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    TRANSISTOR 20 DB Search Results

    TRANSISTOR 20 DB Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 20 DB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C3691

    Abstract: C3692 C36916 C369 transistor C36925 transistor C369 C369 BC369 marking code 43a bc369 equivalent
    Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D186 BC369 PNP medium power transistor; 20 V, 1 A Product data sheet Supersedes data of 2003 Nov 20 2004 Nov 05 NXP Semiconductors Product data sheet PNP medium power transistor; 20 V, 1 A BC369 FEATURES


    Original     		PDF M3D186 BC369 BC369-16 250tion R75/05/pp12 C3691 C3692 C36916 C369 transistor C36925 transistor C369 C369 BC369 marking code 43a bc369 equivalent

    MAM287

    Abstract: BC368 BC868 BCP68 BCP68-25 BCP69 SC-73 marking Code philips
    Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D087 BCP68 NPN medium power transistor; 20 V, 1 A Product specification Supersedes data of 1999 Apr 08 2003 Nov 25 Philips Semiconductors Product specification NPN medium power transistor; 20 V, 1 A BCP68


    Original     		PDF M3D087 BCP68 SCA75 R75/04/pp12 MAM287 BC368 BC868 BCP68 BCP68-25 BCP69 SC-73 marking Code philips

    BCP68

    Abstract: BCP69 BCP69-16 BCP69-25 SC-73
    Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D087 BCP69 PNP medium power transistor; 20 V, 1 A Product specification Supersedes data of 2002 Nov 15 2003 Nov 25 Philips Semiconductors Product specification PNP medium power transistor; 20 V, 1 A BCP69


    Original     		PDF M3D087 BCP69 SCA75 R75/05/pp14 BCP68 BCP69 BCP69-16 BCP69-25 SC-73

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D109 PBSS5320X 20 V, 3 A PNP low VCEsat BISS transistor Product data sheet Supersedes data of 2003 Nov 27 2004 Nov 04 NXP Semiconductors Product data sheet 20 V, 3 A PNP low VCEsat (BISS) transistor PBSS5320X


    Original     		PDF M3D109 PBSS5320X SC-62) R75/03/pp12

    BC868

    Abstract: BC868-25
    Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 BC868 NPN medium power transistor; 20 V, 1 A Product data sheet Supersedes data of 2003 Dec 02 2004 Nov 08 NXP Semiconductors Product data sheet NPN medium power transistor; 20 V, 1 A BC868 FEATURES


    Original     		PDF M3D109 BC868 R75/07/pp9 BC868 BC868-25

    BC869-16 SOT89 PHILIPS

    Abstract: 13861 SOT89 marking cec BC869 BC869-16 BC869-25 SOT89 transistor marking 84
    Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 BC869 PNP medium power transistor; 20 V, 1 A Product data sheet Supersedes data of 2003 Dec 02 2004 Nov 08 NXP Semiconductors Product data sheet PNP medium power transistor; 20 V, 1 A BC869 FEATURES


    Original     		PDF M3D109 BC869 BC869-1tion R75/06/pp11 BC869-16 SOT89 PHILIPS 13861 SOT89 marking cec BC869 BC869-16 BC869-25 SOT89 transistor marking 84

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D109 PBSS4320X 20 V, 3 A NPN low VCEsat BISS transistor Product data sheet Supersedes data of 2003 Dec 15 2004 Nov 03 NXP Semiconductors Product data sheet 20 V, 3 A NPN low VCEsat (BISS) transistor PBSS4320X


    Original     		PDF M3D109 PBSS4320X SC-62) R75/03/pp12

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D109 PBSS5520X 20 V, 5 A PNP low VCEsat BISS transistor Product data sheet Supersedes data of 2004 Jun 23 2004 Nov 08 NXP Semiconductors Product data sheet 20 V, 5 A PNP low VCEsat (BISS) transistor PBSS5520X


    Original     		PDF M3D109 PBSS5520X R75/02/pp13

    transistor C368

    Abstract: c368 transistor bc368 equivalent c368 high gain low capacitance NPN transistor marking code 43a BC368 BC369 SC-43A MLE327
    Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D186 BC368 NPN medium power transistor; 20 V, 1 A Product data sheet Supersedes data of 2003 Dec 01 2004 Nov 05 NXP Semiconductors Product data sheet NPN medium power transistor; 20 V, 1 A BC368 FEATURES


    Original     		PDF M3D186 BC368 R75/05/pp9 transistor C368 c368 transistor bc368 equivalent c368 high gain low capacitance NPN transistor marking code 43a BC368 BC369 SC-43A MLE327

    S45 marking

    Abstract: PBSS5320X SC6210 PBSS4320X
    Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 PBSS5320X 20 V, 3 A PNP low VCEsat BISS transistor Product data sheet Supersedes data of 2003 Nov 27 2004 Nov 04 NXP Semiconductors Product data sheet 20 V, 3 A PNP low VCEsat (BISS) transistor PBSS5320X


    Original     		PDF M3D109 PBSS5320X SC-62) R75/03/pp12 S45 marking PBSS5320X SC6210 PBSS4320X

    S44 MARKING

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 PBSS4320X 20 V, 3 A NPN low VCEsat BISS transistor Product data sheet Supersedes data of 2003 Dec 15 2004 Nov 03 NXP Semiconductors Product data sheet 20 V, 3 A NPN low VCEsat (BISS) transistor PBSS4320X


    Original     		PDF M3D109 PBSS4320X SC-62) R75/03/pp12 771-PBSS4320X135 S44 MARKING

    PBSS4520X

    Abstract: PBSS5520X sc6211
    Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 PBSS5520X 20 V, 5 A PNP low VCEsat BISS transistor Product data sheet Supersedes data of 2004 Jun 23 2004 Nov 08 NXP Semiconductors Product data sheet 20 V, 5 A PNP low VCEsat (BISS) transistor PBSS5520X


    Original     		PDF M3D109 PBSS5520X R75/02/pp13 PBSS4520X PBSS5520X sc6211

    PBSS4320X

    Abstract: PBSS5320X sc6210
    Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 PBSS4320X 20 V, 3 A NPN low VCEsat BISS transistor Product data sheet Supersedes data of 2003 Dec 15 2004 Nov 03 NXP Semiconductors Product data sheet 20 V, 3 A NPN low VCEsat (BISS) transistor PBSS4320X


    Original     		PDF M3D109 PBSS4320X SC-62) R75/03/pp12 PBSS4320X PBSS5320X sc6210

    microwave amplifier 2.4 ghz 10 watts

    Abstract: transistor 24 GHz
    Text: 2324-20 20 Watts, 24 Volts, Class C Microwave 2300-2400 MHz GENERAL DESCRIPTION The 2324-20 is a COMMON BASE transistor capable of providing 20 Watts of Class C, RF output power over the band 2300-2400 MHz. This transistor is specifically designed for Microwave Broadband Class C amplifier


    Original     		PDF 160mA microwave amplifier 2.4 ghz 10 watts transistor 24 GHz

    BLS6G3135-20

    Abstract: No abstract text available
    Text: BLS6G3135-20; BLS6G3135S-20 LDMOS S-Band radar power transistor Rev. 03 — 3 March 2009 Product data sheet 1. Product profile 1.1 General description 20 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range. Table 1. Typical performance


    Original     		PDF BLS6G3135-20; BLS6G3135S-20 BLS6G3135-20 6G3135S-20

    10 watt power transistor

    Abstract: No abstract text available
    Text: 1720 - 20 20 Watt - 28 Volts, Class C Microwave 1700 - 2000 MHz GENERAL DESCRIPTION CASE OUTLINE The 1720-20 is a COMMON BASE transistor capable of providing 20 Watts of Class C, RF output power over the band 1700-2000 MHz. This transistor is designed for Microwave Broadband Class C amplifier applications. It includes


    Original     		PDF

    BLS6G3135-20

    Abstract: No abstract text available
    Text: BLS6G3135-20; BLS6G3135S-20 LDMOS S-Band radar power transistor Rev. 01 — 7 March 2007 Objective data sheet 1. Product profile 1.1 General description 20 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range. Table 1. Typical performance


    Original     		PDF BLS6G3135-20; BLS6G3135S-20 BLS6G3135-20 6G3135S-20

    97942

    Abstract: 74929 Transistor 5503 231369 TRansistor A 940 10AM20 273157
    Text: 10AM20 20 Watts, 20 Volts, Class A Linear to 1000 MHz GENERAL DESCRIPTION The 10AM20 is a COMMON EMITTER transistor capable of providing 20 Watts of Class A, RF output power to 1000 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes


    Original     		PDF 10AM20 10AM20 Temperatures13 97942 74929 Transistor 5503 231369 TRansistor A 940 273157

    BLS3135-20

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET halfpage M3D259 BLS3135-20 Microwave power transistor Product specification 2000 Feb 01 Philips Semiconductors Product specification Microwave power transistor BLS3135-20 FEATURES PINNING - SOT422A • Suitable for short and medium pulse applications


    Original     		PDF M3D259 BLS3135-20 OT422A 603516/01/pp12 BLS3135-20

    transistor 60 watt

    Abstract: No abstract text available
    Text: 1719 - 20 20 Watt - 28 Volts, Class C Microwave 1700 - 1900 MHz GENERAL DESCRIPTION CASE OUTLINE The 1719-20 is a COMMON BASE transistor capable of providing 20 Watts of Class C, RF output power over the band 1700-1900 MHz. This transistor is designed for Microwave Broadband Class C amplifier applications. It includes


    Original     		PDF

    nxp 1791

    Abstract: radar 77 ghz NXP
    Text: BLS6G3135-20; BLS6G3135S-20 LDMOS S-Band radar power transistor Rev. 4 — 11 March 2013 Product data sheet 1. Product profile 1.1 General description 20 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range. Table 1. Typical performance


    Original     		PDF BLS6G3135-20; BLS6G3135S-20 BLS6G3135-20 6G3135S-20 nxp 1791 radar 77 ghz NXP

    1920A20

    Abstract: No abstract text available
    Text: R.B.063099 1920A20 20 Watts, 25 Volts, Class A 10 dB Gain Personal 1930 – 1990 MHz GENERAL DESCRIPTION The 1920A20 is a COMMON EMITTER transistor capable of providing 20 watts of Class A, RF output power over the band 1930-1990 MHz. This transistor is specifically designed for PERSONAL COMMUNICATIONS


    Original     		PDF 1920A20 1920A20 1990MHz

    transistor c 3206

    Abstract: transistor j7
    Text: Afa R adar Pulsed Power Transistor PH0404-7EL 7 Watts, 0.420-0.450 GHz, 20 ms Pulse, 20% Duty Features Outline Drawing • NPN Silicon Microwave Power Transistor •Common Emitter Configuration • Broadband Class C Operation • Reliable Fishbone Geometry


    OCR Scan     		PDF PH0404-7EL Sb4220S 5b42205 0DQ1175 transistor c 3206 transistor j7

    transistor yb

    Abstract: M220S transistor t 04 27
    Text: Afa Radar Pulsed Power Transistor PH0404-1OOEL 100 Watts, 0.420-0.450 GHz, 20 ms Pulse, 20% Duty Features Outline Drawing • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation • Reliable Fishbone Geometry


    OCR Scan     		PDF PH0404-1OOEL M220S PH0404-lOOEL 5b422DS transistor yb transistor t 04 27