BFT25
Abstract: MSB003 MEA909
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFT25 NPN 2 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 November 1992 Philips Semiconductors Product specification NPN 2 GHz wideband transistor DESCRIPTION BFT25 PINNING NPN transistor in a plastic SOT23
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BFT25
MSB00ny
BFT25
MSB003
MEA909
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BF689
Abstract: BF689K transistor zs 35
Text: DISCRETE SEMICONDUCTORS DATA SHEET BF689K NPN 2 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 2 GHz wideband transistor DESCRIPTION BF689K PINNING NPN transistor in a plastic SOT54
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BF689K
MSB034
BF689
BF689K
transistor zs 35
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BF763
Abstract: f763 SOT54
Text: DISCRETE SEMICONDUCTORS DATA SHEET BF763 NPN 2 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 2 GHz wideband transistor DESCRIPTION BF763 PINNING NPN transistor in a plastic SOT54
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BF763
MSB034
BF763
f763
SOT54
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BFT25
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BFT25 NPN 2 GHz wideband transistor Product specification November 1992 NXP Semiconductors Product specification NPN 2 GHz wideband transistor DESCRIPTION BFT25 PINNING NPN transistor in a plastic SOT23 envelope. It is primarily intended for use in RF
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BFT25
MSB003
R77/02/pp10
BFT25
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BFT25
Abstract: MSB003
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFT25 NPN 2 GHz wideband transistor Product specification November 1992 NXP Semiconductors Product specification NPN 2 GHz wideband transistor DESCRIPTION BFT25 PINNING NPN transistor in a plastic SOT23 envelope. It is primarily intended for use in RF
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BFT25
MSB003
R77/02/pp10
BFT25
MSB003
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2SC5600
Abstract: 2SC5737 IC 14558 IC 2801 UPA858TD-T3
Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA858TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • 2 different built-in transistors (2SC5737, 2SC5600) Q1: Built-in low noise transistor NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz
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PA858TD
2SC5737,
2SC5600)
S21e2
2SC5737
2SC5600
PA858TD-T3
2SC5600
2SC5737
IC 14558
IC 2801
UPA858TD-T3
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ic 901
Abstract: 2SC5603 2SC5676 uPA846TC-T1
Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA846TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • 2 different built-in transistors (2SC5603, 2SC5676) Q1: 13.5 GHz fT high-gain transistor
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PA846TC
2SC5603,
2SC5676)
S21e2
2SC5603
2SC5676
ic 901
2SC5603
2SC5676
uPA846TC-T1
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a406 rf npn
Abstract: No abstract text available
Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA855TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5737, 2SC5745) Q1: Low noise transistor NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz
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PA855TD
2SC5737,
2SC5745)
2SC5737
2SC5745
PA855TD1
PU10098EJ01V0DS
a406 rf npn
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2SC5737
Abstract: 2SC5745
Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA855TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5737, 2SC5745) Q1: Low noise transistor NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz
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PA855TD
2SC5737,
2SC5745)
S21e2
2SC5737
2SC5745
PA855TD-T3
2SC5737
2SC5745
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2SC5436
Abstract: 2SC5600 NEC 821
Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA842TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • 2 different built-in transistors (2SC5436, 2SC5600) Q1: Low noise transistor NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz
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PA842TC
2SC5436,
2SC5600)
S21e2
2SC5436
2SC5600
2SC5436
2SC5600
NEC 821
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2SC5676
Abstract: 2SC5737 MARKING VT
Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA859TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5737, 2SC5676) Q1: Low noise transistor NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz
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PA859TD
2SC5737,
2SC5676)
S21e2
2SC5737
2SC5676
PA859TD-T3
2SC5676
2SC5737
MARKING VT
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2SC5736
Abstract: 2SC5737 marking VH
Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA851TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5737, 2SC5736) Q1: Low noise transistor NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz
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PA851TD
2SC5737,
2SC5736)
S21e2
2SC5737
2SC5736
PA851TD-T3
2SC5736
2SC5737
marking VH
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VO6C
Abstract: NEL2004 NEL2035 NEL2001 NEL2004F02-24 NEL2012 VO-6C
Text: DATA SHEET SILICON POWER TRANSISTOR NEL2004F02-24 NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier is designed for 1.8-2 GHz PHS/PCN/PCS base station applications. It incorporates emitter ballast resistors, gold metallizations and 2 2 ±0.2 3 ±0.2 2 ±0.2
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NEL2004F02-24
NEL2004F02-24
VO6C
NEL2004
NEL2035
NEL2001
NEL2012
VO-6C
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MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
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F 0552
Abstract: PA862T
Text: NPN SILICON RF TWIN TRANSISTOR PA862TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5800) Q1: Built-in high gain transistor fT = 12.0 GHz TYP., S21e2 = 8.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz
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PA862TD
2SC5435,
2SC5800)
S21e2
2SC5435
2SC5800
P15685EJ1V0DS
F 0552
PA862T
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2SC5436
Abstract: 2SC5786
Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA861TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5436, 2SC5786) Q1: High-gain transistor fT = 12.0 GHz TYP., S21e2 = 9.0 dB TYP. @ VCE = 1 V, IC = 10 mA, f = 2 GHz
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PA861TD
2SC5436,
2SC5786)
S21e2
2SC5436
2SC5786
2SC5436
2SC5786
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14-802-12
Abstract: 2SC5786 2SC5436
Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA861TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5436, 2SC5786) Q1: High-gain transistor fT = 12.0 GHz TYP., S21e2 = 9.0 dB TYP. @ VCE = 1 V, IC = 10 mA, f = 2 GHz
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PA861TD
2SC5436,
2SC5786)
S21e2
2SC5436
2SC5786
14-802-12
2SC5786
2SC5436
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transistor NEC 7812
Abstract: 2SC5668 2SC5676 FB 3306 NEC 7812 2SC567 nec japan 7812
Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA848TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • 2 different built-in transistors (2SC5668, 2SC5676) Q1: 21.0 GHz fT high-gain transistor, ideal for 3.6 to 4.2 GHz oscillation application
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PA848TD
2SC5668,
2SC5676)
S21e2
2SC5668
2SC5676
transistor NEC 7812
2SC5668
2SC5676
FB 3306
NEC 7812
2SC567
nec japan 7812
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Untitled
Abstract: No abstract text available
Text: NPN SILICON RF TWIN TRANSISTOR PA861TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5436, 2SC5786) Q1: High-gain transistor fT = 12.0 GHz TYP., S21e2 = 9.0 dB TYP. @ VCE = 1 V, IC = 10 mA, f = 2 GHz
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PA861TD
2SC5436,
2SC5786)
S21e2
2SC5436
2SC5786
PU10057EJ02V0DS
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k 2059 TRANSISTOR
Abstract: UPA850TD 2SC5435 2SC5736 marking VF
Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA850TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5736) Q1: High gain transistor fT = 12.0 GHz TYP., S21e2 = 8.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz
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PA850TD
2SC5435,
2SC5736)
S21e2
2SC5435
2SC5736
k 2059 TRANSISTOR
UPA850TD
2SC5435
2SC5736
marking VF
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0443 IC
Abstract: 2SC5435 2SC5745
Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA854TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5745) Q1: High gain transistor fT = 12.0 GHz TYP., S21e2 = 8.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz
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PA854TD
2SC5435,
2SC5745)
S21e2
2SC5435
2SC5745
0443 IC
2SC5435
2SC5745
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2SC5179
Abstract: UPA807T
Text: DATA SHEET SILICON TRANSISTOR µPA807T MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD PACKAGE DRAWINGS (Unit: mm) FEATURES • Low Current, High Gain |S21e|2 = 9 dB TYP. @VCE = 2 V, IC = 7 mA, f = 2 GHz
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PA807T
PA807T-T1
2SC5179
UPA807T
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A773* Transistor
Abstract: A773 Transistor
Text: DATA SHEET SILICON TRANSISTOR µPA807T MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD PACKAGE DRAWINGS (Unit: mm) FEATURES • Low Current, High Gain |S21e|2 = 9 dB TYP. @VCE = 2 V, IC = 7 mA, f = 2 GHz
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PA807T
PA807T-T1
A773* Transistor
A773 Transistor
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421-5
Abstract: 1 307 329 082 217-2 2SC5436 43ga
Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA808TC NPN SILICON RF TRANSISTOR WITH 2 ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Built-in high-gain transistor fT = 9.0 GHz TYP., S21e2 = 7.5 dB TYP. @ VCE = 1 V, IC = 10 mA, f = 2 GHz
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PA808TC
S21e2
2SC5436)
2SC5436
PA808TC-T1
421-5
1 307 329 082
217-2
2SC5436
43ga
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