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    TRANSISTOR 1GE Search Results

    TRANSISTOR 1GE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 1GE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TX033

    Abstract: westcode igbt
    Text: WESTCODE Date:- 3 Jan, 2003 Data Sheet Issue:- 2 An IXYS Company Provisional data Insulated Gate Bi-Polar Transistor Type T1500TA25B Development Type Number: TX033TA25B Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage


    Original     		PDF T1500TA25B TX033TA25B) T1500TA25B TX033 westcode igbt

    transistor 600v 500a

    Abstract: T0500NA25 D-68623 T0500 ic 90807
    Text: WESTCODE Date:- 10 Mar, 2003 Data Sheet Issue:- 2 An IXYS Company Provisional data Insulated Gate Bi-Polar Transistor Type T0500NA25E Development Type Number: TX044NA25E Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage


    Original     		PDF T0500NA25E TX044NA25E) T0500NA25E transistor 600v 500a T0500NA25 D-68623 T0500 ic 90807

    T0340VB

    Abstract: T0340VB45G westcode igbt
    Text: Date:- 6 August, 2012 Data Sheet Issue:- 2 Insulated Gate Bi-Polar Transistor Type T0340VB45G Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate. 2800


    Original     		PDF T0340VB45G VRM10V, T0340VB45G T0340VB westcode igbt

    T1500TB25E

    Abstract: No abstract text available
    Text: Date:- 18 Feb, 2014 Data Sheet Issue:- 1 Insulated Gate Bi-Polar Transistor Type T1500TB25E Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 2500 V VDC link Permanent DC voltage for 100 FIT failure rate. 1250


    Original     		PDF T1500TB25E T1500TB25E

    T0160NB45A

    Abstract: No abstract text available
    Text: Date:- 15 Feb, 2013 Data Sheet Issue:- 1 Insulated Gate Bi-Polar Transistor Type T0160NB45A Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate. 2800


    Original     		PDF T0160NB45A T0160NB45A

    T0510VB45E

    Abstract: No abstract text available
    Text: Date:- 1 October, 2012 Data Sheet Issue:- P1 Insulated Gate Bi-Polar Transistor Type T0510VB45E Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate.


    Original     		PDF T0510VB45E T0510VB45E

    T2400GB

    Abstract: No abstract text available
    Text: Date: - 21 Nov, 2011 Data Sheet Issue: - 1 Insulated Gate Bi-Polar Transistor Type T2400GB45E Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate 2800


    Original     		PDF T2400GB45E T2400GB45E T2400GB

    IGBT DRIVER Analog Devices

    Abstract: 300V dc to dc boost converter flash trigger transformer fly-back transformer igbt transformer driver Xenon Flash 6v 6206 voltage regulator 12 pin flyback transformer bi-directional switches IGBT fly back transformer
    Text: IXYS MX881 Xenon Flash Controller & LED Torch Driver Features: General Description • Highly Integrated Solution that includes: Optimized Flyback Boost Converter Controller, IGBT Driver, 100mA LED Torch Driver, and Transformer Drive Transistor • Small Size 3mm x 5mm DFN-16


    Original     		PDF MX881 100mA DFN-16) 220mA) MX881 IGBT DRIVER Analog Devices 300V dc to dc boost converter flash trigger transformer fly-back transformer igbt transformer driver Xenon Flash 6v 6206 voltage regulator 12 pin flyback transformer bi-directional switches IGBT fly back transformer

    T0258HF65G

    Abstract: No abstract text available
    Text: Date:- 27 Jan, 2014 Data Sheet Issue:- A1 Advance Data Insulated Gate Bi-Polar Transistor Type T0258HF65G Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 6500 V VCES Collector – emitter voltage Tj 25°C


    Original     		PDF T0258HF65G T0258HF65G

    igbt flash

    Abstract: "flyback transformer" igbt xenon tube 8 pin 24v transformer xenon flash circuit CMX881
    Text: IXYS MX881 Xenon Flash Controller & LED Torch Driver Features: General Description • Highly Integrated Solution that includes: Optimized Flyback Boost Converter Controller, IGBT Driver, 100mA LED Torch Driver, and Transformer Drive Transistor • Small Size 3mm x 5mm DFN-16


    Original     		PDF MX881 MX881 100mA igbt flash "flyback transformer" igbt xenon tube 8 pin 24v transformer xenon flash circuit CMX881

    Untitled

    Abstract: No abstract text available
    Text: Date:- 6 August, 2012 Data Sheet Issue:- 2 Insulated Gate Bi-Polar Transistor Type T0340VB45G Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate. 2800


    Original     		PDF T0340VB45G T0340VB45G

    Untitled

    Abstract: No abstract text available
    Text: Date:- 6 May, 2014 Data Sheet Issue:- P1 Prospective Data Insulated Gate Bi-Polar Transistor Type T0900DF65A Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 6500 V VCES Collector – emitter voltage Tj 25°C


    Original     		PDF T0900DF65A T0900DF65A

    Untitled

    Abstract: No abstract text available
    Text: Date: - 21 Nov, 2011 Data Sheet Issue: - 1 Insulated Gate Bi-Polar Transistor Type T2400GB45E Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate 2800


    Original     		PDF T2400GB45E T2400GB45E

    T1200EB45E

    Abstract: No abstract text available
    Text: Date:- 19 Oct, 2009 Data Sheet Issue:- 1 Provisional Data Insulated Gate Bi-Polar Transistor Type T1200EB45E Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate


    Original     		PDF T1200EB45E T1200EB45E

    CW 7805 regulator

    Abstract: cw 7805 TRANSISTOR CW 7805 resistor 1.2k 1/CW 7805
    Text: PTF210901 LDMOS RF Power Field Effect Transistor 90 W, 2110–2170 MHz Description Features The PTF210901 is an internally matched 90 W GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.


    Original     		PDF PTF210901 PTF210901 CW 7805 regulator cw 7805 TRANSISTOR CW 7805 resistor 1.2k 1/CW 7805

    IC500A

    Abstract: t0800ta45e D-68623 T0800 transistor D 982
    Text: Date:- 14 Dec, 2005 Data Sheet Issue:- 1 Provisional Data Insulated Gate Bi-Polar Transistor Type T0800TA45E Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate


    Original     		PDF T0800TA45E T0800TA45E IC500A D-68623 T0800 transistor D 982

    CW 7805

    Abstract: CW 7805 regulator regulator CW 7805 P10ECT-ND CW 7805 1k 7805 datasheet ptf21090 TRANSISTOR CW 7805 resistor* 24k ohm PCC1772CT-ND
    Text: PTF210901 LDMOS RF Power Field Effect Transistor 90 W, 2110–2170 MHz Description Features The PTF210901 is an internally matched 90 W GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.


    Original     		PDF PTF210901 PTF210901 CW 7805 CW 7805 regulator regulator CW 7805 P10ECT-ND CW 7805 1k 7805 datasheet ptf21090 TRANSISTOR CW 7805 resistor* 24k ohm PCC1772CT-ND

    CW 7805 regulator

    Abstract: TRANSISTOR CW 7805 regulator CW 7805 cw 7805
    Text: PTF210901 LDMOS RF Power Field Effect Transistor 90 W, 2110–2170 MHz Description Features The PTF210901 is an internally matched 90 W GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.


    Original     		PDF PTF210901 PTF210901 CW 7805 regulator TRANSISTOR CW 7805 regulator CW 7805 cw 7805

    T2400GA45E

    Abstract: T2400 D-68623
    Text: Date:- 5 March, 2007 Data Sheet Issue:- 2 Provisional Data Insulated Gate Bi-Polar Transistor Type T2400GA45E Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate


    Original     		PDF T2400GA45E T2400GA45E T2400 D-68623

    T1200EB

    Abstract: T1200EB45E LA 4750 n transistor polar D-68623 T1200 133nF Gate Drive Characteristics IGBT1200A
    Text: Date:- 19 Oct, 2009 Data Sheet Issue:- 1 Provisional Data Insulated Gate Bi-Polar Transistor Type T1200EB45E Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate


    Original     		PDF T1200EB45E T1200EB45E T1200EB LA 4750 n transistor polar D-68623 T1200 133nF Gate Drive Characteristics IGBT1200A

    MJ 5030

    Abstract: T0900TA52E
    Text: Date:- 17 Jun, 2003 Provisional Data  Data Sheet Issue:- 2 Absolute Maximum Ratings VOLTAGE RATINGS   Insulated Gate Bi-Polar Transistor Type T0900TA52E MAXIMUM LIMITS UNITS Collector – emitter voltage 5200 V VDC link Permanent DC voltage for 100 FIT failure rate.


    Original     		PDF T0900TA52E T0900TA52E MJ 5030

    Untitled

    Abstract: No abstract text available
    Text: WESTCODE An Date:- 3 March, 2012 Data Sheet Issue: - 1 IXYS Company Insulated Gate Bi-Polar Transistor Type T0800EB45G Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate.


    Original     		PDF T0800EB45G T0800EB45G

    2SK926

    Abstract: No abstract text available
    Text: DATA SHEET Preliminary NEC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE DESCRIPTIO N 2SK926 The 2SK976 is N-channel MOS Field E ffe c t Power PACKAG E D IM ENSIONS irl mil irrveiarj InchesJ Transistor designed for sw itching power supplies, DC-DC


    OCR Scan     		PDF 2SK926 2SK976 2SK926

    Untitled

    Abstract: No abstract text available
    Text: International I R Rectifier pd-9.m65a IRG4 PC4 0 S PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT Features • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter


    OCR Scan     		PDF O-247AC