Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR 1BS Search Results

    TRANSISTOR 1BS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 1BS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1BS transistor

    Abstract: No abstract text available
    Text: BC817UPN NPN Silicon AF Transistor Array • For AF stages and driver applications • High current gain 4 3 5 • Low collector-emitter saturation voltage 2 6 1 • Two galvanic internal isolated NPN/PNP transistors in one package Tape loading orientation


    Original     		PDF BC817UPN EHA07177 1BS transistor

    transistor 1Bs

    Abstract: ic 817 1BS transistor marking 1Bs BC817UPN SC74
    Text: BC817UPN NPN/PNP Silicon Transistor Array  For AF input stages and driver applications 5 4 6  High current gain  Low collector-emitter saturation voltage  Two galvanic internal isolated NPN/PNP 3 2 Transistors in one package 1 Tape loading orientation


    Original     		PDF BC817UPN VPW09197 EHA07177 Collector-emitt10 EHP00223 EHP00222 EHP00224 EHP00218 Aug-21-2002 transistor 1Bs ic 817 1BS transistor marking 1Bs BC817UPN SC74

    1BS transistor

    Abstract: No abstract text available
    Text: BC817UPN NPN/PNP Silicon Transistor Array  For AF input stages and driver applications 5 4 6  High current gain  Low collector-emitter saturation voltage  Two galvanic internal isolated NPN/PNP 3 2 Transistors in one package 1 Tape loading orientation


    Original     		PDF BC817UPN VPW09197 EHA07177 1BS transistor

    Untitled

    Abstract: No abstract text available
    Text: BC817UPN NPN/PNP Silicon Transistor Array  For AF input stages and driver applications 5 4 6  High current gain  Low collector-emitter saturation voltage  Two galvanic internal isolated NPN/PNP 3 2 Transistors in one package 1 Tape loading orientation


    Original     		PDF BC817UPN VPW09197 EHA07177

    marking CODE 1BS

    Abstract: 1BS transistor BC817UPN BCW66H SC74 marking code w1s transistor 1Bs TRANSISTOR marking CB code
    Text: BC817UPN NPN Silicon AF Transistor Array • For AF stages and driver applications 4 • High current gain 3 5 2 6 • Low collector-emitter saturation voltage 1 • Two galvanic internal isolated NPN/PNP transistors in one package • Pb-free (RoHS compliant) package 1)


    Original     		PDF BC817UPN EHA07177 marking CODE 1BS 1BS transistor BC817UPN BCW66H SC74 marking code w1s transistor 1Bs TRANSISTOR marking CB code

    ic 817

    Abstract: BC817UPN transistor 1Bs SC74 817 transistor 817 c w
    Text: BC817UPN NPN/PNP Silicon Transistor Array • For AF input stages and driver applications 5 4 6 • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP 3 2 Transistors in one package 1 C1 B2 E2 6 5 4


    Original     		PDF BC817UPN VPW09197 EHA07177 EHP00223 EHP00222 EHP00224 EHP00218 Jul-02-2001 ic 817 BC817UPN transistor 1Bs SC74 817 transistor 817 c w

    transistor 1Bs

    Abstract: 1BS MARKING CODE B 817 c marking CODE 1BS infineon marking W1s marking code w1s
    Text: BC817UPN NPN Silicon AF Transistor Array • For AF stages and driver applications 4 • High current gain 3 5 2 6 • Low collector-emitter saturation voltage 1 • Two galvanic internal isolated NPN/PNP transistors in one package • Pb-free (RoHS compliant) package


    Original     		PDF BC817UPN EHA07177 transistor 1Bs 1BS MARKING CODE B 817 c marking CODE 1BS infineon marking W1s marking code w1s

    transistor 1Bs

    Abstract: No abstract text available
    Text: BC817UPN NPN/PNP Silicon Transistor Array  For AF input stages and driver applications 5 4 6  High current gain  Low collector-emitter saturation voltage  Two galvanic internal isolated NPN/PNP 3 2 Transistors in one package 1 C1 B2 E2 6 5 4 VPW09197


    Original     		PDF BC817UPN VPW09197 EHA07177 EHP00223 EHP00222 EHP00224 EHP00218 Nov-29-2001 transistor 1Bs

    transistor 1Bs

    Abstract: ic 817 BC817UPN
    Text: BC 817U PN NPN/PNP Silicon Transistor Array • For AF input stages and driver applications 5 4 6 • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP 3 2 Transistors in one package 1 C1 B2 E2 6 5


    Original     		PDF VPW09197 EHA07177 SC-74 EHP00223 EHP00222 EHP00224 EHP00218 Apr-22-1999 transistor 1Bs ic 817 BC817UPN

    SK 18752

    Abstract: SK 18751 2SC5586 SI-18752 fn651 709332a CTB-34D SLA6102 SLA4052 SI 18751
    Text: Bulletin No O03ED0 （May, 2008） SEMICONDUCTORS GENERAL CATALOG ICS TRANSISTORS THYRISTORS DIODES LEDS LE D Diode I C Thyristor Tr a n s i s t o r SANKEN ELECTRIC CO., LTD. http://www.sanken-ele.co.jp/en/index.html Warning ● The contents in this document are subject to changes, for improvement and other purposes,


    Original     		PDF O03ED0 dete7837 H1-O03ED0-0805020NM SK 18752 SK 18751 2SC5586 SI-18752 fn651 709332a CTB-34D SLA6102 SLA4052 SI 18751

    transistor BU 102S

    Abstract: fgt313 stp 10n40 SLA4052 BU 102S c4381 high voltage 3-phase motor driver ic RELAY sz - 2103 12V C5100 MOSFET SLA5096
    Text: SEMICONDUCTORS GENERAL CATALOG 2010 Sanken Electric Co., Ltd. Overseas Sales Headquarters Metropolitan Plaza Building, 1-11-1 Nishi-Ikebukuro Toshima-ku, Tokyo 171-0021, Japan Te l : 81-3-3986-6164 Fax: 81-3-3986-8637 WORLDWIDE SALES OFFICES Asia-Pacific China


    Original     		PDF H1-O03EE0-1004015ND transistor BU 102S fgt313 stp 10n40 SLA4052 BU 102S c4381 high voltage 3-phase motor driver ic RELAY sz - 2103 12V C5100 MOSFET SLA5096

    SSC9512

    Abstract: STR-W6750 B1560 equivalent STRW6252 str3a100 sanken audio modules 24v dc soft start motor control diagram DARLINGTON TRANSISTOR ARRAY strw6053 inverter 12v to 220 ac mosfet based
    Text: Bulletin No O03EH0 （Mar, 2013） Sanken Electric Co., Ltd. Overseas Sales Headquarters Metropolitan Plaza Building, 1-11-1 Nishi-Ikebukuro Toshima-ku, Tokyo 171-0021, Japan Te l : 81-3-3986-6164 Fax: 81-3-3986-8637 WORLDWIDE SALES OFFICES Asia-Pacific China


    Original     		PDF O03EH0 STR-X6768N TMA256B-L STR-X6769 TMB166S-L STR-X6769B TMB206S-L STR-Y6453 VR-60SS STR-Y6456 SSC9512 STR-W6750 B1560 equivalent STRW6252 str3a100 sanken audio modules 24v dc soft start motor control diagram DARLINGTON TRANSISTOR ARRAY strw6053 inverter 12v to 220 ac mosfet based

    SKIIP 33 nec 125 t2

    Abstract: skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302
    Text: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.


    Original     		PDF 734TL UWEB-MODEM-34 HCS412/WM TLV320AIC10IPFB 100MB NEON250 GA-60XM7E BLK32X40 BLK32X42 SKIIP 33 nec 125 t2 skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


    OCR Scan     		PDF AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492

    MPSU60

    Abstract: MPS-U60 MPSU10 MPS-U10 MPSU60 transistor HB 541
    Text: MPS-U60 SILICON PNP SILICON ANNULAR TRANSISTOR PNP SILICON HIGH VOLTAGE TRANSISTOR . . . designed for general-purpose applications requiring high breakdown voltages, low saturation voltages and low capacitance. • Com plem ent to N P N T y p e M PS-U 10


    OCR Scan     		PDF MPS-U60 MPS-U10 Tc-25Â MPSU60 MPS-U60 MPSU10 MPS-U10 MPSU60 transistor HB 541

    MPSU07

    Abstract: MPS-U07 MPS-U57 MPSU57 MPSU07 transistor transistor a 953
    Text: MPS-U07 SILICON NPN SILICON AM PLIFIER TRANSISTOR NPN SILICON ANNULAR AM PLIFIER TRANSISTOR . . . designed fo r general-purpose, high-voltage am plifier and driver applications. • High C ollector-E m itter Breakdown Voltage — B V c E O = 100 Vdc (M in) @ I q = 1.0 mAdc


    OCR Scan     		PDF MPS-U07 MPS-U57 MPSU07 MPS-U07 MPS-U57 MPSU57 MPSU07 transistor transistor a 953

    scr 2n4444

    Abstract: light operated scr alarm MRD3056 photo transistor mrd3056 2n4444 transistor NPN 2n4444 MRD3050 color sensitive PHOTO TRANSISTOR 2n5060 transistor MRD3055
    Text: MRD3050 silicon thru MRD3056 NPN SILICON PHOTO TRANSISTOR . . . designed fo r application in industrial inspection, processing and control, counters, sorters, switching and logic circuits or any design requiring radiation sensitivity, and stable characteristics.


    OCR Scan     		PDF MRD3050 MRD3056 MRD3050 AN-508, 2N5060 MPS6516 2N4444* 2N4444 scr 2n4444 light operated scr alarm MRD3056 photo transistor mrd3056 2n4444 transistor NPN color sensitive PHOTO TRANSISTOR 2n5060 transistor MRD3055

    bfq68 scattering

    Abstract: BFQ68 d 1556 transistor ha 1452 Amplifiers IEC134 1685 transistor
    Text: b b 5 3 ^ 3 1 P h ilip s S e m ic o n d u c to rs 0 Q 3 ]ib 5 3 437 M l AP X P ro d u c t s p e c ific a tio n NPN 4 GHz wideband transistor •— BFQ68 N A ME R P H IL IP S /D IS C R E T E b *1 E I> PINNING DESCRIPTION NPN transistor mounted in a four-lead dual-emitter SOT122A


    OCR Scan     		PDF bb53T31 0031bS3 BFQ68 OT122A bfq68 scattering BFQ68 d 1556 transistor ha 1452 Amplifiers IEC134 1685 transistor

    MT1115

    Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
    Text: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir


    OCR Scan     		PDF 108th MT1115 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117

    transistor Bs 998

    Abstract: No abstract text available
    Text: SIEM ENS Silicon N Channel MOSFET Tetrode BF 998 F e a tu re s • Short-channel transistor with high S/C quality factor • For low-noise, gain-controlled input stages up to 1 GHz 5:1 Type B F 998 M arking MO O rd ering C o d e tape and reel 1 Q 6 2 7 0 2 -F 1 129


    OCR Scan     		PDF BB515 p270k2 transistor Bs 998

    DIODE 6BA

    Abstract: MAX1659 i658 6ba diode
    Text: 19-1263; Rev 0: 7/97 JViJiXAJVK 350m A, 1 6 .5 V Input, Low-Dropout Linear Regulators _ G eneral D escription The MAX1658/MAXI 659 feature a 1jjA shutdown mode, reverse battery protection, short-circuit protection, and thermal shutdown. They are available in a special highpower 1.2W , 8-pin SO package designed specifically


    OCR Scan     		PDF 699LXVUW8S9LXVW 490mV 350mA MAX1659) MAX1658) 658/MAX1659 350mA, DIODE 6BA MAX1659 i658 6ba diode

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Dig./Ana. INTERFACE M62260FP CS / BS CONVERTER DRIVER IC DESCRIPTION PIN CONFIGURATION (TOP VIEW) M62260FP is developed to be a 2-channel HEMT driver. Capable of simplifying the peripheral circuits, this 1C permits com­ pact unitized design.


    OCR Scan     		PDF M62260FP M62260FP 14P2P-A

    Motorola transistors MRF 947

    Abstract: motorola hep cross reference 2N5070 2N5591 MOTOROLA Semicon volume 1 mrf532 transistor equivalents for 2n3866 siemens semiconductor manual Microlab Splitter Specification sheet pt9797
    Text: MOTOROLA RF DATA MANUAL Prepared by Technical Information Center M otorola’s leadership position of RF power, small-signal transistors and hybrid amplifiers is by research and new product development coupled with a com plete in-house m anufacturing ca pa b ility in clu d in g silico n g row ing,


    OCR Scan     		PDF

    OMRON K3NH-TA1A

    Abstract: omron k3nh EM 235 connected to pt100 K3NH-TA1A DMK DIGITAL METER lux meter calibration
    Text: Temperature Meter omRon K3NH Temperature Meter Operation Manual Produced January 1998 iv Notice: OMRON products are manufactured for use according to proper procedures by a qualified operator and only for the purposes described in this manual. The following conventions are used to indicate and classify precautions in this manual. Always heed


    OCR Scan     		PDF 6-949-6012/Fax: NL-2132 2356-81-300/Fax: 847-843-7900/Fax: 835-3011/Fax: N92-E1-1 OMRON K3NH-TA1A omron k3nh EM 235 connected to pt100 K3NH-TA1A DMK DIGITAL METER lux meter calibration