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    TRANSISTOR 1345 Search Results

    TRANSISTOR 1345 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 1345 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PBLS4005V

    Abstract: PBLS4005Y marking S5 sot363 marking K5 sot363
    Text: PBLS4005Y; PBLS4005V 40 V PNP BISS loadswitch Rev. 02 — 13 July 2005 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal BISS transistor and NPN ResistorEquipped Transistor (RET) in one package. Table 1:


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    PDF PBLS4005Y; PBLS4005V PBLS4005Y OT363 SC-88 OT666 PBLS4005V PBLS4005Y marking S5 sot363 marking K5 sot363

    PBLS4004Y

    Abstract: PBLS4004V sot363 marking K4
    Text: PBLS4004Y; PBLS4004V 40 V PNP BISS loadswitch Rev. 02 — 11 July 2005 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal BISS transistor and NPN ResistorEquipped Transistor (RET) in one package. Table 1:


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    PDF PBLS4004Y; PBLS4004V PBLS4004Y OT363 SC-88 OT666 PBLS4004Y PBLS4004V sot363 marking K4

    PBLS4003V

    Abstract: PBLS4003Y
    Text: PBLS4003Y; PBLS4003V 40 V PNP BISS loadswitch Rev. 02 — 14 July 2005 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal BISS transistor and NPN ResistorEquipped Transistor (RET) in one package. Table 1:


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    PDF PBLS4003Y; PBLS4003V PBLS4003Y OT363 SC-88 OT666 PBLS4003V PBLS4003Y

    PBLS4001V

    Abstract: PBLS4001Y 13454
    Text: PBLS4001Y; PBLS4001V 40 V PNP BISS loadswitch Rev. 01 — 8 November 2004 Product data sheet 1. Product profile 1.1 General description Low VCEsat PNP transistor and NPN resistor-equipped transistor in one package. Table 1: Product overview Type number Package


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    PDF PBLS4001Y; PBLS4001V PBLS4001Y OT363 SC-88 OT666 PBLS4001V PBLS4001Y 13454

    PBLS4003V

    Abstract: Philips date CODE MARKING PBLS4003Y
    Text: PBLS4003Y; PBLS4003V 40 V PNP BISS loadswitch Rev. 01.00 — 6 December 2004 Product data sheet 1. Product profile 1.1 General description Low VCEsat PNP transistor and NPN resistor-equipped transistor in one package. Table 1: Product overview Type number


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    PDF PBLS4003Y; PBLS4003V PBLS4003Y OT363 SC-88 OT666 PBLS4003V Philips date CODE MARKING PBLS4003Y

    PBLS4004Y

    Abstract: PBLS4004V sot363 marking K4
    Text: PBLS4004Y; PBLS4004V 40 V PNP BISS loadswitch Rev. 01 — 13 December 2004 Product data sheet 1. Product profile 1.1 General description Low VCEsat PNP transistor and NPN resistor-equipped transistor in one package. Table 1: Product overview Type number Package


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    PDF PBLS4004Y; PBLS4004V PBLS4004Y OT363 SC-88 OT666 PBLS4004Y PBLS4004V sot363 marking K4

    PBLS4001V

    Abstract: PBLS4001Y
    Text: PBLS4001Y; PBLS4001V 40 V PNP BISS loadswitch Rev. 02 — 25 April 2005 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough in Small Signal BISS transistor and NPN ResistorEquipped Transistor (RET) in one package. Table 1:


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    PDF PBLS4001Y; PBLS4001V PBLS4001Y OT363 SC-88 OT666 PBLS4001V PBLS4001Y

    PBLS4002Y

    Abstract: PBLS4002V
    Text: PBLS4002Y; PBLS4002V 40 V PNP BISS loadswitch Rev. 01 — 6 December 2004 Product data sheet 1. Product profile 1.1 General description Low VCEsat PNP transistor and NPN resistor-equipped transistor in one package. Table 1: Product overview Type number Package


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    PDF PBLS4002Y; PBLS4002V PBLS4002Y OT363 SC-88 OT666 PBLS4002Y PBLS4002V

    PBLS4002Y

    Abstract: PBLS4002V
    Text: PBLS4002Y; PBLS4002V 40 V PNP BISS loadswitch Rev. 02 — 19 July 2005 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal BISS transistor and NPN ResistorEquipped Transistor (RET) in one package. Table 1:


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    PDF PBLS4002Y; PBLS4002V PBLS4002Y OT363 SC-88 OT666 PBLS4002Y PBLS4002V

    PBLS4005V

    Abstract: PBLS4005Y
    Text: PBLS4005Y; PBLS4005V 40 V PNP BISS loadswitch Rev. 01 — 6 December 2004 Product data sheet 1. Product profile 1.1 General description Low VCEsat PNP transistor and NPN resistor-equipped transistor in one package. Table 1: Product overview Type number Package


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    PDF PBLS4005Y; PBLS4005V PBLS4005Y OT363 SC-88 OT666 PBLS4005V PBLS4005Y

    2SC 8550

    Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
    Text: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4


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    PDF 3SK309 3SK317 3SK318 BB101C BB102C BB301C BB302C BB304C BB305C BB501C 2SC 8550 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545

    CA3246M

    Abstract: CA3246 CA3246M96 850e 610E CA3227 CA3227E CA3227M CA3227M96 SPICE 2G6
    Text: CA3227, CA3246 Data Sheet High-Frequency NPN Transistor Arrays For Low-Power Applications at Frequencies Up to 1.5GHz September 1998 File Number 1345.4 Features • Gain-Bandwidth Product fT . . . . . . . . . . . . . . . . . >3GHz • Five Transistors on a Common Substrate


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    PDF CA3227, CA3246 CA3227 CA3246 CA3246M CA3246M96 850e 610E CA3227E CA3227M CA3227M96 SPICE 2G6

    Semiconductor 1346 transistor

    Abstract: No abstract text available
    Text: ON Semiconductort MPSW92 One Watt High Voltage Transistor ON Semiconductor Preferred Device PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −300 Vdc Collector −Base Voltage VCBO −300 Vdc Emitter −Base Voltage


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    PDF MPSW92 O-226AE) Semiconductor 1346 transistor

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


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    RCA H 541

    Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
    Text: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK


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    Untitled

    Abstract: No abstract text available
    Text: DATA SH EE T MOS FIELD EFFECT TRANSISTOR _¿ ¿ P A 1 8 5 5 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The ,uPA1855 is a switching device which can be driven directly by a 2.5 V power source.


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    PDF uPA1855 D13454EJ1V0DS00 PA1855

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE bbSB'lBl QQE'iBHB 17S • IAPX BLW50F b'JE D H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended fo r use in class-A, AB and B operated, industrial and military transmitters in the h.f. and v.h.f. band. Resistance stabilization provides


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    PDF BLW50F E13S1

    IR2422

    Abstract: DARLINGTON TRANSISTOR ARRAY J5001 BVCEO-45V T-52-13-45 45VForward
    Text: 1SE 0 | SHARP ELEK/ MELEC DIV 7-Unit 400mA Darlington Transistor Array 01007=10 0001=157 5 | T -5 2 -13-45 IR2422 7-Unit 400mA Darlington Transistor Array • Description Pin Connections The IR2422 is a 7-circuit driver. The internal clamping diodes enable the IC to drive the inductive


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    PDF 400mA 07Tfl T-52-13-45 IR2422 IR2422 400mA 16-pin 200mA DARLINGTON TRANSISTOR ARRAY J5001 BVCEO-45V 45VForward

    CA3246M

    Abstract: transistor k 911
    Text: CA3227, CA3246 Semiconductor September 1998 High-Frequency NPN Transistor Arrays For Low-Power Applications at Frequencies Up to 1.5GHz File Number 1345.4 Features • Gain-Bandwidth Product f j . >3GHz • Five Transistors on a Common Substrate


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    PDF CA3227, CA3246 CA3227 CA3246 CA3246M transistor k 911

    2SB983

    Abstract: 2SD1345
    Text: TENTATIVE D AT A îfH Ü T t C A T .N o . TK 350 SHINDENGEN Silicon Complementary Transistor High Current Switching SILICON POWER TRANSISTOR I = rV 3 ^ / i 7 - K T ^ s / 7 > IJ □ > N P N / P N P x M O U T L IN E - f 7 u — r m FEATURES D IM E N S IO N S


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    PDF TK350 2SB983 2SD1345

    cm 45-12

    Abstract: Mrf621 transistor 1346 420 NPN Silicon RF Transistor VK200 vk200 rf choke
    Text: MRF621 SILICON T h e R F L in e 45 W - 470 M Hz "CONTROLLED Q" RF POWER TRANSISTOR NPN SILICON NPN SILICON RF POWER TRANSISTOR . . .d es ig n e d fo r 1 2 .5 V o l t U H F large-signal a m p lifie r a p p lic a tio n s in industrial and c o m m e rc ia l


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    PDF MRF621 cm 45-12 Mrf621 transistor 1346 420 NPN Silicon RF Transistor VK200 vk200 rf choke

    1117 S 3,3 Transistor

    Abstract: Hall Sensor 4-lead S-Mini 1117 S Transistor transistor 1345
    Text: CONTENTS PREFACE Related Document System List of Small Signal Transistors & Diodes Surface Mount Devices . 5 1. Using Device Selection Flowchart . 15 General Purpose Low Frequency Transistor SelectionMethod .


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    PDF TA75W 1117 S 3,3 Transistor Hall Sensor 4-lead S-Mini 1117 S Transistor transistor 1345

    Untitled

    Abstract: No abstract text available
    Text: 2 CA3227, CA3246 High-Frequency NPN Transistor Arrays For LowPower Applications at Frequencies Up to 1.5GHz August 1996 Features Description • Gain-Bandwidth Product fT) .>3GHz The CA3227 and CA3246 consist of five general purpose sil­


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    PDF CA3227, CA3246 CA3227 CA3246 100kH CA3227

    transistor 1345

    Abstract: CA3246E 4460E 1333E
    Text: S CA3227, CA3246 High-Frequency NPN Transistor Arrays For LowPower Applications at Frequencies Up to 1.5GHz August 1996 Features • Description Gain-Bandwidth Product fT . >3G Hz The CA3227 and CA3246 consist of five general purpose sil­


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    PDF CA3227, CA3246 CA3227 CA3246 CA3227 transistor 1345 CA3246E 4460E 1333E