1417 transistor
Abstract: max 1417 1417-6A
Text: 1417-6A 6 Watts, 28 Volts, Class C Microwave 1400 - 1700 MHz GENERAL DESCRIPTION The 1417-6A is an internally matched, COMMON BASE transistor capable of providing 6 watts of CW RF Output power across the 1400-1700 MHz band. This transistor is specifically designed for telemetry and telecommunications
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417-6A
417-6A
1417 transistor
max 1417
1417-6A
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1417 transistor
Abstract: transistor 1417 microwave amplifier 2.4 ghz 10 watts c 1417 1417-12A 2.4 ghZ rf transistor amplifier TRANSISTOR 12 GHZ RF TRANSISTOR 1 WATT POWER TRANSISTOR 1 WATT 2.4 GHZ 1417 ic
Text: 1417 - 12A 12 Watt - 28 Volts, Class C Microwave 1400 - 1700 MHz GENERAL DESCRIPTION CASE OUTLINE The 1417-12A is a COMMON BASE transistor capable of providing 12 Watts of Class C, RF output power over the band 1400-1700 MHz. This transistor is designed for Microwave Broadband Class C amplifier
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417-12A
1417 transistor
transistor 1417
microwave amplifier 2.4 ghz 10 watts
c 1417
1417-12A
2.4 ghZ rf transistor
amplifier TRANSISTOR 12 GHZ
RF TRANSISTOR 1 WATT
POWER TRANSISTOR 1 WATT 2.4 GHZ
1417 ic
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Untitled
Abstract: No abstract text available
Text: 1417 Vishay Foil Resistors Bulk Metal Foil Technology 8 Pin Transistor Outline Hermetic Resistor Network The eight pin TO-5 package with 0.230" pin circle is an alternative layout to Model 1413. This network can contain up to 12, V5X5 resistor chips. Review datasheet "7 Technical Reasons to Specify Bulk
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27-Apr-2011
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1417 transistor
Abstract: R631 transistor 1417 81R1
Text: 1417 Vishay Foil Resistors Bulk Metal Foil Technology 8 Pin Transistor Outline Hermetic Resistor Network The eight pin TO-5 package with 0.230" pin circle is an alternative layout to Model 1413. This network can contain up to 12, V5X5 resistor chips. Review data sheet “7 Technical Reasons to Specify Bulk Metal®
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07-Mar-05
1417 transistor
R631
transistor 1417
81R1
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1417 transistor
Abstract: No abstract text available
Text: 1417 Vishay Foil Resistors Bulk Metal Foil Technology 8 Pin Transistor Outline Hermetic Resistor Network The eight pin TO-5 package with 0.230" pin circle is an alternative layout to Model 1413. This network can contain up to 12, V5X5 resistor chips. Review data sheet “7 Technical Reasons to Specify Bulk Metal®
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31-Jul-02
1417 transistor
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Untitled
Abstract: No abstract text available
Text: 1417 Vishay Foil Resistors Bulk Metal Foil Technology 8 Pin Transistor Outline Hermetic Resistor Network The eight pin TO-5 package with 0.230" pin circle is an alternative layout to Model 1413. This network can contain up to 12, V5X5 resistor chips. Review data sheet “7 Technical Reasons to Specify BMF Resistor Networks.”
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08-May-01
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1417 transistor
Abstract: transistor 1417 vishay RESISTOR NETWORK
Text: 1417 Vishay Foil Resistors Bulk Metal Foil Technology 8 Pin Transistor Outline Hermetic Resistor Network The eight pin TO-5 package with 0.230" pin circle is an alternative layout to Model 1413. This network can contain up to 12, V5X5 resistor chips. Review data sheet “7 Technical Reasons to Specify Bulk Metal®
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18-Jul-08
1417 transistor
transistor 1417
vishay RESISTOR NETWORK
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Untitled
Abstract: No abstract text available
Text: 1417 Vishay Foil Resistors Bulk Metal Foil Technology 8 Pin Transistor Outline Hermetic Resistor Network The eight pin TO-5 package with 0.230" pin circle is an alternative layout to Model 1413. This network can contain up to 12, V5X5 resistor chips. Review data sheet “7 Technical Reasons to Specify Bulk Metal®
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08-Apr-05
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 3DD13001 TRANSISTOR NPN 1. BASE 2. COLLECTOR FEATURES z Power switching applications 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter
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3DD13001
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13001 TRANSISTOR NPN TO-92 FEATURES z Power switching applications 1. BASE 2. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 3. EMITTER Symbol Parameter
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3DD13001
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 3DD13001 TRANSISTOR NPN 1. BASE 2. COLLECTOR FEATURES z Power switching applications 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter
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3DD13001
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phoenix contact MCR R I 4v
Abstract: transistor MCR 400
Text: MCR-S-.-DCI Current transducers up to 50 A programmable and configurable 1. Short description • progressive adjustment of measuring range • true r.m.s. value measurement • electrical 3-way isolation in acc. with EN 61010 • with optional relay and transistor output
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MCR-S-10/50-UI-D.
13von13
phoenix contact MCR R I 4v
transistor MCR 400
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196D226
Abstract: siemens frg 768T188-3C8 AWG34 C5131 wima 220 CAPACITOR 55120 mpp schematic AN713 Si9100
Text: AN713 A 1-Watt Flyback Converter Using the Si9100 James Blanc The Si9100 is a monolithic BiC/DMOS SMARTPOWER IC which combines high-efficiency CMOS logic, a high-voltage switching transistor and high-voltage pre-regulator on a single die. It is the first low-cost, high
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AN713
Si9100
Si9100
Si9100.
TE1409
196D107X9010P
196D226X9010J
1N4148
1N5819,
196D226
siemens frg
768T188-3C8
AWG34
C5131
wima 220 CAPACITOR
55120
mpp schematic
AN713
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Untitled
Abstract: No abstract text available
Text: ObE D N AMER PHILIPS/DISCRETE 8 6 0 1 1 9 3 6 D • bb53T31 0014174 4 ■ r - BLY91A I V i. V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a nominal supply voltage of 28 V . The transistor is resistance stabilized and
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bb53T31
BLY91A
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Transistor D 799
Abstract: transistor BD 522 transistor motorola 114-8 bd799 TRANSISTOR bd 147 B0801 motorola s 114-8 transistor BD 800 Transistor K 799 1961 30 TRANSISTOR
Text: MOTOROLA sc XSTRS/R F 1SE D I fe,3b?aS4 0 D Ö4 75 7 G | MOTOROLA BD795 BD797 SEMICONDUCTOR TECHNICAL DATA BD799 BD801 PLASTIC HIGH POWER SILICON NPN TRANSISTOR 8 AMPERE POWER TRANSISTOR . . . designed for use up to 3 0 W att audio amplifiers utilizing complementary or quasi complementary circuits.
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BD795
BD797
BD799
BD801
BD797
B0801
BD796
BD801
Transistor D 799
transistor BD 522
transistor motorola 114-8
TRANSISTOR bd 147
motorola s 114-8
transistor BD 800
Transistor K 799
1961 30 TRANSISTOR
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Transistor 2SA 2SB 2SC 2SD
Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
Text: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)
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O-126
O-126
T0-220AB,
O-220
2SC4544
2SC4448
2SC3612
2BC4201
Transistor 2SA 2SB 2SC 2SD
S-AU27M
S2000A inverter
P4005
S-AV21H
S-AU27
3182N
2sb 834 transistor
Transistor 2SC4288A
Drive IC 2SC3346
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ms 7254 ver 1.1
Abstract: ms 7254 ver 3.0 T557
Text: MOTOR O L A SC I 12E D I L3b75S4 QOflSMll 2 XSTRS/R F I 7 " -3 3 7 3 MOTOROLA SEMICONDUCTOR MJE13070 TECHNICAL DATA D e s i g n e r ’s D a t a S h e e t 5 AMPERE NPN SILICON POWER TRANSISTOR SWITCHMODE II SERIES NPN SILICON POWER TRANSISTOR 400 VOLTS 80 WATTS
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L3b75S4
MJE13070
MJE13070
ms 7254 ver 1.1
ms 7254 ver 3.0
T557
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Untitled
Abstract: No abstract text available
Text: PRECISION METAL BULK FOIL TECHNOLOGY • a company V I S H A of Y VISHAY VISH AY MODEL 1417 RESISTORS 12 Pin Transistor Outline Hermetic Resistor Network The eight pin TO-5 package with 0.230" pin circle is an alternative layout to Model 1413. Review the 7 technical reasons why you should specify Vishay Bulk
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Untitled
Abstract: No abstract text available
Text: TOSHIBA RN1414-RN1418 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1414, RN1415, RN1416, RN1417, RN1418 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. • With Built-in Bias Resistors • Simplify Circuit Design
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RN1414-RN1418
RN1414,
RN1415,
RN1416,
RN1417,
RN1418
2414-R
RN1414
RN1415
RN1416
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transistor BT 139 F applications note
Abstract: 12W 60 chip transistor TIC 122 Transistor BLT71 transistor BR 471 A Transistor A 471 TRANSISTOR S 813 FC 0137 9746 transistor 1199
Text: Philips Semiconductors Product specification UHF power transistor BLT71 FEATURES • Very high efficiency • Low supply voltage. APPLICATIONS • Hand-held radio equipment in common emitter class-AB operation in the 900 MHz communications band. DESCRIPTION
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BLT71
OT223
OT223
711002b
MSA035-
OT223.
711002t
transistor BT 139 F applications note
12W 60 chip transistor
TIC 122 Transistor
BLT71
transistor BR 471 A
Transistor A 471
TRANSISTOR S 813
FC 0137
9746
transistor 1199
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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CB-F36c
2SD1642
2SD2182,
2SC4489,
-08S-
ksd 302 250v, 10a
irf 5630
transistor 2SB 367
IRF 3055
AC153Y
transistor ESM 2878
TIP 43c transistor
2sk116
bf199
bd643
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A5 GNE mosfet
Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA
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1PHX11136Q-14
A5 GNE mosfet
jo3501
2N4427 equivalent bfr91
2N503
2N5160 MOTOROLA
BF431
BFR96
HY 1906 transistor
jo2015
kd 2060 transistor
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BFR194
Abstract: No abstract text available
Text: SIEMENS BFR 194 PNP Silicon RF Transistor • For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20mA to 80mA • Complementary type: BFR 106 NPN ESP: Electrostatic discharge sensitive device, observe handling precaution!
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Q62702-F1346
OT-23
15toimax
BFR194
900MHz
BFR194
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