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    TRANSISTOR 1317 Search Results

    TRANSISTOR 1317 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 1317 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    486DX-CPU

    Abstract: tamagawa 486DX transistors mos retrograde well 0.35
    Text: MOS Scaling: Transistor Challenges for the 21st Century Scott Thompson, Portland Technology Development, Intel Corp. Paul Packan, Technology Computer Aided Design, Intel Corp. Mark Bohr, Portland Technology Development, Intel Corp. Index words: SDE, transistor, scaling


    Original     		PDF

    SEMICOA 2N2946A

    Abstract: No abstract text available
    Text: 2N2946A Silicon PNP Transistor D a ta S h e e t Description Applications SEMICOA Corporaton offers: • General purpose • Low power • PNP silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N2946AJ • JANTX level (2N2946AJX)


    Original     		PDF 2N2946A MIL-PRF-19500 2N2946AJ) 2N2946AJX) 2N2946AJV) 2N2946AJS) MIL-STD-750 MIL-PRF-19500/382 SEMICOA 2N2946A

    2N2946A JANTX

    Abstract: 2N2946
    Text: 2N2946A Silicon PNP Transistor D a ta S h e e t Description Applications Semicoa offers: • General purpose • Low power • PNP silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N2946AJ • JANTX level (2N2946AJX)


    Original     		PDF 2N2946A MIL-PRF-19500 2N2946AJ) 2N2946AJX) 2N2946AJV) 2N2946AJS) MIL-STD-750 MIL-PRF-19500/382 2N2946A JANTX 2N2946

    2SC 8550

    Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
    Text: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4


    Original     		PDF 3SK309 3SK317 3SK318 BB101C BB102C BB301C BB302C BB304C BB305C BB501C 2SC 8550 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545

    Untitled

    Abstract: No abstract text available
    Text: ON Semiconductort Amplifier Transistor MPSL51 PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −100 Vdc Collector −Base Voltage VCBO −100 Vdc Emitter −Base Voltage VEBO −4.0 Vdc Collector Current — Continuous


    Original     		PDF MPSL51 O-226AA)

    PHX27NQ11T

    Abstract: No abstract text available
    Text: PHX27NQ11T N-channel TrenchMOS standard level FET Rev. 01 — 14 May 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a fully isolated encapsulated plastic package using TrenchMOS™ technology.


    Original     		PDF PHX27NQ11T OT186A O-220F) PHX27NQ11T

    PHX34NQ11T

    Abstract: No abstract text available
    Text: PHX34NQ11T N-channel TrenchMOS standard level FET Rev. 01 — 13 May 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a fully isolated encapsulated plastic package using TrenchMOS™ technology.


    Original     		PDF PHX34NQ11T OT186A O-220F) PHX34NQ11T

    PHX23NQ11T

    Abstract: TO-220F JEDEC
    Text: PHX23NQ11T N-channel TrenchMOS standard level FET Rev. 01 — 14 May 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a fully isolated encapsulated plastic package using TrenchMOS™ technology.


    Original     		PDF PHX23NQ11T OT186A O-220F) PHX23NQ11T TO-220F JEDEC

    PHB110NQ06LT

    Abstract: PHP110NQ06LT
    Text: PHP/PHB110NQ06LT N-channel TrenchMOS logic level FET Rev. 01 — 04 May 2004 Product data 1. Product profile 1.1 Description Logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features


    Original     		PDF PHP/PHB110NQ06LT O-220AB) OT404 PHB110NQ06LT PHP110NQ06LT

    PHB119NQ06T

    Abstract: PHP119NQ06T
    Text: PHP/PHB119NQ06T N-channel TrenchMOS standard level FET Rev. 01 — 05 May 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features • Standard level threshold


    Original     		PDF PHP/PHB119NQ06T O-220AB) OT404 PHB119NQ06T PHP119NQ06T

    PHB145NQ06T

    Abstract: No abstract text available
    Text: PHB145NQ06T N-channel TrenchMOS standard level FET Rev. 01 — 06 May 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features • Standard level threshold


    Original     		PDF PHB145NQ06T OT404 PHB145NQ06T

    PHB146NQ06LT

    Abstract: No abstract text available
    Text: PHB146NQ06LT N-channel TrenchMOS logic level FET Rev. 01 — 10 May 2004 Product data 1. Product profile 1.1 Description Logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features • Logic level threshold


    Original     		PDF PHB146NQ06LT OT404 PHB146NQ06LT

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable blocking voltage, fast switching and hign


    OCR Scan     		PDF PHD5N20E OT428

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    BFT46

    Abstract: No abstract text available
    Text: • L.bSB'm DD253fll 31T H A P X N AUER PHILIPS/DISCRETE b7E » BFT46 y v N-CHANNEL SILICON FET Symmetrical n-channel silicon epitaxial planar junction field-effect transistor in a microminiature plastic envelope. The transistor is intended for low level general purpose amplifiers in thick and thin-film


    OCR Scan     		PDF DD253fll BFT46 0D253fib 00ES367 BFT46

    lm394

    Abstract: LM194 NPN Monolithic Transistor Pair accurate logging amplifier LM394CH
    Text: LM194/LM394 EHNational ^•Sem iconductor LM194/LM394 Supermatch Pair General Description The LM194 and LM394 are junction isolated ultra wellmatched monolithic NPN transistor pairs with an order of magnitude improvement in matching over conventional tran­


    OCR Scan     		PDF LM194/LM394 LM194/LM394 LM194 LM394 TL/H/9241-10 TL/H/9241-11 TL/H/9241-12 LM194H, LM194H/883* LM394H, LM194 NPN Monolithic Transistor Pair accurate logging amplifier LM394CH

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


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    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


    OCR Scan     		PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643

    transistor 2N4

    Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
    Text: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION


    OCR Scan     		PDF

    E 94733

    Abstract: p1S SOT-89 BFr pnp transistor SPICE 2G6
    Text: SIEMENS BFR 92W NPN Silicon RF Transistor • For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA • Complementary type: BFT 92W PNP ESP: Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		PDF Q62702-F1488 OT-323 900MHz E 94733 p1S SOT-89 BFr pnp transistor SPICE 2G6

    IR LFN

    Abstract: LFN ir D0113 CJ10L 2N7225 IRFM250 2N7225 JANTX 024-S
    Text: Data Sheet No. PD-9.554D INTERNATIONAL RECTIFIER IO R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFM250 SN7SS5 JANTX2N7225 JANTXV2N72S5 N-CHANNEL REF: MIL-S-1S500/5B&] Product Summary 200 Volt, 0.100 Ohm HEXFET The HEXFET® technology is the key to International


    OCR Scan     		PDF MIL-S-19500/59S] IRFM2500 IRFM250U O-254 mil-s-195m IR LFN LFN ir D0113 CJ10L 2N7225 IRFM250 2N7225 JANTX 024-S

    SN7S85

    Abstract: No abstract text available
    Text: Data Sheet No. PD-9.554D INTERNATIONAL RECTIFIER I«R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFMS50 SN7S85 JANTX2N7225 "* ~ ~ JAIMTXV2N7225 N-CHANNEL [R E F : M IL -8 -1 9 5 0 0 / 5 9 S ] Product Summary 200 Volt, 0.100 Ohm HEXFET


    OCR Scan     		PDF IRFMS50 SN7S85 JANTX2N7225 JAIMTXV2N7225 IRFM25QD IRFM250U O-254 MIL-S-19500 I-324

    C3781

    Abstract: 2N7225 IRFM250 2N7225 JANTX transistor 1317 i324
    Text: Data Sheet No. PD-9.554D INTERNATIONAL RECTIFIER I R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR t N-CHANNEL IRFMS50 SN7SS5 JANTX2N7S25 JAIMTXV2N7225 REF: MIL-S-19500/5 9 5 ] Product Summary 200 Volt, 0.100 Ohm HEXFET The HEXFET® technology is the key to International


    OCR Scan     		PDF IRFM250 MIL-S-19500/595] irfm250d irfm250u O-254 Mll-S-19500 I-324 C3781 2N7225 IRFM250 2N7225 JANTX transistor 1317 i324