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    TRANSISTOR 2227 Search Results

    TRANSISTOR 2227 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2227 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UG25N45 Preliminary NPN SILICON TRANSISTOR N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR „ DESCRIPTION UTC UG25N45 is an N-channel NPN transistor. It can be used in strobe flash applications „ FEATURES * Very high input impedance


    Original     		PDF UG25N45 UG25N45 UG25N45L UG25N45G UG25N45-TA3-T UG25N45L-TA3-T UG25N45G-TA3-T O-220 QW-R203-037

    marking Y1 transistor

    Abstract: fairchild pin 1 marking
    Text: FMB2227A C2 Package: SuperSOT-6 Device Marking: .001 Note: The " . " dot signifies Pin 1 E1 C1 Transistor 1 is NPN device, transistor 2 is PNP device. B2 E2 B1 NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package This complementary dual device was designed for use as a medium power amplifier and switch requiring


    Original     		PDF FMB2227A 300mA. marking Y1 transistor fairchild pin 1 marking

    marking Y1 transistor

    Abstract: transistor marking y1 y1 transistor Supersot 6 transistor y1 Supersot6 PR63 y1 npn FMB2227A
    Text: FMB2227A C2 Package: SuperSOT-6 Device Marking: .001 Note: The " . " dot signifies Pin 1 E1 C1 Transistor 1 is NPN device, transistor 2 is PNP device. B2 E2 B1 NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package This complementary dual device was designed for use as a medium power amplifier and switch requiring


    Original     		PDF FMB2227A 300mA. 150mA, 300mA, 150mA 300mA 100kHz 100MHz lwpPr19 marking Y1 transistor transistor marking y1 y1 transistor Supersot 6 transistor y1 Supersot6 PR63 y1 npn FMB2227A

    TRANSISTOR 2226

    Abstract: 2226 transistor UNR2227
    Text: Transistors with built-in Resistor UNR2225/2226/2227 UN2225/2226/2227 Silicon NPN epitaxial planer transistor Unit: mm For muting 0.40+0.10 –0.05 (0.95) (0.95) 1.9±0.1 • Resistance by Part Number 0.4±0.2 2.90+0.20 –0.05 (R2)   6.8 kΩ 1.1+0.2


    Original     		PDF UNR2225/2226/2227 UN2225/2226/2227) UNR2225 UNR2226 UNR2227 SJH00040AED TRANSISTOR 2226 2226 transistor

    2226 transistor

    Abstract: ic MARKING FZ UNR2225 UNR2226 UNR2227 transistor 2227
    Text: Transistors with built-in Resistor UNR2225/2226/2227 UN2225/2226/2227 Silicon NPN epitaxial planer transistor Unit: mm For muting 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 • Resistance by Part Number 2.90+0.20 –0.05 (R2)   6.8 kΩ


    Original     		PDF UNR2225/2226/2227 UN2225/2226/2227) UNR2225 UNR2226 UNR2227 2226 transistor ic MARKING FZ UNR2225 UNR2226 UNR2227 transistor 2227

    HMXR-5001

    Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
    Text: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog


    Original     		PDF

    RN1221

    Abstract: RN1227 RN2221 RN2222 RN2223 RN2224 RN2225 RN2226 RN2227 2226 transistor
    Text: RN2221~RN2227 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2221,RN2222,RN2223 RN2224,RN2225,RN2226,RN2227 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications High current type (IC(MAX) = −800mA) With built-in bias resistors


    Original     		PDF RN2221 RN2227 RN2222 RN2223 RN2224 RN2225 RN2226 -800mA) RN1221 RN1227 RN2223 RN2227 2226 transistor

    RN1227

    Abstract: RN1221 RN1222 RN1223 RN1224 RN1225 RN1226 RN2221
    Text: RN1221,RN1222,RN1223,RN1224,RN1225,RN1226,RN1227 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1221,RN1222,RN1223,RN1224 RN1225,RN1226,RN1227 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications High current type (IC(MAX) = 800mA)


    Original     		PDF RN1221 RN1222 RN1223 RN1224 RN1225 RN1226 RN1227 RN1227 RN2221

    RN1221

    Abstract: RN1222 RN1223 RN1224 RN1225 RN1226 RN1227 RN2221 1227 rm-1225
    Text: RN1221,RN1222,RN1223,RN1224,RN1225,RN1226,RN1227 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1221,RN1222,RN1223,RN1224 RN1225,RN1226,RN1227 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm High current type (IC(MAX) = 800mA)


    Original     		PDF RN1221 RN1222 RN1223 RN1224 RN1225 RN1226 RN1227 RN1227 RN2221 1227 rm-1225

    RN1221

    Abstract: RN1227 RN2221 RN2222 RN2223 RN2224 RN2225 RN2226 RN2227
    Text: RN2221~RN2227 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2221,RN2222,RN2223 RN2224,RN2225,RN2226,RN2227 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z High current type (IC(MAX) = −800mA) z With built-in bias resistors


    Original     		PDF RN2221 RN2227 RN2222 RN2223 RN2224 RN2225 RN2226 -800mA) RN1221 RN1227 RN2223 RN2227

    Untitled

    Abstract: No abstract text available
    Text: RN2221~RN2227 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2221,RN2222,RN2223 RN2224,RN2225,RN2226,RN2227 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications z High current type (IC(MAX) = −800mA) z With built-in bias resistors


    Original     		PDF RN2221 RN2227 RN2222 RN2223 RN2224 RN2225 RN2226 -800mA)

    RN2227

    Abstract: 2226 transistor transistor 2227 RN2222 RN2224 2227 RN1221 RN1227 RN2221 RN2223
    Text: RN2221~RN2227 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2221,RN2222,RN2223 RN2224,RN2225,RN2226,RN2227 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm High current type (IC(MAX) = −800mA) With built-in bias resistors


    Original     		PDF RN2221 RN2227 RN2222 RN2223 RN2224 RN2225 RN2226 -800mA) RN2227 2226 transistor transistor 2227 2227 RN1221 RN1227 RN2223

    RN1221

    Abstract: RN1222 RN1223 RN1224 RN1225 RN1226 RN1227 RN2221
    Text: RN1221,RN1222,RN1223,RN1224,RN1225,RN1226,RN1227 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1221,RN1222,RN1223,RN1224 RN1225,RN1226,RN1227 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications z High current type (IC(MAX) = 800mA)


    Original     		PDF RN1221 RN1222 RN1223 RN1224 RN1225 RN1226 RN1227 RN1227 RN2221

    RN1222

    Abstract: 1227
    Text: RN1221,RN1222,RN1223,RN1224,RN1225,RN1226,RN1227 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1221,RN1222,RN1223,RN1224 RN1225,RN1226,RN1227 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l High current type (IC(MAX) = 800mA)


    Original     		PDF RN1221 RN1222 RN1223 RN1224 RN1225 RN1226 RN1227 1227

    RN1224

    Abstract: No abstract text available
    Text: RN1221,RN1222,RN1223,RN1224,RN1225,RN1226,RN1227 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1221,RN1222,RN1223,RN1224 RN1225,RN1226,RN1227 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications z High current type (IC(MAX) = 800mA)


    Original     		PDF RN1221 RN1222 RN1223 RN1224 RN1225 RN1226 RN1227

    SC 2272

    Abstract: transistor D 2581 724 motorola NPN Transistor motorola transistor r 724 LT4772 t313 Motorola Transistor D 799 motorola ECM 632 transistor motorola transistor 764
    Text: MOTORCLA SC XSTRS/R F 1EE D | b3t,72SH Gafl72S3 T | MOTOROLA • SEMICONDUCTOR TECHNICAL DATA LT4772 The RF Line N P N Silicon High Frequency Transistor 2 Iß = 50 mA HIGH FREQUENCY TRANSISTOR NPN SILICON . . . designed primarily for use in low noise, small-signal amplifiers in satellite down con­


    OCR Scan     		PDF GQfl72S3 SC 2272 transistor D 2581 724 motorola NPN Transistor motorola transistor r 724 LT4772 t313 Motorola Transistor D 799 motorola ECM 632 transistor motorola transistor 764

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


    OCR Scan     		PDF

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


    OCR Scan     		PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643

    Untitled

    Abstract: No abstract text available
    Text: SECTION 2 SPECIFICATIONS INTRODUCTION The Digital Signal Processor DSP is fabricated using high-density Complementary Metal Oxide Semiconductor (CMOS) with Transistor-TransistorLogic (TTL) compatible inputs and outputs. This section covers the maximum ratings, thermal characteristics, and electrical characteristics of the DSP96002.


    OCR Scan     		PDF DSP96002. DSP96002/D, G14fl47b

    A5 GNE mosfet

    Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA


    OCR Scan     		PDF 1PHX11136Q-14 A5 GNE mosfet jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor

    Motorola transistors MRF 947

    Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
    Text: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that


    OCR Scan     		PDF 2PHX11136Q-17 Motorola transistors MRF 947 trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp

    d2396

    Abstract: TRANSISTOR PNP B1443 D2396 equivalent B1569A TRANSISTORS PNP 50 V 1 A B1443 B1186A transistor c5147 b1344 transistor equivalent b1443 K2460
    Text: Transistors Transistors Products Tables Surface mounting types • M O S FET • Automatic mounting is possible : Products are housed in a package which supports automatic mounting. • 4V drive types : Direct drive from 1C allows reduction of components elimination of buffer transistor .


    OCR Scan     		PDF 2SK2503 RK7002 TC363TS DTC314TS TC114G 100mA TA124G DTC144G d2396 TRANSISTOR PNP B1443 D2396 equivalent B1569A TRANSISTORS PNP 50 V 1 A B1443 B1186A transistor c5147 b1344 transistor equivalent b1443 K2460

    Helipot

    Abstract: R10K-L.25 7216-R10K-L MRF171 motorola an215a r10kl.25 helipot 7216 R/High frequency MRF transistor motorola MRF 172 R20KL.25 HELIPOT
    Text: MOTOROLA •I SEMICONDUCTOR TECHNICAL DATA MRF171 The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode . . . designed primarily for wideband large-signal output and driver stages up to 200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc


    OCR Scan     		PDF MRF171 MRF171, MRF171 AN215A Helipot R10K-L.25 7216-R10K-L motorola an215a r10kl.25 helipot 7216 R/High frequency MRF transistor motorola MRF 172 R20KL.25 HELIPOT

    MT1115

    Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
    Text: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir


    OCR Scan     		PDF 108th MT1115 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117