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    TRANSISTOR 13003 Search Results

    TRANSISTOR 13003 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 13003 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    13003D

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 13003DE Preliminary NPN SILICON TRANSISTOR SILICON TRIPLE DIFFUSION NPN BIPOLAR TRANSISTORS „ DESCRIPTION The UTC 13003DE is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high


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    13003DE 13003DE 13003DEL-x-T60-F-K 13003DEG-x-T60-F-K 13003DEL-x-T92-A-B 13003DEG-x-T92-A-B 1300at QW-R223-013 13003D PDF

    13003d

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 13003DE Preliminary NPN SILICON TRANSISTOR SILICON TRIPLE DIFFUSION NPN BIPOLAR TRANSISTORS  DESCRIPTION The UTC 13003DE is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high


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    13003DE 13003DE 13003DEL-x-T60-K 13003DEG-x-T60-K 13003DEL-x-T92-B 13003DEG-at QW-R223-013 13003d PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 13003DH Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION  DESCRIPTION The UTC 13003DH is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high


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    13003DH 13003DH 13003DHL-x-TM3-T 13003DHL-x-T60-K QW-R223-011 PDF

    13003ADA

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 13003ADA Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION  DESCRIPTION The UTC 13003ADA is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high


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    13003ADA 13003ADA 13003ADAL-TM3-T 13003ADAL-T60-K QW-R223-016 PDF

    13003AD

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 13003ADA Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION  DESCRIPTION The UTC 13003ADA is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high


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    13003ADA 13003ADA 13003ADAL-TM3-T 13003ADAL-T60-F-at QW-R223-016 13003AD PDF

    13003ad

    Abstract: 13003ADA
    Text: UNISONIC TECHNOLOGIES CO., LTD 13003ADA Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION „ DESCRIPTION The UTC 13003ADA is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high


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    13003ADA 13003ADA 13003ADAL-TM3-T 13003ADAL-T60-F-K 13003ADAL-T92-F-B 13003ADAL-T9at QW-R223-016 13003ad PDF

    NPN transistor Electronic ballast to92

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 13003DW Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION „ DESCRIPTION The UTC 13003DW is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high


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    13003DW 13003DW 13003DWL-x-TM3-T 13003DWL-x-T60-F-K 13003DWL-x-T92-A-B 13003DWL-x-T92-A-K 13003Dat QW-R223-012 NPN transistor Electronic ballast to92 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 13003BS Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION  DESCRIPTION The UTC 13003BS is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high


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    13003BS 13003BS 13003BSL-TM3-T 13003BSL-T60-K 1300at QW-R223-018 PDF

    13003bd

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 13003BDG Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION „ DESCRIPTION The UTC 13003BDG is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high


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    13003BDG 13003BDG 13003BDGL-TM3-T 13003BDGL-T60-F-K 13003BDGL-T92-F-B QW-R223-017 13003bd PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 13003BS Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION  DESCRIPTION The UTC 13003BS is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high


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    13003BS 13003BS 13003BSL-TM3-T 13003BSL-T60-K 1300t QW-R223-018. PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 13003BS Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION  DESCRIPTION The UTC 13003BS is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high


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    13003BS 13003BS 13003BSL-TM3-T 13003BSL-T60-K 1300at QW-R223-018 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 13003EDA Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION  DESCRIPTION The UTC 13003EDA is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high


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    13003EDA 13003EDA 13003EDAL-TM3-T 13003EDAL-T60-K QW-R223-020 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 13003EDA Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION „ DESCRIPTION The UTC 13003EDA is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high


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    13003EDA 13003EDA 13003EDAL-TM3-T 13003EDAL-T60-F-K 13003EDAL-T92-F-B QW-R223-020 PDF

    13003 TRANSISTOR

    Abstract: st 13003 TRANSISTOR npn transistor 13003 13003 ST 13003 w 13003 npn transistor ST 13003 w W 13003 TRANSISTOR transistor ST 13003 w, TO-220 13003 to-220
    Text: ST 13003 NPN Silicon Epitaxial Planar Transistor for power switching and electron rectifier applications. The transistor is subdivided into one group according to its DC current gain. TO-220 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol


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    O-220 13003 TRANSISTOR st 13003 TRANSISTOR npn transistor 13003 13003 ST 13003 w 13003 npn transistor ST 13003 w W 13003 TRANSISTOR transistor ST 13003 w, TO-220 13003 to-220 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 13003BS Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION „ DESCRIPTION The UTC 13003BS is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high


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    13003BS 13003BS 13003BSL-TM3-T 13003BSL-T60-F-K 13003BSL-T92-F-B 13003BSL-T92-F-K QW-R223-018 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 13003DW Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION  DESCRIPTION The UTC 13003DW is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high


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    13003DW 13003DW 13003DWL-x-TM3-T 13003DWL-x-T60-K 13003DWL-x-T92-B 13003DWL-x-T92-K QW-R223-012 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 13003DF Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION „ DESCRIPTION The UTC 13003DF is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high


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    13003DF 13003DF 13003DFL-xx-T60-F-K 13003DFG-xx-T60-F-K 13003DFL-xx-T9at QW-R223-014 PDF

    13003 TRANSISTOR

    Abstract: transistor 13003 st 13003 TRANSISTOR npn 13003 transistor ST 13003 w, TO-220 W 13003 TRANSISTOR st 13003 w 13003 power transistor 13003 TRANSISTOR npn 13003 npn
    Text: ST 13003 NPN Silicon Epitaxial Planar Transistor for power switching and electron rectifier applications. The transistor is subdivided into one group according to its DC current gain. TO-220 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol


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    O-220 13003 TRANSISTOR transistor 13003 st 13003 TRANSISTOR npn 13003 transistor ST 13003 w, TO-220 W 13003 TRANSISTOR st 13003 w 13003 power transistor 13003 TRANSISTOR npn 13003 npn PDF

    13003 TRANSISTOR

    Abstract: E 13003 TRANSISTOR 13003 TRANSISTOR npn 13003 NPN Transistor features transistor 13003 13003 F 13003 T 13003 transistor transistor D 1710 HSiN Semiconductor Pte
    Text: 13003 Transistor NPN www.hsin.com.sg HSiN Semiconductor Pte Ltd 13003 TO—220 TRANSISTOR( NPN ) FEATURES Power dissipation PCM : 1.5 W(Tamb=25℃) Collector current ICM : 1.5 A Collector-base voltage V(BR)CBO : 700 V Operating and storage junction temperature range


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    O--220 100TYP 540TYP 13003 TRANSISTOR E 13003 TRANSISTOR 13003 TRANSISTOR npn 13003 NPN Transistor features transistor 13003 13003 F 13003 T 13003 transistor transistor D 1710 HSiN Semiconductor Pte PDF

    13003CD

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 13003CDH Preliminary NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR „ DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch


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    13003CDH 290ns 13003CDHL-TM3-T 13003CDHGat QW-R223-022 13003CD PDF

    T92 DIODE

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 13003ADG Preliminary NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR „ DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch


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    13003ADG 290ns 13003ADGL-TM3-T 13003ADGPat QW-R223-023 T92 DIODE PDF

    APT13003Z-E1

    Abstract: transistor 2808 APT13003 bcd
    Text: Preliminary Datasheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR General Description Features The APT13003 is a high voltage, high speed switching NPN Power transistor specially designed for off-line switch mode power supplies with low output power.


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    APT13003 APT13003 APT13003Z-E1 transistor 2808 APT13003 bcd PDF

    PC 13003 TRANSISTOR

    Abstract: SH 13003 SH 13003 TRANSISTOR E 13003 TRANSISTOR 13003 TRANSISTOR PC 13003 TRANSISTOR 13003 npn E 13003 b TRANSISTOR voltage REGULATOR 13003 transistor 13003 k T 13003 transistor
    Text: NPN SILICON TRANSISTOR K SH 13003 High Voltage Power Transistor D-PACK For surface Mount Applications D-PAK • High speed Switching • Suitable for Switching Regulator and Motor Control • Straight Lead I.PACK, I Suffix • Lead Formed for Surface Mount Applications(No Suffix)


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    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


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