TRANSISTOR 2204 Search Results

TRANSISTOR 2204 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR 2204 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
2SC 8550 Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545 Text: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4	Original	3SK309 3SK317 3SK318 BB101C BB102C BB301C BB302C BB304C BB305C BB501C 2SC 8550 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545	PDF
BTB1424L3 Abstract: BTD2150L3 Text: CYStech Electronics Corp. Spec. No. : C848L3 Issued Date : 2004.10.07 Revised Date : 2204.11.15 Page No. : 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTD2150L3 Features • Low VCE sat , VCE(sat)=0.25 V (typical), at IC / IB = 2A / 0.2A • Excellent current gain characteristics	Original	C848L3 BTD2150L3 BTB1424L3 OT-223 UL94V-0 BTB1424L3 BTD2150L3	PDF
RN2206 Abstract: RN2201 RN1201 RN1206 RN2202 RN2203 RN2204 RN2205 Text: RN2201~RN2206 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2201,RN2202,RN2203 RN2204,RN2205,RN2206 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications With built-in bias resistors Simplify circuit design	Original	RN2201 RN2206 RN2202 RN2203 RN2204 RN2205 RN1201 RN1206 RN2206 RN1206 RN2203	PDF
RN2202 Abstract: RN1201 RN1206 RN2201 RN2203 RN2204 RN2205 RN2206 transistor 2204 transistor 2206 Text: RN2201~RN2206 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2201,RN2202,RN2203 RN2204,RN2205,RN2206 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm With built-in bias resistors Simplify circuit design	Original	RN2201 RN2206 RN2202 RN2203 RN2204 RN2205 RN1201 RN1206 RN1206 RN2203 RN2206 transistor 2204 transistor 2206	PDF
Untitled Abstract: No abstract text available Text: SRA2204M Semiconductor PNP Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process	Original	SRA2204M O-92M KSR-I014-001	PDF
RN2202 Abstract: RN2203 RN1201 RN1206 RN2201 RN2204 RN2205 RN2206 transistor 2204 Text: RN2201~RN2206 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2201,RN2202,RN2203 RN2204,RN2205,RN2206 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications z With built-in bias resistors z Simplify circuit design	Original	RN2201 RN2206 RN2202 RN2203 RN2204 RN2205 RN1201 RN1206 RN2203 RN1206 RN2206 transistor 2204	PDF
transistor 2206 Abstract: transistor 2204 RN2206 equivalent transistor rn2201 Text: RN2201~RN2206 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2201,RN2202,RN2203 RN2204,RN2205,RN2206 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l With built-in bias resistors l Simplify circuit design	Original	RN2201 RN2206 RN2202 RN2203 RN2204 RN2205 RN1201 RN1206 transistor 2206 transistor 2204 RN2206 equivalent transistor rn2201	PDF
transistor 2204 Abstract: SRA2204M Text: SRA2204M Semiconductor PNP Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process	Original	SRA2204M O-92M KSR-I014-000 SRA22 -10mA -10mA, transistor 2204 SRA2204M	PDF
transistor 2204 Abstract: No abstract text available Text: SRA2204M Semiconductor PNP Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process	Original	SRA2204M SRA2204M O-92M KSR-I014-002 KSR-I014-002 transistor 2204	PDF
transistor 2204 Abstract: rn2202 Text: RN2201~RN2206 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2201,RN2202,RN2203 RN2204,RN2205,RN2206 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications z With built-in bias resistors z Simplify circuit design	Original	RN2201 RN2206 RN2202 RN2203 RN2204 RN2205 RN1201 RN1206 transistor 2204	PDF
HBC556 Abstract: No abstract text available Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6422 Issued Date : 1992.11.25 Revised Date : 2001.06.15 Page No. : 1/3 HBC556 PNP EPITAXIAL PLANAR TRANSISTOR Description The HBC556 is primarily intended for use in driver stage of audio amplifiers. Features	Original	HE6422 HBC556 HBC556	PDF
2sb504 Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52 Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle	OCR Scan		PDF
XR-2203 Abstract: XR-2203CP XR-2204 XR2203CP XR2204CP 2203CP XR-2202 2204cp XR2203 XR2204 Text: Z * EXAR XR-220172/3/4 High-Voltage, High-Current Darlington Transistor Arrays GENERAL DESCRIPTION FUNCTIONAL BLOCK DIAGRAM The XR-2201, XR-2202, XR-2203, and XR-2204 Darlington transistor arrays are comprised of seven sil icon NPN Darlington pairs on a single monolithic sub	OCR Scan	XR-220172/3/4 XR-2201, XR-2202, XR-2203, XR-2204 500mA XR-1568M XR-1568/XR-1468C XR-1468/1568 XR-2203 XR-2203CP XR2203CP XR2204CP 2203CP XR-2202 2204cp XR2203 XR2204	PDF
BAL0204-125 Abstract: No abstract text available Text: GAE GREAT AMERICAN ELECTROINCS BAL0204-125 Silicon NPN high power VHF transistor BAL0204-125 transistor assembly is designed for wideband push-pull power amplifiers required in AM or FM communications equipment (220-400 Mhz frequency band) for radio links	OCR Scan	BAL0204-125 OT-161 BAL0204-125	PDF

c237p Abstract: GPe600 equivalent of SL 100 NPN Transistor 2wl1 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor 600 W ATTS LINEAR 30 M Hz RF POWER TRANSISTOR NPN SILICON . . . designed p rim a rily fo r h ig h -vo lta g e a p p lica tio n s as a h ig h -p o w e r lin e a r a m p lifie r	OCR Scan		PDF
JE 800 transistor Abstract: UPA76ha upa76 PA76HA KJE transistor pa76h JE 33 KJE 17 transistor B0188 361-s Text: NEC W T / \ M À f 7 'S ' h =7 Com pound Transistor ¿¿PA76HA t: ^ n p n x >; □ h^ * N PN Silicon Epitaxial Compound Transistor Differentia! Amplifier ^ f^ H l/PA C K A G E DIMENSIONS if t * / F E A T U R E S O l c h i p m iÊT ibètztb , -< 714 / V b e = 2 m V T Y P . )	OCR Scan	uPA76HA JE 800 transistor upa76 PA76HA KJE transistor pa76h JE 33 KJE 17 transistor B0188 361-s	PDF
upa74ha Abstract: UPA74 PA74H gw 348 PA74HA k 2445 transistor Text: NEC Aj i ï T / \ W V -7 9 Com pound Transistor f x N L it ¿¿PA74HA P N X + □ ] h I M ift fé S H f& K iJ t I B fll NPN Silicon Epitaxial Compound Transistor Differential Amplifier #Ä /FEA TU RES O 1 chip ffîiè 'C Jb h flìsb , - 4 T 1 Ë J V B E = 2 mV T Y P . )	OCR Scan	uPA74HA UPA74 PA74H gw 348 PA74HA k 2445 transistor	PDF
2SA1396 Abstract: 2SC3568 T108 TS33 Text: NEC j m = f T / x r x Silicon Power Transistor A 2SA1396 P N P i t: ^ * '> 7 7Vl'7ï2'> V □ > h =7 > i> 7* 9 x if f l PNP Silicon Epitaxial Transistor High Speed, High Voltage Switching Industrial Use 2 S A 1 3 9 6 i* iâ ^ * It Œ X ^ t L X W W fê H / P A C K A G E DIMENSIONS	OCR Scan	2SA1396 2SA1396 2SC3568 fifO988 2SC3568 T108 TS33	PDF
transistor D 2624 Abstract: No abstract text available Text: MOT OROL A SC XSTRS/R 4bE D F • b3b725H 0GT4b4b Ô « N O T t T -3 3 -C R M O TO ROLA SEMICONDUCTOR MRF427 TECHNICAL DATA MRF427A The R F Li ne 25 W (PEP) - 3 0 MHz RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR NPN SILICON . . . designed p rim a rily fo r high-voltage a p p lic a tio n s as a high -p o w e r	OCR Scan	b3b725H MRF427 MRF427A MRF427, transistor D 2624	PDF
2SC3616 Abstract: PA33 ScansUX881 Text: NEC j '> IJ 3 > Silicon Transistor 2SC3616 N P N l b ° ^ + '> 7 ; i/i'> lJ b =7>i> 7.9 NPN Silicon Epitaxial Transistor High Gain Amplifier W */F E A T U R E S K W M / P A C K A G E D IM E N SIO N S Unit : mm O igjhpE'C’t ’ o hFE = 8 0 0 ~ 3 2 0 0 @ V ce = 2 . 0 V, Ic = 300 mA	OCR Scan	2SC3616 PWS10 Cycled50 SC-43B 03---in-----in 000--i PA33 ScansUX881	PDF
UPA79C Abstract: PA79C uPA79 til 31a RA8040 JS 2204 hfe 4538 w0422 vtc 082 J2/JS 2204 Text: NEC a m + T ix f* Com pound Transistor A V PA79C -y°\ y ? Y=7^'<^ S NPN Silicon Epitaxial Transistor Array Mini Printer Driver It/r'fX- Yfrbtihl E S & S Ä ÿ ¿¿PA79C i, N PN ÿ i ) 3 > ( - 7 > ÿ X ^ i / <J ïvïICit Ltz \'ÿ>-J?7l"(Tto ÎÜ fâ W ' Œ * i ® < MOS IC c o m ijffi- ^ T - itS lO O m A S f i O t f ÿ	OCR Scan	uPA79C PA79C UPA79C PA79C uPA79 til 31a RA8040 JS 2204 hfe 4538 w0422 vtc 082 J2/JS 2204	PDF
130001 power transistor Abstract: transistor 130001 K1746 pepi c MRF426A MRF426 VK20Q PEPI -CH 2204B 725M Text: lt.3t.7HS4 007&clû3 1 89D 7 8 9 8 3 6 3 6 7 2 5 4 MOTOROLA SC <X STR S/R F D 3 7 - A * MOTOROLA SEMICONDUCTOR MRF426 MRF426A TECHNICAL DATA T h e R F L in e 25 W P E P )- 3 0 M H z R F POWER TRANSISTOR NPN S IL IC O N NPN SILICON RF POWER TRANSISTOR . . . designed for high gain driver and output linear am plifier stages	OCR Scan	MRF426 MRF426A MRF426, 130001 power transistor transistor 130001 K1746 pepi c MRF426A VK20Q PEPI -CH 2204B 725M	PDF
AN749 Abstract: MRF430 equivalent MRF430 TRANSISTOR 368-01 1N4997 2204B Z-235 Ohmite RF AN-749 Fair-Rite Text: MOTOROLA SC CXSTRS/R 4bE F D • b3b7254 DOTMbSfl 4 ■nOTb 15_ MOTOROLA ■ I SEMICONDUCTOR TECHNICAL DATA M RF430 The RF Line NPN Silicon RF Power Transistor 600 WATTS LINEAR) 30 MHz RF POWER TRANSISTOR NPN SILICON . . . desig n ed p rim a rily fo r h ig h -vo lta g e a p p lica tio n s as a h ig h -p o w e r lin e a r a m p lifie r	OCR Scan	b3b7254 MRF430 AN749 MRF430 equivalent MRF430 TRANSISTOR 368-01 1N4997 2204B Z-235 Ohmite RF AN-749 Fair-Rite	PDF
pepi c Abstract: TRANSISTOR D 2627 pepi cr MRF427 transistor D 2624 arco 469 trimmer capacitor arco TRIMMER capacitor 463 s49 transistor pepi TRIMMER capacitor 469 Text: MOTOROLA SC XSTRS/R 4bE F D m b3b7254 00T4b4b ô T - 3 3 "O S MOTOROLA SEM ICONDUCTOR MRF427 MRF427A TECHNICAL DATA The RF Line 25 W ( P E P ) - 3 0 MHz RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR NPN S IL IC O N . . . designed p r im a r ily fo r hig h -v o lta g e a p p lic a tio n s as a h ig h -p o w e r	OCR Scan	b3b7254 00T4b4b T-33-cR MRF427 MRF427A MRF427, T-33-09 pepi c TRANSISTOR D 2627 pepi cr transistor D 2624 arco 469 trimmer capacitor arco TRIMMER capacitor 463 s49 transistor pepi TRIMMER capacitor 469	PDF

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TRANSISTOR 2204 Search Results

TRANSISTOR 2204 Result Highlights (5)

TRANSISTOR 2204 Datasheets Context Search

2SC 8550

BTB1424L3

RN2206

RN2202

Untitled

RN2202

transistor 2206

transistor 2204

transistor 2204

transistor 2204

HBC556

2sb504

XR-2203

BAL0204-125

c237p

JE 800 transistor

upa74ha

2SA1396

transistor D 2624

2SC3616

UPA79C

130001 power transistor

AN749

pepi c