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    TRANSISTOR 1B SMD Search Results

    TRANSISTOR 1B SMD Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 1B SMD Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: NSTB60BDW1T1 PNP General Purpose and NPN Bias Resistor Transistor Combination • • • • • Simplifies Circuit Design Reduces Board Space Reduces Component Count Available in 8 mm, 7 inch/3000 Unit Tape and Reel ESD Rating – Human Body Model: Class 1B


    Original     		PDF NSTB60BDW1T1 inch/3000 r14525 NSTB60BDW1T1/D

    sot363 marking code 385

    Abstract: 564 sot363 NSTB60ADW1T1 SMD310
    Text: NSTB60ADW1T1 PNP General Purpose and NPN Bias Resistor Transistor Combination • • • • • Simplifies Circuit Design Reduces Board Space Reduces Component Count Available in 8 mm, 7 inch/3000 Unit Tape and Reel ESD Rating – Human Body Model: Class 1B


    Original     		PDF NSTB60ADW1T1 inch/3000 r14525 NSTB60ADW1T1/D sot363 marking code 385 564 sot363 NSTB60ADW1T1 SMD310

    NSTB60BDW1T1

    Abstract: SMD310
    Text: NSTB60BDW1T1 PNP General Purpose and NPN Bias Resistor Transistor Combination • • • • • Simplifies Circuit Design Reduces Board Space Reduces Component Count Available in 8 mm, 7 inch/3000 Unit Tape and Reel ESD Rating – Human Body Model: Class 1B


    Original     		PDF NSTB60BDW1T1 inch/3000 r14525 NSTB60BDW1T1/D NSTB60BDW1T1 SMD310

    NSTB60BDW1T1

    Abstract: SMD310
    Text: NSTB60BDW1T1 PNP General Purpose and NPN Bias Resistor Transistor Combination • • • • • Simplifies Circuit Design Reduces Board Space Reduces Component Count Available in 8 mm, 7 inch/3000 Unit Tape and Reel ESD Rating – Human Body Model: Class 1B


    Original     		PDF NSTB60BDW1T1 inch/3000 r14525 NSTB60BDW1T1/D NSTB60BDW1T1 SMD310

    564 sot363

    Abstract: No abstract text available
    Text: NSTB60ADW1T1 PNP General Purpose and NPN Bias Resistor Transistor Combination • • • • • Simplifies Circuit Design Reduces Board Space Reduces Component Count Available in 8 mm, 7 inch/3000 Unit Tape and Reel ESD Rating – Human Body Model: Class 1B


    Original     		PDF NSTB60ADW1T1 inch/3000 r14525 NSTB60ADW1T1/D 564 sot363

    sot-363 Package material

    Abstract: No abstract text available
    Text: NSTB60BDW1T1 PNP General Purpose and NPN Bias Resistor Transistor Combination • • • • • Simplifies Circuit Design Reduces Board Space Reduces Component Count Available in 8 mm, 7 inch/3000 Unit Tape and Reel ESD Rating – Human Body Model: Class 1B


    Original     		PDF NSTB60BDW1T1 inch/3000 r14525 NSTB60BDW1T1/D sot-363 Package material

    transistor smd 1E

    Abstract: SMD Transistor 1f TRANSISTOR SMD MARKING CODE 1l TRANSISTOR SMD MARKING CODE 1a SMD transistor 1L 1b smd transistor smd transistor marking 1B SMD TRANSISTOR MARKING 1F transistor SMD 520 MARKING SMD npn TRANSISTOR 1a
    Text: SMD General Purpose Transistor NPN BC846/BC847/BC848 SMD General Purpose Transistor (NPN) Features • NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications Mechanical Data SOT-23 SOT-23, Plastic Package Case: Solderable per MIL-STD-202G, Method 208


    Original     		PDF BC846/BC847/BC848 OT-23 OT-23, MIL-STD-202G, BC846A BC847A BC847B BC847C BC848A BC848B transistor smd 1E SMD Transistor 1f TRANSISTOR SMD MARKING CODE 1l TRANSISTOR SMD MARKING CODE 1a SMD transistor 1L 1b smd transistor smd transistor marking 1B SMD TRANSISTOR MARKING 1F transistor SMD 520 MARKING SMD npn TRANSISTOR 1a

    BC847 smd

    Abstract: smd TRANSISTOR 1D SMD TRANSISTOR MARKING 1D SMD Transistor 1f SMD TRANSISTOR MARKING 1B 1F transistor smd SMD Transistor BC847 smd transistor footprint smd transistor marking 1h 1D smd transistor
    Text: Transistors IC SMD Type NPN General Purpose Transistor BC846,BC847,BC848 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 Low current max. 100 mA . 0.4 3 1 0.55 Low voltage (max. 65 V). 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1


    Original     		PDF BC846 BC847 BC848 OT-23 BC846 BC847 BC846A BC846B BC847 smd smd TRANSISTOR 1D SMD TRANSISTOR MARKING 1D SMD Transistor 1f SMD TRANSISTOR MARKING 1B 1F transistor smd SMD Transistor BC847 smd transistor footprint smd transistor marking 1h 1D smd transistor

    TRANSISTOR SMD MARKING CODE p1

    Abstract: TRANSISTOR SMD CODE PACKAGE SOT323 TRANSISTOR SMD MARKING CODE d2 TRANSISTOR SMD MARKING CODE ce TRANSISTOR SMD MARKING CODE oc smd transistor marking code P MARKING CODE SMD IC TRANSISTOR SMD MARKING CODE 1l SMD TRANSISTOR MARKING 1B SMD TRANSISTOR MARKING 28
    Text: COMCHIP Small Signal Transistor SMD Diodes Specialist BC846AW-G Thru. BC848CW-G NPN RoHS Device Features -Power dissipation O PCM: 0.15W (@TA=25 C) -Collector current ICM: 0.1A -Collector-base voltage VCBO: BC846W=80V BC847W=50V BC848W=30V -Operating and storage junction temperature


    Original     		PDF BC846AW-G BC848CW-G BC846W BC847W BC848W OT-323 OT-323, MIL-STD-750, QW-BTR35 BC846AW-G TRANSISTOR SMD MARKING CODE p1 TRANSISTOR SMD CODE PACKAGE SOT323 TRANSISTOR SMD MARKING CODE d2 TRANSISTOR SMD MARKING CODE ce TRANSISTOR SMD MARKING CODE oc smd transistor marking code P MARKING CODE SMD IC TRANSISTOR SMD MARKING CODE 1l SMD TRANSISTOR MARKING 1B SMD TRANSISTOR MARKING 28

    smd transistor marking 1B

    Abstract: SMD TRANSISTOR MARKING 1F smd TRANSISTOR 1D SMD TRANSISTOR MARKING 1M smd transistor marking 1E SMD Transistor 1f SMD TRANSISTOR MARKING 1D smd 1G SMD transistor MARKING 65 smd transistor 1g
    Text: Transistors IC SMD Type NPN General Purpose Transistor BC846W,BC847W,BC848W Features Low current max. 100 mA . Low voltage (max. 65 V). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol BC846W BC847W BC848W Unit Collector-base voltage Parameter


    Original     		PDF BC846W BC847W BC848W BC846W BC847W BC846AW BC846BW BC847AW smd transistor marking 1B SMD TRANSISTOR MARKING 1F smd TRANSISTOR 1D SMD TRANSISTOR MARKING 1M smd transistor marking 1E SMD Transistor 1f SMD TRANSISTOR MARKING 1D smd 1G SMD transistor MARKING 65 smd transistor 1g

    transistor smd 1E

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification BC846,BC847,BC848 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 Low current max. 100 mA . 0.4 3 1 0.55 Low voltage (max. 65 V). 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1


    Original     		PDF BC846 BC847 BC848 OT-23 BC846 BC847 BC846A BC846B transistor smd 1E

    Transistors smd 1G

    Abstract: SMD TRANSISTOR MARKING 1B smd transistor marking 1j SMD TRANSISTOR MARKING 1F SMD Transistor 1f marking 1A smd transistor 1l smd transistor marking 1L 1F transistor smd MARKING SMD TRANSISTOR 1j
    Text: Transistors SMD Type NPN Transistor KC846A,B/KC847A,B,C/KC848A,B,C BC846A,B/BC847A,B,C/BC848A,B,C SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 Ideally suited for automatic insertion 0.4 3 1 0.55 For Switching and AF Amplifier Applications


    Original     		PDF KC846A B/KC847A C/KC848A BC846A B/BC847A C/BC848A OT-23 KC846 KC847 KC848 Transistors smd 1G SMD TRANSISTOR MARKING 1B smd transistor marking 1j SMD TRANSISTOR MARKING 1F SMD Transistor 1f marking 1A smd transistor 1l smd transistor marking 1L 1F transistor smd MARKING SMD TRANSISTOR 1j

    SGA-3563Z

    Abstract: SGA5263Z SGA-4563Z SGA-5263z A102 TRANSISTOR ESD test plan SGA-8343Z sga8343z SGA3563Z SGA-0363Z
    Text: Reliability Qualification Report SGA-5263Z Products Qualified by Similarity SGA-4563Z/4463Z/4363Z/4263Z/4163Z SGA-3563Z/3463Z/3363Z/3263Z SGA-2463Z/2363Z/2263Z/2163Z SGA-1263Z/1163Z SGA-0363Z/0163Z SGA-8343Z SGL-0263Z/0163Z 303 S. Technology Ct, Broomfield CO, 80021


    Original     		PDF SGA-5263Z SGA-4563Z/4463Z/4363Z/4263Z/4163Z SGA-3563Z/3463Z/3363Z/3263Z SGA-2463Z/2363Z/2263Z/2163Z SGA-1263Z/1163Z SGA-0363Z/0163Z SGA-8343Z SGL-0263Z/0163Z RQR-103792 SGA-5263Z SGA-3563Z SGA5263Z SGA-4563Z A102 TRANSISTOR ESD test plan SGA-8343Z sga8343z SGA3563Z SGA-0363Z

    SOT-23

    Abstract: TRANSISTOR SMD fr 21 smd transistor ds 65
    Text: Formosa MS SMD NPN Transistor BC846A/B-BC847A/B/C BC848A/B/C- BC849B/C-BC850B/C List List. 1 Package outline. 2


    Original     		PDF BC846A/B-BC847A/B/C BC848A/B/C- BC849B/C-BC850B/C 1000hrs 15min) 15min 20sec 1000cycle 96hrs SOT-23 TRANSISTOR SMD fr 21 smd transistor ds 65

    smd TRANSISTOR 1D

    Abstract: SMD TRANSISTOR MARKING 1D SMD TRANSISTOR MARKING 1F smd transistor 1g SMD TRANSISTOR MARKING 1B transistor smd 1E ts 4141 TRANSISTOR smd 1D smd transistor TRANSISTOR smd 1D smd transistor marking 1h
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS BC846W , 847W, 848W SOT-323 Formed SMD Package NPN Marking BC846W =1D BC847AW =1E BC846AW =1A BC847BW =1F BC846BW =1B BC847CW =1G


    Original     		PDF BC846W OT-323 BC847AW BC846AW BC847BW BC846BW BC847CW BC847W BC848W smd TRANSISTOR 1D SMD TRANSISTOR MARKING 1D SMD TRANSISTOR MARKING 1F smd transistor 1g SMD TRANSISTOR MARKING 1B transistor smd 1E ts 4141 TRANSISTOR smd 1D smd transistor TRANSISTOR smd 1D smd transistor marking 1h

    kds9

    Abstract: TRANSISTOR SMD 13W SMD 13W Transistor Mosfet N-Ch 30V KDS9952A 1c smd transistor SMD Transistor nc Dual N & P-Channel MOSFET
    Text: Transistors IC SMD Type Dual N & P-Channel Enhancement Mode Field Effect Transistor KDS9952A Features N-Channel 3.7A, 30V, RDS ON =0.08W @ VGS=10V. P-Channel -2.9A, -30V, RDS(ON)=0.13W @ VGS=-10V. High density cell design or extremely low RDS(ON). High power and current handling capability in a widely used


    Original     		PDF KDS9952A kds9 TRANSISTOR SMD 13W SMD 13W Transistor Mosfet N-Ch 30V KDS9952A 1c smd transistor SMD Transistor nc Dual N & P-Channel MOSFET

    transistor smd marking PE

    Abstract: SMD TRANSISTOR MARKING 1D transistor smd marking PE 1b
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS BC846W , 847W, 848W SOT-323 Formed SMD Package NPN Marking BC846W =1D BC847AW =1E BC846AW =1A BC847BW =1F BC846BW =1B BC847CW =1G


    Original     		PDF BC846W OT-323 BC847AW BC846AW BC847BW BC846BW BC847CW BC847W BC848W transistor smd marking PE SMD TRANSISTOR MARKING 1D transistor smd marking PE 1b

    HS-22620RH

    Abstract: S13N4 AL SMD transistor HS2262 5962F9751201V9A 5962F9751201VXC HS0-22620RH-Q HS9-22620RH-Q smd transistor v2 uncompensated operational amplifier
    Text: HS-22620RH Data Sheet August 1999 Rad Hard Dual, Wideband, High Input Impedance Uncompensated Operational Amplifier File Number 4349.1 Features • Electrically Screened to SMD # 5962-97512 • QML Qualified per MIL-PRF-38535 Requirements The HS-22620RH is a radiation hardened, dual bipolar


    Original     		PDF HS-22620RH MIL-PRF-38535 HS-22620RH S13N4) S13N4 AL SMD transistor HS2262 5962F9751201V9A 5962F9751201VXC HS0-22620RH-Q HS9-22620RH-Q smd transistor v2 uncompensated operational amplifier

    Untitled

    Abstract: No abstract text available
    Text: TDA7255V ASK/FSK 434 MHz Wireless Transceiver Data Sheet Revision 1.1, 2010-11-10 Wireless Sense & Control Edition 2010-11-10 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer


    Original     		PDF TDA7255V TSS-6035 MCTAEF-25N-V BAR63-02W SCD-80 20-pol. -20DS-0

    hirose 6 pin serial 9 pin cable trimble

    Abstract: on15 MIPI bridge smd diode S6 1b teaklite CI136
    Text: TDA7255V ASK/FSK 434 MHz Wireless Transceiver Data Sheet Revision 1.1, 2010-11-10 Wireless Sense & Control Edition 2010-11-10 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer


    Original     		PDF TDA7255V TSS-6035 MCTAEF-25N-V SCD-80 -20DS-0 BAR63-02W 20-pol. hirose 6 pin serial 9 pin cable trimble on15 MIPI bridge smd diode S6 1b teaklite CI136

    Untitled

    Abstract: No abstract text available
    Text: • t.tS3^31 DDEbOOb fifl3 N AUER PHILIPS/DISCRETE APX PZT3906 b?E ]> J V. SILICON PLANAR EPITAXIAL TRANSISTOR PNP transistor in a microminiature SMD envelope SOT-223 . Designed primarily fo r high-speed, saturated switching applications in industrial service.


    OCR Scan     		PDF PZT3906 OT-223)

    TRANSISTOR SMD CODE B7

    Abstract: TRANSISTOR SMD MARKING CODE B7 transistor smd marking JT smd transistor kn transistor p2a smd TRANSISTOR code b7 MARKING CODE SMD IC smd transistor marking PA K TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE
    Text: m ^53=131 DDESÖbb blfl • APX N AHER PHILIPS/DISCRETE b?E T> PMBT3906 -/ V_ SILICON EPITAXIAL TRANSISTOR P-N-P transistor in a m icrom iniature SMD plastic envelope intended fo r surface mounted applications.


    OCR Scan     		PDF PMBT3906 PMBT3906 TRANSISTOR SMD CODE B7 TRANSISTOR SMD MARKING CODE B7 transistor smd marking JT smd transistor kn transistor p2a smd TRANSISTOR code b7 MARKING CODE SMD IC smd transistor marking PA K TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE

    BUD620

    Abstract: E2 p SMD Transistor
    Text: Temic BUD620 S e m i c o n d u c t o r s Silicon NPN High Voltage Switching Transistor Features • Simple-sWitch-Off Transistor SWOT Very low dynamic saturation HIGH SPEED technology Very low operating temperature Planar passivation Optimized RBSOA 100 kHz switching rate


    OCR Scan     		PDF BUD620 BUD620 D-74025 18-Jul-97 E2 p SMD Transistor

    buz102

    Abstract: No abstract text available
    Text: SIEMENS BUZ 102 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/d/ rated • Low on-resistance • 175°C operating temperature • also in TO-220 SMD available Pin 1 Pin 2 Type Vbs BUZ102 50 V b 42 A Pin 3 D G S ^DS on


    OCR Scan     		PDF O-220 BUZ102 C67078-S1351-A2 fl23Sb05 023Sfc 35bQ5 00fl45b buz102