Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BUJ105AB Silicon Diffused Power Transistor Product specification October 2001 NXP Semiconductors Product specification Silicon Diffused Power Transistor BUJ105AB GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in SOT404 D2-PAK surface-mount
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BUJ105AB
OT404
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BUJ105AB Silicon Diffused Power Transistor Product specification October 2001 NXP Semiconductors Product specification Silicon Diffused Power Transistor BUJ105AB GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in SOT404 D2-PAK surface-mount
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BUJ105AB
BUJ105AB
OT404
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ADE-208-1439A
Abstract: 2SC5700 2SC5757 HTT1115E DSA003640 hitachi ic
Text: HTT1115E Silicon NPN Epitaxial Twin Transistor ADE-208-1439A Z Rev.1 Aug. 2001 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm) Q1: Equivalent Buffer transistor Q2: Equivalent OSC transistor 2SC5700
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HTT1115E
ADE-208-1439A
2SC5700
2SC5757
D-85622
D-85619
ADE-208-1439A
2SC5700
2SC5757
HTT1115E
DSA003640
hitachi ic
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smd transistor marking SL6
Abstract: SMD MARKING CODE hitachi SMD MARKING CODE sg 6533 SMD smd diode marking sG TRANSISTOR HK SMD hitachi transistor marking sg smd code SMD code E2 2SC5700
Text: HTT1213E Silicon NPN Epitaxial Twin Transistor ADE-208-1449 Z Preliminary Rev. 0 Aug. 2001 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm) Q1: Equivalent Buffer Transistor Q2: Equivalent OSC Transistor
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HTT1213E
ADE-208-1449
2SC5700
D-85622
D-85619
smd transistor marking SL6
SMD MARKING CODE hitachi
SMD MARKING CODE sg
6533 SMD
smd diode marking sG
TRANSISTOR HK SMD
hitachi transistor marking
sg smd code
SMD code E2
2SC5700
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smd transistor marking SL6
Abstract: SMD MARKING CODE hitachi SMD MARKING CODE sg 2SC5700 2SC5757 HTT1115S MARKING CODE SMD IC DSA003640 Hitachi DSA003640
Text: HTT1115S Silicon NPN Epitaxial Twin Transistor ADE–208–1440C Z Rev.3 Aug. 2001 Features • Include 2 transistors in a small size SMD package: SMFPAK–6(6 Leads: 1.5 x 1.1 x 0.55 mm) Q1: Equivalent Buffer transistor Q2: Equivalent OSC transistor 2SC5700
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HTT1115S
1440C
2SC5700
2SC5757
D-85622
D-85619
smd transistor marking SL6
SMD MARKING CODE hitachi
SMD MARKING CODE sg
2SC5700
2SC5757
HTT1115S
MARKING CODE SMD IC
DSA003640
Hitachi DSA003640
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smd transistor marking SL6
Abstract: SMD MARKING CODE hitachi HTT1213S marking code s21 SMD Transistor marking code e2 SMD Transistor SMD MARKING CODE sg 2SC5700 Hitachi transistor MARKING CODE SMD IC TRANSISTOR SMD fr
Text: HTT1213S Silicon NPN Epitaxial Twin Transistor ADE-208-1448 Z Preliminary Rev. 0 Aug. 2001 Features • Include 2 transistors in a small size SMD package: SMFPAK–6 (6 Leads: 1.5 x 1.1 x 0.55 mm) Q1: Equivalent Buffer Transistor Q2: Equivalent OSC Transistor
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HTT1213S
ADE-208-1448
2SC5700
D-85622
D-85619
smd transistor marking SL6
SMD MARKING CODE hitachi
HTT1213S
marking code s21 SMD Transistor
marking code e2 SMD Transistor
SMD MARKING CODE sg
2SC5700
Hitachi transistor
MARKING CODE SMD IC
TRANSISTOR SMD fr
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D1486
Abstract: 2SC4342
Text: DATA SHEET SILICON POWER TRANSISTOR 2SC4342 PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR HIGH-SPEED SWITCHING ORDERING INFORMATION The 2SC4342 is a high-speed Darlington power transistor. This transistor is ideal for high-precision control such as PWM
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2SC4342
2SC4342
O-126
D1486
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D1485
Abstract: 2SA1720
Text: DATA SHEET DARLINGTON POWER TRANSISTOR 2SA1720 PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR HIGH-SPEED SWITCHING ORDERING INFORMATION The 2SA1720 is a high-speed Darlington power transistor. This transistor is ideal for high-precision control such as PWM
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2SA1720
2SA1720
O-220
D1485
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transistor sc 308
Abstract: DTA143EE SMD310
Text: DTA143EE Product Preview Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 2 The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base
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DTA143EE
DTA143EE
416/SC
r14525
DTA143EE/D
transistor sc 308
SMD310
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nec 620
Abstract: 2SD1582 hFE transistor high hfe transistor
Text: DATA SHEET SILICON TRANSISTOR 2SD1582 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS The 2SD1582 is a single type super high hFE transistor and low PACKAGE DRAWING UNIT: mm collector saturation voltage and high voltage. This transistor is
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2SD1582
2SD1582
nec 620
hFE transistor
high hfe transistor
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transistor sc 308
Abstract: DTC114TE SMD310
Text: DTC114TE Product Preview Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 2 The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base
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DTC114TE
DTC114TE
416/SC
r14525
DTC114TE/D
transistor sc 308
SMD310
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2SA1743
Abstract: C11531E
Text: DATA SHEET SILICON POWER TRANSISTOR 2SA1743 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1743 is a power transistor developed for high-speed PACKAGE DRAWING UNIT: mm switching and features a high hFE at low VCE(sat). This transistor is
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2SA1743
2SA1743
C11531E
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2SD1581
Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR 2SD1581 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS The 2SD1581 is a single type super high hFE transistor and low PACKAGE DRAWING UNIT: mm collector saturation voltage and low power loss. This transistor is
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2SD1581
2SD1581
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2SA1742
Abstract: No abstract text available
Text: DATA SHEET SILICON POWER TRANSISTOR 2SA1742 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1742 is a power transistor developed for high-speed ORDERING INFORMATION switching and features a high hFE at low VCE sat . This transistor is ideal
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2SA1742
2SA1742
O-220
O-220)
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2SC4550
Abstract: No abstract text available
Text: DATA SHEET SILICON POWER TRANSISTOR 2SC4550 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4550 is a power transistor developed for high-speed PACKAGE DRAWING UNIT: mm switching and features low VCE(sat) and high hFE. This transistor is
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2SC4550
2SC4550
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NEC 2sc4552
Abstract: 2SC4552
Text: DATA SHEET SILICON POWER TRANSISTOR 2SC4552 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4552 is a power transistor developed for high-speed PACKAGE DRAWING UNIT: mm switching and features low VCE(sat) and high hFE. This transistor is
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2SC4552
2SC4552
NEC 2sc4552
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D1615
Abstract: transistor ab2 12
Text: DATA SHEET SILICON TRANSISTOR 2SD2425 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SD2425 is a transistor featuring high current capacitance in small dimension. PACKAGE DRAWING UNIT: mm This transistor is ideal for
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2SD2425
2SD2425
2SB1578
C11531E)
D1615
transistor ab2 12
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2SD2402
Abstract: transistor 2sD2402 Transistor Marking EY
Text: DATA SHEET SILICON TRANSISTOR 2SD2402 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SD2402 is a transistor featuring high current capacitance in small dimension. PACKAGE DRAWING UNIT: mm This transistor is ideal for
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2SD2402
2SD2402
2SB1571
transistor 2sD2402
Transistor Marking EY
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Untitled
Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR 2SD2403 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SD2403 is a transistor featuring high current capacitance in small dimension. PACKAGE DRAWING UNIT: mm This transistor is ideal for
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2SD2403
2SD2403
2SB1572
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2SB1453
Abstract: NEC 2SB1453
Text: DATA SHEET SILICON TRANSISTOR 2SB1453 PNP SILICON EPITAXIAL POWER TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SB1453 is a power transistor that can directly drive from PACKAGE DRAWING UNIT: mm the IC output. This transistor is ideal for motor drivers and solenoid
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2SB1453
2SB1453
NEC 2SB1453
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D1316
Abstract: 2SA1744
Text: DATA SHEET SILICON POWER TRANSISTOR 2SA1744 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1744 is a power transistor developed for high-speed PACKAGE DRAWING UNIT: mm switching and features a high hFE at Low VCE(sat). This transistor is
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2SA1744
2SA1744
D1316
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2SC4551
Abstract: No abstract text available
Text: DATA SHEET SILICON POWER TRANSISTOR 2SC4551 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4551 is a power transistor developed for high-speed PACKAGE DRAWING UNIT: mm switching and features low VCE(sat) and high hFE. This transistor is
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2SC4551
2SC4551
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NEC RELAY
Abstract: No abstract text available
Text: DATA SHEET DARLINGTON POWER TRANSISTOR 2SD2163 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED HIGH-CURRENT SWITCHING The 2SD2163 is a mold power transistor developed for lowspeed high-current switching. This transistor is ideal for direct
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2SD2163
2SD2163
NEC RELAY
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transistor sc 308
Abstract: DTC114YE SMD310
Text: ON Semiconductort DTC114YE Product Preview Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 2 1 The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base
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DTC114YE
DTC114YE
416/SC
r14525
DTC114YE/D
transistor sc 308
SMD310
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