1AM MMBT3904
Abstract: transistors 1am transistor 1am
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3904 TRANSISTOR NPN FEATURES z Complementary Type The PNP Transistor MMBT3906 is Recommended z Epitaxial Planar Die Construction SOT-23 (3)C MARKING: 1AM 1AM Code
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OT-23
MMBT3904
MMBT3906
OT-23
1AM MMBT3904
transistors 1am
transistor 1am
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LMBT3904LT1G
Abstract: equivalent of 1AM 1am equivalent 1N916 1AM marking transistor sot-23 Marking 1am 1aM sot-23 transistor
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistor • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish LMBT3904LT1G ORDERING INFORMATION Device Marking Shipping 3 LMBT3904LT1G 1AM 3000/Tape & Reel LMBT3904LT3G 1AM 10000/Tape & Reel
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LMBT3904LT1G
3000/Tape
LMBT3904LT3G
10000/Tape
OT-23
LMBT3904LT1G
equivalent of 1AM
1am equivalent
1N916
1AM marking transistor
sot-23 Marking 1am
1aM sot-23 transistor
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1AM marking transistor
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistor • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish LMBT3904LT1G ORDERING INFORMATION Device Marking Shipping 3 LMBT3904LT1G 1AM 3000/Tape & Reel LMBT3904LT3G 1AM 10000/Tape & Reel
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LMBT3904LT1G
3000/Tape
LMBT3904LT3G
10000/Tape
OT-23
1AM marking transistor
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistor • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish LMBT3904LT1G ORDERING INFORMATION Device Marking Shipping 3 LMBT3904LT1G 1AM 3000/Tape & Reel LMBT3904LT3G 1AM 10000/Tape & Reel
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LMBT3904LT1G
3000/Tape
LMBT3904LT3G
10000/Tape
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1AM marking transistor
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3904 TRANSISTOR NPN SOT-23 FEATURES z As complementary type the PNP transistor MMBT3906 is recommended z Epitaxial planar die construction MARKING: 1AM 1. BASE
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OT-23
MMBT3904
OT-23
MMBT3906
100mA
100MHz
1AM marking transistor
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 MMBT3904 Plastic-Encapsulate Transistors TRANSISTOR NPN SOT-23 FEATURES z As complementary type the PNP transistor MMBT3906 is recommended z Epitaxial planar die construction MARKING: 1AM 1. BASE
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OT-23
MMBT3904
MMBT3906
100mA
100MHz
10mAdc
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transistor marking 1am
Abstract: transistor 1am MMBT3904 MMBT3906 MMBT3904 jiangsu 1AM F
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3904 SOT–23 TRANSISTOR NPN FEATURES z Complementary Type The PNP Transistor MMBT3906 is Recommended z Epitaxial Planar Die Construction MARKING: 1AM 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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OT-23
MMBT3904
MMBT3906
-55ENT
transistor marking 1am
transistor 1am
MMBT3904
MMBT3904 jiangsu
1AM F
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sot23 marking 1AM
Abstract: MARKING 1AM 1AM marking transistor transistor 1am MMBT3904 SOT-23 1AM SOT23 1AM transistor transistor marking 1am 1AM sot-23 sot23 1am
Text: MMBT3904 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features As complementary type the PNP transistor MMBT3906 is recommended Epitaxial planar die construction MARKING: 1AM MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter
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MMBT3904
OT-23
OT-23
MMBT3906
100mA
100MHz
10mAdc
sot23 marking 1AM
MARKING 1AM
1AM marking transistor
transistor 1am
MMBT3904 SOT-23
1AM SOT23
1AM transistor
transistor marking 1am
1AM sot-23
sot23 1am
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transistor 1am
Abstract: 1AM transistor 1AM c 1aM sot-23 transistor 1AM sot 23 1AM MMBT3904 1AM+SOT-23
Text: MMBT3904 300mW, NPN Small Signal Transistor Small Signal Transistor SOT-23 3 Collector A 1 Base F 2 Emitter B Features E Epitaxial planar die construction Surface device type mounting C Moisture sensitivity level 1 G D Matte Tin Sn lead finish with Nickel(Ni) underplate
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MMBT3904
300mW,
OT-23
MIL-STD-202,
transistor 1am
1AM transistor
1AM c
1aM sot-23 transistor
1AM sot 23
1AM MMBT3904
1AM+SOT-23
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1AM c
Abstract: 1AM marking transistor
Text: MMBT3904 300mW, NPN Small Signal Transistor Small Signal Transistor SOT-23 3 Collector A 1 Base F 2 Emitter B Features E Epitaxial planar die construction Surface device type mounting C Moisture sensitivity level 1 G D Matte Tin Sn lead finish with Nickel(Ni) underplate
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MMBT3904
300mW,
OT-23
MIL-STD-202,
1AM c
1AM marking transistor
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transistor 1am
Abstract: 1AM marking transistor 1AM transistor transistor marking 1am 1AM marking transistor marking code 1am sot23 marking 1AM sot-23 Marking 1am 1AM F marking code 1am
Text: MMBT3904 300mW, NPN Small Signal Transistor Small Signal Transistor SOT-23 3 Collector A 1 Base F 2 Emitter B Features E Epitaxial planar die construction Surface device type mounting C Moisture sensitivity level 1 G D Matte Tin Sn lead finish with Nickel(Ni) underplate
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PDF
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MMBT3904
300mW,
OT-23
MIL-STD-202,
transistor 1am
1AM marking transistor
1AM transistor
transistor marking 1am
1AM marking
transistor marking code 1am
sot23 marking 1AM
sot-23 Marking 1am
1AM F
marking code 1am
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1am marking sot-23
Abstract: 1AM marking transistor
Text: General Purpose Transistor MMBT3904-G NPN RoHS Device Features SOT-23 -Epitaxial planar die construction 0.120 (3.04) 0.110 (2.80) -As complementary type, the PNP 3 transistor MMBT3904-G is recommended 0.055 (1.40) 0.047 (1.20) 1 0.080 (2.04) 0.070 (1.78)
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MMBT3904-G
OT-23
MMBT3904-G
QW-BTR01
1am marking sot-23
1AM marking transistor
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT3904 TRANSISTOR NPN FEATURES z As complementary type, the PNP transistor MMBT3906 is Recommended z Epitaxial planar die construction 1. BASE 2. EMITTER 3. COLLECTOR
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OT-23
OT-23
MMBT3904
MMBT3906
100mA
100MHz
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT3904 TRANSISTOR NPN FEATURES z As complementary type, the PNP transistor MMBT3906 is Recommended z Epitaxial planar die construction 1. BASE 2. EMITTER 3. COLLECTOR
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OT-23
OT-23
MMBT3904
MMBT3906
100mA
100MHz
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MMBT3904-HF
Abstract: transistor 1am marking code SS SOT23 transistor 1AM marking transistor transistor marking 1am 1aM sot-23 transistor 1AM sot 23 transistor marking code 1am SS TRANSISTOR IN SOT 23 PACKAGING
Text: General Purpose Transistor MMBT3904-HF NPN RoHS Device Halogen Free SOT-23 Features 0.118(3.00) -Epitaxial planar die construction 0.110(2.80) 3 -As complementary type, the PNP 0.055(1.40) transistor MMBT3904-HF is recommended 0.047(1.20) 1 2 0.006(0.15)
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MMBT3904-HF
OT-23
MMBT3904-HF
QW-JTR02
OT-23
transistor 1am
marking code SS SOT23 transistor
1AM marking transistor
transistor marking 1am
1aM sot-23 transistor
1AM sot 23
transistor marking code 1am
SS TRANSISTOR IN SOT 23 PACKAGING
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Untitled
Abstract: No abstract text available
Text: General Purpose Transistor MMBT3904-HF NPN RoHS Device Halogen Free SOT-23 Features 0.118(3.00) -Epitaxial planar die construction 0.110(2.80) 3 -As complementary type, the PNP 0.055(1.40) transistor MMBT3904-HF is recommended 0.047(1.20) 1 2 0.006(0.15)
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MMBT3904-HF
OT-23
MMBT3904-HF
QW-JTR02
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TRANSISTOR SMD MARKING CODE 1AM
Abstract: smd transistor 1AM smd 1AM SMD MARKING CODE 1am MMBT3904-HF SMD TRANSISTOR MARKING 1am 1am smd marking code SS SOT23 MARKING SMD PNP TRANSISTOR 1am 1am smd transistor
Text: General Purpose Transistor SMD Diodes Specialist MMBT3904-HF NPN RoHS Device Features -Halogen Free -Epitaxial planar die construction SOT-23 0.118(3.00) 0.110(2.80) -As complementary type, the PNP 3 transistor MMBT3904-HF is recommended 0.055(1.40) 0.047(1.20)
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MMBT3904-HF
OT-23
MMBT3904-HF
QW-HTR02
TRANSISTOR SMD MARKING CODE 1AM
smd transistor 1AM
smd 1AM
SMD MARKING CODE 1am
SMD TRANSISTOR MARKING 1am
1am smd
marking code SS SOT23
MARKING SMD PNP TRANSISTOR 1am
1am smd transistor
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1AM transistor
Abstract: No abstract text available
Text: General Purpose Transistor MMBT3904-G NPN RoHS Device Features SOT-23 -Epitaxial planar die construction 0.118(3.00) 0.110(2.80) -As complementary type, the PNP 3 transistor MMBT3904-G is recommended 0.055(1.40) 0.047(1.20) 1 2 0.079(2.00) Collector 3 0.006(0.15)
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MMBT3904-G
OT-23
MMBT3904-G
QW-BTR01
1AM transistor
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1AM marking transistor
Abstract: transistor 1am transistor marking 1am MARKING 1AM sot23 marking 1AM MMBT3904LT1 1AM 1AM marking MMBT3904LT1 1AM transistor sot-23 Marking 1am
Text: @vic MMBT3904LT1 SOT-23 Plastic-Encapsulate Transistors MMBT3904LT1 SOT-23 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES 3. COLLECTOR W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current 0.2 A ICM: Collector-base voltage 60 V V(BR)CBO: Operating and storage junction temperature range
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MMBT3904LT1
OT-23
OT-23
10mAdc,
10mAdc
100MHz
MMBT3904LT1
1AM marking transistor
transistor 1am
transistor marking 1am
MARKING 1AM
sot23 marking 1AM
MMBT3904LT1 1AM
1AM marking
1AM transistor
sot-23 Marking 1am
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 MMBT3904LT1 TRANSISTOR( NPN ) 1. BASE 2. EMITTER 3. COLLECTOR W(Tamb=25℃) 2.4 1.3 Operating and storage junction temperature range T J ,T stg: -55℃ to +150℃
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OT-23
MMBT3904LT1
MMBT3904LT1
100MHz
037TPY
950TPY
550REF
022REF
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3904LT1 SOT-23 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES 3. COLLECTOR W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current 0.2 A ICM: Collector-base voltage
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OT-23
MMBT3904LT1
OT-23
10mAdc,
10mAdc
MMBT3904LT1
100MHz
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LMBT3908LT1G
Abstract: 1AM 6 1AM c
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistor • Pb−Free Package May be Available. The G−Suffix Denotes a • Pb−Free Lead Finish S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
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AEC-Q101
LMBT3908LT1G
S-LMBT3908LT1G
LMBT3908LT3G
S-LMBT3908LT3G
3000/Tape
10000/Tape
LMBT3908LT1G
1AM 6
1AM c
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transistor marking 1am
Abstract: No abstract text available
Text: TO SH IB A RN1412,RN1413 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN 1Am 17 1 3v r m g uRm N u -m 1u A•■ u m u 'm m Unit in mm SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT A N D DRIVER CIRCUIT APPLICATIONS. + 0.5 3.5-as ■ I 0.ÍÍ5
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OCR Scan
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RN1412
RN1413
RN2412,
RN2413
RN1412
transistor marking 1am
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TRANSISTOR BFW 11
Abstract: BFW93 C11B
Text: BFW 93 NPN SILICON TRANSISTOR, EP ITAXIAL PLANAR TRANSISTOR NPN S ILIC IU M , PLA N A R E P IT A X IA L VHF-UHF applications. Wide band aerial amplifiers Applications VHF-UHF. Am plificateurs fantenne & large bands V CEO 10 V 'c m 100 mA h2iE<!30 mA 25 f j ( 5 0 imA)
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OCR Scan
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CB-146
BFW93
n430n
TRANSISTOR BFW 11
BFW93
C11B
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