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    TRANSISTOR 1203 Search Results

    TRANSISTOR 1203 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 1203 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR General Description Features The APT13005 series are high voltage, high speed, high efficiency switching transistor, and it is specially designed for off-line switch mode power supplies with


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    APT13005 O-220-3, O220-3 O-220F-3 APT13005 O-220F-3 O-220-3 O-220-3 PDF

    transistor C368

    Abstract: c368 transistor bc368 transistor number code book FREE MLE327
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC368 NPN medium power transistor; 20 V, 1 A Product specification Supersedes data of 1999 Apr 26 2003 Dec 01 Philips Semiconductors Product specification NPN medium power transistor; 20 V, 1 A BC368


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    M3D186 BC368 BC368 SCA75 R75/04/pp9 transistor C368 c368 transistor transistor number code book FREE MLE327 PDF

    13003D

    Abstract: APT13003DI-G1
    Text: Data Sheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR General Description Features The APT13003D is a high voltage, high speed, high efficiency switching transistor, and it is specially designed for off-line switch mode power supplies with low output power.


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    APT13003D O-126 O-251 APT13003D O-126 O-251 13003D APT13003DI-G1 PDF

    APT27Z-G1

    Abstract: transistor 13000
    Text: Data Sheet HIGH VOLTAGE NPN TRANSISTOR APT27 General Description Features The APT27 series are high voltage, high speed switching NPN power transistor specially designed for offline switch mode power supplies with low output power. • · · High Switching Speed


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    APT27 APT27 APT27Z-G1 transistor 13000 PDF

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet HIGH VOLTAGE NPN TRANSISTOR APT27H General Description Features The APT27H series are high voltage, high speed switching NPN power transistor specially designed for off-line switch mode power supplies with low output power. • · · High Switching Speed


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    APT27H APT27H PDF

    GU13005S

    Abstract: EU13005S Gu1300 transistor 2808 APT13005STF-G1 NPN Transistor 2.0A 700V to-126
    Text: Data Sheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR General Description Features The APT13005S is a high voltage, high speed, high efficiency switching transistor, and it is specially designed for off-line switch mode power supplies with low output power.


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    APT13005S O-220F-3, O-126 O-251 APT13005S O-126 O-220F-3 O-251 GU13005S EU13005S Gu1300 transistor 2808 APT13005STF-G1 NPN Transistor 2.0A 700V to-126 PDF

    TRANSISTOR 13000

    Abstract: 2808 transistor APT13003 13003l 13000 npn transistor NPN Transistor TO92 5V 200mA transistor g1 transistor 2808 transistor 1203
    Text: Data Sheet HIGH VOLTAGE NPN TRANSISTOR APT13003L General Description Features The APT13003L series are high voltage, high speed switching NPN power transistor specially designed for off-line switch mode power supplies with low output power. • · · High Switching Speed


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    APT13003L APT13003L TRANSISTOR 13000 2808 transistor APT13003 13003l 13000 npn transistor NPN Transistor TO92 5V 200mA transistor g1 transistor 2808 transistor 1203 PDF

    transistor 2203

    Abstract: APT13005
    Text: Data Sheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR General Description Features The APT13005 series are high voltage, high speed, high efficiency switching transistor, and it is specially designed for off-line switch mode power supplies with low output power.


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    APT13005 APT13005 O-220-3, O220-3 O-220F-3 O-220F-3 O-220-3 O-220-3 transistor 2203 PDF

    b3p3

    Abstract: cec PNP transistor SOT89 transistor marking 84 SOT89 marking cec 12039 PNP TRANSISTOR SOT89 sot89 footprint BC869-16 SOT89 PHILIPS BC868-16 BC868-25
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 BC869 PNP medium power transistor; 20 V, 1 A Product specification Supersedes data of 1999 Apr 08 2003 Dec 02 Philips Semiconductors Product specification PNP medium power transistor; 20 V, 1 A BC869


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    M3D109 BC869 BC869-1e-mail SCA75 R75/05/pp11 b3p3 cec PNP transistor SOT89 transistor marking 84 SOT89 marking cec 12039 PNP TRANSISTOR SOT89 sot89 footprint BC869-16 SOT89 PHILIPS BC868-16 BC868-25 PDF

    B3P68

    Abstract: BC868 BC868-25 BC869 BC869-25 BCP68
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 BC868 NPN medium power transistor; 20 V, 1 A Product specification Data supersedes data of 1999 Apr 08 2003 Dec 02 Philips Semiconductors Product specification NPN medium power transistor; 20 V, 1 A


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    M3D109 BC868 BC869 SCA75 R75/06/pp10 B3P68 BC868 BC868-25 BC869 BC869-25 BCP68 PDF

    transistor 2808

    Abstract: APT27Z
    Text: Data Sheet HIGH VOLTAGE NPN TRANSISTOR APT27 General Description Features The APT27 series are high voltage, high speed switching NPN power transistor specially designed for offline switch mode power supplies with low output power. • · · High Switching Speed


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    APT27 APT27 transistor 2808 APT27Z PDF

    C36916

    Abstract: transistor C369 c3691 C36925 BC369 C3692 C369 transistor MLE295
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC369 PNP medium power transistor; 20 V, 1 A Product specification Supersedes data of 1999 Apr 26 2003 Nov 20 Philips Semiconductors Product specification PNP medium power transistor; 20 V, 1 A BC369


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    M3D186 BC369 BC369-16 BC369-25 SC-43 C36916 C36925 transistor C369 c3691 C3692 C369 transistor MLE295 PDF

    BLP7G07S-140P

    Abstract: transistor B 764
    Text: BLP7G07S-140P Power LDMOS transistor Rev. 1 — 21 June 2012 Objective data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance Test signal


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    BLP7G07S-140P BLP7G07S-140P transistor B 764 PDF

    transistor G1 SOT-23

    Abstract: 1203 TO-92 625 SOT-23 8F sot23 NPN Transistor TO92
    Text: Data Sheet HIGH VOLTAGE NPN TRANSISTOR APT17 General Description Features The APT17 is high voltage, small signal NPN transistor. • Applications The APT17 is available in SOT-23 and TO-92 packages. SOT-23 High Collector-Emitter Voltage: 480V High Voltage and Low Standby Power Circuit for


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    APT17 APT17 OT-23 OT-23 OT-23) transistor G1 SOT-23 1203 TO-92 625 SOT-23 8F sot23 NPN Transistor TO92 PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effeet power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology


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    BUK9624-55 OT404 PDF

    BFY90 PHILIPS

    Abstract: BFY90
    Text: Philips Semiconductors Product specification bbSBIBl D0321S5 b^2 BIAPX NPN 1 GHz wideband transistor BFY90 N AMER PHILIPS/DISCRETE DESCRIPTION b^E J> PINNING NPN transistor in a TO-72 metal envelope, with insulated electrodes and a shield lead connected to the


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    D0321S5 BFY90 bb53T31 MBA397 MEA363 BFY90 PHILIPS BFY90 PDF

    BFY90 PHILIPS

    Abstract: BFY90 ic 1014b PHILIPS WIDE BAND AMPLIFIERS 3I15 enamelled copper wire
    Text: P hilips Sem iconductors Product specification NPN 1 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION SbE BFY90 T> 713.0a2b Dü4ti04S D24 • P H IN PINNING NPN transistor in a TO-72 metal envelope, with insulated electrodes and a shield lead connected to the


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    BFY90 711002b 004bD4^ MBA383 BFY90 PHILIPS BFY90 ic 1014b PHILIPS WIDE BAND AMPLIFIERS 3I15 enamelled copper wire PDF

    LG color tv Circuit Diagram schematics

    Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007 PDF

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    PDF

    1N6227

    Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    PDF

    vk200 philips

    Abstract: BFY90 PHILIPS BFY90 VK200 Philips BFy90
    Text: Philips Semiconductors b b s a ia i D0321S5 b^E M AP V Product specification NPN 1 GHz wideband transistor BFY90 N DESCRIPTION AMER P H IL IP S /D IS C R E T E bTE PINNING NPN transistor in a TO-72 metal envelope, with insulated electrodes and a shield lead connected to the


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    D0321S5 BFY90 andS15q UEA397 vk200 philips BFY90 PHILIPS BFY90 VK200 Philips BFy90 PDF

    Untitled

    Abstract: No abstract text available
    Text: BUX14 HARRIS SEMICOND SECTOR 1203 43GEE71 DOHOTET 3RE * H A S File Number SbE » 7 Silicon N-P-N Switching Transistor TERMINAL DESIGNATIONS C E For High-Voltage Switching and Amplifier Applications in Industrial and Commercial Equipment FLAN G E Features:


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    BUX14 43GEE71 O-204AA RCA-BUX14 0D4D731 PDF

    BUX14

    Abstract: BR 4008 transistor BUX14
    Text: Z E SOLID STATE OÏ 387508 f'G E SOLID STATE . . — . ' DlT| 3fl7S0fll 0017bGD L, | ~ 01E 17600 • File Num ber '1203 Silicon N-P-N r* . . . .i • . Switching Transistor D Pro Electron Power Transistors BUX14 TERMINAL DESIGNATIONS For High-Voltage Switching and


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    BUX14 O-204AA RCA-BUX14 r-33i3 92CS-304S5 IICS-14HI BUX14 BR 4008 transistor BUX14 PDF

    Z9982

    Abstract: bux14
    Text: BUX14 File N um ber Silicon N-P-N Switching Transistor 1203 TERM INAL DESIGNATIONS c FLANGE For High-Voltage Switching and Amplifier Applications in Industrial and Commercial Equipment Features: • Vceo - 400V m l cc — 10 A m P T - 150 W POWER TRANSISTORS


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    BUX14 O-204AA RCA-BUX14 -BUX14 92CS- 92CS-J9985M 2CS-29992 Z9982 bux14 PDF