TRANSISTOR 200W Search Results

TRANSISTOR 200W Result Highlights (6)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL
TK7R0E08QM	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB

TRANSISTOR 200W Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
rjh3047 Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055 Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing	Original	PDF	REJ01G0001-0400 rjh3047 rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Untitled Abstract: No abstract text available Text: MMBT3906 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * As complementary type,the NPN transistor MMBT3904 is Recommended * Epitaxial planar die construction SOT-23 COLLECTOR 3 MECHANICAL DATA * * * * * Case: Molded plastic Epoxy: UL 94V-O rate flame retardant	Original	PDF	MMBT3906 OT-23 MMBT3904 OT-23 MIL-STD-202E
125OC Abstract: MMBT3904 MMBT3906 Text: MMBT3906 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * As complementary type,the NPN transistor MMBT3904 is Recommended * Epitaxial planar die construction SOT-23 COLLECTOR 3 MECHANICAL DATA * * * * * Case: Molded plastic Epoxy: UL 94V-O rate flame retardant	Original	PDF	MMBT3906 OT-23 MMBT3904 OT-23 MIL-STD-202E 125OC MMBT3906
200w transistor amplifier circuit Abstract: MMBT2222A MPS2222A mps2222a transistor pin configuration transistor mps2222a Text: ADVANCED INFORMATION MPS2222A SMALL SIGNAL TRANSISTORS NPN TO-92 FEATURES 0.142 (3.6) 0.181 (4.6) min. 0.492 (12.5) 0.181 (4.6) ¨ NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. ¨ On special request, this transistor is	Original	PDF	MPS2222A OT-23 MMBT2222A 200w transistor amplifier circuit MMBT2222A MPS2222A mps2222a transistor pin configuration transistor mps2222a
TO63 package Abstract: NTE71 Text: NTE71 Silicon NPN Transistor High Current Amp, Fast Switch Description: The NTE71 is silicon NPN transistor in a TO63 stud mount package utilizing C2R processing that provides surface stabilization for high voltage operation and enhances long term reliability.	Original	PDF	NTE71 NTE71 TO63 package
MRF660 Abstract: MRF485 KTC1969 MRF150MP MRF496 2SC2029B MRF648 MRF646 MRF429MP MRF648 Data Sheet Text: ButtFuzz' BiPolar RF Transistor Info http://www.smlec.com/cb/rftransistors.htm Transistor 1 av 8 Power Bipolar RF Power Transistors dB Gain dB 28V Voltage Frequency 2N2876 10W 50MHz 2N3137 2N3375 2N3553 2N3632 2N3733 2N3924 2N3926 2N3927 2N3948 2N3966 2N4040	Original	PDF	2N2876 2N3137 2N3375 2N3553 2N3632 2N3733 2N3924 2N3926 2N3927 2N3948 MRF660 MRF485 KTC1969 MRF150MP MRF496 2SC2029B MRF648 MRF646 MRF429MP MRF648 Data Sheet
nte328 Abstract: 25A12 Text: NTE328 Silicon NPN Transistor Power Amp, Switch Description: The NTE328 i a silicon NPN transistor in a TO3 type package designed for use in industrial power amplifier and switching circuit applications. Features: D High Collector–Emitter Sustaining Voltage	Original	PDF	NTE328 NTE328 25A12
marking code 1p Abstract: MMBT2222A MPS2222A 10D4 Text: ADVANCED INFORMATION ADVANCED INFORMATION MMBT2222A SMALL SIGNAL TRANSISTORS NPN SOT-23 FEATURES ¨ NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. .122 (3.1) .118 (3.0) .016 (0.4) Top View ¨ This transistor is also available in the	Original	PDF	MMBT2222A OT-23 MPS2222A. OT-23 marking code 1p MMBT2222A MPS2222A 10D4
transistor 2n4403 equivalent Abstract: NPN switching transistor 2N4403 Transistor 2N4401 2N4401 2N4403 MMBT4403 200w transistor amplifier circuit 2n4401 configuration 2n4401 amplifier transistor 2n4401 equivalent Text: ADVANCED INFORMATION ADVANCED INFORMATION 2N4403 SMALL SIGNAL TRANSISTORS PNP FEATURES TO-92 0.142 (3.6) min. 0.492 (12.5) 0.181 (4.6) 0.181 (4.6) ¨ PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. ¨ As complementary type, the NPN transistor	Original	PDF	2N4403 2N4401 OT-23 MMBT4403. 100ms transistor 2n4403 equivalent NPN switching transistor 2N4403 Transistor 2N4401 2N4403 MMBT4403 200w transistor amplifier circuit 2n4401 configuration 2n4401 amplifier transistor 2n4401 equivalent
NTE327 Abstract: transistor NTE327 Text: NTE327 Silicon NPN Transistor Power Amp, Switch Description: The NTE327 is a silicon NPN transistor in a TO3 type package designed for use in industrial amplifier and switching circuit applications. Features: D High Collector–Emitter Sustaining Voltage D High DC Current Gain	Original	PDF	NTE327 NTE327 transistor NTE327
Untitled Abstract: No abstract text available Text: Part Number: Integra ILD1214EL200 TECHNOLOGIES, INC. L-Band RF Power LDMOS Transistor Silicon LDMOS  High Power Gain  Superior Thermal Stability The high power pulsed transistor part number ILD1214EL200 is designed for L-Band systems operating at 1.215–1.400 GHz. Operating at a pulse width of 16ms	Original	PDF	ILD1214EL200 ILD1214EL200 ILD1214EL200-REV-NC-DS-REV-NC
Untitled Abstract: No abstract text available Text: DU2820S RF Power MOSFET Transistor 200W, 2-175MHz, 28V M/A-COM Products Released; RoHS Compliant Package Outline Features • • • • • N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation High saturated output power	Original	PDF	DU2820S 2-175MHz,
Untitled Abstract: No abstract text available Text: DU28200M RF Power MOSFET Transistor 200W, 2-175MHz, 28V M/A-COM Products Released; RoHS Compliant Package Outline Features • • • • • N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation High saturated output power	Original	PDF	DU28200M 2-175MHz,
Untitled Abstract: No abstract text available Text: VRF161 MP 50V, 200W, 150MHz RF POWER VERTICAL MOSFET The VRF161 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation	Original	PDF	VRF161 150MHz 30MHz, 150MHz, MRF151

MOSFET J140 Abstract: DU2820S 200w Transistor transistor 200w RF POWER MOSFET TRANSISTOR 100MHz Text: DU2820S RF Power MOSFET Transistor 200W, 2-175MHz, 28V M/A-COM Products Released; RoHS Compliant Package Outline Features • • • • • N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation High saturated output power	Original	PDF	DU2820S 2-175MHz, MOSFET J140 DU2820S 200w Transistor transistor 200w RF POWER MOSFET TRANSISTOR 100MHz
PSMN040-200W Abstract: PSMN040200W Text: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES PSMN040-200W SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance d VDSS = 200 V ID = 50 A	Original	PDF	PSMN040-200W OT429 PSMN040-200W PSMN040200W
VK200-4B Abstract: No abstract text available Text: VRF161 MP 50V, 200W, 150MHz RF POWER VERTICAL MOSFET The VRF161 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation	Original	PDF	VRF161 150MHz 30MHz, 150MHz, MRF151 VK200-4B
2sb504 Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52 Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle	OCR Scan	PDF
2N2222A 338 Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK	OCR Scan	PDF	2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
y51 h 120c Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK	OCR Scan	PDF	500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
200W PUSH-PULL Abstract: BAL0102-150 200w Transistor Text: GAE GREAT AMERICAN ELECTROINCS BAL0102-150 Silicon NPN high power VHF transistor BAL0102-150 transistor assembly is designed for wideband push-pull power amplifiers required in AM or FM communication equipment (100-200 Mhz frequency range). Output Power:	OCR Scan	PDF	BAL0102-150 OT-161 002c1 200W PUSH-PULL BAL0102-150 200w Transistor
PSMN040-200W Abstract: No abstract text available Text: Philips Semiconductors Objective specification TrenchMOS transistor FEATURES • • • • • PSMN040-200W SYMBOL QUICK REFERENCE DATA ’Trench’ technology Very low on-state resistance Fast switching High thermal cycling performance Low thermal resistance	OCR Scan	PDF	PSMN040-200W PSMN040-200W OT429 T0247)
2SA495 Abstract: sk a 3050 c 2SC373 2SA495-Y 2SA495Y 2SC372 transistor 2sc373 transistor 2SC372 2sa495 toshiba 2SA495G Text: SILICON PNP EPITAXIAL TRANSISTOR PCT 2SA PROCESS , ii ° High Frequency Amplifier ° High Speed Switching Applications 2SC372 2SC373 @ t ^ > T- ') * 's * a : fT = : VcE(sat) A -f y *S- -S Complementary INDUSTRIAL APPLICATIONS Applications = 200Wiz -0.2V (Typ.)	OCR Scan	PDF	3SC37Z 2SC373 200WIz 250ns 2SC372Â 2SC373Â 2sa495g 2SA495 sk a 3050 c 2SC373 2SA495-Y 2SA495Y 2SC372 transistor 2sc373 transistor 2SC372 2sa495 toshiba 2SA495G
2sc2652 Abstract: 2-13B1A 200WPEP Text: TOSHIBA 2SC2652 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2652 Unit in mm 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS. 50V SUPPLY VOLTAGE USE Specified 50V, 28MHz Characteristics Output Power Po = 200WpEP Power Gain Gp = 13dB (Min.) Collector Efficiency	OCR Scan	PDF	2SC2652 30MHz 28MHz 200WpEP --30dB 2-13B1A 100mA, 1S1555 961001EAA2' 2sc2652

TRANSISTOR 200W Search Results

TRANSISTOR 200W Result Highlights (6)

TRANSISTOR 200W Datasheets Context Search

rjh3047

Untitled

125OC

200w transistor amplifier circuit

TO63 package

MRF660

nte328

marking code 1p

transistor 2n4403 equivalent

NTE327

Untitled

Untitled

Untitled

Untitled

MOSFET J140

PSMN040-200W

VK200-4B

2sb504

2N2222A 338

y51 h 120c

200W PUSH-PULL

PSMN040-200W

2SA495

2sc2652