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    TRANSISTOR 200V 4A NPN Search Results

    TRANSISTOR 200V 4A NPN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 200V 4A NPN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2sc2233

    Abstract: No abstract text available
    Text: SILICON PLASTIC POWER TRANSISTOR NPN 2SC2233 4A 40W Technical Data …designed for use in B/W TV horizontal deflection output. F Collector-Base Voltage: VCBO=200V F DC Current Gain: 20 @ IC=4A F TO-220 Package MAXIMUM RATINGS Rating Symbol Value Unit Collector- Emitter Voltage


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    PDF 2SC2233 O-220 Characteris70 2sc2233

    transistor Ic 4A NPN

    Abstract: KSC2233 Collector 5v npn TRANSISTOR
    Text: KSC2233 NPN EPITAXIAL SILICON TRANSISTOR B/W TV HORIZONTAL DEFLECTION OUTPUT TO-220 • Collector-Base Voltage : VCBO = 200V • Collector Current D.C : IC = 4A • Collector Dissipation : PC = 40W ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Collector-Base Voltage


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    PDF KSC2233 O-220 transistor Ic 4A NPN KSC2233 Collector 5v npn TRANSISTOR

    KSC2233

    Abstract: No abstract text available
    Text: KSC2233 KSC2233 B/W TV Horizontal Deflection Output • Collector-Base Voltage : VCBO = 200V • Collector Current DC : IC = 4A • Collector Dissipation : PC = 40W TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted


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    PDF KSC2233 O-220 KSC2233

    ZTX855

    Abstract: VCB-200V DSA003778
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX855 ELECTRICAL CHARACTERISTICS at Tamb = 25°C MIN. TYP. MAX. UNIT CONDITIONS. 0.88 1 V IC=4A, VCE=5V* PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) Static Forward Current Transfer Ratio


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    PDF ZTX855 100mA, 50MHz 100mA Am100 100ms ZTX855 VCB-200V DSA003778

    Untitled

    Abstract: No abstract text available
    Text: , Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BUV42 SILICON NPN SWITCHING TRANSISTOR FAST SWITCHING TIMES LOW SWITCHING LOSSES VERY LOW SATURATION VOLTAGE AND HIGH GAIN FOR REDUCED LOAD


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    PDF BUV42

    BUV42

    Abstract: BB 555 pbas P003N
    Text: BUV42 SILICON NPN SWITCHING TRANSISTOR n n n n SGS-THOMSON PREFERRED SALESTYPE FAST SWITCHING TIMES LOW SWITCHING LOSSES VERY LOW SATURATION VOLTAGE AND HIGH GAIN FOR REDUCED LOAD OPERATION 1 2 TO-3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symb ol


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    PDF BUV42 BUV42 BB 555 pbas P003N

    transistor TC-10

    Abstract: 2SD1789 ic ax 1 TP4L20 ITO-220 TC 100 ax
    Text: SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SD1789 Case : ITO-220 TP4L20 Unit : mm 4A NPN RATINGS œAbsolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage


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    PDF 2SD1789 ITO-220 TP4L20) transistor TC-10 2SD1789 ic ax 1 TP4L20 ITO-220 TC 100 ax

    ITO-220

    Abstract: TP4L20 2SD1789 AX12M
    Text: SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SD1789 Case : ITO-220 TP4L20 Unit : mm 4A NPN RATINGS œAbsolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage


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    PDF 2SD1789 ITO-220 TP4L20) ITO-220 TP4L20 2SD1789 AX12M

    2SD1789

    Abstract: ITO-220 TP4L20 2sD1789 transistor
    Text: SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SD1789 Case : ITO-220 TP4L20 Unit : mm ± 4A NPN RATINGS ●Absolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage


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    PDF 2SD1789 ITO-220 TP4L20) 2SD1789 ITO-220 TP4L20 2sD1789 transistor

    Untitled

    Abstract: No abstract text available
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX855 ISSUE 2 – MARCH 94 FEATURES * 150 Volt VCEO * 4 Amps continuous current * Up to 10 Amps peak current * Very low saturation voltage * Ptot= 1.2 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS.


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    PDF ZTX855 po100 100ms

    2SD5072

    Abstract: 2sd5072 equivalent NPN POWER TRANSISTOR 2SD5072 2SD5072 transistor TV power transistor datasheet transistor 800V 1A transistor 2sd5072 2sd507 transistor Ic 4A NPN transistor 800v
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD5072 DESCRIPTION •High Breakdown Voltage: VCBO= 1500V Min ·High Switching Speed ·High Reliability ·Built-in Damper Diode APPLICATIONS ·Designed for color TV horizontal output applications


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    PDF 2SD5072 2SD5072 2sd5072 equivalent NPN POWER TRANSISTOR 2SD5072 2SD5072 transistor TV power transistor datasheet transistor 800V 1A transistor 2sd5072 2sd507 transistor Ic 4A NPN transistor 800v

    KSD5072

    Abstract: NPN Triple Diffused Planar Silicon Transistor KSD5702 transistor npn 1A Collector Current transistor Ic 4A NPN transistor Ic 1A NPN transistor 800V 1A C25 on npn transistor vceo 800v ksd50
    Text: NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSD5702 COLOR TV HORIZONTAL OUTPUT APPLICATION DAMPER DIODE BUILT IN TO-3PF • High Collector-Base Voltage (VCBO=1500V) • High Switching Speed (tf. max=0.4uS) ABSOLUTE MIXIMUM RATING Rating Unit Collector Base Voltage


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    PDF KSD5702 KSD5072 KSD5072 NPN Triple Diffused Planar Silicon Transistor KSD5702 transistor npn 1A Collector Current transistor Ic 4A NPN transistor Ic 1A NPN transistor 800V 1A C25 on npn transistor vceo 800v ksd50

    2SC3466

    Abstract: No abstract text available
    Text: Ordering number:EN2487A NPN Triple Diffused Planar Type Silicon Transistor 2SC3466 Switching Regulator Applications Features Package Dimensions • High breakdown voltage and high reliability. · Fast switching speed. · Wide ASO. unit:mm 2022A [2SC3466] 1 : Base


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    PDF EN2487A 2SC3466 2SC3466] 2SC3466

    NPN Transistor 1500V

    Abstract: TV power transistor datasheet KSD5066 ksd50 horizontal transistor
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor KSD5066 DESCRIPTION •High Breakdown Voltage: VCBO= 1500V Min ·High Switching Speed ·High Reliability APPLICATIONS ·Designed for color TV horizontal output applicaitions


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    PDF KSD5066 NPN Transistor 1500V TV power transistor datasheet KSD5066 ksd50 horizontal transistor

    Untitled

    Abstract: No abstract text available
    Text: KSC2233 NPN EPITAXIAL SILICON TRANSISTOR B/W TV HORIZONTAL DEFLECTION OUTPUT • C ollector-Base Voltage : V Cao ~ 200V • Collector Current D .C : lc = 4A • Collector Dissipation : P c = 40W ABSOLUTE MAXIMUM RATINGS C h a ra cte ristic Collector-Base Voltage


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    PDF KSC2233

    Untitled

    Abstract: No abstract text available
    Text: KSC2233 NPN EPITAXIAL SILICON TRANSISTOR B/W TV HORIZONTAL DEFLECTION OUTPUT • C ollector-B ase Voltage: V Cb o = 200V • C ollector C urrent D.C : lc = 4A • C ollecto r D issipation: P c = 40W ABSOLUTE MAXIMUM RATINGS C haracteristic Sym bol Rating


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    PDF KSC2233

    Untitled

    Abstract: No abstract text available
    Text: NPN EPITAXIAL SILICON TRANSISTOR KSC2233 B/W TV HORIZONTAL DEFLECTION OUTPUT TO -2 20 • Collector-B ase Voltage: VCBo=200V • C o llecto r Current D.C : lc =4A • C o llecto r D issipation: P C=40W ABSOLUTE MAXIMUM RATINGS Characteristic Sym bol Rating


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    PDF KSC2233

    BUV42

    Abstract: No abstract text available
    Text: rrz ^ 7# SGS-THOMSON QjaniBiB@igugigir^ ieieg_ B U V 4 2 SILICON NPN SWITCHING TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . FAST SWITCHING TIMES . LOW SWITCHING LOSSES . VERY LOW SATURATION VOLTAGE AND HIGH GAIN FOR REDUCED LOAD OPERATION


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    PDF BUV42 0DbS335 GDbS33b BUV42

    KSD5001

    Abstract: KSD5002 tv samsung samsung tv T 33 16AF
    Text: SAMSUNG SEMICO NDU CTO R 1ME D INC | Q 0 0 ?b 3 fl 7 I NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSD5001 T-33-1 3 COLOR TV HORIZONTAL OUTPUT APPLICATIONS DAMPER DIODE BUILT IN HIGH Collector-fiaM Voltage' Vcao=1500V ABSOLUTE MAXIMUM RATINGS (Ta= 25° C)


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    PDF KSD5001 71b4142 T-33-I -55-M150 KSD5002 KSD5001 KSD5002 tv samsung samsung tv T 33 16AF

    Untitled

    Abstract: No abstract text available
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ISSU E 2 - MARCH 94_ FE A T U R E S * 150 Volt Vc 'C E O * * * 4 Am ps continuous current Up to 10 Am ps peak current Very low saturation voltage * Ptot= 1.2 Watt


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    PDF 100mA, 50MHz 100mA 300ns. ZTX855

    Untitled

    Abstract: No abstract text available
    Text: I Ordering number: EN2471A 2SC4106 N0.247IA NPN Triple Diffused Planar Silicon Transistor 400V/7A Switching Regulator Applications Features . . . . High breakdown voltage and high reliability Fast switching speed Wide ASO Adoption of MBIT process Absolute Maxim» Ratings at Ta=25°C


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    PDF EN2471A 2SC4106 247IA 00V/7A 1000m 900mA 800mA 600mA H707b

    Untitled

    Abstract: No abstract text available
    Text: Ordering number: EN 2475 B _ 2SC4110 NPN Triple Diffused Planar Silicon Transistor 400V/25A Switching Regulator Applications Features . High breakdown voltage and high reliability . Fast switching speed . Wide ASO . Adoption of MBIT process Absolute Maxima Ratings at Ta=25°C


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    PDF 2SC4110 00V/25A H707b

    Untitled

    Abstract: No abstract text available
    Text: Ordering number: EN2473A 2SC4108 NPN Triple Diffused Planar Silicon Transistor 4 0 0 V /1 2 A Sw itching R egulator A pplications Features . High breakdown voltage and high reliability . Fast switching speed . Wide ASO . Adoption of MBIT process Absolute Maxjjmim Ratings at Ta=25°C


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    PDF EN2473A 2SC4108 cycled10Ã 500pH, 2000m 1800mA-^ 1600mA. 1200mA

    lg08a

    Abstract: No abstract text available
    Text: NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSD5072 COLOR TV HORIZONTAL OUTPUT APPLICATION DAMPER DIODE BUILT IN TO-3PF High Collector-Base Voltage(VCBO=1500V) ' High Switching Speed(tf m ax=0.4|is) ABSOLUTE MIXIMUM RATING Characteristic Collector Base Voltage


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    PDF KSD5072 500pH lg08a