MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
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n24 transistor
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MMDT8050S Preliminary NPN EPITAXIAL SILICON TRANSISTOR LOW VCESAT NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC MMDT8050S is a Dual NPN epitaxial planar transistor. It has low VCE sat performance, and the transistor elements are
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MMDT8050S
MMDT8050S
MMDT8050SL-AL6-R
MMDT8050SG-AL6-R
OT-363
MMDT8050SL-AL6-R
QW-R218-012
n24 transistor
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MMDT8150 Preliminary NPN EPITAXIAL SILICON TRANSISTOR LOW VCESAT NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC MMDT8150 is a Dual NPN epitaxial planar transistor. It has low VCE SAT performance and the transistor elements are
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MMDT8150
MMDT8150
MMDT8150L-AL6-R
MMDT8150G-AL6-R
MMDT8150L-AL6-R
OT-363
QW-R218-017
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oz960
Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors
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KIA7900PI
TC7SH04FU
KIC7SH04FU
SC604*
KAC3301QN
M51943
KIA7042AP/AF
TC7SH08FU
KIC7SH08FU
LT1937
oz960
khb*9D5N20P
MB4213
KIA78*pI
MN1280
F10P048
KIA7812A
MJE13007
mb4213 equivalent
TRANSISTOR SMD N2 3j
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DSA00897
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MMDT8150 Preliminary NPN EPITAXIAL SILICON TRANSISTOR LOW VCESAT NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC MMDT8150 is a Dual NPN epitaxial planar transistor. It has low VCE SAT performance and the transistor elements are
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MMDT8150
MMDT8150
MMDT8150L-AL6-R
MMDT8150G-AL6-R
OT-363
QW-R218-017
DSA00897
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advantage and disadvantage of igbt
Abstract: HFBR1531Z HFBR-1522ETZ
Text: Galvanic isolation for IGBT-Driver White Paper By Michael Wappmannsberger Usually, an IGBT Insulated Gate Bipolar Transistor is described in the following way: "An IGBT is a combination of a field effect transistor and a bipolar transistor where an N-channel FET controls a bipolar transistor". Although this sentence
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AFBR-0546Z
AFBR-0548Z
HFBR-0543Z
AV02-3407EN
AFBR-1624Z/1629Z
AFBR-2624Z/2529Z
AV02-2699EN
HFBR-0500ETZ
IEC60664-1
AV02-3500EN
advantage and disadvantage of igbt
HFBR1531Z
HFBR-1522ETZ
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IMX17
Abstract: 2SD1484K dual transistor
Text: UTC IMX17 DUAL TRANSISTOR GENERAL PURPOSE DUAL TRANSISTOR FEATURES *Two 2SD1484K chips in an SMT package. *Mounting possible with SMT3 automatic mounting machine. *Transistor elements are independent, eliminating interference. *High collector current. Ic=500mA
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IMX17
2SD1484K
500mA
OT-26
QW-R215-001
IMX17
dual transistor
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DUAL TRANSISTOR
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., IMT17 DUAL TRANSISTOR GENERAL PURPOSE DUAL TRANSISTOR FEATURES *Two MMBT2907A chips in an SMT package. *Transistor elements are independent, eliminating interference. *High collector current. Ic = -500mA EQUIVALENT CIRCUITS
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IMT17
MMBT2907A
-500mA
IMT17L-AG6
IMT17G-AG6-R
OT-26
QW-R215-006
DUAL TRANSISTOR
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PH2731-20M
Abstract: 3 w RF POWER TRANSISTOR 2.7 ghz
Text: an AMP company Radar Pulsed Power Transistor, 2OW, loops Pulse, 10% Duty PH2731-20M 2.7 - 3.1 GHz v2.00 9co Features ,-^ :22.85> NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigicated Geometry
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PH2731-20M
PI42731
PH2731-20M
3 w RF POWER TRANSISTOR 2.7 ghz
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Untitled
Abstract: No abstract text available
Text: UTC IMX17 DUAL TRANSISTOR GENERAL PURPOSE DUAL TRANSISTOR FEATURES *Two 2SD1484K chips in an SMT package. *Mounting possible with SMT3 automatic mounting machine. *Transistor elements are independent, eliminating interference. *High collector current. Ic=500mA
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IMX17
2SD1484K
500mA
OT-26
QW-R215-001
500mA,
100mA
-20mA,
100MHz
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JEDEC MO-187
Abstract: MO-187 ZXT14P20DX ZXT14P20DXTA ZXT14P20DXTC DSA0037477
Text: ZXT14P20DX SuperSOT4 20V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-20V; RSAT = 20m ; IC= -5A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give
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ZXT14P20DX
ZXT14P20DXTA
JEDEC MO-187
MO-187
ZXT14P20DX
ZXT14P20DXTA
ZXT14P20DXTC
DSA0037477
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SC3834 NPN SILICON TRANSISTOR SWITCH NPN TRANSISTOR DESCRIPTION The UTC 2SC3834 is an epitaxial planar type NPN silicon transistor. FEATURES * Humidifier, DC-DC converter, and general purpose ORDERING INFORMATION
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2SC3834
2SC3834
2SC3834L-TA3-T
2SC3834G-TA3-T
O-220
2SC3834L-T3P-T
2SC3834G-T3P-T
QW-R203-026
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TRANSISTOR SMD MARKING CODE 1P
Abstract: smd transistor marking 1p 1P smd transistor SMD TRANSISTOR MARKING 28 smd transistor 1p data smd TRANSISTOR code marking 1P TRANSISTOR SMD MARKING CODE 16 smd transistor code 1p transistor smd 06 smd transistor marking 1p T
Text: SMD General Purpose Transistor NPN MMBT2222A SMD General Purpose Transistor (NPN) Features • NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications • RoHS compliance SOT-23 Mechanical Data Case: SOT-23, Plastic Package Terminals:
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MMBT2222A
OT-23
OT-23,
MIL-STD-202G,
TRANSISTOR SMD MARKING CODE 1P
smd transistor marking 1p
1P smd transistor
SMD TRANSISTOR MARKING 28
smd transistor 1p data
smd TRANSISTOR code marking 1P
TRANSISTOR SMD MARKING CODE 16
smd transistor code 1p
transistor smd 06
smd transistor marking 1p T
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2N4401 transistor
Abstract: 2N4401 NPN Switching Transistor CMLT4413 2N4401 2N4403 NPN, PNP for 500ma, 30v 2n4401 configuration 2N4403 surface mount
Text: Central CMLT4413 TM Semiconductor Corp. SURFACE MOUNT COMPLEMENTARY NPN/PNP SILICON TRANSISTOR SOT-563 CASE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT4413 consists of one isolated 2N4401 NPN silicon transistor and one complementary isolated 2N4403 PNP silicon transistor,
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CMLT4413
OT-563
CMLT4413
2N4401
2N4403
150mA,
2N4401 transistor
2N4401 NPN Switching Transistor
NPN, PNP for 500ma, 30v
2n4401 configuration
2N4403 surface mount
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AA3R
Abstract: 2SB772S V/AA3R
Text: UNISONIC TECHNOLOGIES CO., 2SB772S PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2SB772S is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES
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2SB772S
2SB772S
2SD882S
OT-223
2SB772SL
2SB772S-AA3-R
2SB772SL-AA3-R
OT-223
QW-R207-012
AA3R
V/AA3R
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BD439
Abstract: st bd441 BD441 BD442 JESD97 BD441 an
Text: BD441 NPN power transistor Features • NPN transistor Applications ■ Linear and switching industrial equipment Description This device is manufactured in planar technology with “base island” layout. The resulting transistor shows exceptional high gain performance
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BD441
BD442.
OT-32
BD439
st bd441
BD441
BD442
JESD97
BD441 an
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD TIP122 NPN SILICON TRANSISTOR NPN EPITAXIAL TRANSISTOR DESCRIPTION The UTC TIP122 is a NPN epitaxial transistor, designed for use in general purpose amplifier low-speed switching applications. ORDERING INFORMATION Ordering Number
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TIP122
TIP122
TIP122-T60-K
TIP122L-T60-K
TIP122-TA3-T
TIP122L-TA3-T
TIP122-TF3-T
TIP122L-TF3-T
TIP122-TN3-R
TIP122L-TN3-R
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UDT1605 Preliminary NPN EPITAXIAL SILICON TRANSISTOR 120V NPN SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR DESCRIPTION The UTC UDT1605 is an NPN Darlington transistor. Utilizing UTC’s advanced techonology, UDT1605 features ultra-high DC
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UDT1605
UDT1605
UDT1605G-AB3-R
OT-89
QW-R208-048
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high voltage fast switching npn transistor
Abstract: ULB121
Text: UNISONIC TECHNOLOGIES CO., LTD ULB121 NPN SILICON TRANSISTOR NPN TRIPLE DIFFUSED PLANAR TYPE HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC ULB121 is a medium power transistor designed for use in switching applications. FEATURES * High breakdown voltage
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ULB121
ULB121
ULB121G-TM3-T
O-251
QW-R213-015
high voltage fast switching npn transistor
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SB2202
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD. SB2202 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC SB2202 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator.
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SB2202
SB2202
SB2202L-x-TM3-R
SB2202G-x-TM3-R
SB2202L-x-TN3-T
SB2202G-x-TN3-T
SB2202L-x-TN3-R
SB2202G-x-TN3-R
O-251
O-252
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M54577P
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54577P 7-UNIT 30mA TRANSISTOR ARRAY DESCRIPTION M54577P is seven-circuit transistor arrays. The circuits are made of NPN transistors. The semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply.
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M54577P
M54577P
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2SB772S-T92-B
Abstract: 2SB772S-T92-K 2SD882S 2SB772S 2SB772SL-T92-B 2SB772SL-T92-K transistor T 023
Text: UNISONIC TECHNOLOGIES CO., 2SB772S PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2SB772S is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. 1 FEATURES
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2SB772S
2SB772S
2SD882S
2SB772SL
2SB772S-T92-B
2SB772SL-T92-B
2SB772S-T92-K
2SB772SL-T92-K
QW-R201-023
2SD882S
2SB772SL-T92-B
2SB772SL-T92-K
transistor T 023
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Untitled
Abstract: No abstract text available
Text: OBSOLETE - PLEASE USE ZXTC6720MC ZXTDE4M832 MPPS Miniature Package Power Solutions DUAL 80V NPN & 70V PNP LOW SATURATION TRANSISTOR COMBINATION SUMMARY NPN Transistor PNP Transistor VCEO = 80V; RSAT = 68m ; C = 3.5A VCEO = -70V; RSAT = 117m ; C = -2.5A
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ZXTC6720MC
ZXTDE4M832
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NPN Transistor 600V
Abstract: B528 ULB122
Text: UNISONIC TECHNOLOGIES CO., LTD ULB122 NPN SILICON TRANSISTOR NPN TRIPLE DIFFUSED PLANAR TYPE HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC ULB122 is a medium power transistor designed for use in switching applications. FEATURES * High breakdown voltage
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ULB122
ULB122
ULB122G-xx-TM3-T
O-251
QW-R213-014
NPN Transistor 600V
B528
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