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    TRANSISTOR 2501 Search Results

    TRANSISTOR 2501 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2501 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    pin configuration NPN transistor 2n3906

    Abstract: 2N3906 transistor 2N3906 2N3906-BULK 2N3906BU 2N3906 APPLICATION 2n3906 hie 2N3904 2N3906-TAP MMBT3906
    Text: 2N3906 VISHAY Vishay Semiconductors Small Signal Transistor PNP Features • PNP Silicon Epitaxial Planar Transistor switching and amplifier applications. • As complementary type, the NPN transistor 2N3904 is recommended. • On special request, this transistor is also manufactured in the pin configuration TO-18.


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    PDF 2N3906 2N3904 OT-23 MMBT3906. 2N3906-BULK D-74025 01-Sep-04 pin configuration NPN transistor 2n3906 2N3906 transistor 2N3906 2N3906BU 2N3906 APPLICATION 2n3906 hie 2N3906-TAP MMBT3906

    pin configuration NPN transistor 2N3904

    Abstract: 2N3904 CIRCUIT 2N3904
    Text: 2N3904 VISHAY Vishay Semiconductors Small Signal Transistor NPN Features • NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. • As complementary type, the PNP transistor 2N3906 is recommended. • On special request, this transistor is also manufactured in the pin configuration TO-18.


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    PDF 2N3904 2N3906 OT-23 MMBT3904. D-74025 18-Aug-04 pin configuration NPN transistor 2N3904 2N3904 CIRCUIT 2N3904

    2N3906 plastic

    Abstract: transistor 2n3904
    Text: 2N3906 VISHAY Vishay Semiconductors Small Signal Transistor PNP Features • PNP Silicon Epitaxial Planar Transistor switching and amplifier applications. • As complementary type, the NPN transistor 2N3904 is recommended. • On special request, this transistor is also manufactured in the pin configuration TO-18.


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    PDF 2N3906 2N3904 OT-23 MMBT3906. D-74025 18-Aug-04 2N3906 plastic transistor 2n3904

    BFR540

    Abstract: MSB003
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFR540 NPN 9 GHz wideband transistor Product specification Supersedes data of 1995 September 1999 Aug 23 Philips Semiconductors Product specification NPN 9 GHz wideband transistor FEATURES BFR540 The transistor is encapsulated in a


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    PDF BFR540 BFR540 125006/03/pp16 MSB003

    BFG35

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG35 NPN 4 GHz wideband transistor Product specification Supersedes data of 1995 Sep 12 1999 Aug 24 Philips Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFG35 PINNING NPN planar epitaxial transistor


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    PDF BFG35 OT223 MSB002 OT223. 125006/03/pp16 BFG35

    BUJ103AX

    Abstract: BP317 BU1706AX
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BUJ103AX Silicon Diffused Power Transistor Product specification August 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ103AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended


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    PDF BUJ103AX SCA60 135104/240/02/pp12 BUJ103AX BP317 BU1706AX

    BP317

    Abstract: BU1706AX BUJ204AX
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BUJ204AX Silicon Diffused Power Transistor Product specification August 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ204AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended


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    PDF BUJ204AX SCA60 135104/204/02/pp12 BP317 BU1706AX BUJ204AX

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BUJ103A Silicon Diffused Power Transistor Product specification August 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ103A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use


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    PDF BUJ103A O220AB SCA60 135104/240/02/pp12

    BUJ204A

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BUJ204A Silicon Diffused Power Transistor Product specification August 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ204A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a TO220AB envelope intended for


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    PDF BUJ204A O220AB SCA60 135104/240/02/pp12 BUJ204A

    str 6707

    Abstract: philips 23 2108 npn transistor ic str 6707 TO-202 transistor NPN BF859 BP317 D-20097 transistor d 2333 philips ltd 202
    Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D067 BF859 NPN high-voltage transistor Product specification Supersedes data of 1996 Dec 09 1999 Apr 14 Philips Semiconductors Product specification NPN high-voltage transistor BF859 DESCRIPTION NPN transistor in a TO-202 plastic package.


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    PDF M3D067 BF859 O-202 MBH794 O-202) SCA63 115002/00/03/pp8 str 6707 philips 23 2108 npn transistor ic str 6707 TO-202 transistor NPN BF859 BP317 D-20097 transistor d 2333 philips ltd 202

    transistor BUJ100

    Abstract: cfl circuits cfl Self-Oscillating Philips cfl buj100 equivalent BALLAST low loss philips buj100 transistor BEP transistor BUJ100 cfl circuit
    Text: PHILIPS SEMICONDUCTORS APPLICATION NOTE Philips' BUJ100 transistor in TO-92 suits all Compact Fluorescent Lamp powers Philips Semiconductors has developed a new generation of planar passivated, fast switching bipolar lighting transistor that breaks new ground in lighting-transistor technology. Rated at 700 V


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    PDF BUJ100 transistor BUJ100 cfl circuits cfl Self-Oscillating Philips cfl buj100 equivalent BALLAST low loss philips buj100 transistor BEP transistor cfl circuit

    339 marking code SMD transistor

    Abstract: TRANSISTOR SMD MARKING CODE SP TRANSISTOR SMD MARKING CODE dk MARKING CODE 03 JAPAN transistor 5- pin smd IC 358
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTA114EEF PNP resistor-equipped transistor Preliminary specification 1998 Nov 11 Philips Semiconductors Preliminary specification PNP resistor-equipped transistor PDTA114EEF FEATURES • Power dissipation comparable to


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    PDF M3D425 PDTA114EEF SC-89 OT490) PDTC114EEF. SCA60 115104/00/01/pp8 339 marking code SMD transistor TRANSISTOR SMD MARKING CODE SP TRANSISTOR SMD MARKING CODE dk MARKING CODE 03 JAPAN transistor 5- pin smd IC 358

    PDTC143XE

    Abstract: PDTA143XE
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC143XE NPN resistor-equipped transistor Product specification File under Discrete Semiconductors, SC04 1998 May 29 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC143XE FEATURES


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    PDF M3D173 PDTC143XE PDTC143XE MAM346 SC-75 OT416) SCA60 115104/1200/01/pp8 PDTA143XE

    BY206

    Abstract: BRY61 BZY88C8V2 BRY61 EQUIVALENT "Programmable Unijunction Transistor" unijunction application note
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BRY61 Programmable unijunction transistor Product specification Supersedes data of 1997 Jul 21 1999 Apr 27 Philips Semiconductors Product specification Programmable unijunction transistor DESCRIPTION


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    PDF M3D088 BRY61 MGL167 MGC421 SCA63 115002/00/03/pp8 BY206 BRY61 BZY88C8V2 BRY61 EQUIVALENT "Programmable Unijunction Transistor" unijunction application note

    MARKING SMD PNP TRANSISTOR R 172

    Abstract: TRANSISTOR SMD MARKING CODE SP TRANSISTOR SMD MARKING CODE al TRANSISTOR SMD MARKING CODE 501 PDTA114EEF SMD transistor MARKING CODE 43 SMD transistor MARKING CODE 213 marking code UL SMD Transistor TRANSISTOR SMD MARKING CODE rd SMD TRANSISTOR MARKING 821
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTA114EEF PNP resistor-equipped transistor Preliminary specification Supersedes data of 1998 Nov 11 1999 May 21 Philips Semiconductors Preliminary specification PNP resistor-equipped transistor PDTA114EEF FEATURES


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    PDF M3D425 PDTA114EEF 115002/00/02/pp8 MARKING SMD PNP TRANSISTOR R 172 TRANSISTOR SMD MARKING CODE SP TRANSISTOR SMD MARKING CODE al TRANSISTOR SMD MARKING CODE 501 PDTA114EEF SMD transistor MARKING CODE 43 SMD transistor MARKING CODE 213 marking code UL SMD Transistor TRANSISTOR SMD MARKING CODE rd SMD TRANSISTOR MARKING 821

    marking P33 transistor

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 PDTC143TT NPN resistor-equipped transistor Product specification File under Discrete Semiconductors, SC04 1998 May 29 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC143TT


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    PDF M3D088 PDTC143TT MAM360 PDTC143TT SCA60 115104/1200/01/pp8 marking P33 transistor

    2n3904, itt

    Abstract: pin configuration NPN transistor 2n3906 6,8 ITT TRANSISTOR 2N3904 E 25 ITT Intermetall
    Text: 2N3906 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary type, the NPN transistor 2N3904 is recommended. On special request, this transistor is also manufactured in the pin configuration TO-18. L m ax. 0 0 . 5 5


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    PDF 2N3906 2N3904 500pLS 2n3904, itt pin configuration NPN transistor 2n3906 6,8 ITT TRANSISTOR 2N3904 E 25 ITT Intermetall

    transistor 9015 c

    Abstract: transistor c 9015 C 9015 transistor pnp transistor 9015 9015 transistor 9015 V. 9015 c af 9015 transistor 9015 LM 9015
    Text: HN 9015 PNP Silicon Expitaxial Planar Transistor for switching and AF am plifier applications. The transistor is subdivided into four groups, A, B, C, and D, according to its DC current gain. As com plem entary type the NPN transistor HN 9014 is recommended.


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    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


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    transistor 9014 C npn

    Abstract: V. 9014 c C 9014 transistor TRANSISTOR c 9014 9014 C transistor 9014 NPN transistor 9014 c 9014 Transistor S 9014 npn V 9014 c
    Text: HN 9014 NPN Silicon Expitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C, and D, acco rd in g to its DC current gain. As com plem entary type the PNP transistor HN 9015 is recommended.


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    MARKING SMD pnp TRANSISTOR ec

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS PDTC124XEF NPN resistor-equipped transistor Preliminary specification Supersedes data of 1998 Nov 11 Philips Semiconductors 1999 May 18 PHILIPS PHILIPS Philips Semiconductors Preliminary specification NPN resistor-equipped transistor


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    PDF PDTC124XEF PDTC124XEF SCA64 5002/00/02/pp8 MARKING SMD pnp TRANSISTOR ec

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS PDTC114TU NPN resistor-equipped transistor Preliminary specification Supersedes data of 1998 May 19 Philips Semiconductors 1999 Apr 16 PHILIPS PHILIPS Philips Semiconductors Preliminary specification NPN resistor-equipped transistor


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    PDF PDTC114TU OT323 PDTC114TU SCA63 5002/00/03/pp8

    PDTC144ET

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS PDTC144ET NPN resistor-equipped transistor Product specification Supersedes data of 1998 May 19 Philips Semiconductors 1999 Apr 16 PHILIPS PHILIPS Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC144ET


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    PDF PDTC144ET PDTC144ET PDTA144cs SCA63 15002/00/05/pp8

    t416

    Abstract: 817 CN
    Text: DISCRETE SEMICONDUCTORS PDTC114YE NPN resistor-equipped transistor Product specification Supersedes data of 1998 May 19 Philips Semiconductors 1999 May 18 PHILIPS PHILIPS Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114YE


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    PDF PDTC114YE PDTC114YE 5002/00/03/pp8 t416 817 CN