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    TRANSISTOR 11N60C2 Search Results

    TRANSISTOR 11N60C2 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 11N60C2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    11n60c2 equivalent

    Abstract: 11N60C 11N60C2 LMOS SPW11N60C2 SDP06S60
    Text: SPW11N60C2 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 600 V •=Periodic avalanche rated RDS on 0.38 Ω • Extreme dv/dt rated


    Original     		PDF SPW11N60C2 P-TO247 Q67040-S4313 11N60C2 11n60c2 equivalent 11N60C 11N60C2 LMOS SPW11N60C2 SDP06S60

    68w Transistor smd

    Abstract: 11n60c2 transistor smd 68W marking code 68W 68w smd smd 68W transistor 68W SPP11N60C2 transistor 68W smd 11n60c2 equivalent
    Text: SPP11N60C2 SPB11N60C2 Preliminary data Cool MOS Power Transistor COOLMOS Power Semiconductors Feature Product Summary • New revolutionary high voltage technology · Ultra low gate charge VDS 600 V · Periodic avalanche rated RDS on 0.38 W · Extreme dv/dt rated


    Original     		PDF SPP11N60C2 SPB11N60C2 P-TO263-3-2 P-TO220-3-1 Q67040-S4295 11N60C2 Q67040-S4298 68w Transistor smd 11n60c2 transistor smd 68W marking code 68W 68w smd smd 68W transistor 68W SPP11N60C2 transistor 68W smd 11n60c2 equivalent

    SPA11N60C2

    Abstract: AN-TO220-3-31-01 11N60C2 11N60C GPT09301 SDP06S60
    Text: Preliminary data SPA11N60C2 Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 600 V •=Periodic avalanche rated R DS on 0.38 Ω • Extreme dv/dt rated


    Original     		PDF SPA11N60C2 P-TO220-3-31 P-TO220-3-31 Q67040-S4332 11N60C2 SPA11N60C2 AN-TO220-3-31-01 11N60C2 11N60C GPT09301 SDP06S60

    11n60c2

    Abstract: transistor 11n60c2 spa 11n60c2
    Text: Final data SPP11N60C2, SPB11N60C2 SPA11N60C2 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge RDS on 0.38 Ω 11 A • Periodic avalanche rated ID • Extreme dv/dt rated


    Original     		PDF SPP11N60C2, SPB11N60C2 SPA11N60C2 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 SPP11N60C2 11n60c2 transistor 11n60c2 spa 11n60c2

    11n60c2

    Abstract: 11n60c2 equivalent transistor 11n60c2 11n60c2* equivalents 11N60C spa 11n60c2 2002-08-12 11N6 SPB11N60C2 SPP11N60C2
    Text: Final data SPP11N60C2, SPB11N60C2 SPA11N60C2 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge R DS on 0.38 Ω • Periodic avalanche rated ID 11 A • Extreme dv/dt rated


    Original     		PDF SPP11N60C2, SPB11N60C2 SPA11N60C2 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 SPP11N60C2 Q67040-S4295 11n60c2 11n60c2 equivalent transistor 11n60c2 11n60c2* equivalents 11N60C spa 11n60c2 2002-08-12 11N6 SPB11N60C2 SPP11N60C2

    11n60c2

    Abstract: SPW11N60C2 SDP06S60
    Text: SPW11N60C2 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 600 V • Periodic avalanche rated RDS on 0.38 Ω • Extreme dv/dt rated ID 11 A • Ultra low effective capacitances


    Original     		PDF SPW11N60C2 P-TO247 Q67040-S4313 11N60C2 11n60c2 SPW11N60C2 SDP06S60

    11N60C

    Abstract: 11n60
    Text: SPW11N60C2 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 600 V • Periodic avalanche rated RDS on 0.38 Ω • Extreme dv/dt rated ID 11 A • Ultra low effective capacitances


    Original     		PDF SPW11N60C2 P-TO247 Q67040-S4313 11N60C2 11N60C 11n60

    STR 6750

    Abstract: 11N60 transistor SMD R1D TRANSISTOR SMD QP DK QP ic 3525 pwm application dc to dc converter 6 PIN SMD IC FOR SMPS SMD 3825 LED 4450 SMD SO-8 SMD MOSFET DRIVE 4450 8 PIN 200w power amplifier PCB layout
    Text: Version 1.1 , July 2000 Application Note AN-CoolMOS-06 200W SMPS Demonstration Board Author: Marko Scherf, Ilia Zverev Published by Infineon Technologies AG http://www.infineon.com Power Conversion N e v e r s t o p t h i n k i n g 200W SMPS Demonstration Board


    Original     		PDF AN-CoolMOS-06 TDA16888, Room14J1 Room1101 STR 6750 11N60 transistor SMD R1D TRANSISTOR SMD QP DK QP ic 3525 pwm application dc to dc converter 6 PIN SMD IC FOR SMPS SMD 3825 LED 4450 SMD SO-8 SMD MOSFET DRIVE 4450 8 PIN 200w power amplifier PCB layout

    SMD MOSFET DRIVE 4450 8 PIN

    Abstract: A7 SMD TRANSISTOR transistor SMD R1D 6 PIN SMD IC FOR SMPS str 6750 smps power supply circuit 11N60 transistor SMD DK SMD a7 Transistor smd transistor A7 s 52 transistor SMD DK rc
    Text: Version 1.2 , November 2001 Application Note AN-CoolMOS-06 200W SMPS Demonstration Board Author: Marko Scherf, Ilia Zverev Published by Infineon Technologies AG http://www.infineon.com Power Conversion        200W SMPS Demonstration Board


    Original     		PDF AN-CoolMOS-06 TDA16888, Room14J1 Room1101 SMD MOSFET DRIVE 4450 8 PIN A7 SMD TRANSISTOR transistor SMD R1D 6 PIN SMD IC FOR SMPS str 6750 smps power supply circuit 11N60 transistor SMD DK SMD a7 Transistor smd transistor A7 s 52 transistor SMD DK rc