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    TRANSISTOR 1BP Search Results

    TRANSISTOR 1BP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 1BP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor smd y4w

    Abstract: z7w smd transistor Y4W SMD y4p smd transistor Y4W diode transistor smd 1Bp z7w smd diode SMD Transistor Y4w transistor smd y4p z7p transistor
    Text: UM10321 75 W SSL1750 triac dimmable 230 V mains LED driver Rev. 01 — 9 October 2009 User manual Document information Info Content Keywords SSL 1750, PFC, LED driver, high power, triac, high power factor, mains dimmable Abstract User manual for the SSL1750 230 V AC mains dimmable 75 W, 1000 mA


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    PDF UM10321 SSL1750 UM10321 transistor smd y4w z7w smd transistor Y4W SMD y4p smd transistor Y4W diode transistor smd 1Bp z7w smd diode SMD Transistor Y4w transistor smd y4p z7p transistor

    transistor 1fp

    Abstract: transistor 1Bp BC848 1FP transistor BC847 1Bp transistor NPN BC846B SOT23 BC846 1Lp marking BC846B
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BC846; BC847; BC848 NPN general purpose transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Mar 12 Philips Semiconductors Product specification


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    PDF M3D088 BC846; BC847; BC848 BC856; BC857; BC858. transistor 1fp transistor 1Bp BC848 1FP transistor BC847 1Bp transistor NPN BC846B SOT23 BC846 1Lp marking BC846B

    Y4W SMD

    Abstract: Y4W diode transistor smd y4w transistor smd 1Bp WB1 SOT23 smd transistor 1bt 96 y9w smd zener smd zener y4w 1bt sot23 y4p smd transistor
    Text: UM10394 75 W SSL1750 triac dimmable 120 V mains LED driver Rev. 01 — 9 October 2009 User manual Document information Info Content Keywords SSL1750, LED driver, PFC, high power, triac, high power factor, mains dimmable Abstract User manual for the SSL1750 120 V AC mains dimmable 75 W,


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    PDF UM10394 SSL1750 SSL1750, UM10394 Y4W SMD Y4W diode transistor smd y4w transistor smd 1Bp WB1 SOT23 smd transistor 1bt 96 y9w smd zener smd zener y4w 1bt sot23 y4p smd transistor

    T-CON Schematic

    Abstract: 2DI150M-120 FAJWA 150A 3D M210 T151 B401 OWTR t460 transistor PC2000
    Text: 2 D I1 50M -120 150 a /v ° 7 - h '• Outline Drawings POWER TRANSISTOR MODULE • 4 # ^ : : Features • • • • fca#&iiiiA'i'iSj^ High Arm Short Circuit Capability hFE/^iftu High DC Current Gain 7 *)~ — KF3 Including Freewheeling Diode ifeiHffi Insulated Type


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    PDF 50M-120 E82988 egTS30Â I95t/R89) T-CON Schematic 2DI150M-120 FAJWA 150A 3D M210 T151 B401 OWTR t460 transistor PC2000

    Untitled

    Abstract: No abstract text available
    Text: KSC1222 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY LOW NOISE AMPLIFIER • Col lector-Base Voltage: V Cb o = 5 0 V • Low Noise Level: N L=40mV Max ABSOLUTE MAXIMUM RATINGS (TA=25°C) C haracteristic Sym bol Col lector-Base Voltage C ollector-E m itter Voltage


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    PDF KSC1222

    2DI150M-120

    Abstract: M210 transistor AFR 16
    Text: 2 D I ✓ 1 ^ ^ 5 is M - 1 2 1 5 o a ^ i> il — )\/ POWER TRANSISTOR MODULE : Features • • hFE^'flSl^ High Arm Short Circuit Capability High DC Current Gain ft 4 V's • 7U — • Jfeillffi — KrtJSS Including F reew heeling Diode Insulated Type


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    PDF 2DI150M-120O5OA) E82988 2DI150M-120 M210 transistor AFR 16

    M54571P

    Abstract: 4G08 M54667P DARLINGTON TRANSISTOR ARRAY M63800FP MS4517P transistor array M54523P P2N DIODE M54667
    Text: • TRANSISTOR ARRAYS C ircuit function A SIC s Type No. Typical electrical characteristics Ta = 2 5 “C Input ACTIVE LEVEL Input Input v o ltag e current “V {V T M 54513P/FP M 545UAP/AFP M 545I6P MS4517P M54519P/FP M54522P/FP M 54523P/FP M54526P/FP M54527P


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    PDF 54513P/FP 545UAP/AFP 545I6P MS4517P M54519P/FP M54522P/FP 54523P/FP M54526P/FP M54527P M54528P M54571P 4G08 M54667P DARLINGTON TRANSISTOR ARRAY M63800FP transistor array M54523P P2N DIODE M54667

    B4002D

    Abstract: diode ml35
    Text: 2 D I 1 5 M - 1 2 1 5 0 A ^ ± / \ r7 - :E ^ i L - ; U ' < I7 - h POWER TRANSISTOR MODULE •¡HfS : Features • High Arm Short Circuit Capability • hFE^'Sv.' High DC Current Gain • —ft 'f ' J 's W - i i — KrtflK Including Free Wheeling Diode


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    PDF I95t/R89) B4002D diode ml35

    2DI150M-120

    Abstract: No abstract text available
    Text: 2 D I1 50M -120 150 a /v ° 7 - h '• Outline Drawings POWER TRANSISTOR MODULE • 4 # ^ : : Features • • • • fca#&iiiiA'i'iS j^ High Arm Short Circuit Capability h F E /^iftu High DC Current Gain 7 *)~ — KF3 Including F reew heeling Diode ifeiHffi Insulated Type


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    PDF Rati388-7681 I95t/R89) 2DI150M-120

    Untitled

    Abstract: No abstract text available
    Text: D 2 I ,< rj — 1 M ^ - 1 2 i o o a 3.—JU W ïfé T l'ïi : Outline Drawings POWER TRANSISTOR MODULE • 9U S : Features • JSSSRS^iSSl.' High Arm Short Circuit Capability • hFEfr'Sv.' High DC Current Gain • 7 'J —f r 'f'J > $ ¥ 4 % —KrtSR Including Freewheeling Diode


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    PDF E82988 I95t/R89)

    ed7 diode

    Abstract: 2DI50M-120
    Text: 2DI50M-1 20 50A / ' 7 — \ ~7 '•/'J’ TsÇ I 3.—JU : Outline Drawings POWER TRANSISTOR MODULE Features • • High A rm Short Circuit Capability • h F E *''S v.' High D C C urrent Gain • ~7l) — t M V>9'9*A — KftflR Including Free W heelin g Diode


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    PDF 2DI50M-120 E82988 ed7 diode

    6DI50M-120

    Abstract: P930 T151 T460 T760 b426 mtki B-426 GPR circuit schematic PC1860
    Text: 6 D I5 0 M -1 2 0 5 0 a '<n — POWER TRANSISTOR MODULE W ffi-fk Features • High Arm Short Circuit Capability • High DC Current Gain • 7U— — KrtflS Including Freewheeling Diode • f l & i I n s u l a t e d Type Applications — 9 General Purpose


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    PDF 6DI50M-1 E82986 I95t/R89) Shl50 6DI50M-120 P930 T151 T460 T760 b426 mtki B-426 GPR circuit schematic PC1860

    transistor 1Bp

    Abstract: 1Bp transistor transistor 337 AJ b338
    Text: 1DI300MN-120I300A '•Outline Drawings POWER TRANSISTOR MODULE ■4#^: : Fea tu res • hFE)b''fit' High DC Current Gain • r * - K rt* • s i s w a f t iiE n r jii : A p p licatio n s • ? General Purpose Inverter • Uninterruptible Power Supply • N C X fN R W Servo & Spindle Drive for NC Machine Tools


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    PDF 1DI300MN-120I300A) transistor 1Bp 1Bp transistor transistor 337 AJ b338

    B426

    Abstract: No abstract text available
    Text: 6 D I5 0 M -1 2 0 5 0 a '<n — POWER TRANSISTOR MODULE Features W ffi-fk • High Arm Short Circuit Capability • High DC Current Gain • 7U— — KrtflS Including Freewheeling Diode • f l & i I n s u l a t e d Type Applications • — 9 General Purpose Inverter


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    PDF l95t/R89 B426

    a7v TRANSISTOR

    Abstract: t460 transistor 2DI100M-120 M210 T151 T930
    Text: 2 D I 1 O O Y -? i s i s X ? y 9 _ M - 1 20 i o o a n .— )V : Outline Drawings POWER TRANSISTOR MODULE : Features • High Arm Short Circuit Capability • h F E ^ f i i' • 7 U —f • High DC Current Gain r ' i 1) — KF*Jj Including Free Wheeling Diode


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    PDF 2DI1OOM-120 E82988 19S24 I95t/R89 Shi50 a7v TRANSISTOR t460 transistor 2DI100M-120 M210 T151 T930

    2DI100M-120

    Abstract: transistor w1w 30S3 D1100 M210 T151
    Text: 2 D 1 I O O - M 1 20 i o o a y<7_ POWER TRANSISTOR MODULE : Features • • h F E ^ fii' High Arm Short Circuit Capability High DC Current Gain • 7 ' J — f r ' i 1) • K rtj Including Freew h eelin g Diode Insulated Type •Applications • —? General Purpose Inverter


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    PDF D1100 E82988 12-ti EaT130fà l95t/R89 Shl50 2DI100M-120 transistor w1w 30S3 M210 T151

    transistor kF 303

    Abstract: 03AIW 6DI30M-120 M613
    Text: 6DI30M-1 2 0 3o a ^ ' 7 — h ~7 s ' i s IWfê’+fè : Outline Drawings ^ i s 3 - — )\r POWER TRANSISTOR MODULE : Features • • hFEA^&i,' 7.5 19 I, High Arm Short Circuit Capability High DC Current Gain BU EU □a • 7 U —f c 'f O y — K F*9>0c Including Freewheeling Diode


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    PDF 6DI30M-1 E82988 I95t/R89) transistor kF 303 03AIW 6DI30M-120 M613

    6di50m

    Abstract: No abstract text available
    Text: 6 D I 5 0 M - 1 2 0 5 oa *7 — \ ~7 "S 7* 9 is — JU : Outline Drawings POWER TRANSISTOR MODULE 1 • 4 $ £ : Featu res 14 High Arm Short Circuit Capability F 6 i 17 / & WP tuPEvp| p«P ß ö l^ jj_ ~P H ■ § H fftv ip r f l - r ^ t ù ■A pp lications


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    transistor 1Bp

    Abstract: bc847 1gp transistor bc848 1Lp marking code 1gp 1Bp transistor bc846 BC646B bc847c
    Text: Philips Semiconductors Product specification NPN general purpose transistors BC846; BC847; BC848 FEATURES PINNING • Low current max. 100 mA PIN • Low voltage (max. 65 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • General purpose switching and amplification.


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    PDF BC846; BC847; BC848 BC856; BC857; BC858. BC846 BC846A BC846B BC847 transistor 1Bp 1gp transistor bc848 1Lp marking code 1gp 1Bp transistor BC646B bc847c

    transistor 1fp

    Abstract: 1FP transistor BC847 1gp transistor BC848C transistor 1fp 11 BC848 npn general purpose transistors 1gp npn code 1gp
    Text: DISCRETE SEMICONDUCTORS BC846; BC847; BC848 NPN general purpose transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors 1997 Mar 12 PHILIPS Philips Semiconductors Product specification


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    PDF BC846; BC847; BC848 BC856; BC857; BC858. BC846 BC847C BC846A transistor 1fp 1FP transistor BC847 1gp transistor BC848C transistor 1fp 11 npn general purpose transistors 1gp npn code 1gp

    W1P 59 transistor

    Abstract: W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn
    Text: Philips S em iconductors S urface m oun ted sem ico n d u cto rs C on ten ts PART A page SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors


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    PDF 197/197X S310N W1P 59 transistor W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn

    B426A

    Abstract: 6DI50M120 6DI50M-120 T151 T760 T810
    Text: 6D I50M -120 5 oa '< n — v ^ ± /< 7 =l — )v : Outline Drawings P O W ER T R A N S IS T O R M O D U L E •45JI: : Features • u High Arm Short Circuit Capability • hFE*x'f i l ' High DC Current Gain • 7U— —KrtHS Including Freewheeling Diode


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    PDF 6DI50M-120 E82988 l95t/R89 B426A 6DI50M120 T151 T760 T810

    RRMS

    Abstract: SSM2131
    Text: True RMS-to-DC Converter SSM-2110 ANALOG DEVICES □ _ FEATURES GENERAL DESCRIPTION * Multiple Output Options Absolute Value, RMS, Log RMS, Log Absolute Value, Average Absolute Value * Wide Dynamic Range. 100dB


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    PDF SSM-2110 100dB SSM-2110 FIGURE11: SSM-2013 SSM-2134 OP-215 AN-116. RRMS SSM2131

    RRUS 01

    Abstract: SSM2110P 7107 meters SSM2131 SSM2110 agc amplifier RRUS SSM-2134 18-PIN SSM-2110
    Text: ANALOG DEVICES True RMS-to-DC Converter □ SSM-2110 FEATURES GENERAL DESCRIPTION * M ultiple Output Options Absolute Value, RMS, Log RMS, Log A bsolute Value, A verage Absolute Value * W ide Dynamic R a n g e . 100dB


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    PDF SSM-2110 100dB SSM-2110 liGURE11: SSM-2013 SSM-2134 OP-215 AN-116. RRUS 01 SSM2110P 7107 meters SSM2131 SSM2110 agc amplifier RRUS 18-PIN