TRANSISTOR 1300 FREE Search Results

TRANSISTOR 1300 FREE Result Highlights (5)

Part	Manufacturer	Description
XPN1300ANC	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 30 A, 0.0133 Ω@10V, TSON Advance(WF)
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL

TRANSISTOR 1300 FREE Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
GRM55DR61H106KA88B Abstract: No abstract text available Text: Document Number: MHT1000H Rev. 0, 5/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET MHT1000HR5 RF power transistor suitable for industrial heating applications operating at 2450 MHz. Device is capable of both CW and pulse operation.	Original	PDF	MHT1000H MHT1000HR5 GRM55DR61H106KA88B
Product Selector Guide Abstract: NI-400S-2S Text: RF Military Power LDMOS Transistors Freescale’s LDMOS technology is ideally suited for military applications such as battlefield communications, primary radar covering HF, VHF, UHF, L-Band, S-Band, and avionics such as IFF transponders , and electronic warfare jamming. The high	Original	PDF	MMRF2004NBR1ï MMRF2006NT1ï 1230S--4L2L NI--780GS--4L NI--880XGS--2L NI--1230H--4S NI--1230S--4S4S OM--780--2L OM--780G--2L OM--780--4L Product Selector Guide NI-400S-2S
Untitled Abstract: No abstract text available Text: MOTOROLA Freescale Semiconductor, Inc. Available at: Available at http://www.motorola.com/rf, Go to Tools SEMICONDUCTOR TECHNICAL DATA RF Reference Design Library The RF Sub–Micron MOSFET Line RF Power Field-Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs	Original	PDF	MRF5S21150 MRF5S21150R3 MRF5S21150S MRF5S21150SR3 RDMRF5S21150UMTS
MOSFET 1300 F2 Abstract: 465B AN1955 CDR33BX104AKWS MRF19125 MRF19125R3 3052 mosfet Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF19125/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line RF Power Field Effect Transistor MRF19125R3 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFET	Original	PDF	MRF19125/D MRF19125R3 MOSFET 1300 F2 465B AN1955 CDR33BX104AKWS MRF19125 MRF19125R3 3052 mosfet
sot-23 MARKING 636 Abstract: No abstract text available Text: S852T / S852TW Vishay Semiconductors Silicon NPN Planar RF Transistor 1 Features • • • • • • • SOT-23 Low supply voltage Low current consumption e3 50 Ω input impedance at 945 MHz Low noise figure High power gain Lead Pb -free component Component in accordance to RoHS 2002/95/EC	Original	PDF	S852T S852TW 2002/95/EC 2002/96/EC OT-23 OT-323 OT-23 S852TW OT-323 sot-23 MARKING 636
MOSFET 1300 F2 Abstract: 100B100JCA500X 465B CDR33BX104AKWS MRF19125 MRF19125R3 Text: Freescale Semiconductor Technical Data Document Number: MRF19125 Rev. 8, 10/2008 RF Power Field Effect Transistor MRF19125R3 Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier	Original	PDF	MRF19125 MRF19125R3 MOSFET 1300 F2 100B100JCA500X 465B CDR33BX104AKWS MRF19125 MRF19125R3
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF19125 Rev. 7, 10/2008 RF Power Field Effect Transistor MRF19125SR3 Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier	Original	PDF	MRF19125 MRF19125SR3 MRF19125
Untitled Abstract: No abstract text available Text: Document Number: MRF19125 Rev. 8, 10/2008 Freescale Semiconductor Technical Data RF Power Field Effect Transistor MRF19125R3 Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier	Original	PDF	MRF19125 MRF19125R3
232273461009L Abstract: transistor mosfet J306 ATC100B2R0BT500X j327 transistor Transistor J182 232273461009 ATC100B470 ATC100B1R2BT500XT j349 AN1955 Text: Freescale Semiconductor Technical Data Document Number: MRF8S9202N Rev. 0, 12/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8S9202NR3 Designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base	Original	PDF	MRF8S9202N MRF8S9202NR3 232273461009L transistor mosfet J306 ATC100B2R0BT500X j327 transistor Transistor J182 232273461009 ATC100B470 ATC100B1R2BT500XT j349 AN1955
Untitled Abstract: No abstract text available Text: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Available at: http://www.motorola.com/rf/ Tools RF Reference Design Library MRF21125 Wideband CDMA The RF MOSFET Line RF Power Field Effect Transistors Freescale Semiconductor, Inc. N–Channel Enhancement–Mode Lateral MOSFETs	Original	PDF	MRF21125 MRF21125 RDMRF21125WCDMA
S852T Abstract: S852TW Text: S852T / S852TW Vishay Semiconductors Silicon NPN Planar RF Transistor 1 Features • • • • • • • SOT-23 Low supply voltage Low current consumption e3 50 Ω input impedance at 945 MHz Low noise figure High power gain Lead Pb -free component Component in accordance to RoHS 2002/95/EC	Original	PDF	S852T S852TW OT-23 2002/95/EC 2002/96/EC OT-323 S852T OT-23 OT-323 S852TW
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Available at http://www.freescale.com. Go to Support/ Reference Designs/Networking and Communications Rev. 3, 12/2005 N - Channel Enhancement - Mode Lateral MOSFETs Device Characteristics From Device Data Sheet Designed for W- CDMA base station applications with frequencies from 2110	Original	PDF	MRF21125R3 MRF21125SR3
2N4341 Abstract: 2N4340 2N4340 equivalent SMP4340 NJ16 SMP4341 transistor 2N4340 Text: Databook.fxp 1/13/99 2:09 PM Page B-12 B-12 01/99 2N4340, 2N4341 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Small Signal Amplifiers ¥ Current Regulators ¥ Voltage-Controlled Resistors At 25°C free air temperature:	Original	PDF	2N4340, 2N4341 2N4340 SMP4340, SMP4341 2N4341 2N4340 2N4340 equivalent SMP4340 NJ16 SMP4341 transistor 2N4340
ofdm predistortion Abstract: CGH21120 transistors cross reference cgh40120F Digital Transistors Cross Reference CGH25120F RF power transistors cross reference GaN on SiC HEMT Pulsed Power Transistor Peak digital Pre-distortion Gan hemt transistor Text: May 2009 Short range wireless UWB GPS and satellite GaN HEMT transistors Advances in high power GaN HEMT transistors By Simon Wood, Carl Platis, Don Farrell, Brad Millon, Bill Pribble, Peter Smith, Ray Pengelly, and Jim Milligan, Cree Inc. G allium nitride (GaN) HEMT based	Original	PDF

BUH515D Abstract: No abstract text available Text: BUH515D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY FULLY INSULATED PACKAGE U.L. COMPLIANT FOR EASY MOUNTING NPN TRANSISTOR WITH INTEGRATED FREEWHEELING DIODE 3 APPLICATIONS:	Original	PDF	BUH515D ISOWATT218 BUH515D
BUH515D Abstract: new 21 inch colour tv circuit diagram Text: BUH515D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ SGS-THOMSON PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE U.L. FILE # E81734 (N NPN TRANSISTOR WITH INTEGRATED FREEWHEELING DIODE APPLICATIONS: ■	Original	PDF	BUH515D ISOWATT218 E81734 ISOWATT218 BUH515D new 21 inch colour tv circuit diagram
EB213 Abstract: transistor 6274 selection criteria of bipolar transistor Text: Freescale Semiconductor Engineering Bulletin EB213 Rev. 0, 5/2003 Surge - Ringing Wave Clamp for GaAs CATV Module Protection by: Jeff Gengler Freescale Semiconductor INTRODUCTION CLAMP DEVICE SELECTION CRITERIA CATV amplifiers are required to withstand surges induced	Original	PDF	EB213 EB213 transistor 6274 selection criteria of bipolar transistor
TRANSISTOR 0835 Abstract: No abstract text available Text: BUH515D  HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY FULLY INSULATED PACKAGE U.L. COMPLIANT FOR EASY MOUNTING NPN TRANSISTOR WITH INTEGRATED FREEWHEELING DIODE 3 APPLICATIONS:	Original	PDF	BUH515D BUH515D ISOWATT218 TRANSISTOR 0835
BUH515D Abstract: new 21 inch colour tv circuit diagram Text: BUH515D  HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE U.L. FILE # E81734 (N NPN TRANSISTOR WITH INTEGRATED FREEWHEELING DIODE 3 APPLICATIONS:	Original	PDF	BUH515D ISOWATT218 E81734 ISOWATT218 BUH515D new 21 inch colour tv circuit diagram
CSG3001-18A04 Abstract: thyristor BBC thyristor aeg BBC DSDI 35 WG15013B8C WG9017 abb sami star SM18CXC805 sm13cxc174 CSG2001-18A04 Text: REPLACEMENT TABLE FOR THE POWER SEMICONDUCTORS OF SAMI STAR FREQUENCY CONVERTERS The replacement table gives a list of those semiconductors, which can be used in SAMI STAR frequency converters. The types given for each semiconductor are interchangeable. Detail information about the mounting of the power	Original	PDF	400F415 460F460 500F500 630F415 730F460 800F500 570F575 630F660 870F575 1000F660 CSG3001-18A04 thyristor BBC thyristor aeg BBC DSDI 35 WG15013B8C WG9017 abb sami star SM18CXC805 sm13cxc174 CSG2001-18A04
Untitled Abstract: No abstract text available Text: Freescale Semiconductor, Inc.Order this document by MC12149/D MC12149 Low Power Voltage Controlled Oscillator Buffer LOW POWER VOLTAGE CONTROLLED OSCILLATOR BUFFER SEMICONDUCTOR TECHNICAL DATA NOTE: The MC12149 is NOT suitable as a crystal oscillator. •	Original	PDF	MC12149/D MC12149 MC12149 MC12202
BUH515D Abstract: 2025 ct Text: BUH515D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY FULLY INSULATED PACKAGE U.L. COMPLIANT FOR EASY MOUNTING NPN TRANSISTOR WITH INTEGRATED FREEWHEELING DIODE 3 APPLICATIONS:	Original	PDF	BUH515D ISOWATT218 BUH515D 2025 ct
IS621K30 Abstract: IS626040 ID2260A IEF260A2 powerex igbt ID126030 IS626030 ID121215 Text: POülEREX INC miN EREX 3=JE D • 7 2 ^ 5 1 GG04b34 S « P R X _ • IGBTMOD Selector Guide The Powerex IGBT modules are our newest product line. Powerex IGBTs are available in	OCR Scan	PDF	GG04b34 IS621K30 IS626040 ID2260A IEF260A2 powerex igbt ID126030 IS626030 ID121215
ID121215 Abstract: cm100dy-28 IEF21KA2 ID121230 cm50dy-28 ID126030 Text: PO UE REX m INC / 3TE ]> m a t • TSTMbEl 0GD37S3 6 * P R X Powerex, Inc., HIIHs Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14	OCR Scan	PDF	0GD37S3 BP107, ID121215 cm100dy-28 IEF21KA2 ID121230 cm50dy-28 ID126030

TRANSISTOR 1300 FREE Search Results

TRANSISTOR 1300 FREE Result Highlights (5)

TRANSISTOR 1300 FREE Datasheets Context Search

GRM55DR61H106KA88B

Product Selector Guide

Untitled

MOSFET 1300 F2

sot-23 MARKING 636

MOSFET 1300 F2

Untitled

Untitled

232273461009L

Untitled

S852T

Untitled

2N4341

ofdm predistortion

BUH515D

BUH515D

EB213

TRANSISTOR 0835

BUH515D

CSG3001-18A04

Untitled

BUH515D

IS621K30

ID121215