TRANSISTOR 1301 Search Results

TRANSISTOR 1301 Result Highlights (5)

Part	Manufacturer	Description
XPH13016MC	Toshiba Electronic Devices & Storage Corporation	P-ch MOSFET, -60 V, -60 A, 0.0099 Ω@-10V, SOP Advance(WF)
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
2SB1301-T1-AZ	Renesas Electronics Corporation	Small Signal Bipolar Transistors
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL

TRANSISTOR 1301 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: R5527K SERIES 3A Load Switch IC NO. EA-312-130122 OUTLINE The R5527K Series are N-channel load switch ICs with low supply current, Typ. 40µA. By using an Nch transistor as a driver transistor, the features of low on resistance and the reverse current protection at on/off state	Original	R5527K EA-312-130122 1612-4D Room403, Room109,	PDF
capacitor philips Abstract: transistor C3 Text: BLF6G20-45; BLF6G20S-45 Power LDMOS transistor Rev. 3 — 11 March 2013 Product data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance	Original	BLF6G20-45; BLF6G20S-45 BLF6G20-45 capacitor philips transistor C3	PDF
BLF6G38S-25 Abstract: transistor equivalent table BDS3/3/4.6-4S2 BDS3/3/4.6-4S2-Z Text: BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor Rev. 3 — 11 March 2013 Product data sheet 1. Product profile 1.1 General description 25 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3800 MHz. Table 1. Typical performance	Original	BLF6G38-25; BLF6G38S-25 ACPR885k ACPR1980k IS-95 BLF6G38-25 BLF6G38S-25 transistor equivalent table BDS3/3/4.6-4S2 BDS3/3/4.6-4S2-Z	PDF
Untitled Abstract: No abstract text available Text: BLF6G27-45; BLF6G27S-45 WiMAX power LDMOS transistor Rev. 4 — 7 March 2013 Product data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance	Original	BLF6G27-45; BLF6G27S-45 ACPR885k ACPR1980k BLF6G27-45	PDF
RF NPN POWER TRANSISTOR 3 GHZ 200 watts Abstract: No abstract text available Text: e PTB 20079 10 Watts, 1.6–1.7 GHz INMARSAT RF Power Transistor Description The 20079 is a class A/AB, NPN, silicon bipolar junction, internallymatched, common emitter RF Power transistor intended for 26 Vdc operation across 1.6 to 1.7 GHz frequency band. It is rated at 10	Original	1-877-GOLDMOS 1301-PTB RF NPN POWER TRANSISTOR 3 GHZ 200 watts	PDF
nxp 1791 Abstract: radar 77 ghz NXP Text: BLS6G3135-20; BLS6G3135S-20 LDMOS S-Band radar power transistor Rev. 4 — 11 March 2013 Product data sheet 1. Product profile 1.1 General description 20 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range. Table 1. Typical performance	Original	BLS6G3135-20; BLS6G3135S-20 BLS6G3135-20 6G3135S-20 nxp 1791 radar 77 ghz NXP	PDF
Untitled Abstract: No abstract text available Text: e PTB 20216 6 Watts, 1.8–2.0 GHz RF Power Transistor Description The 20216 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation across the 1.80 to 2.00 GHz frequency band. Rated at 6 watts minimum output power, it may be used for	Original	1-877-GOLDMOS 1301-PTB	PDF
Untitled Abstract: No abstract text available Text: e PTB 20220 15 Watts, 915–960 MHz Cellular Radio RF Power Transistor Description The 20220 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 915 to 960 MHz frequency band. Rated at 15 watts minimum output power for PEP applications,	Original	1-877-GOLDMOS 1301-PTB	PDF
Untitled Abstract: No abstract text available Text: e PTB 20080 25 Watts, 1.6–1.7 GHz RF Power Transistor Description ThPTB 20080 is a class A/AB, NPN, silicon bipolar junction, internallymatched RF power transistor intended for 26 Vdc operation from 1.6 to 1.7 GHz. It is rated at 25 Watts minimum output power for PEP	Original	1-877-GOLDMOS 1301-PTB	PDF
transistor 1850 Abstract: No abstract text available Text: e PTB 20156 8 Watts, 1350–1850 MHz Microwave Power Transistor Description The 20156 is an NPN, common base RF power transistor intended for 22 Vdc operation from 1350 to 1850 MHz. Rated at 8 watts minimum output power, it may be used for both CW and PEP	Original	1-877-GOLDMOS 1301-PTB transistor 1850	PDF
420 NPN Silicon RF Transistor Abstract: No abstract text available Text: e PTB 20030 15 Watts, 420–470 MHz RF Power Transistor Description The 20030 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation across the 420 to 470 MHz frequency band. Rated at 15 watts minimum output power, it may be used for	Original	1-877-GOLDMOS 1301-PTB 420 NPN Silicon RF Transistor	PDF
ericsson 20151 Abstract: 9434 1198E bav 17 diode Text: e PTB 20151 45 Watts, 1.8–2.0 GHz PCN/PCS Power Transistor Description The 20151 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 45 watts minimum output power for PEP applications, it is specifically intended	Original	ATC-100 G-200 1-877-GOLDMOS 1301-PTB ericsson 20151 9434 1198E bav 17 diode	PDF
828 TRANSISTOR equivalent Abstract: No abstract text available Text: e PTB 20230 45 Watts, 1.8–2.0 GHz PCN/PCS Power Transistor Description The 20230 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 45 watts minimum output power for PEP applications, it is specifically intended	Original	1-877-GOLDMOS 1301-PTB 828 TRANSISTOR equivalent	PDF
PTB 20200 Abstract: No abstract text available Text: e PTB 20167 60 Watts, 850–960 MHz RF Power Transistor Description The 20167 is an NPN, common base RF power transistor intended for 24 Vdc operation from 850 to 960 MHz. Rated at 60 watts minimum output power, it is specifically designed for class C power amplifier	Original	1-877-GOLDMOS 1301-PTB PTB 20200	PDF

PTB 20200 Abstract: No abstract text available Text: e PTB 20200 30 Watts, 380–500 MHz RF Power Transistor Description The 20200 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation from 380–500 MHz. Rated at 30 watts minimum output power, it may be used for both CW and PEP	Original	1-877-GOLDMOS 1301-PTB PTB 20200	PDF
Untitled Abstract: No abstract text available Text: e PTB 20230 45 Watts, 1.8–2.0 GHz PCN/PCS Power Transistor Description The 20230 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 45 watts minimum output power for PEP applications, it is specifically intended	Original	1-877-GOLDMOS 1301-PTB	PDF
9434 Abstract: No abstract text available Text: e PTB 20216 6 Watts, 1.8–2.0 GHz RF Power Transistor Description The 20216 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation across the 1.80 to 2.00 GHz frequency band. Rated at 6 watts minimum output power, it may be used for	Original	1-877-GOLDMOS 1301-PTB 9434	PDF
8801 Abstract: No abstract text available Text: e PTB 20176 5 Watts, 1.78–1.92 GHz RF Power Transistor Description The 20176 is a common emitter RF power transistor intended for 26 Vdc operation from 1.78 to 1.92 GHz. Rated at 5 watts minimum output power, it is specifically designed for class A or AB linear power	Original	1-877-GOLDMOS 1301-PTB 8801	PDF
PTB 20017 Abstract: No abstract text available Text: e PTB 20017 150 Watts, 860–900 MHz Cellular Radio RF Power Transistor Description The 20017 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 860 to 900 MHz cellular radio frequency band. Rated at 150 watts minimum output power, it	Original	1-877-GOLDMOS 1301-PTB PTB 20017	PDF
Johanson Piston Trimmer Abstract: G200 3 w RF POWER TRANSISTOR NPN 5.8 ghz Text: e PTB 20202 125 Watts, 1465–1513 MHz Cellular/DAB RF Power Transistor Description The 20202 is an NPN common emitter RF power transistor intended for 26 Vdc class AB operation from 1.45 to 1.52 GHz. Rated at 125 watts minimum output power, it is specifically intended for cellular	Original	1-877-GOLDMOS 1301-PTB Johanson Piston Trimmer G200 3 w RF POWER TRANSISTOR NPN 5.8 ghz	PDF
2SB1301 Abstract: MARKING Z.R 2SD1952 marking zr IEI-1213 MEI-1202 MF-1134 Text: DATA SHEET SILICON TRANSISTOR 2S B 1301 PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION 2SB 1301 is designed for audio frequency pow er am plifier and switching application, especially in H yb rid Integrated Circuits. FEATURES PACKAGE DIMENSIONS	OCR Scan	2SB1301 2SB1301 2SD1952 MARKING Z.R 2SD1952 marking zr IEI-1213 MEI-1202 MF-1134	PDF
2sb504 Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52 Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle	OCR Scan		PDF
y51 h 120c Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK	OCR Scan	500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711	PDF
sx3704 Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353 Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide	OCR Scan		PDF

TRANSISTOR 1301 Search Results

TRANSISTOR 1301 Result Highlights (5)

TRANSISTOR 1301 Datasheets Context Search

Untitled

capacitor philips

BLF6G38S-25

Untitled

RF NPN POWER TRANSISTOR 3 GHZ 200 watts

nxp 1791

Untitled

Untitled

Untitled

transistor 1850

420 NPN Silicon RF Transistor

ericsson 20151

828 TRANSISTOR equivalent

PTB 20200

PTB 20200

Untitled

9434

8801

PTB 20017

Johanson Piston Trimmer

2SB1301

2sb504

y51 h 120c

sx3704