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    TRANSISTOR 13005N Search Results

    TRANSISTOR 13005N Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 13005N Datasheets Context Search

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    transistor 13005N

    Abstract: No abstract text available
    Text: ST13005N High voltage fast-switching NPN power transistor Features • High voltage capability ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Electronic ballast for fluorescent lighting ■ Switch mode power supplies


    Original     		PDF ST13005N O-220 130ny transistor 13005N

    13005N

    Abstract: transistor 13005N transistor Electronic ballast STMicroelectronics to-220 date code ST13005N ELECTRONIC BALLAST transistor DIAGRAM ST130
    Text: ST13005N High voltage fast-switching NPN power transistor Features • High voltage capability ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications 3 ■ Electronic ballast for fluorescent lighting ■ Switch mode power supplies


    Original     		PDF ST13005N O-220 13005Nny 13005N transistor 13005N transistor Electronic ballast STMicroelectronics to-220 date code ST13005N ELECTRONIC BALLAST transistor DIAGRAM ST130

    13005n

    Abstract: transistor 13005N AM09214V1 STU13005N
    Text: STU13005N High voltage fast-switching NPN power transistor Features • High voltage capability ■ Low spread of dynamic parameters ■ Very high switching speed 3 Application 2 1 ■ Switch mode power supplies AC-DC converters IPAK Description This device is manufactured using high voltage


    Original     		PDF STU13005N 13005N STU1300in transistor 13005N AM09214V1 STU13005N