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    TRANSISTOR 1765 Search Results

    TRANSISTOR 1765 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC CA3082 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC CA3081 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 1765 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFS 17W NPN Silicon RF Transistor • For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA BFS 17W MCs 1= B Q62702-F1645 Package O Pin Configuration II CO Marking Ordering Code LU II C\J Type SOT-323 Maximum Ratings of any single Transistor


    OCR Scan     		Q62702-F1645 OT-323 D1521L5 fl235LD5 A235b05 01521b? PDF

    c3600

    Abstract: 2SC3600 2SA1406 1765A 2SA406
    Text: O rd e rin g n u m b e r : EN 1765 A 2SA1406/2SC3600 N0.1765A PNP/NPN Epitaxial Planar Silicon Transistor Ultrahigh-Definition CRT Display _Video Output Applications i Applications . Ultrahigh-definition CRT display. . Video dutput. . Color TV chroma output.


    OCR Scan     		2SA1406/2SC3600 400MHz. VCEOg200V 2SA1406 c3600 2SC3600 2SA1406 1765A 2SA406 PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number: EN 3181A _ 2SA1765 PNP Epitaxial Planar Silicon Transistor High-Speed Switching Applications F e a tu re s • Fast switching speed - Low collector saturation voltage • High gain-bandwidth product • Small collector capacitance


    OCR Scan     		2SA1765 2SC4454 ur200MO/6279MO PDF

    CBVK741B019

    Abstract: F011 F63TNR F852 FDS9953A L86Z NDS8426
    Text: September 1997 NDS8426 Single N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


    Original     		NDS8426 CBVK741B019 F011 F63TNR F852 FDS9953A L86Z NDS8426 PDF

    SD6000

    Abstract: NDS8426
    Text: September 1997 NDS8426 Single N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


    Original     		NDS8426 NDS8426 SD6000 PDF

    TRANSISTOR D 1765

    Abstract: C3600 2SC600 2SA1406 2SA140
    Text: Ordering number: EN 1765A 2SA1406/2SC3600 Silicon PNP/NPN Epitaxial Planar Transistor Ve r y Hi g h -De f i n i t io n CRT D i s p l a y V id e o Ou t p u t Ap p l i c a t i o n s Applications . Very high-definition CRT display. . Video output. . Color TV chroma output.


    OCR Scan     		2SA1406/2SC3600 400MHz. 2SA1406 TRANSISTOR D 1765 C3600 2SC600 2SA1406 2SA140 PDF

    NDS8426

    Abstract: No abstract text available
    Text: September 1997 NDS8426 Single N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


    Original     		NDS8426 NDS8426 PDF

    1A98

    Abstract: NDS8426 ISS 99 diode
    Text: N July 1996 NDS8426 Single N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially tailored


    Original     		NDS8426 NDS8426 1A98 ISS 99 diode PDF

    Untitled

    Abstract: No abstract text available
    Text: July 1996 N NDS8426 Single N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially tailored


    OCR Scan     		NDS8426 NDS8426 193tQ PDF

    Untitled

    Abstract: No abstract text available
    Text: h 7 > y X $ / T ransistors 2SD 1765 2SD1765 I fcf £ V NPN F> h 7 > V X ^ Freq. Power Amp. Epitaxial Planar NPN Silicon Darlington Transistor • — r liill/D im e n s io n s U n it: mm 1) V y n - z m - KrtBEo 2) ' K - ' X • 1 5 v SfSjlcJStStrtjKo 3) 7 < > H - A K 7 S o T l ' 5 / c


    OCR Scan     		2SD1765 PDF

    2SD1960

    Abstract: 2sd1960 transistor 2SD1765 2SD2398 100V 2A MPT3 2SB1287 2SB1316 2SB1567 2SB1580 2SD1867
    Text: 2SB1580 / 2SB1316 / 2SB1567 / 2SB12B7 2SD2195 / 2SD1960 / 2SD1867 / 2SD2398 / 2SD1765 Transistors I Power Transistor —100V, —2A 2SB1580 / 2SB1316 / 2SB1567 / 2SB1287 •F e a tu re s •A b s o lu te maximum ratings (Ta=25'C ) 1 ) Darlington connection for high DC current gain.


    OCR Scan     		2SB1580 2SB1316 2SB1567 2SB12B7 2SD2195 2SD1960 2SD1867 2SD2398 2SD1765 2sd1960 transistor 2SD1765 100V 2A MPT3 2SB1287 PDF

    CEF09N7G

    Abstract: cef09n7 CEP09N7 CEB09 ceb09n7g
    Text: CEP09N7G/CEB09N7G CEF09N7G N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES VDSS RDS ON CEP09N7G Type 700V 1Ω 9A ID @VGS 10V CEB09N7G 700V 1Ω 9A 10V CEF09N7G 700V 1Ω 9A d 10V D Super high dense cell design for extremely low RDS(ON).


    Original     		CEP09N7G/CEB09N7G CEF09N7G CEP09N7G CEB09N7G O-263 O-220 O-220F O-220/263 CEF09N7G cef09n7 CEP09N7 CEB09 ceb09n7g PDF

    3904

    Abstract: tr 3904 TR 3906 PNP SM Transistor 3904 transistor marking s1a 3904 SOT23 BT3904 sot23 3904 4007S S1A SOT23
    Text: SIEM EN S NPN Silicon Switching Transistor • High DC current gain: 0.1 mA to 100 mA • Low collector-em itter saturation voltage SMBT 3904 • Com plem entary type: SM BT 3906 PNP Type Marking Ordering Code (tape and reel) PinCContigui ation 1 3 2 Package1*


    OCR Scan     		68000-A4416 OT-23 EHP0Q935 EHP00757 3904 tr 3904 TR 3906 PNP SM Transistor 3904 transistor marking s1a 3904 SOT23 BT3904 sot23 3904 4007S S1A SOT23 PDF

    RC723DP

    Abstract: SN72748L MC7805G LM340H-05 SG3525 equivalent transistor KT 209 M 78M15HM SN52107L SG711 SG7812CK
    Text: VOLTAGE REGULATORS OPERATIONAL AMPLIFIERS 2 INTERFACE CIRCUITS 3 TRANSISTOR ARRAYS OTHER CIRCUITS APPLICATIONS NOTES 5 d u c t S e le c to r G uide INTER FA C E C IR C U ITS Regulating Pulse Width Modulators 13 13 16 21 24 44 1524/2524/3524 1525/2525/3525


    OCR Scan     		/2525A /3525A /2527A /3527A 523/3523A RC723DP SN72748L MC7805G LM340H-05 SG3525 equivalent transistor KT 209 M 78M15HM SN52107L SG711 SG7812CK PDF

    Untitled

    Abstract: No abstract text available
    Text: September 1997 F A I R C H I L D SEM ICONDUCTO R tm NDS8426 Single N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect • 9.9 A, 20 V. Rds^n, = 0.015 & @ VGS= 4.5 V. transistors are produced using Fairchild's proprietary, high cell


    OCR Scan     		NDS8426 NDSS426 PDF

    IPLU300N04S4-R7

    Abstract: 4N04R7
    Text: IPLU300N04S4-R7 OptiMOS -T2 Power-Transistor Product Summary VDS 40 V RDS on 0.76 mW ID 300 A Features • N-channel - Enhancement mode H-PSOF-8-1 Tab • AEC qualified • MSL1 up to 260°C peak reflow 8 1 • 175°C operating temperature Tab • Green product (RoHS compliant); 100% lead free


    Original     		IPLU300N04S4-R7 4N04R7 IPLU300N04S4-R7 4N04R7 PDF

    Untitled

    Abstract: No abstract text available
    Text: IPLU300N04S4-R8 OptiMOS -T2 Power-Transistor Product Summary VDS 40 V RDS on 0.77 mW ID 300 A Features H-PSOF-8-1 • N-channel - Enhancement mode Tab • AEC qualified 8 • MSL1 up to 260°C peak reflow 1 • 175°C operating temperature • Green product (RoHS compliant); 100% lead free


    Original     		IPLU300N04S4-R8 4N04R8 PDF

    LD 1106 BS

    Abstract: NDS8426
    Text: National Semiconductor July 1996 ” NDS8426 Single N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel e nhancem ent m od e p o w e r field effect tran sisto rs are produced using N ational's p ro p rie ta ry, h ig h cell density, DMOS tech no lo g y.


    OCR Scan     		NDS8426 RDS10N, bSG1130 LD 1106 BS NDS8426 PDF

    2SA911

    Abstract: 2sc1751 2SA861 2SA1033 138D 2N6426 MPSA43 MP6A42 2sa872 transistor
    Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


    OCR Scan     		rbb-40 2SA872 Tc-25 2SA911 2sc1751 2SA861 2SA1033 138D 2N6426 MPSA43 MP6A42 2sa872 transistor PDF

    NDS8426

    Abstract: No abstract text available
    Text: July 1 9 9 6 N N D S8426 Single N-Channel Enhancement M ode Field Effect Transistor G eneral D escription Features T h ese N -C h an n el en h a n ce m e n t m o d e p o w er field effect transistors are p rod u ced u sin g N ational's proprietary, high cell d en sity, DMOS tech n o lo g y .


    OCR Scan     		NDS8426 extremely25^ NDS8426 0D33347 PDF

    transistor 2SB 1567

    Abstract: 2sd 316
    Text: 2S B 1 5 8 0 / 2 S B 1 316 / 2 S B 1 5 6 7 / 2 S B 1 287 Transistors 2 S D 2 1 95 / 2S D 1 9 8 0 / 2 S D 1 8 6 7 / 2S D 2 3 9 8 / 2 S D 1 765 Power Transistor —100V, — 2A 2SB1580 / 2SB1316 / 2SB1567 / 2SB1287 1) 2) 3) 4) •A b s o lu te maximum ratings (Ta=25"C)


    OCR Scan     		2SB1580 2SB1316 2SB1567 2SB1287 2195/2S 1980/2SD 2398/2SD 2SB1580 0Dlb713 O-220FN transistor 2SB 1567 2sd 316 PDF

    HC2000H

    Abstract: RCA HC2000H RCA-HC2000H AN-4483 HC2000 2000 PWM hybrid AN4483 SOLID STATE AUDIO AMPLIFIERS RCA Solid State Power Transistor RCA Solid State amplifier
    Text: G E SO LI D 3875081 ST AT E Dl D E I 3Ö7S0Ö1 G E S O L I D ST AT E Pow er Hybrid C irc u its _ ' .HC2000H DG17t.SE 3 01E 17652 D ~7^7?-JF3 File Number 566 Multi-Purpose 7-Ampere . Operational Amplifier Linear Amplifiers for Applications in Industrial


    OCR Scan     		0017t HC2000H RCA-HC2000H HC2000H 92CS-I99Ã RCA HC2000H AN-4483 HC2000 2000 PWM hybrid AN4483 SOLID STATE AUDIO AMPLIFIERS RCA Solid State Power Transistor RCA Solid State amplifier PDF

    alternator diode 1776 B

    Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
    Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)


    Original     		Hig86-755-3679515 alternator diode 1776 B 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent PDF