TRANSISTOR 1557 B Search Results

TRANSISTOR 1557 B Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR 1557 B Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
1557 b transistor Abstract: transistor IC 1557 b 1557 transistor transistor 1557 b transistor 1557 TRANSISTOR 2SC 2SC1557 C4053 uhf transistor amplifier K8J5 Text: S /U D :/N P N l£ 9 * 5 /? J I/7 b -* fê h 5 > 5 tt9 SILICON NPN EPITAXIAL PLANAR TRANSISTOR 2SC , 1557 i f i i i f f l o -f » b ttxib nmmm INDUSTRIAL APPLICATIONS o VHP , UHF o M icrowave H igh Power A m p lifie r A p p lic a tio n s o VHF, UHF Band CATV A p p l i c a t io n s	OCR Scan	30MHz 2SC1557 1557 b transistor transistor IC 1557 b 1557 transistor transistor 1557 b transistor 1557 TRANSISTOR 2SC C4053 uhf transistor amplifier K8J5	PDF
r58 ah16 Abstract: ISL62883HRZ ISL62883C fairchild sot23 v31 Burndy y35 r39 ah16 TP35 1557 b transistor rPGA-989 ISL6208 Text: Application Note 1557 Author: Jia Wei ISL62883CEVAL2Z User Guide Introduction Interface Connections The ISL62883CEVAL2Z evaluation board demonstrates the performance of the ISL62883 multiphase synchronous-buck PWM VCORE controller implementing Intel IMVP-6.5 protocol. The ISL62883 features Intersil's	Original	ISL62883CEVAL2Z ISL62883 AN1557 r58 ah16 ISL62883HRZ ISL62883C fairchild sot23 v31 Burndy y35 r39 ah16 TP35 1557 b transistor rPGA-989 ISL6208	PDF
transistor D 1557 Abstract: 1557 b transistor F88 diode transistor IC 1557 B transistor 1557 b AF280 Germanium power Text: 5SC » • fi235bOS GG04QÔ1 S H S I E â PNP Germanium UHF Transistor - SIEMENS À F 280 S AKTIENGESELLSCHAF “ fo r m ixe r and o sc illa to r c irc u its up to 9 0 0 M H z - 7^ 3/-07 AF 2 8 0 S is a germanium PNP UHF planar transistor with passivated surface in lowcapacitance 50 B 3 DIN 41867 plastic package similar to T 0 119. This transistor Is particularly	OCR Scan	fi235bOS GG04Q 2701-F88 transistor D 1557 1557 b transistor F88 diode transistor IC 1557 B transistor 1557 b AF280 Germanium power	PDF
transistor d 1557 Abstract: No abstract text available Text: ^53^31 DDSSblc! bfiS H A P X N AUER PHILIPS/D ISCR ETE BSS83 b?E D J V MOSFET N-CHANNEL ENHANCEMENT SWITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor o f the N-channel enhancement mode type. The transistor is sealed in a SOT143 envelope and features a low ON resistance and low capacitances.	OCR Scan	BSS83 OT143 transistor d 1557	PDF
Untitled Abstract: No abstract text available Text: ELANTEC la n te c HIGH PERFORMANCE ANAUQGINTEGSMÊO CIRCUITS D • 312TSS7 Dual Fast Single-Supply Decompensated Op Amp 0000054 E ■ "7- "7 T ~ /Q ' F eatu res G eneral D escrip tion • Inputs and outputs operate at negative supply rail • Gain bandw idth	OCR Scan	312TSS7 MIL-STD-883 EL2243	PDF
2SC1541 Abstract: transistor 1548 b 4500cm Text: - 5 - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English	OCR Scan	re-25 700mhz, 2sa795 Tc-25 2sa794 2sa900 V156S 100hz, 250pS 2SC1541 transistor 1548 b 4500cm	PDF
Untitled Abstract: No abstract text available Text: NSL12TT1 High Current Surface Mount PNP Silicon Low VCE sat Transistor for Battery Operated Applications http://onsemi.com 12 VOLTS 1.0 AMPS PNP TRANSISTOR MAXIMUM RATINGS (TA = 25°C) Symbol Max Unit Collector-Emitter Voltage VCEO −12 Vdc Collector-Base Voltage	Original	NSL12TT1	PDF
MRF245 Abstract: SD1076 CM45-12A BLY22 sd1238 BLX66 MM1669 PT8828 BLY94 PT9780 Text: 450 .512 MHz class C for mobile applications ii com m unications m obiles UHF, classe C TYPE PACKAGE CONFIG. THOMSON-CSF P ou t Vcc Pin min Wl (V (MHz) (W) Gp min (dB) T O -46 (CB-4011 SD 1132-4 SD 1115-2 SD 1482 XO-72 SL TO-117 SL .280 4L STUD (B) CE	OCR Scan	XO-72 O-117 02N6082 BM80-12 SD1416 MM1601 MRF631 MRF245 SD1076 CM45-12A BLY22 sd1238 BLX66 MM1669 PT8828 BLY94 PT9780	PDF
SD1076 Abstract: MRF245 2n918 PT8811 BLY94 pt8710 PT9788 PT9780 SD1238 MRF510 Text: 2 - 30 MHz linear SSB applications applications linéaires BLU TYPE PACKAGE CONFIG. THOMSON-CSF V CC V Pout (PEP) Pin fo (W) (W) (MHz) Gp min (dB) IMD max (dB) 4LFL 4LFL 4LFL 4LFL CE CE CE CE 12,5 12,5 12,5 12,5 > > > > 20 50 75 100 30 30 30 30 0,63 1,6	OCR Scan	BAM20 2N5642 B25-12 2N60822N6082 BM80-12 SD1416 MM1601 MRF631 SD1144 PT8549 SD1076 MRF245 2n918 PT8811 BLY94 pt8710 PT9788 PT9780 SD1238 MRF510	PDF
smd transistor 6c Abstract: No abstract text available Text: SflE D 312^357 □ □ □ 2 5 tiö TTT B E L A EN2016 â b fltK EN2016 F asi QuadNPN A rray äm äB äw äsR M B . 'M3-ZS ELANTEC INC F eatu res G eneral D escrip tion • • • • • T he EN2016 fam ily are quad m onolithic vertical N P N tran sis	OCR Scan	EN2016 2N3904 TPQ3904 MPQ3904 EN2016 em2016 120mA smd transistor 6c	PDF
PT8740 Abstract: PT8811 replace for 2N918 PT9780 mrf245 THOMSON-CSF PRODUCTS transistor pt4544 PT9788 PT8710 PT8828 Text: 4 0. 900 MHz class A linear for CATV/MATV applications f\ TYPE POLARITY classe A linéaire pour amplificateurs d'antenne PACKAGE @ V BR CEO min. (V) (M Hz) le Im A) C l2e C22b* (pF) l\IF @ (dB) BFX 89 BFY90 BFR 99 BFR 38 N N P P TO-72 TO-72 TO-72 TO-72	OCR Scan	T8710 SD1238 2N5126 2N918 2N5642 BM100-28 MM1603 MRF633 SD1145 PT8717 PT8740 PT8811 replace for 2N918 PT9780 mrf245 THOMSON-CSF PRODUCTS transistor pt4544 PT9788 PT8710 PT8828	PDF
Untitled Abstract: No abstract text available Text: EL2160C F eatu res G eneral D escrip tion • 130 M Hz 3 dB bandwidth Ay = + 2 • 180 M Hz 3 dB bandwidth (AV = + 1 ) • 0.01% differential gain, R l = 500ft • 0.01° differential phase, R l = 500ft • Low supply current, 8.5 mA • Wide supply range, ± 2V to ± 15V	OCR Scan	EL2160C 500ft EL2160C 43juH 285pF	PDF
MRF245 Abstract: CM45-12A BFS51 SD1451 J03055 2N6197 BLY22 SD1076 PT8740 PT8811 Text: 130. 175 MHz class C for FM mobile applications p\ com m unications m obiles FM, classe C TYPE PACKAGE CONFIG. V cc V .280 4LSL (B) XO-72 SL TO-117 SL .280 4LSL (B) .280 4LSL (B) CE CE CE CE CE 7,5 7,5 7,5 7,5 7,5 2N 4427 SD 1484-10 SD 1127 2N 6080 SD 1574	OCR Scan	XO-72 O-117 2N6082 BM80-12 SD1416 MM1601 MRF631 MRF245 CM45-12A BFS51 SD1451 J03055 2N6197 BLY22 SD1076 PT8740 PT8811	PDF
Untitled Abstract: No abstract text available Text: la n t e c HiGH PERFORMANCE ANALOG INTEGRATED CIRCUITS EL2243C é EL2243C Dual Fast Single-Supply Decompensated Op Amp F e a tu r e s G e n e ra l D e s c rip tio n • Inputs and outputs operate at negative supply rail • Gain bandwidth product—70 MHz	OCR Scan	EL2243C MIL-STD-883 EL2243 175Meg rpa41 312R557 QQQ3077	PDF

2N918 Abstract: SD1076 PT8811 MRF245 RF Transistor S10-12 PT8828 PT8710 sd-1076 PT9780 transistor pt4544 Text: 130. 175 MHz class C for FM mobile applications p\ communications mobiles FM, classe C TYPE PACKAGE CONFIG. V cc V .280 4LSL (B) XO-72 SL TO-117 SL .280 4LSL (B) .280 4LSL (B) CE CE CE CE CE 7,5 7,5 7,5 7,5 7,5 2N 4427 SD 1484-10 SD 1127 2N 6080 SD 1574	OCR Scan	BAM20 22N6082 BM80-12 SD1416 MM1601 MRF631 SD1144 PT8549 SD1214 N5054 2N918 SD1076 PT8811 MRF245 RF Transistor S10-12 PT8828 PT8710 sd-1076 PT9780 transistor pt4544	PDF
04ti Abstract: No abstract text available Text: EL2260C/EL2460C to r D ual 'Quad/'JO M fh t'urrrnt f'rtd b a ck 1m plifivrs HIGHPERFORMSNCEANAIOS INTEGRATEDCfflCUrTS F e a tu r e s G en era l D e sc r ip tio n • 130 MHz 3 dB bandwidth Av = + 2 • 180 M Hz 3 dB bandwidth (Av = + 1 ) • 0.01% differential gain,	OCR Scan	EL2260C/EL2460C 500ft EL2260C/EL2460C 04ti	PDF
Untitled Abstract: No abstract text available Text: la n t e c NIGH PERFORMANCE ANAUOG INTEGRATED CIRCUITS EL2002C Low Power, 180 MHz Buffer Am plifier F e a tu r e s G e n e ra l D e s c rip tio n • • • • • • • • • • The EL2002 is a low cost monolithic, high slew rate, buffer amplifier. B uilt using the Elantec monolithic Complementary	OCR Scan	EL2002C EL2002 M2002 00G31L0	PDF
Untitled Abstract: No abstract text available Text: EL2012 5 AE D é ia n ie t H B H PERFORMANCE ANAUQG INTEGRATED CtRCtttTS Features • 80 MHz bandwidth with 50fl load • 250 mA output current • Gain = 0.999 + with 500 load • V 0s ± 4m V • Short circuit protected • Power package with isolated metal tab	OCR Scan	EL2012 EL2012CT O-220 MDP0028 T0-220 0D02Mfl0 EL2012 M2012	PDF
Untitled Abstract: No abstract text available Text: EL2001C elantec high EL2001C Low Power, 70 MHz Buffer A mplifier F eatu res G eneral D escrip tion • • • • • • • • • • The EL2001 is a low cost monolithic, high slew rate, buffer amplifier. B uilt using the Elantec monolithic Complementary	OCR Scan	EL2001C EL2001 EL2001C M2001 DDD31SG	PDF
Gan on silicon transistor Abstract: No abstract text available Text: GAN-ON-SI FAILURE MECHANISMS AND RELIABILITY IMPROVEMENTS S. Singhal, J.C. Roberts, P. Rajagopal, T. Li, A.W. Hanson, R. Therrien, J.W. Johnson, I.C. Kizilyalli, K.J. Linthicum Nitronex Corporation 628 Hutton Street, Suite 106, Raleigh, NC, 27606 phone: 919-807-9100; fax: 919-807-9200; e-mail: ssinghal@nitronex.com	Original		PDF
BC237 Abstract: BC847BPDW1T1 Series BC548 low noise transistors bc638 cbc550c BC307 2N5550* surface mount BC212 BSR58LT1 NSDEMN11XV6T1 Text: Numeric Data Sheet Listing Data Sheet Function Page 1SS383T1 Dual Schottky Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51 2N3819 JFET VHF/UHF Amplifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53	Original	1SS383T1 2N3819 2N3903, 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088, 2N5089 BC237 BC847BPDW1T1 Series BC548 low noise transistors bc638 cbc550c BC307 2N5550* surface mount BC212 BSR58LT1 NSDEMN11XV6T1	PDF
20-PIN Abstract: LR36685 RJ21P3AA0PT Q455 SMR 56-7 Text: BACK RJ21P3AA0PT 1/1.8-type Interline Color CCD Area Sensor with 3 370 k Pixels RJ21P3AA0PT • Package : 20-pin half-pitch DIP [Plastic] P-DIP020-0500 Row space : 12.20 mm DESCRIPTION The RJ21P3AA0PT is a 1/1.8-type (8.93 mm) solidstate image sensor that consists of PN photodiodes and CCDs (charge-coupled devices). With	Original	RJ21P3AA0PT 20-pin P-DIP020-0500) RJ21P3AA0PT LR36685 Q455 SMR 56-7	PDF
9033 transistor Abstract: PT8828 2N4932 PT8740 BLW27 BLX66 sd1315 BLY94 MM1669 PT8811 Text: 0.75. 4.2 GHz microwave transistors for class C operation O transistors hyperfréquences, classe C TYPE TH 1002 TH 1005 TH 1010 TH 2001 TH 2003 TH 2005 TH 2302 TH 2304 TH 2307 TH 3000 TH 3001 TH 3003 TH 3005 TH 4200 TH 4201 2 IM 4428 2N 4429 2N 4430 2N 4431	OCR Scan	302N6082 BM80-12 SD1416 MM1601 MRF631 SD1144 PT8549 SD1214 N5054 2N3553 9033 transistor PT8828 2N4932 PT8740 BLW27 BLX66 sd1315 BLY94 MM1669 PT8811	PDF
Untitled Abstract: No abstract text available Text: HIGH PERFORMANCE ANALOG INTEGRATED CIRCUITS EL2001C Low Power, 70 MHz Buffer Amplifier Features General Description • 1.3 mA supply current • 7 0 M Hz bandw idth • 2000 V/f-ts slew rate • Low bias current, 1 jiA typical •1 0 0 mA output current • Short circuit protected	OCR Scan	EL2001C EL2001 QQ0431b	PDF

TRANSISTOR 1557 B Search Results

TRANSISTOR 1557 B Result Highlights (5)

TRANSISTOR 1557 B Datasheets Context Search

1557 b transistor

r58 ah16

transistor D 1557

transistor d 1557

Untitled

2SC1541

Untitled

MRF245

SD1076

smd transistor 6c

PT8740

Untitled

MRF245

Untitled

2N918

04ti

Untitled

Untitled

Untitled

Gan on silicon transistor

BC237

20-PIN

9033 transistor

Untitled