GRM55DR61H106KA88B
Abstract: No abstract text available
Text: Document Number: MHT1000H Rev. 0, 5/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET MHT1000HR5 RF power transistor suitable for industrial heating applications operating at 2450 MHz. Device is capable of both CW and pulse operation.
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MHT1000H
MHT1000HR5
GRM55DR61H106KA88B
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Product Selector Guide
Abstract: NI-400S-2S
Text: RF Military Power LDMOS Transistors Freescale’s LDMOS technology is ideally suited for military applications such as battlefield communications, primary radar covering HF, VHF, UHF, L-Band, S-Band, and avionics such as IFF transponders , and electronic warfare jamming. The high
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MMRF2004NBR1ï
MMRF2006NT1ï
1230S--4L2L
NI--780GS--4L
NI--880XGS--2L
NI--1230H--4S
NI--1230S--4S4S
OM--780--2L
OM--780G--2L
OM--780--4L
Product Selector Guide
NI-400S-2S
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Freescale Semiconductor, Inc. Available at: Available at http://www.motorola.com/rf, Go to Tools SEMICONDUCTOR TECHNICAL DATA RF Reference Design Library The RF Sub–Micron MOSFET Line RF Power Field-Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs
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MRF5S21150
MRF5S21150R3
MRF5S21150S
MRF5S21150SR3
RDMRF5S21150UMTS
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MOSFET 1300 F2
Abstract: 465B AN1955 CDR33BX104AKWS MRF19125 MRF19125R3 3052 mosfet
Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF19125/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line RF Power Field Effect Transistor MRF19125R3 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFET
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MRF19125/D
MRF19125R3
MOSFET 1300 F2
465B
AN1955
CDR33BX104AKWS
MRF19125
MRF19125R3
3052 mosfet
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sot-23 MARKING 636
Abstract: No abstract text available
Text: S852T / S852TW Vishay Semiconductors Silicon NPN Planar RF Transistor 1 Features • • • • • • • SOT-23 Low supply voltage Low current consumption e3 50 Ω input impedance at 945 MHz Low noise figure High power gain Lead Pb -free component Component in accordance to RoHS 2002/95/EC
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S852T
S852TW
2002/95/EC
2002/96/EC
OT-23
OT-323
OT-23
S852TW
OT-323
sot-23 MARKING 636
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MOSFET 1300 F2
Abstract: 100B100JCA500X 465B CDR33BX104AKWS MRF19125 MRF19125R3
Text: Freescale Semiconductor Technical Data Document Number: MRF19125 Rev. 8, 10/2008 RF Power Field Effect Transistor MRF19125R3 Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier
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MRF19125
MRF19125R3
MOSFET 1300 F2
100B100JCA500X
465B
CDR33BX104AKWS
MRF19125
MRF19125R3
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF19125 Rev. 7, 10/2008 RF Power Field Effect Transistor MRF19125SR3 Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier
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MRF19125
MRF19125SR3
MRF19125
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Untitled
Abstract: No abstract text available
Text: Document Number: MRF19125 Rev. 8, 10/2008 Freescale Semiconductor Technical Data RF Power Field Effect Transistor MRF19125R3 Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier
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MRF19125
MRF19125R3
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232273461009L
Abstract: transistor mosfet J306 ATC100B2R0BT500X j327 transistor Transistor J182 232273461009 ATC100B470 ATC100B1R2BT500XT j349 AN1955
Text: Freescale Semiconductor Technical Data Document Number: MRF8S9202N Rev. 0, 12/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8S9202NR3 Designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base
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MRF8S9202N
MRF8S9202NR3
232273461009L
transistor mosfet J306
ATC100B2R0BT500X
j327 transistor
Transistor J182
232273461009
ATC100B470
ATC100B1R2BT500XT
j349
AN1955
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Available at: http://www.motorola.com/rf/ Tools RF Reference Design Library MRF21125 Wideband CDMA The RF MOSFET Line RF Power Field Effect Transistors Freescale Semiconductor, Inc. N–Channel Enhancement–Mode Lateral MOSFETs
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MRF21125
MRF21125
RDMRF21125WCDMA
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S852T
Abstract: S852TW
Text: S852T / S852TW Vishay Semiconductors Silicon NPN Planar RF Transistor 1 Features • • • • • • • SOT-23 Low supply voltage Low current consumption e3 50 Ω input impedance at 945 MHz Low noise figure High power gain Lead Pb -free component Component in accordance to RoHS 2002/95/EC
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S852T
S852TW
OT-23
2002/95/EC
2002/96/EC
OT-323
S852T
OT-23
OT-323
S852TW
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Available at http://www.freescale.com. Go to Support/ Reference Designs/Networking and Communications Rev. 3, 12/2005 N - Channel Enhancement - Mode Lateral MOSFETs Device Characteristics From Device Data Sheet Designed for W- CDMA base station applications with frequencies from 2110
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MRF21125R3
MRF21125SR3
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2N4341
Abstract: 2N4340 2N4340 equivalent SMP4340 NJ16 SMP4341 transistor 2N4340
Text: Databook.fxp 1/13/99 2:09 PM Page B-12 B-12 01/99 2N4340, 2N4341 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Small Signal Amplifiers ¥ Current Regulators ¥ Voltage-Controlled Resistors At 25°C free air temperature:
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2N4340,
2N4341
2N4340
SMP4340,
SMP4341
2N4341
2N4340
2N4340 equivalent
SMP4340
NJ16
SMP4341
transistor 2N4340
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ofdm predistortion
Abstract: CGH21120 transistors cross reference cgh40120F Digital Transistors Cross Reference CGH25120F RF power transistors cross reference GaN on SiC HEMT Pulsed Power Transistor Peak digital Pre-distortion Gan hemt transistor
Text: May 2009 Short range wireless UWB GPS and satellite GaN HEMT transistors Advances in high power GaN HEMT transistors By Simon Wood, Carl Platis, Don Farrell, Brad Millon, Bill Pribble, Peter Smith, Ray Pengelly, and Jim Milligan, Cree Inc. G allium nitride (GaN) HEMT based
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BUH515D
Abstract: No abstract text available
Text: BUH515D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY FULLY INSULATED PACKAGE U.L. COMPLIANT FOR EASY MOUNTING NPN TRANSISTOR WITH INTEGRATED FREEWHEELING DIODE 3 APPLICATIONS:
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BUH515D
ISOWATT218
BUH515D
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BUH515D
Abstract: new 21 inch colour tv circuit diagram
Text: BUH515D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ SGS-THOMSON PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE U.L. FILE # E81734 (N NPN TRANSISTOR WITH INTEGRATED FREEWHEELING DIODE APPLICATIONS: ■
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BUH515D
ISOWATT218
E81734
ISOWATT218
BUH515D
new 21 inch colour tv circuit diagram
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EB213
Abstract: transistor 6274 selection criteria of bipolar transistor
Text: Freescale Semiconductor Engineering Bulletin EB213 Rev. 0, 5/2003 Surge - Ringing Wave Clamp for GaAs CATV Module Protection by: Jeff Gengler Freescale Semiconductor INTRODUCTION CLAMP DEVICE SELECTION CRITERIA CATV amplifiers are required to withstand surges induced
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EB213
EB213
transistor 6274
selection criteria of bipolar transistor
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TRANSISTOR 0835
Abstract: No abstract text available
Text: BUH515D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY FULLY INSULATED PACKAGE U.L. COMPLIANT FOR EASY MOUNTING NPN TRANSISTOR WITH INTEGRATED FREEWHEELING DIODE 3 APPLICATIONS:
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BUH515D
BUH515D
ISOWATT218
TRANSISTOR 0835
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BUH515D
Abstract: new 21 inch colour tv circuit diagram
Text: BUH515D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE U.L. FILE # E81734 (N NPN TRANSISTOR WITH INTEGRATED FREEWHEELING DIODE 3 APPLICATIONS:
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BUH515D
ISOWATT218
E81734
ISOWATT218
BUH515D
new 21 inch colour tv circuit diagram
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CSG3001-18A04
Abstract: thyristor BBC thyristor aeg BBC DSDI 35 WG15013B8C WG9017 abb sami star SM18CXC805 sm13cxc174 CSG2001-18A04
Text: REPLACEMENT TABLE FOR THE POWER SEMICONDUCTORS OF SAMI STAR FREQUENCY CONVERTERS The replacement table gives a list of those semiconductors, which can be used in SAMI STAR frequency converters. The types given for each semiconductor are interchangeable. Detail information about the mounting of the power
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400F415
460F460
500F500
630F415
730F460
800F500
570F575
630F660
870F575
1000F660
CSG3001-18A04
thyristor BBC
thyristor aeg
BBC DSDI 35
WG15013B8C
WG9017
abb sami star
SM18CXC805
sm13cxc174
CSG2001-18A04
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor, Inc.Order this document by MC12149/D MC12149 Low Power Voltage Controlled Oscillator Buffer LOW POWER VOLTAGE CONTROLLED OSCILLATOR BUFFER SEMICONDUCTOR TECHNICAL DATA NOTE: The MC12149 is NOT suitable as a crystal oscillator. •
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MC12149/D
MC12149
MC12149
MC12202
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BUH515D
Abstract: 2025 ct
Text: BUH515D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY FULLY INSULATED PACKAGE U.L. COMPLIANT FOR EASY MOUNTING NPN TRANSISTOR WITH INTEGRATED FREEWHEELING DIODE 3 APPLICATIONS:
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BUH515D
ISOWATT218
BUH515D
2025 ct
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IS621K30
Abstract: IS626040 ID2260A IEF260A2 powerex igbt ID126030 IS626030 ID121215
Text: POülEREX INC miN EREX 3=JE D • 7 2 ^ 5 1 GG04b34 S « P R X _ • IGBTMOD Selector Guide The Powerex IGBT modules are our newest product line. Powerex IGBTs are available in
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GG04b34
IS621K30
IS626040
ID2260A
IEF260A2
powerex igbt
ID126030
IS626030
ID121215
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ID121215
Abstract: cm100dy-28 IEF21KA2 ID121230 cm50dy-28 ID126030
Text: PO UE REX m INC / 3TE ]> m a t • TSTMbEl 0GD37S3 6 * P R X Powerex, Inc., HIIHs Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14
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0GD37S3
BP107,
ID121215
cm100dy-28
IEF21KA2
ID121230
cm50dy-28
ID126030
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