MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
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Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UDT1605 Preliminary NPN EPITAXIAL SILICON TRANSISTOR 120V NPN SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR DESCRIPTION The UTC UDT1605 is an NPN Darlington transistor. Utilizing UTC’s advanced techonology, UDT1605 features ultra-high DC
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UDT1605
UDT1605
UDT1605G-AB3-R
OT-89
QW-R208-048
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2SD2696
Abstract: No abstract text available
Text: 2SD2696 Transistors Low frequency transistor for amplification 2SD2696 zStructure NPN Silicon Epitaxial Planar Transistor zExternal dimensions (Unit : mm) 1.2 0.32 zFeatures 1) The transistor of 400mA class which went only with 2012 size conventionally is attained in 1208 size.
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2SD2696
400mA
300mA
100mA
2SD2696
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vmt3
Abstract: No abstract text available
Text: Low frequency transistor for amplification 2SD2696 zStructure NPN Silicon Epitaxial Planar Transistor zDimensions (Unit : mm) zFeatures 1) The transistor of 400mA class which went only with 2012 size conventionally is attained in 1208 size. 2) Collector saturation voltage is low.
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2SD2696
400mA
300mA
100mA
2SD2696
R0039A
vmt3
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Untitled
Abstract: No abstract text available
Text: Low frequency transistor for amplification 2SD2696 Structure NPN Silicon Epitaxial Planar Transistor Dimensions (Unit : mm) Features 1) The transistor of 400mA class which went only with 2012 size conventionally is attained in 1208 size. 2) Collector saturation voltage is low.
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2SD2696
400mA
300mA
100mA
R0039A
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2SA2160
Abstract: 2SA2149 2SC6005 RQW200 rdx100n45 RQA200N03 rqw200n03 RLA130N03 rdx*100n45 2sc6027
Text: 2005 Transistor New Products Ver.1 MOS FET Series Low VCE sat Miniature Digital Transistor Series Low VCE(sat) Transistor Series Endured Discharge Voltage/ High Speed Switching/ Low Noise Transistor Series Muting Transistor Series MOS FET TUMT/TSMT Series
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O-220FM
47P4869E
2SA2160
2SA2149
2SC6005
RQW200
rdx100n45
RQA200N03
rqw200n03
RLA130N03
rdx*100n45
2sc6027
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2SD2696
Abstract: No abstract text available
Text: Low frequency transistor for amplification 2SD2696 zDimensions (Unit : mm) zStructure NPN Silicon Epitaxial Planar Transistor zFeatures 1) The transistor of 400mA class which went only with 2012 size conventionally is attained in 1208 size. 2) Collector saturation voltage is low.
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2SD2696
400mA
300mA
100mA
R0039A
2SD2696
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BUT11APX
Abstract: BUT11APX-1200 BUT11
Text: DISCRETE SEMICONDUCTORS DATA SHEET BUT11APX-1200 Silicon Diffused Power Transistor Product specification April 1999 1;3 Semiconductors Product specification Silicon Diffused Power Transistor BUT11APX-1200 GENERAL DESCRIPTION Enhanced performance new generation,high voltage, high-speed switching npn transistor in a plastic full-pack
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BUT11APX-1200
BUT11APX-1200
771-BUT11APX-1200127
BUT11APX
BUT11
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BUT11APX-1200 Silicon Diffused Power Transistor Product specification April 1999 1;3 Semiconductors Product specification Silicon Diffused Power Transistor BUT11APX-1200 GENERAL DESCRIPTION Enhanced performance new generation,high voltage, high-speed switching npn transistor in a plastic full-pack
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BUT11APX-1200
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2SC5800
Abstract: NESG2046M33 NEC JAPAN IC
Text: PRELIMINARY DATA SHEET NPN SILICON + SiGe RF TWIN TRANSISTOR µPA869TD NPN SILICON + SiGe RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PACKAGE) FEATURES • 2 different built-in transistors (NESG2046M33, 2SC5800) Q1: High gain SiGe transistor
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PA869TD
NESG2046M33,
2SC5800)
S21e2
NESG2046M33
2SC5800
2SC5800
NESG2046M33
NEC JAPAN IC
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BUT11APX-1200 Silicon Diffused Power Transistor Product specification April 1999 1;3 Semiconductors Product specification Silicon Diffused Power Transistor BUT11APX-1200 GENERAL DESCRIPTION Enhanced performance new generation,high voltage, high-speed switching npn transistor in a plastic full-pack
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BUT11APX-1200
BUT11APX-1200
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DUAL TRANSISTOR
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UMZ1N Preliminary DUAL TRANSISTOR GENERAL PURPOSE TRANSISTOR DESCRIPTION The UTC UMZ1N is a dual transistor, including an NPN transistor and a PNP transistor. It uses UTC’s advanced technology to provide customers with high DC current gain, etc.
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OT-363
QW-R218-024
DUAL TRANSISTOR
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L-Band 1200-1400 MHz
Abstract: diode gp 429 Radar x band radar HV400
Text: DESCRIPTION DESCRIPTION HVV1214-075 HVV1214-075 L-Band Radar Pulsed Power Transistor L-Band Radar Pulsed Power Transistor HVV1214-075 1200-1400 MHz, 200µs Pulse, 10% DutyDuty 1200-1400 MHz, 200µs Pulse, 10% The innovative Semiconductor Company! L-Band Radar Pulsed Power Transistor
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HVV1214-075
HVV1214-075MHz,
HVV1214-075
429-HVVi
EG-01-PO08X4
L-Band 1200-1400 MHz
diode gp 429
Radar
x band radar
HV400
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TV power transistor datasheet
Abstract: power transistor 2SD2599 equivalent 2SC5411 transistor 2sd2499 transistor 2Sc5858 equivalent 2SC5570 components in horizontal output 2SC5855
Text: Part Number Product Category Application Scope 2SC5280 Horizontal Deflection Output Power Transistor Color 2SC5339 Horizontal Deflection Output Power Transistor Color 2SC5386 Horizontal Deflection Output Power Transistor Color 2SC5387 Horizontal Deflection Output Power Transistor
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2SC5280
2SC5339
2SC5386
2SC5387
2SC5404
2SC5411
2SC5421
2SC5422
2SC5445
2SC5446
TV power transistor datasheet
power transistor
2SD2599 equivalent
transistor 2sd2499
transistor
2Sc5858 equivalent
2SC5570
components in horizontal output
2SC5855
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transistor number code book FREE
Abstract: PNP TRANSISTOR SOT363 PUMF12 10311 marking A1 TRANSISTOR
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 PUMF12 PNP general purpose transistor; NPN resistor-equipped transistor Product specification 2002 Nov 07 Philips Semiconductors Product specification PNP general purpose transistor; NPN resistor-equipped transistor
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MBD128
PUMF12
OT363
OT323
SC-70)
SCA74
613514/01/pp8
transistor number code book FREE
PNP TRANSISTOR SOT363
PUMF12
10311
marking A1 TRANSISTOR
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PUMF12
Abstract: MCE153
Text: DISCRETE SEMICONDUCTORS DAT dbook, halfpage MBD128 PUMF12 PNP general purpose transistor; NPN resistor-equipped transistor Product data sheet 2002 Nov 07 NXP Semiconductors Product data sheet PNP general purpose transistor; NPN resistor-equipped transistor
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MBD128
PUMF12
OT363
OT323
SC-70)
613514/01/pp7
PUMF12
MCE153
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PUMF11
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT dbook, halfpage MBD128 PUMF11 NPN resistor-equipped transistor; PNP general purpose transistor Product data sheet 2002 Apr 09 NXP Semiconductors Product data sheet NPN resistor-equipped transistor; PNP general purpose transistor
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MBD128
PUMF11
OT363
OT323
SC-70)
613514/01/pp7
PUMF11
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA DTA143EE Preliminary Data Sheet Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 2 The BRT Bias Resistor Transistor contains a single transistor with a monolithic
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DTA143EE
416/SC
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6aa marking
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA DTA114YE Preliminary Data Sheet Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 2 The BRT Bias Resistor Transistor contains a single transistor with a monolithic
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DTA114YE
416/SC
6aa marking
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PUMF12
Abstract: 10311 PNP TRANSISTOR SOT363
Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage MBD128 PUMF12 PNP general purpose transistor; NPN resistor-equipped transistor Product data sheet 2002 Nov 07 NXP Semiconductors Product data sheet PNP general purpose transistor; NPN resistor-equipped transistor
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MBD128
PUMF12
OT363
OT323
SC-70)
613514/01/pp7
PUMF12
10311
PNP TRANSISTOR SOT363
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PNP TRANSISTOR SOT363
Abstract: PUMF11
Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage MBD128 PUMF11 NPN resistor-equipped transistor; PNP general purpose transistor Product data sheet 2002 Apr 09 NXP Semiconductors Product data sheet NPN resistor-equipped transistor; PNP general purpose transistor
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MBD128
PUMF11
OT363
OT323
SC-70)
613514/01/pp7
PNP TRANSISTOR SOT363
PUMF11
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EE-125
Abstract: photo transistor high current photo transistor KDT5001A PHOTO TRANSISTOR current to voltage photo-transistor PK640 "photo transistor"
Text: Silicon photo transistor KDT5001A The KDT5001A is high sensitivity silicon photo [Unit : mm] Dimensions transistor which converts light to electrical signal. This photo transistor is both COB package and easy to mount. Features Higly sensitive photo transistor
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KDT5001A
KDT5001A
EE-125
photo transistor high current
photo transistor
PHOTO TRANSISTOR current to voltage
photo-transistor
PK640
"photo transistor"
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Untitled
Abstract: No abstract text available
Text: Silicon photo transistor KDT5001A Dimensions The KDT5001A is high sensitivity silicon photo [Unit : mm] transistor which converts light to electrical signal. This photo transistor is both COB package and easy to mount. Features Higly sensitive photo transistor
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KDT5001A
KDT5001A
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MCT8 opto
Abstract: c1252 MCL601 MCT8 opto switch C1246 4N25 4N26 4N27 4N28 4N35
Text: 112 O p to iso lato rs A * * W A , ~ PACKAGE PRODUCT KEY OUTPUT FORM AT TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR MCT2 MCT2E MCT210 MCT26 MCT4 MCT4R* MCT6 A A A A C C B TRANSISTOR MCT66 B TRANSISTOR TRANSISTOR TRANSISTOR
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MCT210
MCT26
MCT66
C1255
10TT1.
MCT8 opto
c1252
MCL601
MCT8 opto switch
C1246
4N25
4N26
4N27
4N28
4N35
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