual Darlington	OCR Scan	KD221A10 Amperes/125 01AC-Ã KD221A10 transistor d 2689 kd221a1 d 2689 k0221 TRANSISTOR 2688 2689* transistor powerex kd22	PDF
A5 GNE mosfet Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA	OCR Scan	1PHX11136Q-14 A5 GNE mosfet jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor	PDF
Motorola transistors MRF 947 Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp Text: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that	OCR Scan	2PHX11136Q-17 Motorola transistors MRF 947 trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp	PDF
MHW721A2 Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503 Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA	OCR Scan	1PHX11136Q-14 MHW721A2 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503	PDF
C2688 Abstract: c2688 transistor 5257 transistor equivalent transistor TIP2955 br c2688 C-2688 c2688 L L72B tRANSISTOR c2688 TIP2955 Text: TEXAS INSTR {OPTO} 8961726 b5 TEXAS INSTR » F lfiT b lT S b D D 3b 3 62 C 3 6 9 9 8 OPTO TIP2955 P-N-P SILICON POWER TRANSISTOR JAN U ARY 1972 - REVISED OCTOBER 1984 • Designed for Complementary Use with TIP 3055 • 9 0 W at 2 5 ° C C a se Temperature	OCR Scan	TIP2955 TIP3055 t0-218aa 22eoi2 D0370D3 TIP2955 C2688 c2688 transistor 5257 transistor equivalent transistor TIP2955 br c2688 C-2688 c2688 L L72B tRANSISTOR c2688	PDF
TRANSISTOR 2688 Abstract: CE 2711 2SA1150 2SC2682 Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English	OCR Scan	TV25TÃ 2SA1150 TRANSISTOR 2688 CE 2711 2SC2682	PDF
ST Z0 103 MA Abstract: No abstract text available Text: What HEW LETT* mLliM PACKARD 2-1 6 GHz General Purpose Gallium Arsenide FET Technical Data ATF-26884 F e atu res • High Output Pow er: 18.0 dBm Typical Pi ¿s at 12 GHz • High Gain: 9.0 dB TypicalGssat 12 GHz • Low C ost P lastic Package • Tape-and-Reel Packaging	OCR Scan	ATF-26884 ATF-26884 ST Z0 103 MA	PDF
Untitled Abstract: No abstract text available Text: What mLftM HP AECWKLAERTDT 2 -16 GHz General Purpose Gallium Arsenide FET Technical Data ATF-26884 F e atu res • High Output Power: 18.0 dBm Typical Px dB at 12 GHz • High Gain: 9.0 dB Typical Gss at 12 GHz • Low Cost Plastic Package • Tape-and-Reel Packaging	OCR Scan	ATF-26884 ATF-26884 5965-8703E	PDF
ATF-26884 Abstract: No abstract text available Text: Whn1 H E W L E T T 1HEM PA C K A R D ATF-26884 2-16 GHz General Purpose Gallium Arsenide FET 84 Plastic Package Features • High Im a x : 60 GHz typical • High Output Power: 18.0 dBm typical Pi dB at 12 GHz • High Gain: 9.0 dB typical Gss at 12 GHz •	OCR Scan	ATF-26884	PDF

TRANSISTOR 2688 Search Results

TRANSISTOR 2688 Result Highlights (5)

TRANSISTOR 2688 Datasheets Context Search

10160-001

tip122 tip127 audio amp schematic

BD249C equivalent

bd249c equivalent

bd249c equivalent

ATF-26884-STR

Untitled

ATF-26884

TO-253-AA

ADM6315-31D4ARTZR7

transistor TO Outline Dimensions

la 4440 amplifier circuit diagram 300 watt

y51 h 120c

2689* transistor

Transistor 2SA 2SB 2SC 2SD

transistor d 2689

A5 GNE mosfet

Motorola transistors MRF 947

MHW721A2

C2688

TRANSISTOR 2688

ST Z0 103 MA

Untitled

ATF-26884