PBLS4005V
Abstract: PBLS4005Y marking S5 sot363 marking K5 sot363
Text: PBLS4005Y; PBLS4005V 40 V PNP BISS loadswitch Rev. 02 — 13 July 2005 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal BISS transistor and NPN ResistorEquipped Transistor (RET) in one package. Table 1:
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PBLS4005Y;
PBLS4005V
PBLS4005Y
OT363
SC-88
OT666
PBLS4005V
PBLS4005Y
marking S5 sot363
marking K5 sot363
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PBLS4004Y
Abstract: PBLS4004V sot363 marking K4
Text: PBLS4004Y; PBLS4004V 40 V PNP BISS loadswitch Rev. 02 — 11 July 2005 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal BISS transistor and NPN ResistorEquipped Transistor (RET) in one package. Table 1:
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PBLS4004Y;
PBLS4004V
PBLS4004Y
OT363
SC-88
OT666
PBLS4004Y
PBLS4004V
sot363 marking K4
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PBLS4003V
Abstract: PBLS4003Y
Text: PBLS4003Y; PBLS4003V 40 V PNP BISS loadswitch Rev. 02 — 14 July 2005 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal BISS transistor and NPN ResistorEquipped Transistor (RET) in one package. Table 1:
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PBLS4003Y;
PBLS4003V
PBLS4003Y
OT363
SC-88
OT666
PBLS4003V
PBLS4003Y
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PBLS4001V
Abstract: PBLS4001Y 13454
Text: PBLS4001Y; PBLS4001V 40 V PNP BISS loadswitch Rev. 01 — 8 November 2004 Product data sheet 1. Product profile 1.1 General description Low VCEsat PNP transistor and NPN resistor-equipped transistor in one package. Table 1: Product overview Type number Package
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PBLS4001Y;
PBLS4001V
PBLS4001Y
OT363
SC-88
OT666
PBLS4001V
PBLS4001Y
13454
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PBLS4003V
Abstract: Philips date CODE MARKING PBLS4003Y
Text: PBLS4003Y; PBLS4003V 40 V PNP BISS loadswitch Rev. 01.00 — 6 December 2004 Product data sheet 1. Product profile 1.1 General description Low VCEsat PNP transistor and NPN resistor-equipped transistor in one package. Table 1: Product overview Type number
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PBLS4003Y;
PBLS4003V
PBLS4003Y
OT363
SC-88
OT666
PBLS4003V
Philips date CODE MARKING
PBLS4003Y
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PBLS4004Y
Abstract: PBLS4004V sot363 marking K4
Text: PBLS4004Y; PBLS4004V 40 V PNP BISS loadswitch Rev. 01 — 13 December 2004 Product data sheet 1. Product profile 1.1 General description Low VCEsat PNP transistor and NPN resistor-equipped transistor in one package. Table 1: Product overview Type number Package
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PBLS4004Y;
PBLS4004V
PBLS4004Y
OT363
SC-88
OT666
PBLS4004Y
PBLS4004V
sot363 marking K4
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PBLS4001V
Abstract: PBLS4001Y
Text: PBLS4001Y; PBLS4001V 40 V PNP BISS loadswitch Rev. 02 — 25 April 2005 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough in Small Signal BISS transistor and NPN ResistorEquipped Transistor (RET) in one package. Table 1:
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PBLS4001Y;
PBLS4001V
PBLS4001Y
OT363
SC-88
OT666
PBLS4001V
PBLS4001Y
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PBLS4002Y
Abstract: PBLS4002V
Text: PBLS4002Y; PBLS4002V 40 V PNP BISS loadswitch Rev. 01 — 6 December 2004 Product data sheet 1. Product profile 1.1 General description Low VCEsat PNP transistor and NPN resistor-equipped transistor in one package. Table 1: Product overview Type number Package
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PBLS4002Y;
PBLS4002V
PBLS4002Y
OT363
SC-88
OT666
PBLS4002Y
PBLS4002V
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PBLS4002Y
Abstract: PBLS4002V
Text: PBLS4002Y; PBLS4002V 40 V PNP BISS loadswitch Rev. 02 — 19 July 2005 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal BISS transistor and NPN ResistorEquipped Transistor (RET) in one package. Table 1:
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PBLS4002Y;
PBLS4002V
PBLS4002Y
OT363
SC-88
OT666
PBLS4002Y
PBLS4002V
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PBLS4005V
Abstract: PBLS4005Y
Text: PBLS4005Y; PBLS4005V 40 V PNP BISS loadswitch Rev. 01 — 6 December 2004 Product data sheet 1. Product profile 1.1 General description Low VCEsat PNP transistor and NPN resistor-equipped transistor in one package. Table 1: Product overview Type number Package
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PBLS4005Y;
PBLS4005V
PBLS4005Y
OT363
SC-88
OT666
PBLS4005V
PBLS4005Y
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2SC 8550
Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
Text: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4
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3SK309
3SK317
3SK318
BB101C
BB102C
BB301C
BB302C
BB304C
BB305C
BB501C
2SC 8550
6020v4
6030v4
HITACHI 08122B
2SC 8050
HITACHI 08123B
transistor h945
H945
TRANSISTOR c 6030v4
2sk3545
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CA3246M
Abstract: CA3246 CA3246M96 850e 610E CA3227 CA3227E CA3227M CA3227M96 SPICE 2G6
Text: CA3227, CA3246 Data Sheet High-Frequency NPN Transistor Arrays For Low-Power Applications at Frequencies Up to 1.5GHz September 1998 File Number 1345.4 Features • Gain-Bandwidth Product fT . . . . . . . . . . . . . . . . . >3GHz • Five Transistors on a Common Substrate
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CA3227,
CA3246
CA3227
CA3246
CA3246M
CA3246M96
850e
610E
CA3227E
CA3227M
CA3227M96
SPICE 2G6
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Semiconductor 1346 transistor
Abstract: No abstract text available
Text: ON Semiconductort MPSW92 One Watt High Voltage Transistor ON Semiconductor Preferred Device PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −300 Vdc Collector −Base Voltage VCBO −300 Vdc Emitter −Base Voltage
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MPSW92
O-226AE)
Semiconductor 1346 transistor
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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RCA H 541
Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
Text: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK
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Untitled
Abstract: No abstract text available
Text: DATA SH EE T MOS FIELD EFFECT TRANSISTOR _¿ ¿ P A 1 8 5 5 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The ,uPA1855 is a switching device which can be driven directly by a 2.5 V power source.
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uPA1855
D13454EJ1V0DS00
PA1855
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bbSB'lBl QQE'iBHB 17S • IAPX BLW50F b'JE D H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended fo r use in class-A, AB and B operated, industrial and military transmitters in the h.f. and v.h.f. band. Resistance stabilization provides
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BLW50F
E13S1
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IR2422
Abstract: DARLINGTON TRANSISTOR ARRAY J5001 BVCEO-45V T-52-13-45 45VForward
Text: 1SE 0 | SHARP ELEK/ MELEC DIV 7-Unit 400mA Darlington Transistor Array 01007=10 0001=157 5 | T -5 2 -13-45 IR2422 7-Unit 400mA Darlington Transistor Array • Description Pin Connections The IR2422 is a 7-circuit driver. The internal clamping diodes enable the IC to drive the inductive
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400mA
07Tfl
T-52-13-45
IR2422
IR2422
400mA
16-pin
200mA
DARLINGTON TRANSISTOR ARRAY
J5001
BVCEO-45V
45VForward
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CA3246M
Abstract: transistor k 911
Text: CA3227, CA3246 Semiconductor September 1998 High-Frequency NPN Transistor Arrays For Low-Power Applications at Frequencies Up to 1.5GHz File Number 1345.4 Features • Gain-Bandwidth Product f j . >3GHz • Five Transistors on a Common Substrate
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CA3227,
CA3246
CA3227
CA3246
CA3246M
transistor k 911
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2SB983
Abstract: 2SD1345
Text: TENTATIVE D AT A îfH Ü T t C A T .N o . TK 350 SHINDENGEN Silicon Complementary Transistor High Current Switching SILICON POWER TRANSISTOR I = rV 3 ^ / i 7 - K T ^ s / 7 > IJ □ > N P N / P N P x M O U T L IN E - f 7 u — r m FEATURES D IM E N S IO N S
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TK350
2SB983
2SD1345
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cm 45-12
Abstract: Mrf621 transistor 1346 420 NPN Silicon RF Transistor VK200 vk200 rf choke
Text: MRF621 SILICON T h e R F L in e 45 W - 470 M Hz "CONTROLLED Q" RF POWER TRANSISTOR NPN SILICON NPN SILICON RF POWER TRANSISTOR . . .d es ig n e d fo r 1 2 .5 V o l t U H F large-signal a m p lifie r a p p lic a tio n s in industrial and c o m m e rc ia l
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MRF621
cm 45-12
Mrf621
transistor 1346
420 NPN Silicon RF Transistor
VK200
vk200 rf choke
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1117 S 3,3 Transistor
Abstract: Hall Sensor 4-lead S-Mini 1117 S Transistor transistor 1345
Text: CONTENTS PREFACE Related Document System List of Small Signal Transistors & Diodes Surface Mount Devices . 5 1. Using Device Selection Flowchart . 15 General Purpose Low Frequency Transistor SelectionMethod .
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TA75W
1117 S 3,3 Transistor
Hall Sensor 4-lead
S-Mini
1117 S Transistor
transistor 1345
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Untitled
Abstract: No abstract text available
Text: 2 CA3227, CA3246 High-Frequency NPN Transistor Arrays For LowPower Applications at Frequencies Up to 1.5GHz August 1996 Features Description • Gain-Bandwidth Product fT) .>3GHz The CA3227 and CA3246 consist of five general purpose sil
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CA3227,
CA3246
CA3227
CA3246
100kH
CA3227
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transistor 1345
Abstract: CA3246E 4460E 1333E
Text: S CA3227, CA3246 High-Frequency NPN Transistor Arrays For LowPower Applications at Frequencies Up to 1.5GHz August 1996 Features • Description Gain-Bandwidth Product fT . >3G Hz The CA3227 and CA3246 consist of five general purpose sil
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CA3227,
CA3246
CA3227
CA3246
CA3227
transistor 1345
CA3246E
4460E
1333E
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