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    TRANSISTOR 1801 Search Results

    TRANSISTOR 1801 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 1801 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NEC 2501

    Abstract: TC-2178 resistor UJ marking
    Text: DATAEvaluation SHEET AdLib OCR IVEC ELECTRON DEVICE SILICON TRANSISTOR- GN1F4Z MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR FEATURES PACKAGE DIMENSIONS in millimeters 0 Resistor Built-in TYPE 2.1+0 .1 Maximum Voltages and Cur ents T, 25 OC


    Original     		PDF TC-2178 1988M NEC 2501 TC-2178 resistor UJ marking

    ocr b

    Abstract: C5 MARKING TRANSISTOR FF 50 R 12 KF2
    Text: DATAEvaluation SHEET AdLib OCR IVEC SILICON TRANSISTOR ELECTRON DEVICE I GN1A3Q - MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR i FEATURES PACKAGE DIMENSIONS in millimeters 9 Resistors Built-in TYPE 2.1+0 .1 1.25±0.1 04 . - a 'c~ Ln C5 -H Oi


    Original     		PDF TC-2172 1988M ocr b C5 MARKING TRANSISTOR FF 50 R 12 KF2

    transistor A4P

    Abstract: MARKING A4P
    Text: DATAEvaluation SHEET AdLib OCR NEC ELECTRON DEVICE SILICON TRANSISTOR GN1A4P MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR FEATURES 0 Resistors Built-in TYPE PACKAGE DIMENSIONS in millimeters 2.1+0 .1 1.25±0.1 C B Rl = 10 k92 R2 = 47 k92 R1


    Original     		PDF TC-2174 1988M transistor A4P MARKING A4P

    transistor a4z

    Abstract: No abstract text available
    Text: DATA SHEET AdLib OCR Evaluation NEC SILICON TRANSISTOR ELECTRON DEVICE GN1A4Z MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR FEATURES PACKAGE DIMENSIONS in millimeters 0 Resistor Built-in TYPE C B 2.1+0.1 R1 = 10 kE2 RI 1.25±0.1 E Complementary to GA1A4Z


    Original     		PDF TC-2175 1988M transistor a4z

    Untitled

    Abstract: No abstract text available
    Text: 62 7  % BFU520 NPN wideband silicon RF transistor Rev. 1 — 20 February 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143B package.


    Original     		PDF BFU520 OT143B BFU520 AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: 62 7  % BFU520X NPN wideband silicon RF transistor Rev. 1 — 20 February 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143B package.


    Original     		PDF BFU520X OT143B BFU520X AEC-Q101

    transistor 5d

    Abstract: TC-2177 IC S350 marking s350
    Text: AdLib OCR DATA SHEET Evaluation IVEC SILICON TRANSISTOR ELECTRON DEVICE GN1F4N MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR FEATURES PACKAGE DIMENSIONS in millimeters a Resistors Built-in TYPE C 2.1+0 .1 1 .25±0.1 z + p C5 C5 +1 M N U:~ Ci


    Original     		PDF TC-2177 1988M transistor 5d TC-2177 IC S350 marking s350

    Untitled

    Abstract: No abstract text available
    Text: BFU520XR NPN wideband silicon RF transistor Rev. 1 — 5 March 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143R package. The BFU520XR is part of the BFU5 family of transistors, suitable for small signal to


    Original     		PDF BFU520XR OT143R BFU520XR AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: BFU530XR NPN wideband silicon RF transistor Rev. 1 — 5 March 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143R package. The BFU530XR is part of the BFU5 family of transistors, suitable for small signal to


    Original     		PDF BFU530XR OT143R BFU530XR AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: BFU550XR NPN wideband silicon RF transistor Rev. 1 — 14 March 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143R package. The BFU550XR is part of the BFU5 family of transistors, suitable for small signal to


    Original     		PDF BFU550XR OT143R BFU550XR AEC-Q101

    BFU590G

    Abstract: No abstract text available
    Text: 62 7  BFU580G NPN wideband silicon RF transistor Rev. 1 — 28 April 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, medium power applications in a plastic, 4-pin SOT223 package. The BFU580G is part of the BFU5 family of transistors, suitable for small signal to medium


    Original     		PDF BFU580G OT223 BFU580G AEC-Q101 BFU590G

    Untitled

    Abstract: No abstract text available
    Text: 62 7  BFU590Q NPN wideband silicon RF transistor Rev. 1 — 28 April 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, medium power applications in a plastic, 3-pin SOT89 package. The BFU590Q is part of the BFU5 family of transistors, suitable for small signal to medium


    Original     		PDF BFU590Q BFU590Q AEC-Q101 BFU590QX

    Untitled

    Abstract: No abstract text available
    Text: 62 7  BFU580Q NPN wideband silicon RF transistor Rev. 1 — 28 April 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, medium power applications in a plastic, 3-pin SOT89 package. The BFU580Q is part of the BFU5 family of transistors, suitable for small signal to medium


    Original     		PDF BFU580Q BFU580Q AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: 62 7  BFU590G NPN wideband silicon RF transistor Rev. 1 — 28 April 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, medium power applications in a plastic, 4-pin SOT223 package. The BFU590G is part of the BFU5 family of transistors, suitable for small signal to medium


    Original     		PDF BFU590G OT223 BFU590G AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: 62 7  BFU590Q NPN wideband silicon RF transistor Rev. 1 — 28 April 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, medium power applications in a plastic, 3-pin SOT89 package. The BFU590Q is part of the BFU5 family of transistors, suitable for small signal to medium


    Original     		PDF BFU590Q BFU590Q AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: 62 7  BFU530A NPN wideband silicon RF transistor Rev. 1 — 13 January 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 3-pin SOT23 package. The BFU530A is part of the BFU5 family of transistors, suitable for small signal to medium


    Original     		PDF BFU530A BFU530A AEC-Q101

    BFU590G

    Abstract: No abstract text available
    Text: 62 7  BFU590G NPN wideband silicon RF transistor Rev. 1 — 28 April 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, medium power applications in a plastic, 4-pin SOT223 package. The BFU590G is part of the BFU5 family of transistors, suitable for small signal to medium


    Original     		PDF BFU590G OT223 BFU590G AEC-Q101 BFU590GX

    Untitled

    Abstract: No abstract text available
    Text: BFU520Y Dual NPN wideband silicon RF transistor Rev. 1 — 20 February 2014 Product data sheet 1. Product profile 1.1 General description Dual NPN silicon RF transistor for high speed, low noise applications in a plastic, 6-pin SOT363 package. The BFU520Y is part of the BFU5 family of transistors, suitable for small signal to medium


    Original     		PDF BFU520Y OT363 BFU520Y AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: 62 7  BFU520W NPN wideband silicon RF transistor Rev. 1 — 13 January 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 3-pin SOT323 package. The BFU520W is part of the BFU5 family of transistors, suitable for small signal to


    Original     		PDF BFU520W OT323 BFU520W AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: 62 7  BFU550W NPN wideband silicon RF transistor Rev. 1 — 13 January 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 3-pin SOT323 package. The BFU550W is part of the BFU5 family of transistors, suitable for small signal to


    Original     		PDF BFU550W OT323 BFU550W AEC-Q101

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


    OCR Scan     		PDF

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


    OCR Scan     		PDF

    1N6227

    Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    High-Voltage Amplifiers

    Abstract: 2SC3676 SC46 T0220AB
    Text: Ordering num ber:EN 1801E 2SC3676 NPN Triple Diffused Planar Silicon Transistor High-Voltage Amp, High-Voltage Switching Applications Applications • High-voltage amplifiers. •High-voltage switching applications. • Dynamic focus applications. Features


    OCR Scan     		PDF 1801E 2SC3676 High-Voltage Amplifiers SC46 T0220AB