Untitled
Abstract: No abstract text available
Text: SEMELAB PLC faPE D m 6133137 OGOOflTb 127 • S f l L B llll MOS POWER 4 IGBT 'Tin-j iFFi llll SEM E SML30G60AN LAB 600V 30A N -CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS Symbol All Ratings: T c = 25°C unless otherwise specified.
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SML30G60AN
SML30G600AN
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AC128
Abstract: transistor AC128 AC128 transistor germanium transistor ac 128 valvo transistoren ac128 pnp germanium transistor ac128 ac128 germanium valvo valvo transistor
Text: NICHT FÜR N E U E N T W I C K L U N G E N AC 128 GERMANIUM - PNP - NF - TRANSISTOR für Endstufen, als Transistorpaar für Gegentakt-B-Schaltungen, in Verbindung mit AC 127 als komplementäres Paar Mechani sehe Daten: Gehäuse: Metall, JEDEC T0-1, 1 A 3 DIN 41 871
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AC128
transistor AC128
AC128 transistor
germanium transistor ac 128
valvo transistoren
ac128 pnp
germanium transistor ac128
ac128 germanium
valvo
valvo transistor
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Untitled
Abstract: No abstract text available
Text: I Solid State Current Sensors f H • I Engineering Specifications LDA100 LDA110 LDA101 LDA111 s l LDA200 LDA201 LDA210 LDA211 Output Characteristics Collector Current mA Typical Capacitance (pF) (Ve.= 1 0 V ;f = 1MHz) Collector Dark Current (nA) (Ve. = SV; lF= 0mA)
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LDA100
LDA101
LDA110
LDA111
LDA200
LDA201
LDA210
LDA211
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transistor SMD p05
Abstract: 1981-R TRANSISTOR SMD 2X y 127 D TRANSISTOR 476 16q CP QUICK CONNECT L-398 LDA100 LDA101 LDA110
Text: I Solid State Current Sensors f H • I Engineering Specifications LDA100 LDA110 LDA101 LDA111 s l LDA200 LDA201 LDA210 LDA211 Output Characteristics Collector Current mA Typical Capacitance (pF) (Ve.= 1 0 V ;f = 1MHz) Collector Dark Current (nA) (Ve. = SV; lF= 0mA)
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LDA100
LDA101
LDA110
LDA111
LDA200
LDA201
LDA210
LDA211
transistor SMD p05
1981-R
TRANSISTOR SMD 2X y
127 D TRANSISTOR
476 16q
CP QUICK CONNECT
L-398
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SMD transistor UY
Abstract: smd transistor 406 1981-R TRANSISTOR SMD catalog transistor smd 127 transistor SMD p05 smd transistor 079 LDA100 transistor a102 LDA111
Text: I Solid State Current Sensors f H • I Engineering Specifications LDA100 LDA110 LDA101 LDA111 s l LDA200 LDA201 LDA210 LDA211 O utput C haracteristics C ollecto r C urrent mA Typical C apacitance (pF) (V e. = 1 0 V ;f = 1M Hz) C o llecto r D ark C urrent (nA)
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LDA100
LDA101
LDA110
LDA111
LDA200
LDA201
LDA210
LDA211
SMD transistor UY
smd transistor 406
1981-R
TRANSISTOR SMD catalog
transistor smd 127
transistor SMD p05
smd transistor 079
transistor a102
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MSOP8 Part marking National
Abstract: General Semiconductor diode marking 49 TRANSISTOR BI 187 transport media and packing 2N3904 LM95231 LM95231CIMM LM95231CIMMX MMBT3904 MO-187
Text: February 2005 LM95231 TruTherm Precision Dual Remote Diode Temperature Sensor with SMBus Interface General Description The LM95231 is a precision dual remote diode temperature sensor RDTS that uses National’s TruTherm technology. The 2-wire serial interface of the LM95231 is compatible with
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LM95231
LM95231
CSP-9-111C2)
CSP-9-111S2)
CSP-9-111S2.
MSOP8 Part marking National
General Semiconductor diode marking 49
TRANSISTOR BI 187
transport media and packing
2N3904
LM95231CIMM
LM95231CIMMX
MMBT3904
MO-187
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2N3904 geometry
Abstract: D1 diode
Text: August 2006 LM95241 Dual Remote Diode Temperature Sensor with SMBus Interface and TruTherm Technology 65nm/90nm General Description The LM95241 is a precision dual remote diode temperature sensor (RDTS) that uses National’s TruTherm technology. The 2-wire serial interface of the LM95241 is compatible with
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LM95241
65nm/90nm)
2N3904 geometry
D1 diode
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TC88411F
Abstract: TC88411
Text: INTEGRATED OSHIBA CIRCUIT TECHNICAL DATA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC58A040 F SILICON GATE CMOS 4 MBIT 4 M X 1 BITS CMOS AUDIO NAND E2PROM TENTATIVE DATA DESCRIPTION The TC58A040 is a 5-volt 4 Mbit NAND Electrically Erasable and Programmable Read Only Memory
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TC58A040
256-bit
TC58A040F--29_
TC58A040F
OP28-P-450
TC58A040F--30*
TC88411F
TC88411
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TC88411
Abstract: TC58A040F KC04 kc-04 TC58A040
Text: TOSHIBA TC58A040F TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4 MBIT 4 M X 1 BITS CMOS AUDIO NAND E2PROM DESCRIPTION The TC58A040 is a 5-volt 4 Mbit NAND Electrically E rasable and Programmable Read Only Memory (NAND EEPROM) organized as 256 bits X 128 pages X 128 blocks.
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TC58A040F
TC58A040
256-bit
TC88411
TC58A040F
KC04
kc-04
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new Jj8
Abstract: No abstract text available
Text: TO SH IB A TC58A040F TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4 MBIT 4 M X 1 BITS CMOS AUDIO NAND E^PROM DESCRIPTION The TC58A040 is a 5-volt 4 Mbit NAND Electrically Erasable and Programmable Read Only Memory (NAND EEPROM) organized as 256 bits X 128 pages X 128 blocks.
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TC58A040F
TC58A040
256-bit
TC58AO40
new Jj8
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Untitled
Abstract: No abstract text available
Text: INTEGRATED TOSHIBA CIRCUIT TECHNICAL DATA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC58A040 F SILICON GATE CMOS 4 MBIT 4 M X 1 BITS CMOS AUDIO NAND E2PROM TENTATIVE DATA DESCRIPTION The TC58A040 is a 5-volt 4 Mbit NAND Electrically Erasable and Programmable Read Only Memory
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TC58A040
256-bit
TC58A040F--29
OP28-P-450
TC58A040F--
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TC88411
Abstract: TC58A040F TC58A040 TC58A040F-7 NAND memory toshiba gate array
Text: INTEGRATED CIRCUIT TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC58A040 F TOSHIBA TECHNICAL DATA SILICON GATE CMOS 4 MBIT 4 M X 1 BITS CMOS AUDIO NAND E2PROM TENTATIVE DATA DESCRIPTION The TC58A040 is a 5-volt 4 Mbit NAND Electrically Erasable and Programmable Read Only Memory
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TC58A040
256-bit
TC58A040Fâ
OP28-P-450
TC88411
TC58A040F
TC58A040F-7
NAND memory
toshiba gate array
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Untitled
Abstract: No abstract text available
Text: INTEGRATED TOSHIBA CIRCUIT TECHNICAL DATA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC58A040 F SILICON GATE CMOS 4 MBIT 4 M X 1 BITS CMOS AUDIO NAND E2PROM TENTATIVE DATA DESCRIPTION The TC58A040 is a 5-volt 4 Mbit NAND Electrically Erasable and Programmable Read Only Memory
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TC58A040
256-bit
TC58A040Fâ
OP28-P-450
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Untitled
Abstract: No abstract text available
Text: TOSHIBA cIOtì 7 2 4 f l 0Q2R00S 370 TC58A040F PRELIMINARY 4Mbit 4M x 1 BIT CMOS AUDIO NAND EEPROM Description The TC58A040 is a single 5 volt 4M bit NAND Electrically Erasable and Programmable Read Only Memory (NAND EEPROM) organized as 256 bits x 128 pages x 128 blocks.
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0Q2R00S
TC58A040F
TC58A040
NV04010196
OP28-P-45Q
0QETD31
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Untitled
Abstract: No abstract text available
Text: TDI-CCD area image sensor S7199-01/-01F Image sensor with a long, narrow photosensitive area for X-ray imaging The S7199-01 is a front-illuminated FFT-CCD image sensor developed for X-ray imaging. An FOS Fiber Optic plate with Scintillator sensitive to X-rays is directly coupled to the CCD chips, allowing X-ray imaging with high sensitivity. Two CCD
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S7199-01/-01F
S7199-01
S7199-01F)
KMPD1077E12
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TDI ccd sensor
Abstract: ccd tdi binning
Text: TDI-CCD area image sensor S7199-01/-01F Image sensor with a long, narrow photosensitive area for X-ray imaging The S7199-01 is a front-illuminated FFT-CCD image sensor developed for X-ray imaging. An FOS Fiber Optic plate with Scintillator sensitive to X-rays is directly coupled to the CCD chips, allowing X-ray imaging with high sensitivity. Two CCD
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S7199-01/-01F
S7199-01
S7199-01F)
KMPD0177E12
TDI ccd sensor
ccd tdi binning
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Untitled
Abstract: No abstract text available
Text: TDI-CCD area image sensor S8658-01/01F Image sensor with a long, narrow photosensitive area for X-ray imaging The S8658-01 is an front-illuminated FFT-CCD image sensor developed for X-ray imaging. A FOS Fiber Optic plate with Scintillator sensitive to X-rays is directly coupled to the CCD chips, allowing X-ray imaging with high precision. Three CCD
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S8658-01/01F
S8658-01
S8658-01F)
KMPD1078E10
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Untitled
Abstract: No abstract text available
Text: PFC-Fundamentals 2. Active Power Factor Correction – Principle of Operation Temesi Ernö, Michael Frisch, Vincotech GmbH, Unterhaching/Germany For the development of applications with sinusoidal current consumption more design work will be required than ever before. New national and international standards and laws demand increased
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CD40938
Abstract: CD4093B
Text: CD4093B Typ s COS/MOS Quad 2-lnput NAND Schmitt Triggers High-Voltage Types 20 Volt Rating The RCA-CD4093B conSists of four Schmitt• trigger CirCUits. Each Circuit functions as a two· Input NAND gate with Schmltt·trlgger action on both inputs. The gate switches at
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CD4093B
RCA-CD4093B
CD40938
14-lead
CD4093BH
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SmD TRANSISTOR a42
Abstract: TRANSISTOR BC 136 TRANSISTOR BC 157 transistor BC 945 TRANSISTOR BC 187 SNA10A TRANSISTOR BC 413 MO-220-WGGD-2 pdf on BC 187 TRANSISTOR MO-220-WKKD-2
Text: Plastic Package Dimensional/Thermal Data The following table identifies all of the plastic package configurations and pin counts per package type offered by National Semiconductor. In addition, the table provides dimensional and thermal data for each of the plastic packages
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TCA160
Abstract: BY164 Mullard C296 TAA310A TAA435 TAA700 TBA550 TBA480 PCC88 TAA300
Text: MULLARD DATA BOOK 1973-74 ER R A TA A U G U S T 1973 j\ 1 d - ^ Mullard Limited Renewal Sales Department Mullard House Torrington Place London WC1E 7HD N / , S E M IC O M D U C Type No. Page No. AC187 13 Correction Delete minus signs to read: *IC = 300m A;
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AC187
BC157
BC158
BC159
BC186
BC187
BD201
BD202
BD203
BD204
TCA160
BY164
Mullard C296
TAA310A
TAA435
TAA700
TBA550
TBA480
PCC88
TAA300
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MC100E404
Abstract: MC100E404FN MC100E404FNR2 MC10E404 MC10E404FN MC10E404FNR2 ECL IC NAND
Text: MC10E404, MC100E404 5VĄECL Quad Differential AND/NAND The MC10E404/100E404 is a 4-bit differential AND/NAND device. The differential operation of the device makes it ideal for pulse shaping applications where duty cycle skew is critical. Special design techniques were incorporated to minimize the skew between the upper
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MC10E404,
MC100E404
MC10E404/100E404
r14525
MC10E404/D
MC100E404
MC100E404FN
MC100E404FNR2
MC10E404
MC10E404FN
MC10E404FNR2
ECL IC NAND
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laptop mother board voltage details
Abstract: 452 diode 3904 transistor 2n3904 transistor 2N3904 LM95241 LM95241CIMM LM95241CIMM-1 LM95241CIMM-2 LM95241CIMMX
Text: LM95241 Dual Remote Diode Temperature Sensor with SMBus Interface and TruTherm Technology 65nm/90nm General Description The LM95241 is a precision dual remote diode temperature sensor (RDTS) that uses National’s TruTherm technology. The 2-wire serial interface of the LM95241 is compatible with
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LM95241
65nm/90nm)
LM95241
laptop mother board voltage details
452 diode
3904 transistor
2n3904 transistor
2N3904
LM95241CIMM
LM95241CIMM-1
LM95241CIMM-2
LM95241CIMMX
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PDF
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laptop mother board voltage details
Abstract: 3904 TRANSISTOR AMD Sempron 140 2N3904 LM95241 LM95241CIMM LM95241CIMM-1 LM95241CIMM-2 LM95241CIMMX LM95241CIMMX-1
Text: LM95241 Dual Remote Diode Temperature Sensor with SMBus Interface and TruTherm Technology 65nm/90nm • Remote temperature readings without digital filtering: General Description The LM95241 is a precision dual remote diode temperature sensor (RDTS) that uses National's TruTherm technology.
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LM95241
65nm/90nm)
LM95241
laptop mother board voltage details
3904 TRANSISTOR
AMD Sempron 140
2N3904
LM95241CIMM
LM95241CIMM-1
LM95241CIMM-2
LM95241CIMMX
LM95241CIMMX-1
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