SSSMini3-F2-B
Abstract: Mini3-G3-B DSC9005 SMini3-F2-B DSA3005 DSCF005 130010 TRANSISTOR
Text: New transistor series with fine patterning process technology 50V/200mA General Transistor Series Overview This series is the Panasonic’s new eco-friendly 50V/200mA transistors series for general use achieved with fine patterning process technology. Added ML3 to the package lineup, this series contribute to the miniaturization of customers' products.
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0V/200mA
200mA
SC-85)
SC-89)
75max
SSSMini3-F2-B
Mini3-G3-B
DSC9005
SMini3-F2-B
DSA3005
DSCF005
130010 TRANSISTOR
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Untitled
Abstract: No abstract text available
Text: MMBTSA2018 PNP Silicon Epitaxial Planar Transistor Low Frequency Transistor for switching and muting applications. Features: •A collector current is large. •Collector saturation voltage is low. SOT-23 Plastic Package -VCE sat : 250mV(Max.) at -IC=200mA/-IB=10mA
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MMBTSA2018
OT-23
250mV
200mA/-IB
200mA,
100MHz
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Untitled
Abstract: No abstract text available
Text: MMBTSA2018 PNP Silicon Epitaxial Planar Transistor Low Frequency Transistor for switching and muting applications. Features: ‧A collector current is large. ‧Collector saturation voltage is low. SOT-23 Plastic Package -VCE sat : 250mV(Max.) at -IC=200mA/-IB=10mA
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MMBTSA2018
OT-23
250mV
200mA/-IB
200mA,
100MHz
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sot23 marking 1AM
Abstract: sot 23 marking code 1AM MMBT3904 transistor 1am sot-23 Marking 1am 1am sot-23 1AM marking transistor MV TRANSISTOR SOT23 1aM sot-23 transistor 1AM transistor
Text: BL Galaxy Electrical Production specification NPN SWITCHING TRANSISTOR FEATURES z Epitaxial planar die construction. z Complementary PNP type available MMBT3904 Pb Lead-free MMBT3906 . z Collector Current Capability Ic=200mA. z Collector-emitter Voltage VCEO=40V.
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MMBT3904
MMBT3906)
200mA.
OT-23
BL/SSSTC061
sot23 marking 1AM
sot 23 marking code 1AM
MMBT3904
transistor 1am
sot-23 Marking 1am
1am sot-23
1AM marking transistor
MV TRANSISTOR SOT23
1aM sot-23 transistor
1AM transistor
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Untitled
Abstract: No abstract text available
Text: MMBT3906Z -200 mA, -40 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES SOT-923 Collector current capability IC= -200mA Collector-emitter voltage VCEO= -40V.
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MMBT3906Z
OT-923
-200mA
-10mAdc,
-10mAdc
21-Aug-2012
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KTA2012V TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. FEATURES ・A Collector Current is Large. ・Collector Saturation Voltage is low. : VCE sat ≤-250mV at IC=-200mA/IB=-10mA. ・Complementary to KTC4072V. MAXIMUM RATING (Ta=25℃)
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KTA2012V
-250mV
-200mA/IB
-10mA.
KTC4072V.
-200mA,
-10mA
-10mA,
100MHz
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KTA2012E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. FEATURES ・A Collector Current is Large. ・Collector Saturation Voltage is low. : VCE sat ≤-250mV at IC=-200mA/IB=-10mA. ・Complementary to KTC4072E. MAXIMUM RATING (Ta=25℃)
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KTA2012E
-250mV
-200mA/IB
-10mA.
KTC4072E.
-200mA,
-10mA
-10mA,
100MHz
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Untitled
Abstract: No abstract text available
Text: MMDT3946 COMPLEMENTARY NPN / PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40 Volts 200 mWatts POWER FEATURES • Epitaxial silicon, planar design • Collector-emitter voltage VCE = 40V • Collector current IC = 200mA • Pb free product : Sn meet RoHS environment
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MMDT3946
200mA
OT-363,
MIL-STD-750,
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MMBT3906_R2_00001
Abstract: No abstract text available
Text: MMBT3906 PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 225 mWatts POWER 40 Volts SOT-23 Unit：inch mm FEATURES • PNP epitaxial silicon, planar design 0.120(3.04) • Collector-emitter voltage VCE = -40V 0.110(2.80) • Collector current IC = -200mA
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MMBT3906
OT-23
-200mA
2011/65/EU
IEC61249
OT-23,
MIL-STD-750,
MMBT3906_R2_00001
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MMBT3906
Abstract: MMBT3906_R1_00001 MMBT3906R
Text: MMBT3906 PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 225 mWatts POWER 40 Volts SOT-23 Unit：inch mm FEATURES • PNP epitaxial silicon, planar design 0.120(3.04) • Collector-emitter voltage VCE = -40V 0.110(2.80) • Collector current IC = -200mA
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MMBT3906
-200mA
2002/95/EC
IEC61249
OT-23
OT-23,
MIL-STD-750,
MMBT3906
MMBT3906_R1_00001
MMBT3906R
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Untitled
Abstract: No abstract text available
Text: MMBT3906 PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 225 mWatts POWER 40 Volts SOT-23 Unit：inch mm FEATURES • PNP epitaxial silicon, planar design 0.120(3.04) • Collector-emitter voltage VCE = -40V 0.110(2.80) • Collector current IC = -200mA
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MMBT3906
OT-23
-200mA
2002/95/EC
IEC61249
OT-23,
MIL-STD-750,
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors BC857S Multi-Chip TRANSISTOR PNP SOT-363 FEATURES Power dissipation C1 PCM : 300mW(Ta=25℃) B2 E2 Collector current ICM : -200mA Collector-base voltage V(BR)CBO : -50V
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OT-363
BC857S
OT-363
300mW
-200mA
-10mA
-100mA
-10mA
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Untitled
Abstract: No abstract text available
Text: MMBT3906 PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 225 mWatts POWER 40 Volts FEATURES • PNP epitaxial silicon, planar design • Collector-emitter voltage VCE = -40V • Collector current IC = -200mA • In compliance with EU RoHS 2002/95/EC directives
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MMBT3906
-200mA
2002/95/EC
OT-23,
MIL-STD-750,
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KTA2012E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. FEATURES E ᴌA Collector Current is Large. B ᴌCollector Saturation Voltage is low. : VCE sat ᴪ-250mV at IC=-200mA/IB=-10mA. D G A 2 C H ᴌComplementary to KTC4072E.
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KTA2012E
-250mV
-200mA/IB
-10mA.
KTC4072E.
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1N916
Abstract: MMBT3906
Text: MMBT3906 PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 225 mWatts POWER 40 Volts FEATURES • PNP epitaxial silicon, planar design • Collector-emitter voltage VCE = -40V • Collector current IC = -200mA • In compliance with EU RoHS 2002/95/EC directives
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MMBT3906
-200mA
2002/95/EC
OT-23,
MIL-STD-750,
1N916
MMBT3906
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MMDT3946
Abstract: No abstract text available
Text: MMDT3946 COMPLEMENTARY NPN / PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40 Volts POWER 200 mWatts FEATURES • Epitaxial silicon, planar design • Collector-emitter voltage VCE = 40V • Collector current IC = 200mA • In compliance with EU RoHS 2002/95/EC directives
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MMDT3946
200mA
2002/95/EC
300MHz
100MHz
OT-363,
MIL-STD-750,
MMDT3946
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MMBT3906
Abstract: No abstract text available
Text: MMBT3906 -200 mA, -40 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES • • SOT-23 Collector current capability IC=-200mA Collector-emitter voltage VCEO=-40V.
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MMBT3906
OT-23
-200mA
30-Aug-2010
MMBT3906
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KTA2012V TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. FEATURES E ᴌA Collector Current is Large. B ᴌCollector Saturation Voltage is low. : VCE sat ᴪ-250mV at IC=-200mA/IB=-10mA. G H A D 2 ᴌComplementary to KTC4072V.
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KTA2012V
-250mV
-200mA/IB
-10mA.
KTC4072V.
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KTA2012E
Abstract: KTC4072E
Text: SEMICONDUCTOR KTA2012E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. FEATURES E ᴌA Collector Current is Large. B ᴌCollector Saturation Voltage is low. : VCE sat ᴪ-250mV at IC=-200mA/IB=-10mA. D H G A 2 ᴌComplementary to KTC4072E.
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KTA2012E
-250mV
-200mA/IB
-10mA.
KTC4072E.
KTA2012E
KTC4072E
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KTA2012E
Abstract: KTC4072E
Text: SEMICONDUCTOR KTA2012E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. FEATURES E ᴌA Collector Current is Large. B ᴌCollector Saturation Voltage is low. : VCE sat ᴪ-250mV at IC=-200mA/IB=-10mA. D H G A 2 ᴌComplementary to KTC4072E.
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KTA2012E
-250mV
-200mA/IB
-10mA.
KTC4072E.
KTA2012E
KTC4072E
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s2A SOT23
Abstract: No abstract text available
Text: MMBT3906-AU PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 225 mWatts POWER 40 Volts SOT-23 Unit：inch mm FEATURES • PNP epitaxial silicon, planar design 0.120(3.04) • Collector-emitter voltage VCE = -40V 0.110(2.80) • Collector current IC = -200mA
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MMBT3906
-200mA
TS16949
AECQ101
2002/95/EC
IEC61249
OT-23
OT-23,
MIL-STD-750,
s2A SOT23
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KTA702E
Abstract: KTC802E
Text: SEMICONDUCTOR KTA702E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES -250mV at IC=-200mA/IB=-10mA. C A : VCE sat 1 6 2 5 3 4 D Complementary to KTC802E. P ) SYMBOL RATING UNIT Collector-Base Voltage
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KTA702E
-250mV
-200mA/IB
-10mA.
KTC802E.
KTA702E
KTC802E
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D07 15
Abstract: to-126 transistor TSB772CK TSB772 TSD882
Text: TSB772 Low Vcesat PNP Transistor TO-126 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Collector 3. Base BVCBO -50V BVCEO -30V IC -3A VCE SAT Features ● ● Ordering Information Low VCE(SAT) -0.3 @ IC / IB = 2A / 200mA (Typ.) Complementary part with TSD882
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TSB772
O-126
200mA
TSD882
TSB772CK
-200mA
250pcs
D07 15
to-126 transistor
TSB772
TSD882
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KTA702E
Abstract: KTC802E
Text: SEMICONDUCTOR KTA702E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES C A : VCE sat ᴪ-250mV at IC=-200mA/IB=-10mA. 1 6 2 5 3 4 D ᴌComplementary to KTC802E. P RATING UNIT Collector-Base Voltage
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KTA702E
-250mV
-200mA/IB
-10mA.
KTC802E.
KTA702E
KTC802E
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