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    TRANSISTOR 2 GHZ Search Results

    TRANSISTOR 2 GHZ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2 GHZ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BFT25

    Abstract: MSB003 MEA909
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFT25 NPN 2 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 November 1992 Philips Semiconductors Product specification NPN 2 GHz wideband transistor DESCRIPTION BFT25 PINNING NPN transistor in a plastic SOT23


    Original     		PDF BFT25 MSB00ny BFT25 MSB003 MEA909

    BF689

    Abstract: BF689K transistor zs 35
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF689K NPN 2 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 2 GHz wideband transistor DESCRIPTION BF689K PINNING NPN transistor in a plastic SOT54


    Original     		PDF BF689K MSB034 BF689 BF689K transistor zs 35

    BF763

    Abstract: f763 SOT54
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF763 NPN 2 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 2 GHz wideband transistor DESCRIPTION BF763 PINNING NPN transistor in a plastic SOT54


    Original     		PDF BF763 MSB034 BF763 f763 SOT54

    BFT25

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT BFT25 NPN 2 GHz wideband transistor Product specification November 1992 NXP Semiconductors Product specification NPN 2 GHz wideband transistor DESCRIPTION BFT25 PINNING NPN transistor in a plastic SOT23 envelope. It is primarily intended for use in RF


    Original     		PDF BFT25 MSB003 R77/02/pp10 BFT25

    BFT25

    Abstract: MSB003
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFT25 NPN 2 GHz wideband transistor Product specification November 1992 NXP Semiconductors Product specification NPN 2 GHz wideband transistor DESCRIPTION BFT25 PINNING NPN transistor in a plastic SOT23 envelope. It is primarily intended for use in RF


    Original     		PDF BFT25 MSB003 R77/02/pp10 BFT25 MSB003

    2SC5600

    Abstract: 2SC5737 IC 14558 IC 2801 UPA858TD-T3
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA858TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • 2 different built-in transistors (2SC5737, 2SC5600) Q1: Built-in low noise transistor NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz


    Original     		PDF PA858TD 2SC5737, 2SC5600) S21e2 2SC5737 2SC5600 PA858TD-T3 2SC5600 2SC5737 IC 14558 IC 2801 UPA858TD-T3

    ic 901

    Abstract: 2SC5603 2SC5676 uPA846TC-T1
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA846TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • 2 different built-in transistors (2SC5603, 2SC5676) Q1: 13.5 GHz fT high-gain transistor


    Original     		PDF PA846TC 2SC5603, 2SC5676) S21e2 2SC5603 2SC5676 ic 901 2SC5603 2SC5676 uPA846TC-T1

    a406 rf npn

    Abstract: No abstract text available
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA855TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5737, 2SC5745) Q1: Low noise transistor NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz


    Original     		PDF PA855TD 2SC5737, 2SC5745) 2SC5737 2SC5745 PA855TD1 PU10098EJ01V0DS a406 rf npn

    2SC5737

    Abstract: 2SC5745
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA855TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5737, 2SC5745) Q1: Low noise transistor NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz


    Original     		PDF PA855TD 2SC5737, 2SC5745) S21e2 2SC5737 2SC5745 PA855TD-T3 2SC5737 2SC5745

    2SC5436

    Abstract: 2SC5600 NEC 821
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA842TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • 2 different built-in transistors (2SC5436, 2SC5600) Q1: Low noise transistor NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz


    Original     		PDF PA842TC 2SC5436, 2SC5600) S21e2 2SC5436 2SC5600 2SC5436 2SC5600 NEC 821

    2SC5676

    Abstract: 2SC5737 MARKING VT
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA859TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5737, 2SC5676) Q1: Low noise transistor NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz


    Original     		PDF PA859TD 2SC5737, 2SC5676) S21e2 2SC5737 2SC5676 PA859TD-T3 2SC5676 2SC5737 MARKING VT

    2SC5736

    Abstract: 2SC5737 marking VH
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA851TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5737, 2SC5736) Q1: Low noise transistor NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz


    Original     		PDF PA851TD 2SC5737, 2SC5736) S21e2 2SC5737 2SC5736 PA851TD-T3 2SC5736 2SC5737 marking VH

    VO6C

    Abstract: NEL2004 NEL2035 NEL2001 NEL2004F02-24 NEL2012 VO-6C
    Text: DATA SHEET SILICON POWER TRANSISTOR NEL2004F02-24 NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier is designed for 1.8-2 GHz PHS/PCN/PCS base station applications. It incorporates emitter ballast resistors, gold metallizations and 2 2 ±0.2 3 ±0.2 2 ±0.2


    Original     		PDF NEL2004F02-24 NEL2004F02-24 VO6C NEL2004 NEL2035 NEL2001 NEL2012 VO-6C

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


    Original     		PDF

    F 0552

    Abstract: PA862T
    Text: NPN SILICON RF TWIN TRANSISTOR PA862TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5800) Q1: Built-in high gain transistor fT = 12.0 GHz TYP., S21e2 = 8.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz


    Original     		PDF PA862TD 2SC5435, 2SC5800) S21e2 2SC5435 2SC5800 P15685EJ1V0DS F 0552 PA862T

    2SC5436

    Abstract: 2SC5786
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA861TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5436, 2SC5786) Q1: High-gain transistor fT = 12.0 GHz TYP., S21e2 = 9.0 dB TYP. @ VCE = 1 V, IC = 10 mA, f = 2 GHz


    Original     		PDF PA861TD 2SC5436, 2SC5786) S21e2 2SC5436 2SC5786 2SC5436 2SC5786

    14-802-12

    Abstract: 2SC5786 2SC5436
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA861TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5436, 2SC5786) Q1: High-gain transistor fT = 12.0 GHz TYP., S21e2 = 9.0 dB TYP. @ VCE = 1 V, IC = 10 mA, f = 2 GHz


    Original     		PDF PA861TD 2SC5436, 2SC5786) S21e2 2SC5436 2SC5786 14-802-12 2SC5786 2SC5436

    transistor NEC 7812

    Abstract: 2SC5668 2SC5676 FB 3306 NEC 7812 2SC567 nec japan 7812
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA848TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • 2 different built-in transistors (2SC5668, 2SC5676) Q1: 21.0 GHz fT high-gain transistor, ideal for 3.6 to 4.2 GHz oscillation application


    Original     		PDF PA848TD 2SC5668, 2SC5676) S21e2 2SC5668 2SC5676 transistor NEC 7812 2SC5668 2SC5676 FB 3306 NEC 7812 2SC567 nec japan 7812

    Untitled

    Abstract: No abstract text available
    Text: NPN SILICON RF TWIN TRANSISTOR PA861TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5436, 2SC5786) Q1: High-gain transistor fT = 12.0 GHz TYP., S21e2 = 9.0 dB TYP. @ VCE = 1 V, IC = 10 mA, f = 2 GHz


    Original     		PDF PA861TD 2SC5436, 2SC5786) S21e2 2SC5436 2SC5786 PU10057EJ02V0DS

    k 2059 TRANSISTOR

    Abstract: UPA850TD 2SC5435 2SC5736 marking VF
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA850TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5736) Q1: High gain transistor fT = 12.0 GHz TYP., S21e2 = 8.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz


    Original     		PDF PA850TD 2SC5435, 2SC5736) S21e2 2SC5435 2SC5736 k 2059 TRANSISTOR UPA850TD 2SC5435 2SC5736 marking VF

    0443 IC

    Abstract: 2SC5435 2SC5745
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA854TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5745) Q1: High gain transistor fT = 12.0 GHz TYP., S21e2 = 8.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz


    Original     		PDF PA854TD 2SC5435, 2SC5745) S21e2 2SC5435 2SC5745 0443 IC 2SC5435 2SC5745

    2SC5179

    Abstract: UPA807T
    Text: DATA SHEET SILICON TRANSISTOR µPA807T MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD PACKAGE DRAWINGS (Unit: mm) FEATURES • Low Current, High Gain |S21e|2 = 9 dB TYP. @VCE = 2 V, IC = 7 mA, f = 2 GHz


    Original     		PDF PA807T PA807T-T1 2SC5179 UPA807T

    A773* Transistor

    Abstract: A773 Transistor
    Text: DATA SHEET SILICON TRANSISTOR µPA807T MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD PACKAGE DRAWINGS (Unit: mm) FEATURES • Low Current, High Gain |S21e|2 = 9 dB TYP. @VCE = 2 V, IC = 7 mA, f = 2 GHz


    Original     		PDF PA807T PA807T-T1 A773* Transistor A773 Transistor

    421-5

    Abstract: 1 307 329 082 217-2 2SC5436 43ga
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA808TC NPN SILICON RF TRANSISTOR WITH 2 ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Built-in high-gain transistor fT = 9.0 GHz TYP., S21e2 = 7.5 dB TYP. @ VCE = 1 V, IC = 10 mA, f = 2 GHz


    Original     		PDF PA808TC S21e2 2SC5436) 2SC5436 PA808TC-T1 421-5 1 307 329 082 217-2 2SC5436 43ga