2N4265
Abstract: 2904S
Text: 2N4264 2N4265 MAXIMUM RATINGS Symbol 2N4264 2N4265 Unit Collector-Emltter Voltage Characteristic VCEO 15 12 Vdc Collector-Base Voltage v CBO Emitter-Base Voltage 30 v EBO 6.0 Vdc Collector Current — Continuous ic 200 mAdc Total Device Dissipation @ Ta = 25°C
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2N4264
2N4265
2N4265
O-226AA)
010332b
2904S
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Untitled
Abstract: No abstract text available
Text: KSC2759 NPN EPITAXIAL SILICON TRANSISTOR MIXER, OSCILLATOR FOR UHF TUNER SO T-23 ABSOLUTE MAXIMUM RATINGS T,=25°C Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature
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KSC2759
93SMH2
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2N4265
Abstract: 2N4264 QS 100 NPN Transistor
Text: 2N4264 2N4265 MAXIMUM RATINGS Symbol 2N4264 2N4265 Collector-Emitter Voltage VCEO 15 12 Collector-Base Voltage v CBO Emitter-Base Voltage Characteristic 30 Unit Vdc Ve b o 6.0 Vdc Collector Current — Continuous Ic 200 mAdc Total Device Dissipation a T a = 25°C
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2N4264
2N4265
2N4265
O-226AA)
2N426S
QS 100 NPN Transistor
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2SB1050
Abstract: No abstract text available
Text: Transistor 2SB1050 Silicon PNP epitaxial planer type For low-frequency amplification Unit: mm 2.5±0.1 1.0 4.5±0.1 R 0.9 R 0.7 4.1±0.2 ● Low collector to emitter saturation voltage VCE(sat). Large collector current IC. M type package allowing easy automatic and manual insertion as
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2SB1050
2SB1050
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Untitled
Abstract: No abstract text available
Text: KSC2710 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-92S • Complement to KSA1150 • Collector Dissipation Pc“ 300mW ABSOLUTE MAXIMUM RATINGS TA- 2 5 t Characteristic Symbol Collector-Base Vottage Collector-Emttter Voltage Emitter-Base Voltage
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KSC2710
KSA1150
300mW
O-92S
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BLV32F
Abstract: No abstract text available
Text: BLV32F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLV32F is Designed for in linear v.h.f. amplifiers of television transmitters and transporters. FEATURES: PACKAGE STYLE .500 6L FLG • Diffused emitter ballasting resistors • PG = 16 dB at 10 W/224 MHz
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BLV32F
BLV32F
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BLV32F
Abstract: BLV32
Text: BLV32F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLV32F is Designed for in linear v.h.f. amplifiers of television transmitters and transporters. FEATURES: PACKAGE STYLE .500 6L FLG • Diffused emitter ballasting resistors • PG = 16 dB at 10 W/224 MHz
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BLV32F
BLV32F
BLV32
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bvc62
Abstract: transistor BD 139 Transistor 5332 bvc62 smd philips 2322 734 UT70-25 smd transistor k2 2222 500 16641 transistor BD B1 SMD u 9330
Text: Philips Semiconductors Product specification UHF linear push-pull power transistor FEATURES BLV859 PINNING SOT262B • Double internal input and output matching for an optimum wideband capability and high gain • Polysilicon emitter ballasting resistors for an optimum
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BLV859
OT262B
711002b
OT262B.
711Dfi5b
bvc62
transistor BD 139
Transistor 5332
bvc62 smd
philips 2322 734
UT70-25
smd transistor k2
2222 500 16641
transistor BD B1 SMD
u 9330
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI TRANSISTOR MODULES j QM30E2Y/ E3Y-2H ¡ MEDIUM POWER SWITCHING USE INSULATED TYPE QM30E2Y/E3Y-2H • lc • V C EX Collector current. 30A Collector-emitter voltage. 1000V DC current gain. 75
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QM30E2Y/
QM30E2Y/E3Y-2H
E80276
E80271
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Bt 2313
Abstract: Transistor 123AP transistor t18 FET transistor BD 263 transistor ECG 152 transistor ecg 226 123ap Philips ECG 152 ic 2429 ECG24
Text: PHILIPS E C G INC S4E D Transistors icont'd ECG Type Description and Application • bbSBTEfl DDDTIH? &12 ■ E C G Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base Volts b v Cbo Collector To Emitter Volts b v Ceo Base to Emitter Volts
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GGG71H7
ECG58
ECG59)
TB-35
T44-1
ECG59
ECG58)
ECG60
Bt 2313
Transistor 123AP
transistor t18 FET
transistor BD 263
transistor ECG 152
transistor ecg 226
123ap
Philips ECG 152
ic 2429
ECG24
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NTE2592
Abstract: No abstract text available
Text: NTE2592 Silicon NPN Transistor Horizontal Output for HDTV Features: D High Breakdown Voltage: V BR CBO = 2000V Min D Isolated TO220 Type Package Absolute Maximum Ratings: (TC = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2000V
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NTE2592
NTE2592
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NTE2540
Abstract: 600V NPN 2A
Text: NTE2540 Silicon NPN Transistor Darlington, High Voltage Switch Features: D High DC Current Gain: hFE = 600 Min VCE = 2V, IC = 2A D Monolithic Construction w/Built–In Base–Emitter Shunt Resistor Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
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NTE2540
NTE2540
600V NPN 2A
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pin voltage of ic 393
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHD444001 TECHNICAL DATA DATA SHEET 224, REV – Formerly part number SHD4461 SMALL SIGNAL TRANSISTOR DESCRIPTION: SINGLE NPN SMALL SIGNAL TRANSISTOR IN A PACKAGE. MAXIMUM RATINGS RATING ALL RATINGS ARE AT TA = 25°C UNLESS OTHERWISE SPECIFIED .
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SHD4461
SHD444001
pin voltage of ic 393
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NEC JAPAN 282 110 01
Abstract: NEC 2561 TYP 513 309 2SC4570 2SC4570-T1 2SC4570-T2 date sheet ic 7483 marking 929 922 nec 5261
Text: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4570 is a low supply voltage transistor designed for UHF OSC/MIX. 2.1±0.1 It is suitable for a high density surface mount assembly since the
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2SC4570
2SC4570
SC-70)
2SC4570-T1
NEC JAPAN 282 110 01
NEC 2561
TYP 513 309
2SC4570-T1
2SC4570-T2
date sheet ic 7483
marking 929 922
nec 5261
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100-P
Abstract: BU2522AF ScansUX30
Text: Philips Semiconductors Product specification Silicon diffused power transistor BU2522AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for
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BU2522AF
711Qfi5b
QQ77fc
OT199;
711002b
0G77b33
100-P
ScansUX30
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NTE2339
Abstract: npn 10a 800v
Text: NTE2339 Silicon NPN Transistor High Voltage, High Speed Switch Features: D High Breakdown Voltage, High Reliability D Fast Switching Speed D Wide Safe Operating Area Absolute Maximum Ratings: TA = +25°C unless otherwise specified Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1100V
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NTE2339
300mA,
NTE2339
npn 10a 800v
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NTE2336
Abstract: No abstract text available
Text: NTE2336 Silicon NPN Transistor Darlington Switch w/Internal Damper & Zener Diode Features: D 60V Zener Diode Built–In Between Collector and Base D Low Fluctuation in Breakdown Voltages D High Energy Handling Capability D High Speed Switching Absolute Maximum Ratings: TC = +25°C unless otherwise specified
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NTE2336
500mA,
100mH,
NTE2336
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zener 4A
Abstract: Zener 224 NTE2336
Text: NTE2336 Silicon NPN Transistor Darlington Switch w/Internal Damper & Zener Diode Features: D 60V Zener Diode Built−In Between Collector and Base D Low Fluctuation in Breakdown Voltages D High Energy Handling Capability D High Speed Switching Absolute Maximum Ratings: TC = +25°C unless otherwise specified
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NTE2336
500mA,
100mH,
zener 4A
Zener 224
NTE2336
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Untitled
Abstract: No abstract text available
Text: Transistors General Purpose Transistor 50V, 0.15A 2SC2412K/2SC4081/2SC4617/2SC1740S •Fe a tu re s 1) Low Cob. C ob = 2.0pF (Typ.) 2) Complements the 2SA1037AK/ 2SA1576A/2SA1774/2SA933AS. •E xte rn a l dimensions (Units: mm) 2SC2412K 2SC4081 r—1 I 0.65 0.65
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2SC2412K/2SC4081/2SC4617/2SC1740S
2SA1037AK/
2SA1576A/2SA1774/2SA933AS.
2SC2412K
2SC4081
SC-59
32MH2
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d1711
Abstract: 200V transistor npn 2a T33 transistor t33-13 samsung tv KSD5003 KSD5004
Text: SA MS U N G SEMICO ND UC TO R INC KSD5003 14E D I 7^4142 2 NPN T R IP LE DIFFUSED PLANAR S IU C O N TRAN SISTO R T -33 - COLOR TV HORIZONTAL OUTPUT APPLICATIONS DAMPER DIODE BUILT IN HIGH Collector^«so Voltage V c o = 1 5 0 0 V ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
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KSD5003
7ikm42
Vcb-800V,
KSD5004
d1711
200V transistor npn 2a
T33 transistor
t33-13
samsung tv
KSD5003
KSD5004
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CSM224
Abstract: No abstract text available
Text: ISOCOMLTD CSM 224 Small Outline Surface Mount Optocouplers Transistor Output Device CSM 224 4 2 5 0.6 *6 1.2 1 3.0 .25 Isocom Ltd supplies high reliability devices for applications requiring an operating temperature range of -55°C to +125°C e.g. military
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BS9400,
1294/M)
M/1084/CECC/UK)
CSM224
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C5103
Abstract: transistor C5103 C5103 y C5103 Q 2SC5103F5 C5103Q 0014610 W-10 ir 7626
Text: 2 SC 5 1 0 3 F 5 Transistor, NPN Features Dimensions U nits: mm • available in CPT F5 (SC-63) package • package marking: C 5103^G , where ★ is hFE code and □ is lot number high-speed switching, typically tf = 0.1 [is for Iq = 3 A 6.5 ± 0.2 r , +0-2
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2SC5103F5
SC-63)
C5103
10WforTc
2SC5103F5
transistor C5103
C5103 y
C5103 Q
C5103Q
0014610
W-10
ir 7626
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Untitled
Abstract: No abstract text available
Text: ISOCOM LTD CSM 224 Small Outline Surface Mount Optocouplers Transistor Output Device CSM 224 2 5 0.6 *6 1.2 3.0 .25 Devices supplied are approved to BS9400, and have completed rigorous testing. Various high reliability test options are offered. As a manufacturer of high reliability optocouplers,
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BS9400,
1294/M)
M/1084/CECC/UK)
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Untitled
Abstract: No abstract text available
Text: NST30010MXV6T1G Dual Matched General Purpose Transistor PNP Matched Pair These transistors are housed in an ultra−small SOT563 package ideally suited for portable products. They are assembled to create a pair of devices highly matched in all parameters, eliminating the need
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NST30010MXV6T1G
OT563
NST30010MXV6/D
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